Physics Passing Package Notes 2025
Physics Passing Package Notes 2025
# 307/ 2.B, 1st Floor, 2nd main , PJ Extn, Near District Stadium, Davanagere – 577002.
1 (𝑟+𝑎)2 − (𝑟−𝑎 )2
EA = 4πℰ 𝑞
0 (𝑟−𝑎)2 (𝑟+𝑎)2
1 𝑞 x 4ra 1 𝑞 𝑥 2𝑎 𝑥 2𝑟
EA = x = x (But, q x 2a = P )
4πℰ0 (𝑟 2 −𝑎2 )2 4πℰ0 (𝑟 2 −𝑎2 )2
1 2pr
EA = 4πℰ x (𝑟 2 −𝑎2 )2 along the axis from –ve charge towards +ve charge.
0
→ 𝟏 𝟐𝐩
𝑬𝑨 = 𝟒𝛑𝓔𝟎
x 𝒓𝟑
Direction:
→
⃗⃗ ).
Electric field on the axis (𝑬 ) of a dipole is along the direction of dipole moment (𝑷
𝑨
4. Obtain an expression for Electric field at a point on the bisector line of dipole
In Δ OPA
PA2 = OP2 + OA2= r2 + a2
PA = (r2 + a2) ½
𝑂𝐴 𝑎
Cos θ = =
𝑃𝐴 (𝑟 2 +𝑎2 )1/2
1 𝑞
Field at P due to +ve charge, E1 = x along AP
4πℰ0 (𝑟 2 +𝑎2 )
1 𝑞
Field at P due to -ve charge, E2 = x along PB
4πℰ0 (𝑟 2 +𝑎2 )
E1 along AP is resolved into two components as E1cosθ along a line ∥el to AB and
E1sinθ along the bisector line in the upward direction.
|||ly E2 along PB is resolved in to two components as E2cosθ along a line ∥el to AB
and E2sinθ along the bisector in the down ward direction.
|E1| = |E2|
∴ two equal and opposite components E1 sin θ and E2 sin θ cancel each other.
Field at ‘P’ due to the dipole is
EB = E cosθ + E cosθ = 2 E cos θ
1 𝑞 𝑎
EB = 2 x 4πℰ x (𝑟 2 +𝑎2 ) x cosθ cos θ =
0 (𝑟 2 +𝑎2 )1/2
1 2𝑞 𝑎
EB = x (𝑟 2 +𝑎2 ) x (𝑟 2 +𝑎2 )1/2 q x 2a = P
4πℰ0
1 𝑃
EB = x along a line ∥el to the axis directed from +ve
4πℰ0 (𝑟 2 +𝑎2 )3/2
charge towards –ve charge of dipole.
When a << r, a2 can be neglected compared with r2
→
EB =
𝟏 𝐏
x 𝒓𝟑 or → 1
𝐸𝐵 4πℰ0 x 𝑟 3
𝑃
𝟒𝛑𝓔𝟎 =
→
Direction : Electric field on the equatorial plane (𝑬 ) of a dipole is opposite to the direction of
𝑩
⃗⃗ ).
dipole moment (𝑷
This theorem states that “the total electric flux over a closed surface enclosing
𝟏
charges is equal to 𝓔 times the total charge enclosed by the surface”.
𝟎
𝟏
𝚽= [Q]
𝓔𝟎
𝛌
E= 𝟐𝝅𝓔𝟎ɤ.
13. Obtain an expression for electric field due to an uniformly charged
plane sheet.
Electric flux will be through the end
faces Δs and Δs1 only.
