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AD82584F

The AD82584F is a digital audio amplifier that supports 2x25W stereo or 1x50W mono output with advanced features such as a 30-band equalizer and dynamic range control. It operates with various input formats and sampling frequencies, providing robust protection against short circuits and over-temperature conditions. The amplifier is designed for applications including TV audio, powered speakers, and wireless audio systems.

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0% found this document useful (0 votes)
69 views87 pages

AD82584F

The AD82584F is a digital audio amplifier that supports 2x25W stereo or 1x50W mono output with advanced features such as a 30-band equalizer and dynamic range control. It operates with various input formats and sampling frequencies, providing robust protection against short circuits and over-temperature conditions. The amplifier is designed for applications including TV audio, powered speakers, and wireless audio systems.

Uploaded by

moafdj
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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ESMT AD82584F

2x25W Stereo / 1x50W Mono Digital Audio Amplifier


With 30 bands EQ and DRC Functions

Features Pre-scale/post-scale
2
 16/18/20/24-bits input with I S, Left-alignment  Anti-pop design
and Right-alignment data format  Level meter and power meter
 PSNR & DR(A-weighting)  I2S output with selectable Audio DSP point
Loudspeaker: 108dB (PSNR), 108dB (DR)@24V  Short circuit and over-temperature protection
2
 Multiple sampling frequencies (Fs)  Supports I C control without clock
2
8kHz and 32kHz / 44.1kHz / 48kHz and  I C control interface with selectable device
64kHz / 88.2kHz / 96kHz and address
128kHz / 176.4kHz / 192kHz  Support hardware and software reset
 System clock = 64x, 128x, 192x, 256x, 384x,  Internal PLL
512x, 576x, 768x, 1024x Fs  LV Under-voltage shutdown and HV Under-voltage
MCLK system: detection
256x~4096x Fs for 8kHz  Over voltage protection
64x~1024x Fs for 32kHz / 44.1kHz / 48kHz  Power saving mode
64x~512x Fs for 64kHz / 88.2kHz / 96kHz
64x~256x Fs for 128kHz / 176.4kHz / 192kHz Applications
BCLK system:  TV audio
64xFs for 32kHz / 44.1kHz / 48kHz  Boom-box, CD and DVD receiver, docking system
64xFs for 64kHz / 88.2kHz / 96kHz  Powered speaker
64xFs for 128kHz / 176.4kHz / 192kHz  Wireless audio
 Supply voltage
3.3V for digital circuit Description
4.5V~26V for loudspeaker driver
AD82584F is a digital audio amplifier capable of
 Supports 2.0CH/Mono configuration
driving 25W (BTL) each to a pair of 8Ω load speaker
 Loudspeaker output power@12V for stereo
and 50W (PBTL) to a 4Ω load speaker operating at
7W x 2CH into 8Ω <1% THD+N
24V supply without external heat-sink or fan
10W x 2CH into 4Ω <1% THD+N
requirement with play music. AD82584F provides
 Loudspeaker output power@18V for stereo
advanced audio processing functions, such as volume
15W x 2CH into 8Ω <1% THD+N
control, 30 EQ bands, audio mixing, 3D surround
 Loudspeaker output power@24V for stereo
sound and Dynamic Range Control (DRC). These are
25W x 2CH into 8Ω <1% THD+N 2
fully programmable via a simple I C control interface.
 Sound processing including:
Robust protection circuits are provided to protect
30 bands parametric speaker EQ
AD82584F from damage due to accidental erroneous
Volume control (+24dB~-103dB, 0.125dB/step)
operating condition. The full digital circuit design of
Dynamic range control
AD82584F is more tolerant to noise and PVT (Process,
Three Band plus post Dynamic range control
Voltage, and Temperature) variation than the analog
Power Clipping
class-AB or class-D audio amplifier counterpart
Programmed 3D surround sound
implemented by analog circuit design. AD82584F is
Channel mixing
pop free during instantaneous power on/off or
Noise gate with hysteresis window
mute/shut down switching because of its robust built-in
Bass/Treble tone control
anti-pop circuit.
DC-blocking high-pass filter
Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019
Revision: 1.6 1/87
ESMT AD82584F
Pin Assignment

BST_RA
BST_LB

GNDR
GNDR
GNDL
GNDL

NC

NC
NC

RA
NC
LB
AD82584F
48
47
46
45
44
43
42
41
40
39
38
37
ERROR 1 24 BST_LA
LA 1 36 RB
VDDL 2 PD 2 23 VDDL
35 VDDR
VDDL 3 VDDR LRCIN 3 22 LA
34
BST_LA 4 33 BST_RB BCLK 4 21 GNDL
NC 5 32 GVDD SDATA 5 20 LB
NC 6 AD82584F 31 VREG SDA 6 19 BST_LB
CLK_OUT 7 E-LQFP 48L 30 AGND
SCL 7 18 BST_RA
PBTL 8 29 NC
9 DGND SDATAO 8 17 RA
NC 28
NC 10 27 DVDD DVDD 9 16 GNDR
NC 11 26 TEST DGND 10 15 RB
NC 12 25 RESET VREG 11 14 VDDR
13
14
15
16
17
18
19
20
21
22
23
24

GVDD 12 13
BST_RB

E-TSSOP-24L
NC
ERROR

PD
MCLK
NC
NC

SDA
SCL
NC

LRCIN
BCLK
SDATA

AD82584F
ERROR 1 28 BST_LA
MCLK 2 27 VDDL
PD 3 26 LA
LRCIN 4 25 GNDL
BCLK 5 24 GNDL
SDATA 6 23 LB
SDA 7 22 BST_LB
SCL 8 21 BST_RA
RESET 9 20 RA
SDATAO 10 19 GNDR
DVDD 11 18 GNDR
DGND 12 17 RB
VREG 13 16 VDDR
GVDD 14 15 BST_RB

E-TSSOP-28L

Pin Description (E-LQFP 48L)

PIN NAME TYPE DESCRIPTION CHARACTERISTICS


1 LA O Left channel output A.
2 VDDL P Left channel supply.
3 VDDL P Left channel supply.
4 BST_LA P Bootstrap supply for left channel output A.

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 2/87
ESMT AD82584F
5 NC Not connected.
6 NC Not connected.
PLL ratio setting pin during power up, this
pin is monitored on the rising edge of reset.
PMF register will be default set at 1 or 16
times PLL ratio.
High: PMF [3:0] = [0000], 1 time of PLL ratio
TTL output buffer, internal pull Low
7 CLK_OUT I/O to avoid system BCLK over flow.
with a 100Kohm resistor.
Low: PMF [3:0] = [0001], 16 times of PLL
ratio.
This pin could be clock output pin also
during normal operating if EN_CLK_OUT
register bit is enabled.
Stereo/Mono configuration pin.
8 PBTL I
(Low: Stereo ; High: Mono)
9 NC Not connected.
10 NC Not connected.
11 NC Not connected.
12 NC Not connected.
13 NC Not connected.
2
ERROR pin is a dual function pin. One is I C This pin is monitored on the rising

address setting during power up. The other edge of reset. A value of Low (15-kΩ
2
14 ERROR I/O one is error status report (low active), It sets pull down) sets the I C device
by register of A_SEL_FAULT at address address to 0x30 and a value of High
0x1C B[6] to enable it. (15-kΩ pull up) sets it to 0x31.
Schmitt trigger TTL input buffer,
15 MCLK I Master clock input. internal pull Low with a 80Kohm
resistor.
16 NC Not connected.
17 NC Not connected.
18 NC Not connected.
Schmitt trigger TTL input buffer,
19 PD I Power down, low active. internal pull High with a 330Kohm
resistor.
Schmitt trigger TTL input buffer,
20 LRCIN I Left/Right clock input (Fs). internal pull Low with an 80Kohm
resistor.

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 3/87
ESMT AD82584F
Schmitt trigger TTL input buffer,
21 BCLK I Bit clock input. internal pull Low with an 80Kohm
resistor.
22 SDATA I Serial audio data input. Schmitt trigger TTL input buffer
2
23 SDA I/O I C bi-directional serial data. Schmitt trigger TTL input buffer
2
24 SCL I I C serial clock input. Schmitt trigger TTL input buffer
Schmitt trigger TTL input buffer,
25 RESET I Reset, low active. internal pull High with a 330Kohm
resistor.
26 TEST I This pin must connect to GND.
27 DVDD P Digital Power.
28 DGND P Digital Ground.
29 NC Not connected.
30 AGND P Analog Ground.
31 VREG O 1.8V Regulator voltage output.
5V Regulator voltage output. This pin must
32 GVDD O
not be used to drive external devices.
33 BST_RB P Bootstrap supply for right channel output B.
34 VDDR P Right channel supply.
35 VDDR P Right channel supply.
36 RB O Right channel output B.
37 GNDR P Right channel ground.
38 GNDR P Right channel ground.
39 RA O Right channel output A.
40 NC Not connected.
41 NC Not connected.
42 BST_RA P Bootstrap supply for right channel output A.
43 BST_LB P Bootstrap supply for left channel output B.
44 NC Not connected.
45 NC Not connected.
46 LB O Left channel output B.
47 GNDL P Left channel ground.
48 GNDL P Left channel ground.

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 4/87
ESMT AD82584F
Pin Description (E-TSSOP 24L)

PIN NAME TYPE DESCRIPTION CHARACTERISTICS


2
ERROR pin is a dual function pin. One is I C This pin is monitored on the rising

address setting during power up. The other edge of reset. A value of Low (15-kΩ
2
1 ERROR I/O one is error status report (low active), It sets pull down) sets the I C device
by register of A_SEL_FAULT at address address to 0x30 and a value of High
0x1C B[6] to enable it. (15-kΩ pull up) sets it to 0x31.
Schmitt trigger TTL input buffer,
2 PD I Power down, low active. internal pull High with a 330Kohm
resistor.
Schmitt trigger TTL input buffer,
3 LRCIN I Left/Right clock input (Fs). internal pull Low with an 80Kohm
resistor.
Schmitt trigger TTL input buffer,
4 BCLK I Bit clock input (64Fs). internal pull Low with an 80Kohm
resistor.
5 SDATA I Serial audio data input. Schmitt trigger TTL input buffer
2
6 SDA I/O I C bi-directional serial data. Schmitt trigger TTL input buffer
2
7 SCL I I C serial clock input. Schmitt trigger TTL input buffer
8 SDATAO O Serial audio data output. Schmitt trigger TTL input buffer
9 DVDD P Digital Power.
10 DGND P Digital Ground.
11 VREG O 1.8V Regulator voltage output.
5V Regulator voltage output. This pin must
12 GVDD O
not be used to drive external devices.
13 BST_RB P Bootstrap supply for right channel output B.
14 VDDR P Right channel supply.
15 RB O Right channel output B.
16 GNDR P Right channel ground.
17 RA O Right channel output A.
18 BST_RA P Bootstrap supply for right channel output A.
19 BST_LB P Bootstrap supply for left channel output B.
20 LB O Left channel output B.
21 GNDL P Left channel ground.
22 LA O Left channel output A.
23 VDDL P Left channel supply.
24 BST_LA P Bootstrap supply for left channel output A.

