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Assignment 6

The document contains a series of questions related to transistor circuits, specifically focusing on common base connections and calculations involving emitter, collector, and base currents. It includes problems requiring the determination of various parameters such as alpha (α), beta (β), voltage drops, and Q points for different transistor configurations. Each question presents a unique scenario involving silicon or germanium transistors and requires specific calculations based on provided values.

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panditujjwalsharma045
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8 views

Assignment 6

The document contains a series of questions related to transistor circuits, specifically focusing on common base connections and calculations involving emitter, collector, and base currents. It includes problems requiring the determination of various parameters such as alpha (α), beta (β), voltage drops, and Q points for different transistor configurations. Each question presents a unique scenario involving silicon or germanium transistors and requires specific calculations based on provided values.

Uploaded by

panditujjwalsharma045
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Q1 In a common base connection, IE = 1mA, IC = 0.95mA.

Calculate the value of IB


Q2 In a common base connection, the emitter current is 1mA. If the emitter circuit is open, the collector
current is 50 μA. Find the total collector current. Given that α = 0.92
Q2 A n-p-n transistor at room temperature has its emitter disconnected. A voltage of 5 V is applied between
collector and base. With collector positive, a current of 0.2 μA flows. When the base is disconnected and the
same voltage is applied between collector and emitter, the current is found to be 20 μA. Find α, IE and
IB when collector current is 1 mA
Q4 In a common base connection, α = 0.95. The voltage drop across 2 kΩ resistance which is connected in
the collector is 2V. Find the base current.
Q5 For the common base circuit shown in Fig, determine IC and VCB. Assume the transistor to be of silicon

Q6 Determine the Q point of the transistor circuit shown in Fig. Also draw the d.c. load line.
Given β = 200 and VBE = 0.7V

Q7 For the circuit in Fig, find the base supply voltage (VBB) that just puts the transistor into saturation.
Assume β = 200

Q8 Determine the Q point of the transistor circuit shown in Fig. Also draw the d.c. load line.
Given β = 100 and VBE = 0.7V
Q9 For the circuit shown in figure below, a silicon transistor with β= 45 is used with collector to base
resistor RB biasing with quiescent value of 5V for VCE. If VCC= 24 V,
RC= 10kΩ, RE= 270Ω, find the value of RB

Q9 For the circuit in Fig, find IC, IB, VCE, VC, VE, VCB. Assume the transistor to be of silicon, β = 200

Q10 For the circuit in Fig, find. β, RB, VCC Assume the transistor to be of germanium

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