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Worksheet 3

The document is a worksheet for the Applied Electronics-I course at Addis Ababa University, focusing on transistors and their characteristics. It includes short answer questions and problems related to transistor operation, biasing, and calculations involving current and voltage. The worksheet aims to assess students' understanding of key concepts in electronics.
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0% found this document useful (0 votes)
25 views2 pages

Worksheet 3

The document is a worksheet for the Applied Electronics-I course at Addis Ababa University, focusing on transistors and their characteristics. It includes short answer questions and problems related to transistor operation, biasing, and calculations involving current and voltage. The worksheet aims to assess students' understanding of key concepts in electronics.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Addis Ababa University

Addis Ababa Institute of Technology


School of Electrical and Computer Engineering

Applied Electronics-I: ECEG-2131


Worksheet-3
1. Short answer questions

(a) What is a transistor? What are the types?


(b) Why is the transistor called a current controlled device?
(c) Explain about the characteristics of a transistor?
(d) Which of the transistor currents is always the largest? Which is always the smallest? Which
two currents are relatively close in magnitude?
(e) Why is the width of the base region of a transistor kept very small compared to other regions?
(f) Explain why emitter is always forward biased and collector is always reverse-biased with respect
to base?
(g) Can a transistor be obtained by connecting tow semiconductor diodes back-to-back?
(h) How are α and β related to each other?
(i) Why is there a maximum limit of collector supply voltage for a transistor?
(j) What is meant by biasingName:__________________________________________
a transistor?
(k) What are the various methods used for transistor biasing? Which one is popular? +20 V
Problem 2 - (15 points)
(l) What is meant by operating point?
RC 10k Ω
(m) List the sources of instability of collector
The transistor current?
used in this circuit has the characteristics shown IC
(n) Explain how BJT can beonused
the graph below.
as an amplifier and a switch. IB +
VCE
Α) Calculate the load line, draw it on the graph and locate -
2. The leakage currents of a transistor areforICBO = (6
5µA V
the Q-point IB=6uA ×10−6and
A) ICEO = 0.4mA. For IBB = 30µA, determine
the value of IC .
3. For a BJT, IC = 2mA, IB = 50µA, and ICBO = 0.5µA.

(a) Find β and IE .


(b) What is the percentage error in the calculation of β if the leakage current is assumed zero?

4. The transistor used in this circuit has the characteristics shown.


(a) Calculate the load line, draw it on the graph and locate the Q-point for IB = 6µA
____ (b) Estimate the β value of the transistor.

+20 V IC
(mA)
IB=10uA
2
RC 10k Ω
1.5 IB=8uA
s shown IC
IB=6uA
IB + 1
VCE
d locate - IB=4uA
VB
0.5

5 10 15 20 25 VCE (Volts)

Β) Estimate the value of the transistor β.


Prepared by: SECE Applied Electronics-I AAU/AAiT/, 2024/25 AY (1)
me:__________________________________________

5. The Zener diode used in thisProblem 4. a


circuit has 6. For the following circuit, determine the
V
Zener diode used = 6.7V and it is used for biasing the value of resistor R so that Vout = 2V .
z in this circuit has a Vz = 6.7 Volts and it is used for biasing the
For the following circuit,
npn
transistor which hastransistor
β=100. which has β = 100.
Electronics I
VCC
Vcc=+20 V VCC 5V

IC
10kΩ
Example 6.3
RC 10k Ω Q3
R1 100k Ω
For the given circuit (RB=10kΩ,
IB +
VCE
β is specified to be 50, it is r
- R transistor operating
IE
Vou t
6.7 V RE 10k Ω
a)10kΩin the active mode with
b) at the edge of saturatio
Electronics
c) deep in Isaturation (VCEs
Determine the value of resistor R so that Vout = 2V
ermine the Q-point ( I CQ and VCEQ ) of the transistor
7. For the given circuit (RB = 10kΩ, RC = 1kΩ, V = 10V )
assuming VBE remains constant at 0.7V and transistor β is
Example 6.1
VBB
VCC

specified to be 50, it is required to determine the value of the


RC
voltage VBB that results in the transistor operating
An npn transistor having Is = 10
(a) in the active mode with VCE = 5V theRBbase is fed with a consta
(b) at the edge of saturation (VCEsat = 0.3V )
connected to a 5-V dc supply v
active mode, find VBE and VCE.
(c) deep in saturation (VCEsat = 0.2V ) with βforced = 10.
source with a resistance conne
to result in the same operating
92 CHARACTERISTICS OF BIPOLAR JUNCTION TRANSI

CC V
8. An npn transistor having β 6.071/22.071 Spring as
= 100 is connected 2006, HW7the
follows:
(b) With C shorted, the application of (3.2), KCL, and KVL results in
emitter is grounded, the base is fed with a constant-current
V
source supplying a dc current of 10µA, and the collector isIBQ ¼ ICQ ¼ ICC S þ IRB ¼
VS # VBEQ VCC # VBEQ

! RS C RB
connected to a 5V dc supply via a resistance RC of 3kΩ.
VCC # VBEQ 12 # 0:3
Assuming that the transistor is operating in thesoactive
that mode,RB ¼ II ¼ ¼2
DC# VS # VBEQ 2:95 $ 10 # 2 # 0:3
#3
CQ
find VBE and VCE . Use these values to verify active-mode ! RS 50 100 $ 103
operation. Replace the current source with a resistance
connected from the base to the 5V dc supply. What resistance
value is needed to result in the same operating
3.20 Theconditions?
Si Darlington transistor pair of Fig. 3-21 has negligible leakage
Let VCC ¼ 12 V; RE ¼ 1 k!, and R2 ! 1. (a) Find the value of R1 n
071/6.071 Spring 2006 Quiz#3 Page:¼8 6 V. (b) with R as found in part a, find V
that VCEQ2 1 CEQ1 .

+ VCC
9. The Si Darlington transistor pair shown has negligible leakage
R1
current, and β1 = β2 = 50. Let VCC = 12V ; RE = 1kΩ, and
IR1
R2 → ∞.
a T1

(a) Find the value of R1 needed to bias the circuit so that


T2
VCEQ2 = 6V . R2 iB2

(b) with R1 as found in (a), find VCEQ1 . RE


IR2

Fig. 3-21

(a) Since R2 ! 1; IR2 ¼ 0 and IBQ1 ¼ IR1 . By KVL,


Prepared by: SECE Applied Electronics-I AAU/AAiT/, 2024/25 AY (2)

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