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 5/87
ESMT AD82584F
Pin Description (E-TSSOP 28L)

PIN NAME TYPE DESCRIPTION CHARACTERISTICS


2
ERROR pin is a dual function pin. One is I C This pin is monitored on the rising

address setting during power up. The other edge of reset. A value of Low (15-kΩ
2
1 ERROR I/O one is error status report (low active), It sets pull down) sets the I C device
by register of A_SEL_FAULT at address address to 0x30 and a value of High
0x1C B[6] to enable it. (15-kΩ pull up) sets it to 0x31.
Schmitt trigger TTL input buffer,
2 MCLK I Master clock input. internal pull Low with a 80Kohm
resistor.
Schmitt trigger TTL input buffer,
3 PD I Power down, low active. internal pull High with a 330Kohm
resistor.
Schmitt trigger TTL input buffer,
4 LRCIN I Left/Right clock input (Fs). internal pull Low with an 80Kohm
resistor.
Schmitt trigger TTL input buffer,
5 BCLK I Bit clock input. internal pull Low with an 80Kohm
resistor.
6 SDATA I Serial audio data input. Schmitt trigger TTL input buffer
2
7 SDA I/O I C bi-directional serial data. Schmitt trigger TTL input buffer
2
8 SCL I I C serial clock input. Schmitt trigger TTL input buffer
Schmitt trigger TTL input buffer,
9 RESET I Reset, low active. internal pull High with a 330Kohm
resistor.
10 SDATAO O Serial audio data output. Schmitt trigger TTL input buffer
11 DVDD P Digital Power.
12 DGND P Digital Ground.
13 VREG O 1.8V Regulator voltage output.
5V Regulator voltage output. This pin must
14 GVDD O
not be used to drive external devices.
15 BST_RB P Bootstrap supply for right channel output B.
16 VDDR P Right channel supply.
17 RB O Right channel output B.
18 GNDR P Right channel ground.
19 GNDR P Right channel ground.
20 RA O Right channel output A.

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 6/87
ESMT AD82584F
21 BST_RA P Bootstrap supply for right channel output A.
22 BST_LB P Bootstrap supply for left channel output B.
23 LB O Left channel output B.
24 GNDL P Left channel ground.
25 GNDL P Left channel ground.
26 LA O Left channel output A.
27 VDDL P Left channel supply.
28 BST_LA P Bootstrap supply for left channel output A.

Functional Block Diagram

MCLK
SDA
SCL

CLK_OUT

Reset POR ERROR


I2C Control
PD Interface PLL
CKDET
PBTL
Internal System Clock LA
SDATA
Input Audio Signal LB
BCLK PCM to PWM Power Stage
Interface Processing RA
LRCIN
RB

Output
Interface

SDATAO

Ordering Information

Product ID Package Packing / MPQ Comments

E-LQFP 48L 250 Units / Tray


AD82584F-LG48NRY Green
(7mmx7mm) 2.5K Units / Box (10 Trays)
E-LQFP 48L 2K Units / Reel
AD82584F-LG48NRR Green
(7mmx7mm) 1 Reel / Small box
62 Units / Tube
AD82584F-QG24NRT E-TSSOP 24L Green
100 Tubes / Small box
2.5K Units / Reel
AD82584F-QG24NRR E-TSSOP 24L Green
1 Reel / Small box
50 Units / Tube
AD82584F-QG28NRT E-TSSOP 28L Green
100 Tubes / Small Box
2500 Units / Reel
AD82584F-QG28NRR E-TSSOP 28L Green
1 Reel / Small Box

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 7/87
ESMT AD82584F
Available Package
Package Type Device No. θ ja(℃/W) Ψ jt(℃/W) θ jt(℃/W) Exposed Thermal Pad

E-LQFP 48L 22.9 1.64 34.9

E-TSSOP 24L AD82584F 26.8 1.83 27.1 Yes (Note1)

E-TSSOP 28L 28 1.33 27.1

Note 1.1: The thermal pad is located at the bottom of the package. To optimize thermal performance,
soldering the thermal pad to the PCB’s ground plane is suggested.
Note 1.2: θ ja, the junction-to-ambient thermal resistance is simulated on a room temperature (TA=25℃), natural
convection environment test board, which is constructed with a thermally efficient, 4-layers PCB
(2S2P). The simulation is tested using the JESD51-5 thermal measurement standard.
Note 1.3: Ψ jt represents the thermal parameter for the heat flow between the chip junction and the package’s
top surface center. It’s extracted from the simulation data for obtainingθ ja, using a procedure
described in JESD51-2.
Note 1.4: θ jt represents the thermal resistance for the heat flow between the chip junction and the package’s
top surface. It’s extracted from the simulation data with obtaining a cold plate on the package top.

Marking Information

AD82584F ESMT
Line 1 : LOGO
AD82584F ESMT
Tracking Code AD82584F
Line 2 : Product no. Date Code Tracking Code
Line 3 : Tracking Code
Line 4 : Date Code PIN1 DOT PIN1 DOT

E-LQFP 48L E-TSSOP 24L / 28L

Absolute Maximum Ratings (AMR)


Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device.

Symbol Parameter Min Max Units


DVDD Supply for Digital Circuit -0.3 3.6 V
VDDL/R Supply for Driver Stage -0.3 30 V
Output Pin (LA, LB, RA and RB) to GND 32 V
Vi Input Voltage -0.3 3.6 V
o
Tstg Storage Temperature -65 150 C
o
TJ Junction Operating Temperature 0 150 C
Human Body Model ±2K V
ESD
Charged Device Model ±750 V

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 8/87
ESMT AD82584F
Recommended Operating Conditions
Symbol Parameter Typ Units
DVDD Supply for Digital Circuit 3.15~3.45 V
VDDL/R Supply for Driver Stage 4.5~26 V
o
TJ Junction Operating Temperature -40~125 C
o
TA Ambient Operating Temperature -40~85 C

General Electrical Characteristics


o
Condition: TA=25 C (unless otherwise specified).

Symbol Parameter Condition Min Typ Max Units


IPD(HV) PVDD Supply Current during Power Down PVDD=24V 20 40 uA
Quiescent current for PVDD
IQ(HV) PVDD=24V 15 mA
(50%/50% PWM duty)
DVDD=3.3V,
IQ(LV) Quiescent current for DVDD (Un-mute) 31 mA
PBTL=Low
o
Junction Temperature for Driver Shutdown 165 C
TSENSOR o
Temperature Hysteresis for Recovery from Shutdown 35 C
UVDVDDH DVDD Under Voltage Release 2.99 V
UVDVDDL DVDD Under Voltage Active 2.89 V
UVPVDDH VDDL/R Under Voltage Release 7.7 V
UVPVDDL VDDL/R Under Voltage Active 7.1 V
OVH VDDL/R Over Voltage Active 29.2 V
OVL VDDL/R Under Voltage Release 28.5 V
PVDD=24V,
RDS(on) Static Drain-to-Source On-state Resistor, NMOS Id=500mA 180 m

PVDD=24V 9 A
L(R) Channel Over-Current Protection (Note 2)
PVDD=12V 8.5 A
ISC
PVDD=24V 18 A
Mono Over-Current Protection (Note 2)
PVDD=12V 17 A
VIH High-Level Input Voltage DVDD=3.3V 2.0 V
VIL Low-Level Input Voltage DVDD=3.3V 0.8 V
VOH High-Level Output Voltage DVDD=3.3V 2.4 V
VOL Low-Level Output Voltage DVDD=3.3V 0.4 V
CI Input Capacitance 6.4 pF
Note 2: Loudspeaker over-current protection is only effective when loudspeaker drivers are properly
connected with external LC filters. Please refer to the application circuit example for recommended
LC filter configuration.

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 9/87
Publication Date: Mar. 2019
10/87
AD82584F

LB RA PVDD Logic
PVDD 22nF 22nF Pin 0 1
470uF 1uF 0.1uF PD Power Down Normal
0.1uF 1uF 470uF Reset Reset Normal
PBTL Stereo Mono
GNDL

GNDL
GNDL

GNDL
LB

BST_LB

BST_RA

RA

Revision: 1.6
RB
LA RB
LA VDDR
VDDL 22nF (Note 5) (Note 4)
22nF VDDR (Note 3)
VDDL LA
BST_RB
BST_LA 1uF 470pF 15uH 1nF
GVDD 3A 0.1uF
VREG 10
1uF 0.22uF
PBTL
AD82584F AGND 10

Speaker
DGND 3.3V 15uH 0.1uF


470pF
0.1uF 3A 1nF
DVDD LB
TEST (Note 3)
3.3V
1M
(Note 5) (Note 4)
(Note 3)
RA
Application Circuit Example for Stereo

Elite Semiconductor Memory Technology Inc.


Reset
ERROR

1nF

SDATA
470pF 15uH

LRCIN
MCLK

BCLK
3A 0.1uF

SDA
SCL
PD
10
0.22uF
3.3V 10
4.7K 4.7K 3.3V

Speaker
1M 15uH 0.1uF


470pF 3A
1nF
1uF
RB
(Note 3)
Note 3: When concerning about short-circuit protection or performance, it is suggested using
the choke with its IDC larger than ISC.
ESMT

Note 4: These capacitors should be placed as close to speaker jack as possible, and their
values should be determined according to EMI test results.
Note 5: The snubber circuit is used to suppress overshoot voltage on output pin, and it is also
helpful with EMI suppression.
Publication Date: Mar. 2019
AD82584F

11/87
LB RA PVDD
PVDD 22nF 22nF
470uF 1uF 0.1uF
0.1uF 1uF 470uF
Logic
Pin 0 1
GNDL

GNDL
GNDL

GNDL
LB

BST_LB

BST_RA

RA

Revision: 1.6
RB
LA RB PD Power Down Normal
LA VDDR Reset Reset Normal
VDDL 22nF
VDDR
22nF PBTL Stereo Mono
VDDL
BST_RB
BST_LA 1uF
GVDD
3.3V VREG
1uF
PBTL
AD82584F AGND
LA
470pF
(Note 7)
DGND 3.3V (Note 6)
0.1uF 10
DVDD
10uH 1nF
TEST 10 6A 0.1uF
3.3V 470pF
1M LB
0.47uF

Elite Semiconductor Memory Technology Inc.


Application Circuit Example for Mono

Reset RA
ERROR

Speaker
SDATA
LRCIN
MCLK 470pF

BCLK


SDA
SCL
PD
10 10uH 0.1uF
6A 1nF
3.3V
4.7K 4.7K 3.3V 10
1M 470pF (Note 6)
RB
1uF
ESMT

Note 6: When concerning about short-circuit protection or performance, it is suggested using


the choke with its IDC larger than ISC.
Note 7: These capacitors should be placed as close to speaker jack as possible, and their
values should be determined according to EMI test results.
ESMT AD82584F
Electrical Characteristics and Specifications for Loudspeaker
 BTL (Bridge-Tied-Load) output for Stereo
o
Condition: TA=25 C, DVDD=3.3V, VDDL=VDDR=24V, FS=48kHz, Load=8 with passive LC lowpass filter
(L=15μ H with RDC=63mΩ , C=220nF); Input is 1kHz sinewave. Volume is 0dB unless otherwise specified.