1
Φ= ℰ0
x 𝜎 x Δs …………… (2) ( q = 𝜎 x Δs )
From equations (1) and (2)
𝜎 x Δs
2 E x Δs = ℰ
0
𝝈
E= 𝟐𝓔𝟎
14. Derive an Expression for Electric field due to a uniformly charged thin
spherical shell.
a) At a point outside the shell:
From this equation it is observed that a charged spherical shell behaves as if it’s
total charge is assumed to be concentrated at the center.
b) At a point on the surface (r = R) :
The electric intensity E for the points on the surface of charged spherical shell is
given by
1 𝑞
E = 4𝜋ℰ x 𝑅2
0
1 𝜎 4𝜋𝑅2 𝑞
= x r=R (By def𝑖𝑛𝑖𝑡𝑖𝑜𝑛, 𝜎 = , ... q = 𝜎4𝜋𝑅2)
4𝜋ℰ0 𝑅2 4𝜋𝑅2
𝝈
E= 𝓔𝟎
Work done in moving a unit +ve charge from A to B against the field direction is
given by, dw = - F x dx
1 Q
dw = - 4𝜋ℰ0
x 𝑥2
dx
|||ly Work done in bringing a unit +ve charge from ∞ to the point ‘ P ’ against the
field direction is given by
d 1 Q
∫ dw = - ∫∞ 4𝜋ℰ0
x
𝑥2
𝑑𝑥
1 d 1
w = - 4𝜋ℰ x Q ∫∞ 𝑥 2 dx
0
1 1 d
w= - xQ -
4𝜋ℰ0 𝑥
∞
1 1 1
W=- xQ - +∞
4𝜋ℰ0 𝑑
1 𝑄
W= x
4𝜋ℰ0 𝑑
By def W = V,
Potential
𝟏 𝑸
V= x
𝟒𝝅𝓔𝟎 𝒅
This work done equals the potential difference between the surfaces A and B.
∴ 𝐝𝐖 = 𝐕𝐀 − 𝐕𝐁 = 𝐕 − (𝐕 − 𝐝𝐕) = 𝐝𝐕 ……………….(2)
From equations (1) and (2) ,
−E dr = dV
𝐝𝐕
𝐄 = − 𝐝𝐫
⃗ is in the direction of decreasing
The negative sign shows that the direction of the electric field E
potential.
4. Obtain an expression for electric potential energy of a system of
two point charges in the absence of external electric field.
Q1 d. Q2
A B
Let the charge Q1 is first brought from infinity to the point A.
No work is done because there is no electric field . i.e . W1 = 0
Now the charge Q2 is brought from ∞ to the point B against the field of Q1. Work
is done in this process.
This work done is given by W2 = V x Q2
1 𝑄1
Where ‘V’ is the potential at B Due to charge Q1 & is given by V= x
4𝜋ℰ0 𝑑
1 𝑄1
∴ W2 = x x Q2
4𝜋ℰ0 𝑑1
1 𝑄1
Total work done: W = W1 + W2 = 0 + = x x Q2
4𝜋ℰ0 𝑑1
∴ U= 𝟏 x
𝑸𝟏 𝑸𝟐
𝟒𝝅𝓔𝟎 𝒅
5. Derive an expression for electric potential energy of an electric
dipole placed in a uniform electric field.
𝑄 ℰ0 𝐴 𝑄
= By definition, = C capacitance
𝑉 𝑑 𝑉
∴ 𝓔𝟎 𝑨
C=
𝒅
This is the expression for capacitance of parallel plate capacitor with air as
dielectric.
When the space between the plates is filled with dielectric medium. ℰ ℰɤ𝐴
C = 0𝑑
As capacitors are in series charge on each of them will be same as Q. The applied
potential difference V divides itself into V1 and V2 across C1 and C2 respectively
such that
V = V1 + V2, ---- (1)
Charge on each capacitor is Q = C1V1 and Q = C2V2
𝑄 𝑄
∴ V1 = 𝐶 , V2 = 𝐶
1 2
Eqn., (1) becomes
𝑄 𝑄
V= +
𝐶1 𝐶2
1 1
V=Q + … … … … … .. (2)
𝐶1 𝐶2
If Cs is the equivalent capacitance of the combination
𝑄
Then V = 𝐶 ----- (3)
𝑠
From eqn., (2) and(3)we get
𝑄 1 1
= Q +
𝐶𝑠 𝐶1 𝐶2
𝟏 𝟏 𝟏
=𝑪 +𝑪
𝑪𝒔 𝟏 𝟐
As capacitors are in parallel potential difference across each of them will be same
as the applied potential difference ‘V’. The total charge Q is given to the system by
the applied voltage divides itself into Q1 & Q2 for the capacitors C1 , C2
respectively.
