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Applied Electronics I Solved Questions

The document provides calculations for base, collector, and emitter currents, as well as the collector-emitter voltage and power dissipation for a common-emitter circuit. It also analyzes the impact of varying beta on the Q-point in a voltage divider bias circuit and outlines the design of a common-base circuit with specific current and voltage requirements. Key parameters and results for each circuit are presented, including resistance values and current calculations.

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67 views2 pages

Applied Electronics I Solved Questions

The document provides calculations for base, collector, and emitter currents, as well as the collector-emitter voltage and power dissipation for a common-emitter circuit. It also analyzes the impact of varying beta on the Q-point in a voltage divider bias circuit and outlines the design of a common-base circuit with specific current and voltage requirements. Key parameters and results for each circuit are presented, including resistance values and current calculations.

Uploaded by

teklesisay76
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Applied electronics I worksheet, 2024/25

1. Calculate the base, collector, and emitter currents and the C–E voltage for a common-emitter
circuit. Calculate the transistor power dissipation. For the circuit shown in Figure 1, the
parameters are: 𝑉𝐵𝐵 = 4 V, 𝑅𝐵 = 220 kΩ, 𝑅𝐶 = 2 kΩ, 𝑉𝐶𝐶 = 10 V, 𝑉𝐵𝐸 (on) = 0.7 V, and β =
200.

Solution: 1
Referring to input side of Figure 1, the base
current is calculated as
𝑉𝐵𝐵 − 𝑉𝐵𝐸 4 − 0.7
𝐼𝐵 = = = 15 𝜇A
𝑅𝐵 220
The collector current then is
𝐼𝐶 = 𝛽𝐼𝐵 = 200 ∗ 15 𝜇A = 3 mA
Figure 1 The emitter current is
𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶 = (1 + 𝛽)𝐼𝐵 = 201 ∗ 15 𝜇A =
Referring to output side of Figure 3.02 mA
1, the collector to emitter voltage
is calculated as
The power dissipated in the transistor is 3
𝑉𝐶𝐸 = 𝑉𝐶𝐶 - 𝐼𝐶 𝑅𝐶 = 10 − 3*2 = 4V calculated to be
𝑃𝑇 = 𝐼𝐵 𝑉𝐵𝐸 + 𝐼𝐶 𝑉𝐶𝐸 ≌ 𝐼𝐶 𝑉𝐶𝐸 = 12𝑚𝑊
2

2. Analyze a circuit using a voltage divider bias circuit, and determine the change in the Q-point
with a variation in β when the circuit contains an emitter resistor. For the circuit given in
Figure 2, let 𝑅1 = 56 kΩ, 𝑅2 = 12.2 kΩ, 𝑅𝐶 =2 kΩ, 𝑅𝐸 = 0.4 kΩ, 𝑉𝐶𝐶 = 10 V, 𝑉𝐵𝐸 (on) = 0.7
V, and β = 100.

Circuit
simplified
for DC
analysis
Solution:
If the current gain of the transistor were to
Referring to input side of Figure 2, the base decrease to β = 50 or increase to β = 150, we obtain
current is calculated as the following results:
𝑉𝑇𝐻 − 𝑉𝐵𝐸 β 50 100 150
𝐼𝐵 =
𝑅𝑇𝐻 + (1 + 𝛽)𝑅𝐸
Q-point IBQ (μA) 35.9 21.6 15.5
𝑤ℎ𝑒𝑟𝑒 values ICQ (mA)
1.80 2.16 2.32
𝑉𝑇𝐻 =
𝑅2
𝑉 =
12.2
10 V = 1.79 V VCEQ (V)
𝑅1 +𝑅2 𝐶𝐶 68.2 5.67 4.81 4.40
𝑅𝑇𝐻 = 𝑅1 ||𝑅2 = 10 kΩ The load line and Q-points are plotted in Figure 3

The base current then is


1.79 − 0.7
𝐼𝐵 = = 21.6 𝜇A
10 + 101 ∗ 0.4
The collector current is
ICQ = β IBQ = (100)(21.6 μA) ⇒ 2.16 mA
and the emitter current is
I EQ = (1 + β)I B Q = (101)(21.6 μA) ⇒ 2.18 mA

The quiescent C–E voltage is then


Figure 3
VCE Q = VCC − ICQ RC − I EQ RE = 10 −
(2.16)(2) − (2.18)(0.4) = 4.81 V

3. Design the common-base circuit shown in Figure 4 such that I EQ = 0.50 mA and VCE Q = 4.0 V.
Assume transistor parameters of β = 120 and 𝑉𝐸𝐵 (on) = 0.7.
𝐼𝐸𝑄
V + = 𝐼𝐸𝑄 𝑅𝐸 + 𝑉𝐸𝐵 (on) + 1+𝛽 𝑅𝐵
0.5
5 = 0.5𝑅𝐸 + 0.7 + 121 10

Which yields

𝑅𝐸 = 8.52 kΩ
𝛽 120
𝐼𝐶𝑄 = 𝐼
1+𝛽 𝐸𝑄
= 121 0.5 = 0.496 mA
KVL (emitter to collector loop)

5 = (0.5)(8.52) + 4 + (0.496)RC + (−5)


which yields

RC = 3.51 kΩ

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