Symbol Parameter Condition Input Level Min Typ Max Units


RMS Output Power (THD+N=0.15%) 25 W
PO
RMS Output Power (THD+N=0.10%) 15 W
(Note 9)
RMS Output Power (THD+N=0.08%) 10 W
THD+N Total Harmonic Distortion + Noise PO=7.5W 0.07 %
Maximum power
SNR Signal to Noise Ratio (Note 8) at THD < 1% 106 dB
@1kHz
DR Dynamic Range (Note 8) -60dB 108 dB
Vn Output Noise (Note 8) 20Hz to 20kHz 100 uV
VRIPPLE=1VRMS at
PSRR Power Supply Rejection Ratio -73 dB
1kHz
Channel Separation 1W @1kHz -72 dB
Note 8: Measured with A-weighting filter.
Note 9: Thermal dissipation is limited by package type and PCB design. The external heat-sink or system
cooling method should be adopted for maximum power output.

Total Harmonic Distortion + Noise vs. Output Power (BTL)


20
10 24V, 8Ω
Stereo
5

2
THD+N (%)

1
0.5
20Hz 1kHz
0.2
0.1
0.05
10kHz
0.02

0.01
1m 2m 5m 10m 20m 50m 100m 200m 500m 1 2 5 10 20 50 100
Output Power (W)

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 12/87
ESMT AD82584F
Total Harmonic Distortion + Noise vs. Output Power (BTL)
20
10 12V, 4Ω
Stereo
5

2
THD+N (%)

1
0.5
1kHz
20Hz
0.2
0.1
0.05
10kHz
0.02

0.01
1m 2m 5m 10m 20m 50m 100m 200m 500m 1 2 5 10 20 50 100
Output Power (W)

Total Harmonic Distortion + Noise vs. Output Power (BTL)


20
10 5V, 4Ω
Stereo
5

2
THD+N (%)

1
0.5 1kHz
20Hz
0.2
0.1
0.05
10kHz
0.02

0.01
1m 2m 5m 10m 20m 50m 100m 200m 500m 1 2 5 10 20 50 100
Output Power (W)

Total Harmonic Distortion + Noise vs. Frequency (BTL)


20
10
24V, 8Ω
5 Stereo
10W
2 5W
2.5W
THD+N (%)

1 1W
0.5 0.5W

0.2
0.1
0.05

0.02

0.01
20 50 100 200 500 1k 2k 5k 10k 20k
Frequency (Hz)

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 13/87
ESMT AD82584F
Total Harmonic Distortion + Noise vs. Frequency (BTL)
20
10
12V, 4Ω
5 Stereo
5W
2 2.5W
1W
THD+N (%)

1
0.5W
0.5

0.2
0.1
0.05

0.02

0.01
20 50 100 200 500 1k 2k 5k 10k 20k
Frequency (Hz)

Total Harmonic Distortion + Noise vs. Frequency (BTL)


20
10
7.4V, 4Ω
5 Stereo
2W
2 1W
0.5W
THD+N (%)

1
0.1W
0.5

0.2
0.1
0.05

0.02

0.01
20 50 100 200 500 1k 2k 5k 10k 20k
Frequency (Hz)

Total Harmonic Distortion + Noise vs. Frequency (BTL)


20
10
5V, 4Ω
5 Stereo
2W
2 1W
0.5W
THD+N (%)

1
0.1W
0.5

0.2
0.1
0.05

0.02

0.01
20 50 100 200 500 1k 2k 5k 10k 20k
Frequency (Hz)

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 14/87
ESMT AD82584F
Cross-talk (Stereo, BTL)
+0
24V, 8Ω
Stereo
-20
PO=1W

-40
Cross-talk (dB)

-60
R to Lch

-80
L to Rch

-100

- 120
20 50 100 200 500 1k 2k 5k 10k 20k
Frequency (Hz)

.
Frequency Response (BTL)
+1
24V, 8Ω +0.8
Stereo
PO=1W +0.6

+0.4

+0.2
Lch
dBr

+0

Rch -0.2

-0.4

-0.6

-0.8

-1
20 50 100 200 500 1k 2k 5k 10k 20k
Frequency (Hz)

Output Power vs. Supply Voltage (BTL, 8ohm)


35W

30W

25W
Output Power (W)

20W

15W

10W

5W
THD+N=10%
THD+N=1%
0W
4 6 8 10 12 14 16 18 20 22 24 26

Supply Voltage (V)

Note: Dashed Line represent thermally limited regions.

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 15/87
ESMT AD82584F
Output Power vs. Supply Voltage (BTL, 6ohm)
35W

30W

25W
Output Power (W)

20W

15W

10W

5W
THD+N=10%
THD+N=1%
0W
4 6 8 10 12 14 16 18 20 22 24 26

Supply Voltage (V)

Note: Dashed Line represent thermally limited regions.

Output Power vs. Supply Voltage (BTL, 4ohm)


35W

30W

25W
Output Power (W)

20W

15W

10W

5W
THD+N=10%
THD+N=1%
0W
4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

Supply Voltage (V)

Note: Dashed Line represent thermally limited regions.

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 16/87
ESMT AD82584F
Efficiency (Stereo, BTL) during Power Saving Mode

Stereo Efficiency with Power Saving Mode


100

90

80
24V
70
Efficiency(%)

18V
60 15V
12V
50
8V

40

8Ω Stereo
30

20
0 5 10 15 20 25 30 35 40 45 50
Total Output Power( W/2CH)

Efficiency (Stereo, BTL) without Power Saving Mode

Stereo Efficiency without Power Saving Mode


100

90

80
24V
70
Efficiency(%)

18V
60 15V
12V
50
8V
40

30 8Ω Stereo

20
0 5 10 15 20 25 30 35 40 45 50
Totaol Output Power (W/2CH)

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 17/87
ESMT AD82584F
Efficiency (Stereo, BTL) during Power Saving Mode

Stereo Efficiency with Power Saving Mode


100
90
80
70
60
Efficiency(%)

15V
50
12
40 7.4V
30 4.5V

20
4Ω Stereo
10
0
0 5 10 15 20 25 30 35 40 45 50

Total Output Power(W/2CH)

Efficiency (Stereo, BTL) without Power Saving Mode

Stereo Efficiency without Power Saving Mode


100
90
80
70
60
Efficiency(%)

15V
50
12
40 7.4V
30 4.5V

20
4Ω Stereo
10
0
0 5 10 15 20 25 30 35 40 45 50

Total Output Power(W/2CH)

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 18/87
ESMT AD82584F
Electrical Characteristics and Specifications for Loudspeaker (cont.)
 PBTL (Parallel-Bridge-Tied-Load) output for Mono
o
Condition: TA=25 C, DVDD= 3.3V, VDDL=VDDR=24V, FS=48kHz, Load=4 with passive LC lowpass filter
(L=10μ H with RDC=27mΩ , C=470nF); Input is 1kHz sinewave.

Symbol Parameter Condition Input Level Min Typ Max Units


RMS Output Power (THD+N=0.4%) 50 W
PO
RMS Output Power (THD+N=0.31%) 30 W
(Note 9)
RMS Output Power (THD+N=0.26%) 20 W
THD+N Total Harmonic Distortion + Noise Po=15W 0.22 %
Maximum
SNR Signal to Noise Ratio (Note 8) power at THD 102 dB
< 1% @1kHz
DR Dynamic Range (Note 8) -60dB 106 dB
Vn Output Noise (Note 8) 20Hz to 20kHz 130 uV
VRIPPLE=1VRMS
PSRR Power Supply Rejection Ratio -78 dB
at 1kHz
Note 8: Measured with A-weighting filter.
Note 9: Thermal dissipation is limited by package type and PCB design. The external heat-sink or system
cooling method should be adopted for maximum power output.

Total Harmonic Distortion + Noise vs. Output Power (PBTL)


20
10 24V, 4Ω
PBTL
5

2
THD+N (%)

1
0.5
1kHz
0.2 20Hz
0.1
0.05
10kHz
0.02

0.01
1m m 5m 10m 20m 50m 100m 200m 500m 1 2 5 10 20 50 100
Output Power (W)

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 19/87
ESMT AD82584F
Total Harmonic Distortion + Noise vs. Output Power (PBTL)
20
10 12V, 4Ω
PBTL
5

2
THD+N (%)

1
0.5

0.2 20Hz 1kHz

0.1
0.05

0.02 10kHz
0.01
1m m 5m 10m 20m 50m 100m 200m 500m 1 2 5 10 20 50 100
Output Power (W)

Total Harmonic Distortion + Noise vs. Frequency (PBTL)


20
10
24V, 4Ω
5 PBTL
10W
2 5W
2.5W
THD+N (%)

1 1W
0.5 0.5W

0.2
0.1
0.05

0.02

0.01
20 50 100 200 500 1k 2k 5k 10k 20k
Frequency (Hz)

Frequency Response (PBTL)


+1
24V, 4Ω +0.8
Mono
PO=1W +0.6

+0.4

+0.2
dBr

+0

-0.2

-0.4

-0.6

-0.8

-1
20 50 100 200 500 1k 2k 5k 10k 20k
Frequency (Hz)

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 20/87
ESMT AD82584F
Output Power vs. Supply Voltage (PBTL, 8ohm)
50W

40W
Output Power (W)

30W

20W

10W
THD+N=10%
THD+N=1%

0W
4 6 8 10 12 14 16 18 20 22 24 26
Supply Voltage (V)

Output Power vs. Supply Voltage (PBTL, 6ohm)


70W

60W

50W
Output Power (W)

40W

30W

20W

10W THD+N=10%
THD+N=1%

0W
4 6 8 10 12 14 16 18 20 22 24 26
Supply Voltage (V)

Note: Dashed Line represent thermally limited regions.

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 21/87
ESMT AD82584F
Output Power vs. Supply Voltage (PBTL, 4ohm)
70W

60W

50W
Output Power (W)

40W

30W

20W

10W THD+N=10%
THD+N=1%

0W
4 6 8 10 12 14 16 18 20 22 24 26
Supply Voltage (V)

Note: Dashed Line represent thermally limited regions.

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 22/87
ESMT AD82584F
Interface configuration
 I2S LRCIN Left Right

BCLK

SDATA MSB LSB MSB LSB

 Left-Alignment LRCIN Left Right

BCLK

SDATA MSB LSB MSB LSB

 Right-Alignment LRCIN Left Right

BCLK

SDATA MSB LSB MSB LSB

 System Clock Timing


t PERIOD
t LOW

BCLK t HIGH

Default setting,PLL is enable


t HIGH ≧ 162.7 ns , t LOW ≧ 162.7 ns , t PERIOD ≧ 325.4 ns
BCLK system

 Timing Relationship (Using I2S format as an example)

t LR

LRCIN Left Right


t BL t LB t BCH t BCL

BCLK

t BCC
SDATA MSB MSB

tDS tDH

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 23/87
ESMT AD82584F
Symbol Parameter Min Typ Max Units
tLR LRCIN Period (1/FS) 5.2 31.25 s
tBL BCLK Rising Edge to LRCIN Edge 25 ns
tLB LRCIN Edge to BCLK Rising Edge 25 ns
tBCC BCLK Period (1/64FS) 81.38 488.3 ns
tBCH BCLK Pulse Width High 40.69 244 ns
tBCL BCLK Pulse Width Low 40.69 244 ns
tDS SDATA Set-Up Time 25 ns
tDH SDATA Hold Time 25 ns

 I2C Timing

tf tr tSU;DAT tf tHD;STA tr tBUF


tLOW

tHD;STA tSU;STA tSU;STO


tHD;DAT tHIGH P S
S Sr

Standard Mode Fast Mode


Parameter Symbol Unit
MIN. MAX. MIN. MAX.
SCL clock frequency fSCL 0 100 0 400 kHz
Hold time for repeated START condition tHD,STA 4.0 --- 0.6 --- s
LOW period of the SCL clock tLOW 4.7 --- 1.3 --- s
HIGH period of the SCL clock tHIGH 4.0 --- 0.6 --- s
Setup time for repeated START condition tSU;STA 4.7 --- 0.6 --- s
2
Hold time for I C bus data tHD;DAT 0 3.45 0 0.9 s
2
Setup time for I C bus data tSU;DAT 250 --- 100 --- Ns
Rise time of both SDA and SCL signals tr --- 1000 --- 300 Ns
Fall time of both SDA and SCL signals tf --- 300 --- 300 Ns
Setup time for STOP condition tSU;STO 4.0 --- 0.6 --- s
Bus free time between STOP and the next
tBUF 4.7 --- 1.3 --- s
START condition
Capacitive load for each bus line Cb 400 400 pF

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 24/87
ESMT AD82584F
Operation Description
2
The default volume of AD82584F is muted. AD82584F will be activated while the de-mute command via I C is
programmed.