Such that, Q = Q1 + Q2 ……… (1)
The charge on the first capacitor is given by Q1 = C1V , Q2 = C2 V
Equation (1) becomes
Q = C1 V + C2 V
Q = V [ C1 + C2] -----------(2)
Cp = C1 + C2
CURRENT ELECTRICITY
1. State and explain Ohm’s law.
This law states that, the current flowing through a conductor is directly proportional to the
potential difference between the ends of the conductor. Provided temperature and other
physical conditions of the conductor remaining constant”
𝐼∝𝑉
1
𝐼 = 𝑅𝑉
𝑽 = 𝑰𝑹
2. Write any three limitations of Ohm’s law.
1) The variation between Current and Potential difference is non linear.
2) The relation between Current and Potential difference is non unique.
3) Ohm’s law is not applicable for semiconductors.
4) Ohm’s law is not applicable for conductors at very low and at very high temperature.
3. Name the two factors on which the resistance of a metallic wire depends?
Resistance of a metallic wire depends on
a) length of the wire (R α L )
1
b) area of the wire (R α 𝐴 )
c) Temperature (R α T)
i i
E
E
3.
𝒆𝑬𝝉
|Vd| = 𝒎
Let I be the current in the conductor due to the potential difference 𝑉 across the conductor, then
according to ohm’s law
𝑉 = 𝐼𝑅 ………….(i)
The electric field 𝐸 produced in the conductor is given by
𝑉
𝐸=𝐿
∴ 𝑉 = 𝐸𝐿 ………….(ii)
From (i) and (ii) we get
𝐸𝐿 = 𝐼𝑅
𝐿 𝐿
𝐸𝐿 = 𝐼 × 𝜌 (𝑅=𝜌 )
𝐴 𝐴
𝐼
𝐸𝐿 = 𝜌𝐽𝐿 ( =𝐽)
𝐴
𝐸 = 𝜌𝐽
𝐸 1
𝐽=𝜌 ( 𝜌 = 𝜎)
⃗⃗⃗𝑱 = 𝝈𝑬
⃗ → This is the vector form of ohm’s law.
𝒏𝒆𝟐 𝝉
7. Obtain an Expression for conductivity (𝝈 = ) of a conductor.
𝒎
𝒏𝒆𝟐 𝝉
𝝈= → This is the expression for conductivity
𝒎
3) Nichrome :
10. Obtain an expression for effective emf and internal resistance Cell in parallel. (5 M)
𝐸1 𝑟2 +𝐸2𝑟1 𝑟1 +𝑟2
I= - V
𝑟1 𝑟2 𝑟1 𝑟2
𝑟1 +𝑟2 𝐸1 𝑟2+𝐸2𝑟1
V
𝑟1 𝑟2
=
𝑟1 𝑟2
-I
𝐸1 𝑟2+𝐸2𝑟1 𝑟1 𝑟2
V= -I ----- (1)
𝑟1 +𝑟2 𝑟1 +𝑟2
For the combination we have
V = Eeff – I reff. ------ (2)
Comparing equations (1) and (2) we get
11. Obtain a condition for Wheat stone’s Bridge network using Kirchhoff’s
rules.(5 M)
𝐵 = 𝜇0 𝑛 𝐼
𝑁
Where n = 𝑙 = number of turns per unit length
I = current passing through the solenoid
𝜇0 = Absolute permeability of air
It will be along the perpendicular to the plane containing the point and the4
element.
