fhyristor Thyristor is a four layer, 3 junction, 3 terminal semicontrolled p-n-p-n gemiconsuctor switching device, A (Anoce} . eae) K (Cathode) (Circuit Symon) [Schematic diagram) Static V-I Characteristics of Thyristor 4 “} freeware conduction On state ‘on stato} voltage Giop Latching curent y) Holomng carn dy) Reverse jaakage a> bya o Yen fens + Forward Fomgraiggiage elecking (OFF) where, = Forward breakover voltage Reverse breakover voltage Gate current Thyristor Operates in Three-Region 1. Forward blocking mode: Device is in OFF state. Anode is positive, cathode is negative and V, < Vag Ij=9Junction: J, + Forward bias Jos Reverse bias Js Forward bias Only forward leakage current flow. Forward conduction mode: Device is in ON state, Anode is positive, cathcus is negative and V, = Voy =o Junction J, Forward bias Jz Breakdown occur Jeg Forward bias Reverse Blocking mod. Device is in OFF state, Anode is negative, cathode is positive =o Junetion Jy > Reverse bias Jo Forward bias Ja Reverse bias @ Latching Current (1,) Iis the minimum anode current to be attained above which the device continues to be in the ON state even after removal of the gate current @ Holding Current (1,,) {tis the minimum anode current to be attained below which the device comes into the OFF state after applying a reverse vollage across it untill t regains its blocking capability. Procedure to Turn-off the SCR Bring down the anode current below holding current. Aftor that apply a reverse voltage across it till excess carrier are removed and il regains its blocking capability Remember: + Byincreasing the magnitude of Gate signal the breakciown voltage reduces * _Latching currentisretated to turn-on process and holding currentis elated toturr-offprocess. * > dy or 10K, The Gate signal needs to provide untill,the anode currentisjustabove the latching value, so thatit continuous tobe in ON state even after removing gate signal Gate looses the control after SCRis turn-on, thats why itis called partially controlled device. By increasing the value of load inductance the minimum pulse width required to turn-on the SCRis also increase. By increasing the value of resistance connected in series with inductive load, the minimum gate current width requireis constant. By adding a resistance in parallel with load resistance the minimum pulse width is changed, Switching Characteristics of Thyristor anode voltage (¥,) anc gate curont (i) {nial anode votage a Anode current “ ‘4 ool reskage E fe-Stoagy state of ‘peraTinn-0n Charadteristies:, £5) Delay tee tt) Bie time () = Spreal time ty) Tuen-sff Characteristics... Tq ton ta thay Device tno time reverse recovery time Gate recovery tine Srout ten-off tone 291,100.14, 13,100.94, 093,101, Remember: For successful commutation, t.> Triggering Methods of SCR (i) Forward voltage triggering (i) Gate wiggering (ii) dv/at triggering (iv) Temperature triggering (¥) Light tiggering Remember: Light triggering thyristors are used in HVDC transmission system. + The size of pulse transformer and average gate power dissipation can| reduced by using high frequency gating. String Efficiency Itis measure of utilisation of SCRs rating to its full capacity, Total string voltage/eurrent rating (individual voitage/eurrent rating af one SGA} n= Number of SCRs connected in series/parallel Derating factor = 1 Sinng efficiency Series Connection of SCR When the available voltage rating of SCR is not sulficient then we ha to connect some of the SCR in series so that they share the appli voltage during the off-state. jobiem Related to Series Connected SCR jnequal Sharing of Voltage: )) Due to difference in forward blocking characteristics of series connected SCR, To overcome this problem, we use “static equalizing circuit". h) Due to difference in the reverse recovery characteristic. To over come this problem, we use “dynamic equilising circuit" Dynamic equatizing ~! Static equalizing f iret [nem =v, co = BE DAGR @-DAl, Vy — Ve Yom = Maximum permissible blocking voltage Aly, = Mojoney—baereny = Difference between maximum and minimum leakage current f= Number of SCR connected in series V, = Totat stiing voltage AQ, = Difference in recovery charge prallel Connection of SCR When available current rating of the SCR is not sufficient then we have to cornect some of the SCRs in paraltel foblem Related to Parallel Connected SCR equal sharing of current } Que to difference in conduction characteristics of both SCR connected in parallel, To over come this problem connect current oquilsing circuit } Due to temperature difference and to over came this problem we put all SCR in a. common symmetrical heat sink.Thermal Resistance where, P,, = Average rate of heat generated T, = dunotion temperature To = Case temperature Tg = Sink temperature T, = Ambient temperature Qc = Thermal resistance between junction and case ®. = Thermal resistance belween case and sink 45, = Thermal resistance between sink and ambient Leet protection) inguctor OO Overvotage A protection RO4e— abe Remember: Crouit fer protection of SoA * Gate current magnitudes are of the order of 20 to 200 mA. *Triacis combination of antiparallel connection of two SCR. + Diacis antiparallel connection of two SCR when], Protection of Thyristor Gate Protection and cathode junction. [Device ‘Circuit eymbel Voltageleurrent ratings Diode Ae bh ex 50007 Tikes? “oe (Over current protection: Fuse or circuit breaker connected in sories kK with SCR to limit over-current, farscr verry Gi) Over voltage protection: Varistor are connected across SCR. =f % (iil) High dv/dt protection: Snubber circuit is provided across SCR. toy Lasca o Bon soo. (iv) High di/dt protection: Connect a inductor in series with SCR oe G (¥)_ Thermat protection: Provide heat sink in SCR. 2600 (c) ASCRIRCT A K 400A 6 (i) Over current protection: Connect a resistance in series with Gate. i i Ap KA (ii) Over voltage protection: Zener dicde is connected across the gate (a ato a Phy or Se smov 6 6 Gil) Protection against noise: Connect a capacitor and a resistor across oysin4 Pg eK aeov gate and cathode.mcr Go) tise Transistors. (oy aT 2 (ey MosreT 1000 treteored) go LEY Som s D test 6 12000 300A a © (aicet z00v ce 50 A