 Internal PLL
2
AD82584F has a built-in PLL internally, the BCLK/FS or MCLK/FS ratio, which is selected by I C control
interface. The clock inputted into the BCLK or MCLK pin becomes the frequency of multiple edge evaluation
in chip internally.

Multiple edge
BCLK/FS Setting PWM Career
Fs BCLK Frequency evaluation for bit
Ratio for PLL Frequency
clock
48kHz 64x 3.072MHz 32x 384kHz
44.1kHz 64x 2.8224MHz 32x 352.8kHz
32kHz 64x 2.048MHz 32x 256kHz

Multiple edge
MCLK/FS Setting PWM Career
Fs MCLK Frequency evaluation for
Ratio for PLL Frequency
Master clock
48kHz 256x 12.288MHz 8x 384kHz
44.1kHz 256x 11.2896MHz 8x 352.8kHz
32kHz 256x 8.192MHz 8x 256kHz
8kHz 256x 2.048MHz 32x 256kHz

 Reset
When the RESET pin is lowered, AD82584F will clear the stored data and reset the register table to
th
default values. AD82584F will exit reset state at the 512 internal clock cycle after the RESET pin is
raised to high.

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 25/87
ESMT AD82584F
 Power down control
AD82584F has a built-in volume fade-in/fade-out design for PD/Mute function. The relative PD timing
diagrams for loudspeakers are shown below.

Volume Level Volume Level


PD enabled PD disabled PD enabled
+24 dB +24 dB PD disabled
Original level Original level

-103 dB -103 dB
time time

Fade out Mute Fade in Fade out Fade in


time state time time time

t arg et ( dB ) original ( dB )
(10 20
 10 20
) x512 x (1 / 96 K )

The volume level will be decreased to -∞dB in several LRCIN cycles. Once the fade-out procedure is
finished, AD82584F will turn off the power stages, clock signals (for digital circuits) and current (for analog
circuits). After PD pin is pulled low, AD82584F requires Tfade to finish the forementioned work before entering
power down state. User can not program AD82584F during power down state. Also, all settings in the
registers will remain intact unless DVDD is removed.

If the PD signal is removed during the fade-out procedure (above, right figure), AD82584F will still execute
the fade-in procedure. In addition, AD82584F will establish the analog circuits’ bias current and send the
clock signals to digital circuits. Afterwards, AD82584F will return to its normal status.

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 26/87
ESMT AD82584F
 Self-protection circuits
AD82584F has built-in protection circuits including thermal, short-circuit, under-voltage detection, and over
voltage circuits.

(i) When the internal junction temperature is higher than 165℃, power stages will be turned off and
AD82584F will return to normal operation once the temperature drops to 130℃. The temperature values
may vary around 10%.

(ii) The short-circuit protection circuit protects the output stage when the wires connected to loudspeakers
are shorted to each other or GND/VDD. For normal 24V operations, the current flowing through the
power stage will be less than 9Afor stereo configuration. Otherwise, the short-circuit detectors may pull
the ERROR pin to DGND, disabling the output stages. When the over-temperature or short-circuit
condition occurs, the open-drain ERROR pin will be pulled low and latched into ERROR state.

Once short-circuit condition is removed, AD82584F will exit ERROR state when one of the following
conditions is met: (1) RESET pin is pulled low, (2) PD pin is pulled low, (3) Master mute is enabled
2
through the I C interface.

(iii) Once the DVDD voltage is lower than 2.89V, AD82584F will turn off its loudspeaker power stages. When
DVDD becomes higher than 2.99V, AD82584F will return to normal operation.

(iv) Once the PVDD voltage is higher than 29.2V, AD82584F will turn off its loudspeaker power stages.
When PVDD becomes lower than 28.5V, AD82584F will return to normal operation.

(v) Once the PVDD voltage is lower than 7.1V, AD82584F will turn off its loudspeaker power stages. When
PVDD becomes higher than 7.7V, AD82584F will return to normal operation.

 Anti-pop design
AD82584F will generate appropriate control signals to suppress pop sounds during initial power on/off,
power down/up, mute, and volume level changes.

 3D surround sound
AD82584F provides the virtual surround sound technology with greater separation and depth voice quality
for stereo signals.

 I2C Chip Select


ERROR is an input pin during power. It can be pulled High (15-kΩ pull up) or Low (15-kΩ pull down). Low
2
indicates an I C address of 0x30, and high an address of 0x31.

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 27/87
ESMT AD82584F
 Output configuration
The PBTL pin defines the configuration mode. AD82584F can be configured to stereo or mono via PBTL pin.

Table 1.
PBTL Configuration Mode
0 Stereo
1 Mono
2
Mono via I C control
X
(MONO_EN=1 and MONO_KEY=3006(HEX))

Configuration figures:

Half LA Half LA
Bridge L+ Bridge

Half Half SUB+


L-
Bridge LB Bridge LB

Half RA Half RA
Bridge R+ Bridge SUB-

Half Half
R-
Bridge RB Bridge RB

STEREO MONO

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 28/87
ESMT AD82584F
 Power on sequence
2
Hereunder is AD82584F’s power on sequence. Give a de-mute command via I C when the whole system is
stable.

Normal
Power-On PD=L Normal Operation
Operation

PVDD
t1 t8

DVDD
t2 t3 t11 t3

Note. BCLK should follow initial timing spec before I2C Active De-Mute command
Note. If always using BCLK as system clock, MCLK can be set low or floating.
MCLK/BCLK

LRCIN
SDATA

t4 t5 t12 t5

RESET

t6 t7

PD
t9 t15 t10

I2C FS setting/
SW I2C Active
Wait BCLK SEL/
Reset De-Mute
Others
t13 t14
LA, LB,
RA, RB

Symbol Condition Min Max Units


t1 0 - msec
t2 0 - msec
t3 10 - msec
t4 0 - msec
t5 10 - msec
t6 10 - msec
t7 0 - msec
t8 200 - msec
t9 20 - msec
t10 - 0.1 msec
t11 25 - msec
t12 25 - msec
22(FADE_SPEED=0)
t13 - msec
176(FADE_SPEED=1)

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 29/87
ESMT AD82584F
t14 - 20 msec
t15 20 msec

 Power off sequence


Hereunder is AD82584F’s power off sequence.

PVDD

DVDD

Note. If always using BCLK as system clock, MCLK can be set t4 t5


MCLK/BCLK low or floating.

LRCIN t3
SDATA

t2
/RESET

t1

/PD

Don’t care
I2C

LA, LB,
RA, RB

Symbol Condition Min Max Units


35(FADE_SPEED=0)
t1 - msec
280(FADE_SPEED=1)
t2 0.1 - msec
t3 0 - msec
t4 1 - msec
t5 1 - msec

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 30/87
ESMT AD82584F
I2C-Bus Transfer Protocol
 Introduction
2
AD82584F employs I C-bus transfer protocol. Two wires, serial data and serial clock carry information
between the devices connected to the bus. Each device is recognized by a unique 7-bit address and can
operate as either a transmitter or a receiver. The master device initiates a data transfer and provides the
2
serial clock on the bus. AD82584F is always an I C slave device.

 Protocol
 START and STOP condition
START is identified by a high to low transition of the SDA signal. A START condition must precede
any command for data transfer. A STOP is identified by a low to high transition of the SDA signal. A
STOP condition terminates communication between AD82584F and the master device on the bus. In
both START and STOP, the SCL is stable in the high state.

 Data validity
The SDA signal must be stable during the high period of the clock. The high or low change of SDA only
occurs when SCL signal is low. AD82584F samples the SDA signal at the rising edge of SCL signal.

 Device addressing
The master generates 7-bit address to recognize slave devices. When AD82584F receives 7-bit
address matched with 0110000 or 0110001 ( ERROR pin state during power up), AD82584F will
th th
acknowledge at the 9 bit (the 8 bit is for R/W bit). The bytes following the device identification
address are for AD82584F internal sub-addresses.

 Data transferring
Each byte of SDA signaling must consist of 8 consecutive bits, and the byte is followed by an
acknowledge bit. Data is transferred with MSB first, as shown in the figure below. In both write and
read operations, AD82584F supports both single-byte and multi-byte transfers. Refer to the figure
below for detailed data-transferring protocol.

START ACK ACK ACK STOP


Byte DEV_ADDR SUB_ADDR DATAIN
Write
R/W
START ACK ACK ACK ACK STOP
Multi-Byte DEV_ADDR SUB_ADDR DATAIN DATAIN
Write
R/W

NO
Random START ACK ACK ACK ACK STOP
Address DEV_ADDR SUB_ADDR DEV_ADDR DATAIN
Read
R/W START R/W
NO
Sequential START ACK ACK ACK ACK ACK ACK STOP
Random DEV_ADDR SUB_ADDR DEV_ADDR DATAIN DATAIN
Read
R/W START R/W

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 31/87
ESMT AD82584F
Register Table
The AD82584F’s audio signal processing data flow is shown below. User can control these functions by
programming appropriate settings in the register table. In this section, the register table is summarized first. The
definition of each register follows in the next section.