⃗⃗⃗⃗ 𝑋⃗⃗𝑟
𝜇 𝑖 .𝑑𝑙
Biot Savarts law in Vector form : ⃗⃗⃗⃗⃗
𝑑𝐵 = 0 3
4𝜋 𝑟
7. Derive an expression for magnetic field at a point along the axis of circular coil carrying
current. (5 M)
Magnetic field produced at P due to current in the element is given by Biot Savart’
𝜇 𝐼 𝑑𝑙 𝑠𝑖𝑛𝜃
dB = 4𝜋0 𝑟 2 θ = 900 , sin θ = 1
𝜇 𝐼 𝑑𝑙
dB = 4𝜋0 𝑟2
dB is resolved into two components as dB cosθ along the axis and dB sinθ ⊥ to the axis.
Magnetic field produced at P due to current in the full loop is given by
∑ 𝒅𝑩 = ∑ 𝒅𝑩 𝐜𝐨𝐬 𝜽
𝜇0 𝐼 𝑑𝑙 𝜇0 𝐼
B=∑ 4𝜋 𝑟2
cos 𝜃 = 4𝜋 𝑟 2
cos 𝜃 ∑ 𝑑𝑙 (∑ 𝑑𝑙 = 2πR )
𝜇0 𝐼
B= cos 𝜃 x 2πR In ∆ OAP, cos θ = R/r
4𝜋 𝑟 2
r2 = R 2 + x 2 => r = (R2 + x2) ½
𝜇0 𝐼 𝑅
B= x 𝑟 x 2πR ... r3 = (R2 + x2) 3/2
4𝜋 𝑟 2
𝜇0 𝐼
B= 2πR2
4𝜋 𝑟 3
𝝁𝟎 𝑰
B= 𝟑 2 π R2 along the axis towards the observer
𝟒𝝅
(𝑹𝟐 + 𝒙𝟐 )𝟐
𝝁𝟎 𝐧 𝐈
At the centre of the coil x = 0 , B=
𝟐 𝑹
𝑽
∴𝑹= −𝑮
𝑰𝒈
Voltage sensitivity is
1) Directly proportional to number of turns in the coil.
2) Directly proportional to strength of the magnetic field.
3) Directly proportional to area of coil.
4) Inversely proportional to couple per unit twist of the suspension.
5) Inversely proportional to resistance of the galvanometer coil.
Also, τi α θ
τi = C θ ------- (2)
From (1) and (2), n A I B = C θ ,
5. When placed in 5. The lines of force prefer to 5. The lines of force tend to
magnetic field, the lines of force pass through the crowd into the specimen.
tend to avoid the substance. substance rather than air.
ELECTROMAGNETIC INDUCTION
1. State and explain Faraday’s law of EMI:
This law states that the magnitude of the induced emf is directly proportional to the rate of
change of magnetic flux.
If e is the induced emf when the magnetic flux changed by 𝑑Φ in a time interval dt then
from Faraday’s law :
𝒅𝚽
i.e. e=-
𝒅𝒕
Significance of Lenz’s law: Law of conservation of energy
When one pole of magnet is Suddenly brought near one face of coil connected to sensitive
galvanometer. It shows momentary deflection indicating the flow of momentary current in it, when
the magnet is suddenly withdrawn then also there is deflection but in opposite direction. Similar
effect is also observed when the coil is moved with respect to stationary magnet. No emf is produced
when both coil and magnet are at rest. This illustrates the phenomenon of electromagnetic induction.
ALTERNATING CURRENT
1. What is a Transformer? Explain the working of a Transformer.
TRANSFORMER: Transformer is a device used to step up or step down alternating voltages.
Principle: It works on the principle of mutual induction.
Construction: It consists of two coils, primary P and secondary S of
fine insulated wire wound on soft iron core of thin laminations
insulated from each other. Input is fed to the primary, output is taken
across the secondary.