One band DRC

L
LRCIN ASRC PreScal M11 LCH
EQ1 EQ2 EQ14 EQ15
BCLK M12
I2S
SDATA M21
RCH
R EQ1 EQ2 EQ14 EQ15
ASRC PreScal M22

MCLK PLL

LA
LCH Surrround Volume DRC 1 Clipping1 HPFdc 2 FIR PostScal S/H2 SDM PWM
LB
Power
Stage
RA
RCH Surrround Volume DRC 1 Clipping1 HPFdc 2 FIR PostScal S/H2 SDM PWM
RB

Dual band DRC

L
LRCIN ASRC PreScal M11 LCH
EQ1 EQ2 EQ11 EQ12
BCLK M12
I2S
SDATA M21
EQ1 EQ2 EQ11 EQ12 RCH
R
ASRC PreScal M22

MCLK PLL

LA
LCH HPF Volume1 DRC 1 DRC 4 Clipping1 HPFdc PostScal 2 FIR S/H2 SDM PWM
LB
Power
Stage
RA
Clipping1 HPFdc PostScal 2 FIR S/H2 SDM PWM
RB

APF Volume5 DRC 3

RCH HPF Volume2 DRC 1 DRC 4

APF Volume6 DRC 3

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 32/87
ESMT AD82584F
Three bands DRC

L
LRCIN ASRC PreScal M11 LCH
EQ1 EQ2 EQ11 EQ12
BCLK M12
I2S
SDATA M21
RCH
R EQ1 EQ2 EQ11 EQ12
ASRC PreScal M22

MCLK PLL

LA
LCH HPF Volume 1 DRC 1 DRC 4 Clipping1 HPFdc 2 FIR PostScal S/H2 SDM PWM
LB
Power
Stage
RA
LPF Volume 3 DRC 2 Clipping1 HPFdc 2 FIR PostScal S/H2 SDM PWM
RB

APF Volume 5 DRC 3

RCH HPF Volume 2 DRC 1 DRC 4

LPF Volume 4 DRC 2

APF Volume 6 DRC 3

Address Name B[7] B[6] B[5] B[4] B[3] B[2] B[1] B[0]

0X00 SCTL1 IF[2] IF[1] IF[0] Reserved PWML_X PWMR_X LV_UVSEL LREXC

0X01 SCTL2 BCLK_SEL FS[1] FS[0] FS8K PMF[3] PMF[2] PMF[1] PMF[0]

0X02 SCTL3 EN_CLK_OUT MUTE CM1 CM2 CM3 CM4 CM5 CM6

0X03 MVOL MV[7] MV[6] MV[5] MV[4] MV[3] MV[2] MV[1] MV[0]

0X04 C1VOL C1V[7] C1V[6] C1V[5] C1V[4] C1V[3] C1V[2] C1V[1] C1V[0]

0X05 C2VOL C2V[7] C2V[6] C2V[5] C2V[4] C2V[3] C2V[2] C2V[1] C2V[0]

0X06 C3VOL C3V[7] C3V[6] C3V[5] C3V[4] C3V[3] C3V[2] C3V[1] C3V[0]

0X07 C4VOL C4V[7] C4V[6] C4V[5] C4V[4] C4V[3] C4V[2] C4V[1] C4V[0]

0X08 C5VOL C5V[7] C5V[6] C5V[5] C5V[4] C5V[3] C5V[2] C5V[1] C5V[0]

0X09 C6VOL C6V[7] C6V[6] C6V[5] C6V[4] C6V[3] C6V[2] C6V[1] C6V[0]

0X0A BTONE Reserved BTC[4] BTC[3] BTC[2] BTC[1] BTC[0]

0X0B TTONE Reserved TTC[4] TTC[3] TTC[2] TTC[1] TTC[0]

0X0C SCTL4 SRBP BTE DEQE NGE EQL PSL DSPB HPB

0X0D C1CFG Reserved C1PCBP C1DRCBP Reserved C1VBP

0X0E C2CFG Reserved C2PCBP C2DRCBP Reserved C2VBP

0X0F C3CFG Reserved C3DRCBP Reserved C3VBP

0X10 C4CFG Reserved C4DRCBP Reserved C4VBP

0X11 C5CFG Reserved C5DRCBP Reserved C5VBP

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 33/87
ESMT AD82584F
0X12 C6CFG Reserved C6DRCBP Reserved C6VBP

0X13 C7CFG Reserved C7DRCBP Reserved Reserved

0X14 C8CFG Reserved C8DRCBP Reserved Reserved

0X15 LAR1 LA1[3] LA1[2] LA1[1] LA1[0] LR1[3] LR1[2] LR1[1] LR1[0]

0X16 LAR2 LA2[3] LA2[2] LA2[1] LA2[0] LR2[3] LR2[2] LR2[1] LR2[0]

0X17 LAR3 LA3[3] LA3[2] LA3[1] LA3[0] LR3[3] LR3[2] LR3[1] LR3[0]

0X18 LAR4 LA4[3] LA4[2] LA4[1] LA4[0] LR4[3] LR4[2] LR4[1] LR4[0]

0X19 ERDLY Prohibited

0X1A SCTL5 Reserved MONO_EN SW_RSTB LVUV_FADE Reserved DIS_MCLK_DET QT_EN PWM_SEL

0X1B SCTL6 DIS_HVUV DRC_SEL[1] DRC_SEL[0] Reserved HV_UVSEL [2] HV_UVSEL [1] HV_UVSEL [0]

0X1C SCTL7 Reserved A_SEL_FAULT D_MOD DIS_NG_FADE QD_EN FADE_SPEED NG_GAIN[1] NG_GAIN[0]

0X1D CFADDR CFA[7] CFA[6] CFA[5] CFA[4] CFA[3] CFA[2] CFA[1] CFA[0]

0X1E A1CF1 C1B[23] C1B[22] C1B[21] C1B[20] C1B[19] C1B[18] C1B[17] C1B[16]

0X1F A1CF2 C1B[15] C1B[14] C1B[13] C1B[12] C1B[11] C1B[10] C1B[9] C1B[8]

0X20 A1CF3 C1B[7] C1B[6] C1B[5] C1B[4] C1B[3] C1B[2] C1B[1] C1B[0]

0X21 A2CF1 C2B[23] C2B[22] C2B[21] C2B[20] C2B[19] C2B[18] C2B[17] C2B[16]

0X22 A2CF2 C2B[15] C2B[14] C2B[13] C2B[12] C2B[11] C2B[10] C2B[9] C2B[8]

0X23 A2CF3 C2B[7] C2B[6] C2B[5] C2B[4] C2B[3] C2B[2] C2B[1] C2B[0]

0X24 B1CF1 C3B[23] C3B[22] C3B[21] C3B[20] C3B[19] C3B[18] C3B[17] C3B[16]

0X25 B1CF2 C3B[15] C3B[14] C3B[13] C3B[12] C3B[11] C3B[10] C3B[9] C3B[8]

0X26 B1CF3 C3B[7] C3B[6] C3B[5] C3B[4] C3B[3] C3B[2] C3B[1] C3B[0]

0X27 B2CF1 C4B[23] C4B[22] C4B[21] C4B[20] C4B[19] C4B[18] C4B[17] C4B[16]

0X28 B2CF2 C4B[15] C4B[14] C4B[13] C4B[12] C4B[11] C4B[10] C4B[9] C4B[8]

0X29 B2CF3 C4B[7] C4B[6] C4B[5] C4B[4] C4B[3] C4B[2] C4B[1] C4B[0]

0X2A A0CF1 C5B[23] C5B[22] C5B[21] C5B[20] C5B[19] C5B[18] C5B[17] C5B[16]

0X2B A0CF2 C5B[15] C5B[14] C5B[13] C5B[12] C5B[11] C5B[10] C5B[9] C5B[8]

0X2C A0CF3 C5B[7] C5B[6] C5B[5] C5B[4] C5B[3] C5B[2] C5B[1] C5B[0]

0X2D CFRW Reserved RBS R3 W3 RA R1 WA W1

0X2E PRS Prohibited

0X2F MBIST Prohibited

0X30 Reserved Reserved

0X31 PWM_CTRL Prohibited

0X32 TM_CTRL Prohibited

0X33 QT_SW_LEVEL SW_LEVEL [2] SW_LEVEL [1] SW_LEVEL [0] QT_SW_LEVEL [4] QT_SW_LEVEL [3] QT_SW_LEVEL [2] QT_SW_LEVEL [1] QT_SW_LEVEL [0]

0X34 VFT1 MV_FT[1] MV_FT[0] C1V_FT[1] C1V_FT[0] C2V_FT[1] C2V_FT[0] C3V_FT[1] C3V_FT[0]

0X35 VFT2 C4V_FT[1] C4V_FT[0] C5V_FT[1] C5V_FT[0] C6V_FT[1] C6V_FT[0] Reserved

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 34/87
ESMT AD82584F
0X36 OCB_GVDDS Prohibited

0X37 ID DN[3] DN[2] DN[1] DN[0] VN[3] VN[2] VN[1] VN[0]

0X38 R1ADDR Prohibited

0X39 R1D1 Prohibited

0X3A R1D2 Prohibited

0X3B R1D3 Prohibited

0X3C R1RW Prohibited

0X3D R2ADDR Prohibited

0X3E R2D1 Prohibited

0X3F R2D2 Prohibited

0X40 R2D3 Prohibited

0X41 R2RW Prohibited

0X42 LMC C1_CLR C2_CLR C3_CLR C4_CLR C5_CLR C6_CLR C7_CLR C8_CLR

0X43 PMC C1_CLR_RMS C2_CLR_RMS C3_CLR_RMS C4_CLR_RMS C5_CLR_RMS C6_CLR_RMS C7_CLR_RMS C8_CLR_RMS

0X44 TC1LM C1_LEVEL[23] C1_LEVEL[22] C1_LEVEL[21] C1_LEVEL[20] C1_LEVEL[19] C1_LEVEL[18] C1_LEVEL[17] C1_LEVEL[16]

0X45 MC1LM C1_LEVEL[15] C1_LEVEL[14] C1_LEVEL[13] C1_LEVEL[12] C1_LEVEL[11] C1_LEVEL[10] C1_LEVEL[9] C1_LEVEL[8]

0X46 BC1LM C1_LEVEL[7] C1_LEVEL[6] C1_LEVEL[5] C1_LEVEL[4] C1_LEVEL[3] C1_LEVEL[2] C1_LEVEL[1] C1_LEVEL[0]

0X47 TC2LM C2_LEVEL[23] C2_LEVEL[22] C2_LEVEL[21] C2_LEVEL[20] C2_LEVEL[19] C2_LEVEL[18] C2_LEVEL[17] C2_LEVEL[16]

0X48 MC2LM C2_LEVEL[15] C2_LEVEL[14] C2_LEVEL[13] C2_LEVEL[12] C2_LEVEL[11] C2_LEVEL[10] C2_LEVEL[9] C2_LEVEL[8]

0X49 BC2LM C2_LEVEL[7] C2_LEVEL[6] C2_LEVEL[5] C2_LEVEL[4] C2_LEVEL[3] C2_LEVEL[2] C2_LEVEL[1] C2_LEVEL[0]

0X4A TC3LM C3_LEVEL[23] C3_LEVEL[22] C3_LEVEL[21] C3_LEVEL[20] C3_LEVEL[19] C3_LEVEL[18] C3_LEVEL[17] C3_LEVEL[16]

0X4B MC3LM C3_LEVEL[15] C3_LEVEL[14] C3_LEVEL[13] C3_LEVEL[12] C3_LEVEL[11] C3_LEVEL[10] C3_LEVEL[9] C3_LEVEL[8]

0X4C BC3LM C3_LEVEL[7] C3_LEVEL[6] C3_LEVEL[5] C3_LEVEL[4] C3_LEVEL[3] C3_LEVEL[2] C3_LEVEL[1] C3_LEVEL[0]

0X4D TC4LM C4_LEVEL[23] C4_LEVEL[22] C4_LEVEL[21] C4_LEVEL[20] C4_LEVEL[19] C4_LEVEL[18] C4_LEVEL[17] C4_LEVEL[16]

0X4E MC4LM C4_LEVEL[15] C4_LEVEL[14] C4_LEVEL[13] C4_LEVEL[12] C4_LEVEL[11] C4_LEVEL[10] C4_LEVEL[9] C4_LEVEL[8]

0X4F BC4LM C4_LEVEL[7] C4_LEVEL[6] C4_LEVEL[5] C4_LEVEL[4] C4_LEVEL[3] C4_LEVEL[2] C4_LEVEL[1] C4_LEVEL[0]

0X50 TC5LM C5_LEVEL[23] C5_LEVEL[22] C5_LEVEL[21] C5_LEVEL[20] C5_LEVEL[19] C5_LEVEL[18] C5_LEVEL[17] C5_LEVEL[16]

0X51 MC5LM C5_LEVEL[15] C5_LEVEL[14] C5_LEVEL[13] C5_LEVEL[12] C5_LEVEL[11] C5_LEVEL[10] C5_LEVEL[9] C5_LEVEL[8]

0X52 BC5LM C5_LEVEL[7] C5_LEVEL[6] C5_LEVEL[5] C5_LEVEL[4] C5_LEVEL[3] C5_LEVEL[2] C5_LEVEL[1] C5_LEVEL[0]

0X53 TC6LM C6_LEVEL[23] C6_LEVEL[22] C6_LEVEL[21] C6_LEVEL[20] C6_LEVEL[19] C6_LEVEL[18] C6_LEVEL[17] C6_LEVEL[16]

0X54 MC6LM C6_LEVEL[15] C6_LEVEL[14] C6_LEVEL[13] C6_LEVEL[12] C6_LEVEL[11] C6_LEVEL[10] C6_LEVEL[9] C6_LEVEL[8]

0X55 BC6LM C6_LEVEL[7] C6_LEVEL[6] C6_LEVEL[5] C6_LEVEL[4] C6_LEVEL[3] C6_LEVEL[2] C6_LEVEL[1] C6_LEVEL[0]

0X56 TC7LM C7_LEVEL[23] C7_LEVEL[22] C7_LEVEL[21] C7_LEVEL[20] C7_LEVEL[19] C7_LEVEL[18] C7_LEVEL[17] C7_LEVEL[16]

0X57 MC7LM C7_LEVEL[15] C7_LEVEL[14] C7_LEVEL[13] C7_LEVEL[12] C7_LEVEL[11] C7_LEVEL[10] C7_LEVEL[9] C7_LEVEL[8]

0X58 BC7LM C7_LEVEL[7] C7_LEVEL[6] C7_LEVEL[5] C7_LEVEL[4] C7_LEVEL[3] C7_LEVEL[2] C7_LEVEL[1] C7_LEVEL[0]

0X59 TC8LM C8_LEVEL[23] C8_LEVEL[22] C8_LEVEL[21] C8_LEVEL[20] C8_LEVEL[19] C8_LEVEL[18] C8_LEVEL[17] C8_LEVEL[16]

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 35/87
ESMT AD82584F
0X5A MC8LM C8_LEVEL[15] C8_LEVEL[14] C8_LEVEL[13] C8_LEVEL[12] C8_LEVEL[11] C8_LEVEL[10] C8_LEVEL[9] C8_LEVEL[8]

0X5B BC8LM C8_LEVEL[7] C8_LEVEL[6] C8_LEVEL[5] C8_LEVEL[4] C8_LEVEL[3] C8_LEVEL[2] C8_LEVEL[1] C8_LEVEL[0]

0X5C I2S_OUT Reserved I2S_DO_SEL[2] I2S_DO_SEL[2] I2S_DO_SEL[2]

0X5D~
Reserved Reserved
0X73

0X74 MKHB MK_HBYTE[7] MK_HBYTE[6] MK_HBYTE[5] MK_HBYTE[4] MK_HBYTE[3] MK_HBYTE[2] MK_HBYTE[1] MK_HBYTE[0]

0X75 MKLB MK_LBYTE[7] MK_LBYTE[6] MK_LBYTE[5] MK_LBYTE[4] MK_LBYTE[3] MK_LBYTE[2] MK_LBYTE[1] MK_LBYTE[0]

0X76 BS_CTRL Prohibited

0X77 HI_RES Prohibited

0X78 TMR Prohibited

0X79 BS_OV_UV_SEL Prohibited

0X7A OC_SEL Prohibited

0X7B MBIST_UPT_E Prohibited

0X7C MBIST_UPM_E Prohibited

0X7D MBIST_UPB_E Prohibited

0X7E MBIST_UPT_O Prohibited

0X7F MBIST_UPM_O Prohibited

0X80 MBIST_UPB_O Prohibited

0X81 Reserved Reserved

0X82 MDT Prohibited

0X83 PWM SHIFT Reserved

0X84 ERR_REG A_OCP_N A_OTP_N A_UV_N A_BSUV A_BSOV A_CKERR A_OVP Reserved

0X85 ERR_RECORD A_OCP_N_LATCH A_OTP_N__LATCH A_UV_N__LATCH A_BSUV_LATCH A_BSOV__LATCH A_CKERR__LATCH A_OVP_LATCH Reserved

0X86 ERR_CLEAR A_OCP_N_CLEAR A_OTP_N_CLEAR A_UV_N_CLEAR A_BSUV_CLEAR A_BSOV_CLEAR A_CKERR_CLEAR A_OVP_CLEAR Reserved

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 36/87
ESMT AD82584F
Detail Description for Register
Note that the highlighted columns are default values of these tables. If there is no highlighted value, the default
setting of this bit is determined by the external pin.

 Address 0X00 : State control 1


2
AD82584F supports multiple serial data input formats including I S, Left-alignment and Right-alignment.
These formats are selected by user via bit7~bit5 of address 0X00. The left/right channels can be exchanged
to each other by programming to address 0/bit0, LREXC.

BIT NAME DESCRIPTION VALUE FUNCTION


2
000 I S 16-24 bits
001 Left-alignment 16-24 bits
010 Right-alignment 16 bits
B[7:5] IF[2:0] Input Format
011 Right-alignment 18 bits
100 Right-alignment 20 bits
101 Right-alignment 24 bits
B[4] Reserved
0 No exchanged
B[3] PWML_X LA/LB exchange
1 L/R exchanged
0 L/R exchanged
B[2] PWMR_X RA/RB exchange
1 No exchanged
LV under voltage 0 2.9V
B[1] LV_UVSEL
selection 1 2.7V
Left/Right (L/R) 0 No exchanged
B[0] LREXC
Channel exchanged 1 L/R exchanged

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 37/87
ESMT AD82584F
 Address 0X01 : State control 2
AD82584F has a built-in PLL and supports multiple MCLK/Fs or BCLK/Fs ratios.
If BCLK_SEL is high, the ratio is changed to BCLK/FS ratios.
On the contrary, the ratio is changed to MCLK/FS ratios.
AD82584F has 8K sample rate application via bit 4.
Detail setting is shown in the following table.

BIT NAME DESCRIPTION VALUE FUNCTION


MCLK-less 0 Disable
B[7] BCLK_SEL
(BCLK system) 1 Enable
00 32/44.1/48kHz
B[6:5] FS[1:0] Sampling Frequency 01 64/88.2/96kHz
1x 128/176.4/192kHz
0 Disable
B[4] FS8K 8K sample rate
1 Enable

Note that: 8K application needs MCLK pin. Therefore, E-LQFP-48 and E-TSSOP-28 package can support this
function.

Multiple MCLK/FS in MCLK system or BCLK/FS in BCLK system ratio setting table

BIT NAME DESCRIPTION VALUE B[6:5]=00 B[6:5]=01 B[6:5]=1x


0000 1024x 512x 256x
Reset Default Reset Default Reset Default
0001
(64x) (64x) (64x)
0010 128x 128x 128x
MCLK/Fs or 0011 192x 192x 192x
B[3:0] PMF[3:0] BCLK/Fs 0100 256x 256x 256x
Setup 0101 384x 384x
0110 512x 512x
0111 576x Reserved
1000 768x Reserved
1001 1024x

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 38/87
ESMT AD82584F
Multiple MCLK/FS ratio setting table of 8K application

BIT NAME DESCRIPTION VALUE B[4]=1


0000 4096x
Reset Default
0001
(256x)
0010 512x
0011 768x
B[3:0] PMF[3:0] MCLK/Fs Setup 0100 1024x
0101 1536x
0110 2048x
0111 2304x
1000 3072x
1001 4096x

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 39/87
ESMT AD82584F
 Address 0X02 : State control 3
AD82584F has mute function including master mute and channel mute.
In one band DRC, master, channel 1, and channel 2 mute will active.
When master mute is enabled, all 2 processing channels are muted. User can mute these 2 channels
individually by channel mute. When the mute function is enabled or disabled, the fade-out or fade-in process
will be initiated.

In three bands DRC, master, channel 1 to channel 6 mute will active.


When master mute is enabled, all 6 processing channels are muted. User can mute these 6 channels
individually by channel mute. When the mute function is enabled or disabled, the fade-out or fade-in process
will be initiated.

BIT NAME DESCRIPTION VALUE FUNCTION


EN_CLK_ 0 Disabled
B[7] PLL Clock Output
OUT 1 Enabled
0 All channel not muted
B[6] MMUTE Master Mute
1 All channel muted
0 Ch1 not muted
B[5] CM1 Channel 1 Mute
1 Only Ch1 muted
0 Ch2 not muted
B[4] CM2 Channel 2 Mute
1 Only Ch2 muted
0 Ch3 not muted
B[3] CM3 Channel 3 Mute
1 Only Ch3 muted
0 Ch4 not muted
B[2] CM4 Channel 4 Mute
1 Only Ch4 muted
0 Ch5 not muted
B[1] CM5 Channel 5 Mute
1 Only Ch5 muted
0 Ch6 not muted
B[0] CM6 Channel 6 Mute
1 Only Ch6 muted

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 40/87
ESMT AD82584F
 Address 0X03 : Master volume control
AD82584F supports both master-volume (Address 0X03) and channel-volume control (Address 0X04, 0X05,
0X06, 0X07, 0X08, 0X09) modes. Both volume control settings range from +12dB ~ -103dB and 0.5dB per
step. Note that the master volume control is added to the individual channel volume control as the total
volume control. For example, if the master volume level is set at, Level A (in dB unit) and the channel volume
level is set at Level B (in dB unit), the total volume control setting is equal to Level A plus with Level B.

-103dB ≦ Total volume ( Level A + Level B ) ≦ +24dB.