Working:
As input is alternating, at every alteration magnetic flux linking round
the secondary changes. Therefore an emf of the same nature is induced in the secondary. The
magnitude of output voltage depends on number of turns in primary and secondary coils.
Let Vp and Vs are the input and output voltages. np and ns be the number of turns in primary and
secondary.
Then it can be shown that
Vs / Vp = ns / np = T
Where, T is a constant of the transformer called as turns ratio.
2. Mention any three Sources of Energy losses in Transformer:
Energy losses in transformer are
1) Magnetic flux leakage loss
2) Eddy current loss
3) Resistance of winding loss
4) Hysteresis loss
ELECTRO-MAGNETIC WAVES
1. What is displacement current? Write the mathematical form for displacement
current?
“The current which comes into play in the region in which the electric field and the electric
flux is changing with time”.
𝑑𝜑𝐸
Mathematical form: ID = ∈0
𝑑𝑡
2. Write any two Properties of electromagnetic waves.
1. All these radiations travels in straight line with velocity 3x10 8 m/s in air
or vacuum.
2. The ratio of magnitudes of electric and magnetic field vectors in free
space is constant equal to c
RAY OPTICS
1. Relation between focal length and Radius of curvature for concave mirror (f = R / 2) :
Consider a ray of light, AB || PC,
and CP ≈ CB = R, is the radius of curvature.
The ray AB, after reflection from mirror will pass through
F and obeys law of reflection,
i.e., i = r. ------- (1) where i is the angle of
incidence and r is the angle of reflection.
PC = PF + FC = PF + PF
R = 2 PF = 2f (... PC = R and PF = f , focal length)
f=R/2
3. Write the Cartesian sign conventions used in analyzing reflection of light by spherical
mirrors.
1) All distances are measured from the pole of the spherical mirror along the principal axis.
2) The distances measured along the direction of incident light are taken as positive and
those measured in the direction opposite to the direction of incident light are taken as negative.
3) The heights measured upwards perpendicular to the principal axis are taken as positive and the
heights measured downwards perpendicular to the principal axis are taken as negative.
4. Write the ray diagram for formation of image in the simple microscope.
𝒏𝟐 𝒏𝟏 𝒏𝟐 −𝒏𝟏
6. Derive the relation connecting n, u, v and R. (Derive 𝒗
− 𝒖
= 𝑹
)
Let ‘P’ be the pole , ‘C’ be the centre of curvature and
‘R’ be the radius of curvature of a small aperture
spherical refracting surface.
CMN is the normal at M. 𝑖 is the angle of incidence and
𝑟 is the angle of refraction.
PM
In triangle PMO: tan MOP = tan α = PO
PM
In triangle PMI: tan MIP = tan β = PI
PM
In triangle MCP: tan MCP = tan γ = PC
PM PM
In triangle OMC, 𝑖 = 𝛼 + 𝛾 = + ,
PO PC
In triangle MCI, 𝛾 = 𝑟 + 𝛽
PM PM
r=γ–β= −
PC PI
By snell’s law,
𝑛1 sin 𝑖 = 𝑛2 sin 𝑟 (as angles are small, sin i ≈ i & sin r ≈ r )
𝑛1 𝑖 = 𝑛2 𝑟
PM PM PM PM
𝑛1 [ PO + ] = 𝑛2 [ − ]
PC PC PI
𝑛1 𝑛1 𝑛2 𝑛2
+ = −
𝑃𝑂 𝑃𝐶 𝑃𝐶 𝑃𝐼
From figure: PO = -u, PC = R & PI = v
𝑛1 𝑛1 𝑛2 𝑛2
− + = −
𝑢 𝑅 𝑅 𝑣
𝒏𝟐 𝒏𝟏 𝒏𝟐 −𝒏𝟏
∴ − =
𝒗 𝒖 𝑹
𝑨+𝑫
𝑺𝒊𝒏 ( 𝟐
)
7. Derive the expression : n = 𝑨 for refraction through a prism. (With usual
(𝟐)
notations)
A ray of light PO incident ray, OO1 is the refracted ray
O1Q is the emergent at the face AC.