BIT NAME DESCRIPTION VALUE FUNCTION


00000000 +12.0dB
00000001 +11.5dB
00000010 +11.0dB
︰ ︰
00010111 +0.5dB
00011000 0.0dB
BIT[7:0] MV[7:0] Master Volume
00011001 -0.5dB
︰ ︰
11100110 -103.0dB
11100111 -∞dB
︰ ︰
11111111 -∞dB

 Address 0X04 : Channel 1 volume

BIT NAME DESCRIPTION VALUE FUNCTION


00000000 +12.0dB
00000001 +11.5dB
︰ ︰
00010100 +2dB
︰ ︰
00011000 0.0dB
BIT[7:0] C1V[7:0] Channel1 Volume
00011001 -0.5dB
︰ ︰
11100110 -103.0dB
11100111 -∞dB
︰ ︰
11111111 -∞dB

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 41/87
ESMT AD82584F
 Address 0X05 : Channel 2 volume

BIT NAME DESCRIPTION VALUE FUNCTION


00000000 +12.0dB
00000001 +11.5dB
︰ ︰
00010100 +2dB
︰ ︰
00011000 0.0dB
BIT[7:0] C2V[7:0] Channel2 Volume
00011001 -0.5dB
︰ ︰
11100110 -103.0dB
11100111 -∞dB
︰ ︰
11111111 -∞dB

 Address 0X06 : Channel 3 volume

BIT NAME DESCRIPTION VALUE FUNCTION


00000000 +12.0dB
00000001 +11.5dB
︰ ︰
00010100 +2dB
︰ ︰
00011000 0.0dB
BIT[7:0] C3V[7:0] Channel3 Volume
00011001 -0.5dB
︰ ︰
11100110 -103.0dB
11100111 -∞dB
︰ ︰
11111111 -∞dB

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 42/87
ESMT AD82584F
 Address 0X07 : Channel 4 volume

BIT NAME DESCRIPTION VALUE FUNCTION


00000000 +12.0dB
00000001 +11.5dB
︰ ︰
00010100 +2dB
︰ ︰
00011000 0.0dB
BIT[7:0] C4V[7:0] Channel 4 Volume
00011001 -0.5dB
︰ ︰
11100110 -103.0dB
11100111 -∞dB
︰ ︰
11111111 -∞dB

 Address 0X08 : Channel 5 volume

BIT NAME DESCRIPTION VALUE FUNCTION


00000000 +12.0dB
00000001 +11.5dB
︰ ︰
00010100 +2dB
︰ ︰
00011000 0.0dB
BIT[7:0] C5V[7:0] Channel 5 Volume
00011001 -0.5dB
︰ ︰
11100110 -103.0dB
11100111 -∞dB
︰ ︰
11111111 -∞dB

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 43/87
ESMT AD82584F
 Address 0X09 : Channel 6 volume

BIT NAME DESCRIPTION VALUE FUNCTION


00000000 +12.0dB
00000001 +11.5dB
︰ ︰
00010100 +2dB
︰ ︰
00011000 0.0dB
BIT[7:0] C6V[7:0] Channel 6 Volume
00011001 -0.5dB
︰ ︰
11100110 -103.0dB
11100111 -∞dB
︰ ︰
11111111 -∞dB

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 44/87
ESMT AD82584F
 Address 0X0A/0X0B : Bass/Treble tone boost and cut
EQ11 and EQ12 can be programmed as bass/treble tone boost and cut. When, register with address-0X0C,
bit-6, BTE is set to high, the EQ-11 and EQ-12 will perform as bass and treble respectively. The -3dB corner
frequency of bass is 360Hz, and treble is 7kHz. The gain range for both filters is +12db ~ -12dB with 1dB per
step.

BIT NAME DESCRIPTION VALUE FUNCTION


B[7:5] Reserved
00000 +12dB
… …
00100 +12dB
00101 +11dB
00110 +10dB
… …
01110 +2dB

BTC[4:0] The gain setting 01111 +1dB


B[4:0] / of 10000 0dB
TTC[4:0] boost and cut 10001 -1dB
10010 -2dB
… …
11010 -10dB
11011 -11dB
11100 -12dB
… …

11111 -12dB

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 45/87
ESMT AD82584F
 Address 0X0C : State control 4
The AD82584F provides several DSP setting as following.

BIT NAME DESCRIPTION VALUE FUNCTION


0 Surround enable
B[7] SRBP Surround bypass
1 Surround bypass
Bass/Treble Selection 0 Bass/Treble Disable
B[6] BTE
bypass 1 Bass/Treble Enable
0 DEQ Disable
B[5] DEQE Dynamic EQ enable
1 DEQ enable
0 Noise gate disable
B[4] NGE Noise gate enable
1 Noise gate enable
0 Each channel uses individual EQ
B[3] EQL EQ Link
1 Channel-2 uses channel-1 EQ
Each channel uses individual
0
B[2] PSL Post-scale link post-scale
1 Use channel-1 post-scale
0 EQ enable
B[1] DSPB EQ bypass
1 EQ bypass
DC blocking HPF 0 HPF dc enable
B[0] HPB
bypass 1 HPF dc bypass

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 46/87
ESMT AD82584F
 Address 0X0D, 0X0E ,0X0F,0X10,0X11,0X12, 0X13,0X14 : Channel configuration
registers
AD82584F can configure each channel to enable or bypass DRC and channel volume and select the limiter
set.

Address 0X0D and 0X0E; where x=1 or 2


BIT NAME DESCRIPTION VALUE FUNCTION
B[7:4] Reserved
Channel x Power 0 Channel x PC enable
B[3] CxPCBP
Clipping bypass 1 Channel x PC bypass
0 Channel x DRC enable
B[2] CxDRCBP Channel x DRC bypass
1 Channel x DRC bypass
B[1] Reserved
Channel x Volume 0 Channel x’s master volume operation
B[0] CxVBP
bypass 1 Channel x’s master volume bypass

Address 0X0F, 0X10, 0X11, and 0X12; where x=3, 4, 5, 6

BIT NAME DESCRIPTION VALUE FUNCTION


B[7:3] Reserved
0 Channel x DRC enable
B[2] CxDRCBP Channel x DRC bypass
1 Channel x DRC bypass
B[1] Reserved
Channel x Volume 0 Channel x volume operation
B[0] CxVBP
bypass 1 Channel x volume bypass

Address 0X13, and 0X14; where x=7 or 8


C7DRCBP/C8DRCBP use to control L/R post DRC.
The gains are internally setting and they can’t be changed via I2C control.

BIT NAME DESCRIPTION VALUE FUNCTION


B[7:3] Reserved
0 Channel x DRC enable
B[2] CxDRCBP Channel x DRC bypass
1 Channel x DRC bypass
B[1:0] Reserved

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 47/87
ESMT AD82584F
 Address 0X15, 0X16, 0X17, 0X18 : DRC limiter attack/release rate
The AD82584F has 4 independent DRC set, each DRC has its own attack/release rate.

Address 0X15, 0X16, 0X17, and 0X18; where x=1, 2, 3, 4


BIT NAME DESCRIPTION VALUE FUNCTION
0000 3 dB/ms
0001 2.667 dB/ms
0010 2.182 dB/ms
0011 1.846 dB/ms
0100 1.333 dB/ms
0101 0.889 dB/ms
0110 0.4528 dB/ms
0111 0.2264 dB/ms
B[7:5] LAx[3:0] DRC attack rate
1000 0.15 dB/ms
1001 0.1121 dB/ms
1010 0.0902 dB/ms
1011 0.0752 dB/ms
1100 0.0645 dB/ms
1101 0.0563 dB/ms
1110 0.0501 dB/ms
1111 0.0451 dB/ms
0000 0.5106 dB/ms
0001 0.1371 dB/ms
0010 0.0743 dB/ms
0011 0.0499 dB/ms
0100 0.0360 dB/ms
0101 0.0299 dB/ms
0110 0.0264 dB/ms
0111 0.0208 dB/ms
B[3:0] LRx[3:0] DRC release rate
1000 0.0198 dB/ms
1001 0.0172 dB/ms
1010 0.0147 dB/ms
1011 0.0137 dB/ms
1100 0.0134 dB/ms
1101 0.0117 dB/ms
1110 0.0112 dB/ms
1111 0.0104 dB/ms

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 48/87
ESMT AD82584F
 Address 0X1A : State control 5

BIT NAME DESCRIPTION VALUE FUNCTION


B[7] Reserved
0 Stereo
B[6] MONO_EN MONO enable register MONO_EN=1 and MONO_KEY=3006(hex )
1
Output will become mono
0 Reset
B[5] SW_RSTB Software reset
1 Normal operation
Low Under Voltage 0 No Fade
B[4] LVUV_FADE
Fade 1 Fade
B[3] Reserved
Disable MCLK detect 0 Enable MCLK detect circuit
B[2] DIS_MCLK_DET
circuit 1 Disable MCLK detect circuit
0 Disable
B[1] QT_EN Power saving mode
1 Enable
0 Qua-ternary
B[0] PWM_SEL PWM modulation
1 Ternary

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 49/87
ESMT AD82584F
 Address 0X1B : State control 6
AD82584F can disable HV under voltage detection via bit 7.
AD82584F support multi-level HV under voltage detection via bit2~ bit0, using this function, AD82584F will
fade out signal to avoid pop sounds if high voltage supply disappear before low voltage supply.
AD82584F can support one band, two band, and three band DRC selection via bit6~bit5.

BIT NAME DESCRIPTION VALUE FUNCTION


Disable HV under 0 Enable
B[7] DIS_HVUV
voltage selection 1 Disable
00 One band DRC
B[6:5] DRC_SEL DRC mode selection 01 Two band DRC
1X Three band DRC
B[4:3] Reserved
000 4V
001 7.2V
010 9.7 V
B[3:0] HV_UV SEL UV detection level 011 13.2V
100 15.5 V
101 19.5 V
Others 7.2V

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 50/87
ESMT AD82584F
 Address 0X1C: State control 7
2
The ERROR pin of AD82584F is a dual function pin. It is treated as a I C device address selection input
when B[6] is set as low. It will become as an ERROR output pin when B[6] is set as high.

AD82584F can turn on delta quaternary modulation via bit 5.


AD82584F provide 2 kind of fade in/out speed via bit 2. One is 1.25ms from mute to 0dB. The other one is
10ms from mute to 0dB.

AD82584F provide noise gate function if receiving 2048 signal sample points smaller than noise gate attack
level. User can change noise gate gain via bit1~ bit0. When noise gate function occurs, input signal will
multiply noise gate gain (x1/8, x1/4 x1/2, x0). User can select fade out or not via bit 4.

BIT NAME DESCRIPTION VALUE FUNCTION


B[7] X Reserved
I2C device address
I2C address selection 0
B[6] A_SEL_FAULT selection
or ERROR output
1 ERROR output
Delta quaternary 0 Disable
B[5] D_MOD
modulation 1 enable
0 Fade
B[4] DIS_NG_FADE Disable noise gate fade
1 No fade
Quaternary and delta 0 Disable
B[3] QD_EN
quaternary switching 1 enable
Fade in/out speed 0 1.25ms
B[2] FADE_SPEED
selection 1 10ms
00 x1/8
01 x1/4
B[1:0] NG_GAIN[1:0] Noise gate gain
10 x1/2
11 Mute

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 51/87
ESMT AD82584F
 Address 0X1D ~0X2D : User-defined coefficients registers
An on-chip RAM in AD82584F stores user-defined EQ, mixing, pre-scale, post-scale coefficients…etc. The
content of this coefficient RAM is indirectly accessed via coefficient registers, which consist of one base
address register (address 0X1D), five sets of registers (address 0X1E to 0X2C) of three consecutive 8-bit
entries for each 24-bit coefficient, and one control register (address 0X2D) to control access of the
coefficients in the RAM..