MN and MN1 are the normal.
In quadrilateral AOMO1
∟A + ∟M = 1800 ------------ (1)
In ∆ OMO
le 1
n = sin (A + D) / 2
sin A / 2
WAVE OPTICS
1. Define Wavefront. Mention the different types of wavefronts and their source.
A wavefront is defined as the continuous locus of all the particles which are
vibrating in the same phase.
Wavefronts due to point source => Spherical wavefront
Wavefronts due to line source => Cylindrical wavefront
Wavefronts from large distances => Plane wavefronts
2. Huygens’ Principle of (Secondary waves) Wave Propagation
(i) Every point on a given wave-front may be regarded as a source of new disturbance.
(ii) The new disturbances from each point spread out in all directions with
the velocity of light and are called the secondary wavelets.
(iii) The surface of tangency to the secondary wavelets in forward direction at
any instant gives the new position of the wave-front at that time.
3. Prove Snell’s law of refraction at a plane surface using Huygens’s principle.
Let XY be a plane refracting surface separating two media 1 and 2 of refractive indices n 1
and n2
If the secondary wavelets from B strike the surface X Y at C in time 𝑡 then
BC = v1t and similarly AD = v2t
𝐵𝐶
From fig in Δ , sin 𝑖 = 𝐴𝐶
𝐴𝐷
Again, from fig in Δ 𝐴𝐷C : sin 𝑟 =
𝐴𝐶
𝑆𝑖𝑛 𝑖 𝐵𝐶
=
𝑆𝑖𝑛 𝑟 𝐴𝐷
𝑆𝑖𝑛 𝑖 𝑣1 𝑐 𝑐 1 𝑛2
= x = x 𝑐 =
𝑆𝑖𝑛 𝑟 𝑣2 𝑐 𝑣2 𝑛1
𝑣1
𝑛1 sin 𝑖 = 𝑛2 sin 𝑟
This is Snell’s law of refraction.
4. Using Huygens principle show that angle of incidence is equal to the angle of
reflection during a plane wave front reflected by a plane surface.
Let XY be a plane reflecting surface and AB be a plane wavefront incident on the surface
at A. PA and QBC are perpendiculars drawn to AB at A and B respectively.
Here, CD is the reflected plane wavefront and AD is the reflected ray.
∆𝑥 𝐵𝐶
w.k.t , v = =
∆𝑡 𝑡
BC = v t
Similarly, AD = v t
𝐵𝐶 𝑣𝑡
From the figure, In Δ ABC , Sin i = = ……………. (1)
𝐴𝐶 𝐴𝐶
𝐴𝐷 𝑣𝑡
In ADC , Sin r = = ……………. (2)
𝐴𝐶 𝐴𝐶
INTERFERENCE DIFFRACTION
1. The modification in the intensity when 1. The phenomenon of light waves bending
two similar light waves traveling in round the corners or obstacles, is called
same direction super impose on each diffraction.
other is called interference. 2. It is produced due to the superposition of
2. It is produced due to superposition of no. of secondary waves of same sources.
two waves from two coherent sources. 3. Diffraction pattern consists of central
3. Interference pattern consists of alternate bright band bordered by alternate dark
bright and dark band. and bright band of decreasing intensity.
4. Interference bright bands are of equal 4. Diffraction bright bands are of unequal
thickness and intensity. thickness and intensity.
Conclusions:
1) Photoelectric effect is instantaneous effect and takes place due to elastic collision between
photon and electron inside the metal.
2) If ν < ν0, then ½ mv2 max is negative, which is not possible. Therefore, for
photoelectric emission to take place ν > ν0.
3) It is clear that ½ mv2 max α ν as h and ν0 are constant.
This shows that K.E. of the photoelectrons is directly proportional to the frequency of
the incident light.
Observations :
(i) Most of α-particles pass through the gold foil unreflected.
(ii) A very small number of α-particles (1 in 8000) suffered large angle deflection.
(iii) Some of them retraced their original path or suffered 180° deflection.
ℎ
According to de-Broglie, λ = 𝑚𝑣
𝑛
𝑛ℎ
. . 2𝜋rn =
.
𝑚𝑣𝑛
𝒏𝒉 𝒉
m vn r n = = n ( 𝟐𝝅 )
𝟐𝝅
SEMICONDUCTOR ELECTRONICS
1. Explain the Classification of Solids on the basis of energy bands into conductors, semiconductors
and insulators :
Sl.
No Conductors Semiconductors Insulators
1 Conductivity is very high Conductivity is between less Conductivity is negligible
than that of conductors
2 Resistivity is very low Resistivity is more than Resistivity is very large
conductors
3 Temperature co-efficient Temperature co-efficient of Temperature coefficient of
of resistance is positive resistance of a Sc is negative resistance is slightly
for conductor. and large. negative.
4 Type of bonding present is Type of bonding present is Type of bonding present is
metallic bonding Covalent ionic. (or covalent)
5. Ex: Cu, Ag, Au etc Ex: Ge, Si etc Ex: Wood, Plastic, mica
etc.
n-type p-type
1) Majority charge carriers are electrons. 1) Majority charge carriers are holes.
2) Minority charge carriers are holes. 2) Minority charge carriers are electrons.
3) Produced by adding pentavalent impurities 3) They are produced by adding trivalent impurities
4) Electrical conductivity is mainly due to free 4) Electrical conductivity is mainly due to holes. .
electrons. Ex: Ge doped with Indium
Ex: Ge doped with Arsenic
4. Explain the Action of diode when forward biased. Draw IV curve for it.
Diode is said to be forward biased when p-side of the diode is connected to positive of the battery and n-side
of diode is connected to negative of the battery.
Positive of the battery attracts electron from n-side to p-side through the junction, negative of the battery
attracts holes from p-side to n-side through the junction therefore thickness of depletion layer decreases, its
resistance decreases and conductivity increases, it conducts current. A diode conducts current when it is
forward biased.
5. Explain the Action of diode when reverse biased. Draw IV curve for it.
Diode is said to be reverse biased when p-side is connected to negative of the battery and n-side is connected
to positive of the battery. The positive of the battery attracts electrons directly from n-side. Negative of the
battery attracts holes directly from p-side, thickness of depletion layer increases. Its resistance increases and
conductivity decreases therefore it does not conduct current.
A half wave rectifier is one in which rectification is done for only one half cycle of input AC.
Working :
(i) During the positive half cycle of input AC, A is +ve and B is –ve hence diode is forward
biased, it conducts current therefore a current flows through the load resistance, there
will be voltage across the load resistance.
(ii) During negative half cycle, A is –ve and B is +ve hence diode becomes reverse biased, it
will not conduct current, no current flows through the load resistance and there is no
voltage across the load resistance. Thus half cycle of input AC is blocked by the diode.
This process is called as half wave rectification. Output is DC but not steady.
A full wave rectifier is one in which rectification is done for the complete (both) cycle of input Ac.
Working:
(i) During positive half cycle of input AC , A is +ve and B is –ve hence diode D1 is forward
biased and D2 is reverse biased, D1 only conducts current. Current flows through the
load resistance in the direction D1 RL T there will be output voltage across the load
résistance.
(ii) During negative half cycle of input AC, A is –ve and B is +ve hence diode D2 is forward
biased and D1 is reverse biased. Diode D2 only conducts current. A current flows
through the load resistance in the direction D2 RL T. There will be voltage across the load
resistance.
In both the cases current flows in the same direction through the load resistance.
Therefore output is DC and steady. This process is called as “full wave rectification”.