Address 0X1D
BIT NAME DESCRIPTION VALUE FUNCTION
Coefficient RAM base
B[7:0] CFA[7:0] 00000000
address

Address 0X1E, A1cf1


BIT NAME DESCRIPTION VALUE FUNCTION
Top 8-bits of
B[7:0] C1B[23:16]
coefficients A1

Address 0X1F, A1cf2


BIT NAME DESCRIPTION VALUE FUNCTION
Middle 8-bits of
B[7:0] C1B[15:8]
coefficients A1

Address 0X20, A1cf3


BIT NAME DESCRIPTION VALUE FUNCTION
Bottom 8-bits of
B[7:0] C1B[7:0]
coefficients A1

Address 0X21, A2cf1


BIT NAME DESCRIPTION VALUE FUNCTION
Top 8-bits of
B[7:0] C2B[23:16]
coefficients A2

Address 0X22, A2cf2


BIT NAME DESCRIPTION VALUE FUNCTION
Middle 8-bits of
B[7:0] C2B[15:8]
coefficients A2

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 52/87
ESMT AD82584F
Address 0X23, A2cf3
BIT NAME DESCRIPTION VALUE FUNCTION
Bottom 8-bits of
B[7:0] C2B[7:0]
coefficients A2

Address 0X24, B1cf1


BIT NAME DESCRIPTION VALUE FUNCTION
Top 8-bits of
B[7:0] C3B[23:16]
coefficients B1

Address 0X25, B1cf2


BIT NAME DESCRIPTION VALUE FUNCTION
Middle 8-bits of
B[7:0] C3B[15:8]
coefficients B1

Address 0X26, B1cf3


BIT NAME DESCRIPTION VALUE FUNCTION
Bottom 8-bits of
B[7:0] C3B[7:0]
coefficients B1

Address 0X27, B2cf1


BIT NAME DESCRIPTION VALUE FUNCTION
Top 8-bits of
B[7:0] C4B[23:16]
coefficients B2

Address 0X28, B2cf2


BIT NAME DESCRIPTION VALUE FUNCTION
Middle 8-bits of
B[7:0] C4B[15:8]
coefficients B2

Address 0X29, B2cf3


BIT NAME DESCRIPTION VALUE FUNCTION
Bottom 8-bits of
B[7:0] C4B[7:0]
coefficients B2

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 53/87
ESMT AD82584F
Address 0X2A, A0cf1
BIT NAME DESCRIPTION VALUE FUNCTION
Top 8-bits of
B[7:0] C5B[23:16]
coefficients A0

Address 0X2B, A0cf2


BIT NAME DESCRIPTION VALUE FUNCTION
Middle 8-bits of
B[7:0] C5B[15:8]
coefficients A0

Address 0X2C, A0cf3


BIT NAME DESCRIPTION VALUE FUNCTION
Bottom 8-bits of
B[7:0] C5B[7:0]
coefficients A0

Address 0X2D, CfRW

BIT NAME DESCRIPTION VALUE FUNCTION


B[7] Reserved
0 Select RAM bank 0
B[6] RBS RAM bank selection
1 Select RAM bank 1
Enable of reading three 0 Read complete
B[5] R3
coefficients from RAM 1 Read enable
Enable of writing three 0 Write complete
B[4] W3
coefficients to RAM 1 Write enable
Enable of reading a set of 0 Read complete
B[3] RA
coefficients from RAM 1 Read enable
Enable of reading a single 0 Read complete
B[2] R1
coefficients from RAM 1 Read enable
Enable of writing a set of 0 Write complete
B[1] WA
coefficients to RAM 1 Write enable
Enable of writing a single 0 Write complete
B[0] W1
coefficient to RAM 1 Write enable

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 54/87
ESMT AD82584F
 Address 0X33 : Power saving mode switching level
If the PWM exceeds the programmed switching power level (default 26*40ns), the modulation algorithm will
change from default modulation scheme into power saving mode scheme. It results in higher power
efficiency during larger power output operations. If the PWM drops below the programmed switching power
level - programmed switching window (default (26-5)*40ns), the modulation algorithm will change back to
default modulation scheme.
Switching scheme is related to QT_EN (address0X1A, B[1]), D_MOD(address0X1C, B[5]), and
QD_EN(address0X1C, B[3]).
AD82584F has three type switching schemes and they share the same switching scheme.
One time will only have one switching scheme.
Case1: QT_EN=1, D_MOD=0, QD_EN=0. The default modulation scheme is quaternary and power saving
mode scheme is ternary.
Case2: QT_EN=1, D_MOD=1, QD_EN=0. The default modulation scheme is delta quaternary and power
saving mode scheme is ternary.
Case3: QT_EN=0, D_MOD=0, QD_EN=1. The default modulation scheme is quaternary and power saving
mode scheme is delta quaternary.

BIT NAME DESCRIPTION VALUE FUNCTION


000 2
001 3
010 4
Power saving mode 011 5
B[7:5] SW_WINDOW
switching window 100 6
101 7
110 8
111 9
00000 4
00001 4
: :
01101 26
Power saving mode 01110 28
B[4:0] QT_SW_LEVEL
switching level 01111 30
10000 32
: :
11110 60
11111 62

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 55/87
ESMT AD82584F
 Address 0X34/0X35: Volume fine tune
AD82584F supports both master-volume fine tune and channel-volume control fine tune modes. Both
volume control settings range from 0dB ~ -0.375dB and 0.125dB per step. Note that the master volume fine
tune is added to the individual channel volume fine tune as the total volume fine tune.

Address 0X34

BIT NAME DESCRIPTION VALUE FUNCTION


00 0dB
Master Volume Fine 01 -0.125dB
B[7:6] MV_FT
Tune 10 -0.25dB
11 -0.375dB
00 0dB
Channel 1 Volume Fine 01 -0.125dB
B[5:4] C1V_FT
Tune 10 -0.25dB
11 -0.375dB
00 0dB
Channel 2 Volume Fine 01 -0.125dB
B[3:2] C2V_FT
Tune 10 -0.25dB
11 -0.375dB
00 0dB
Channel 3 Volume Fine 01 -0.125dB
B[1:0] C3V_FT
Tune 10 -0.25dB
11 -0.375dB

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 56/87
ESMT AD82584F
Address 0X35

BIT NAME DESCRIPTION VALUE FUNCTION


00 0dB
Channel 4 Volume Fine 01 -0.125dB
B[7:6] C4V_FT
Tune 10 -0.25dB
11 -0.375dB
00 0dB
Channel 5 Volume Fine 01 -0.125dB
B[5:4] C5V_FT
Tune 10 -0.25dB
11 -0.375dB
00 0dB
Channel 6 Volume Fine 01 -0.125dB
B[3:2] C6V_FT
Tune 10 -0.25dB
11 -0.375dB
B[1:0] Reserved

 Address 0X37 : Device number and Version number


Device number and version number are the ID for the device.

BIT NAME DESCRIPTION VALUE FUNCTION


B[7:4] DN Device number 0101 Identification code
B[3:0] VN Version number 0010 Identification code

 Address 0X42 : level meter clear


AD82584F has 8 set of level meter which hold the maximum absolute value.
Each level meter has its own level meter clear.

BIT NAME DESCRIPTION VALUE FUNCTION


0 No clear
B[7] C1_CLR Clear CH1 level meter
1 Clear
0 No clear
B[6] C2_CLR Clear CH2 level meter
1 Clear
0 No clear
B[5] C3_CLR Clear CH3 level meter
1 Clear
0 No clear
B[4] C4_CLR Clear CH4 level meter
1 Clear

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 57/87
ESMT AD82584F
0 No clear
B[3] C5_CLR Clear CH5 level meter
1 Clear
0 No clear
B[2] C6_CLR Clear CH6 level meter
1 Clear
0 No clear
B[1] C7_CLR Clear CH7 level meter
1 Clear
0 No clear
B[0] C8_CLR Clear CH8 level meter
1 Clear

 Address 0X43 : Power meter clear


AD82584F has 8 set of level meter which continue update RMS value.
Each level meter has its own power meter clear.

BIT NAME DESCRIPTION VALUE FUNCTION


0 No clear
B[7] C1_CLR_RMS Clear CH1 power meter
1 Clear
0 No clear
B[6] C2_CLR_RMS Clear CH2 power meter
1 Clear
0 No clear
B[5] C3_CLR_RMS Clear CH3 power meter
1 Clear
0 No clear
B[4] C4_CLR_RMS Clear CH4 power meter
1 Clear
0 No clear
B[3] C5_CLR_RMS Clear CH5 level meter
1 Clear
0 No clear
B[2] C6_CLR_RMS Clear CH6 level meter
1 Clear
0 No clear
B[1] C7_CLR_RMS Clear CH7 level meter
1 Clear
0 No clear
B[0] C8_CLR_RMS Clear CH8 level meter
1 Clear

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 58/87
ESMT AD82584F
 Address 0X44 : Top 8 bit of C1 level meter
In one band DRC, channel-1 level meter is used for L channel.
In two/three bands DRC, channel-1 level meter is high frequency path of L channel.
The addresses to show channel-1 level meter are 0X44, 0X45, and 0X46.

BIT NAME DESCRIPTION VALUE FUNCTION


Top 8 bits of channel 1 0000000 Reset value
B[7:0] C1_LEVEL_T
level meter X Read out

 Address 0X45 : Middle 8 bit of C1 level meter

BIT NAME DESCRIPTION VALUE FUNCTION


Middle 8 bits of channel 1 0000000 Reset value
B[7:0] C1_LEVEL_M
level meter X Read out

 Address 0X46 : Bottom 8 bit of C1 level meter

BIT NAME DESCRIPTION VALUE FUNCTION


Bottom 8 bits of channel 1 0000000 Reset value
B[7:0] C1_LEVEL_B
level meter X Read out

 Address 0X47 : Top 8 bit of C2 level meter


In one band DRC, channel-2 level meter is used for R channel.
In two/three bands DRC, channel-2 level meter is high frequency path of R channel.
The addresses to show channel-2 level meter are 0X47, 0X48, and 0X49.

BIT NAME DESCRIPTION VALUE FUNCTION


Top 8 bits of channel 2 0000000 Reset value
B[7:0] C2_LEVEL_T
level meter X Read out

 Address 0X48 : Middle 8 bit of C2 level meter

BIT NAME DESCRIPTION VALUE FUNCTION


Middle 8 bits of channel 2 0000000 Reset value
B[7:0] C2_LEVEL_M
level meter X Read out

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 59/87
ESMT AD82584F
 Address 0X49 : Bottom 8 bit of C2 level meter

BIT NAME DESCRIPTION VALUE FUNCTION


Bottom 8 bits of channel 2 0000000 Reset value
B[7:0] C2_LEVEL_B
level meter X Read out

 Address 0X4A : Top 8 bit of C3 level meter


In one/two bands DRC, channel-3 level meter is no use.
In three bands DRC, channel-3 level meter is low frequency path of L channel.
The addresses to show channel-3 level meter are 0X4A, 0X4B, and 0X4C.

BIT NAME DESCRIPTION VALUE FUNCTION


Top 8 bits of channel 3 0000000 Reset value
B[7:0] C3_LEVEL_T
level meter X Read out

 Address 0X4B : Middle 8 bit of C3 level meter

BIT NAME DESCRIPTION VALUE FUNCTION


Middle 8 bits of channel 3 0000000 Reset value
B[7:0] C3_LEVEL_M
level meter X Read out

 Address 0X4C : Bottom 8 bit of C3 level meter

BIT NAME DESCRIPTION VALUE FUNCTION


Bottom 8 bits of channel 3 0000000 Reset value
B[7:0] C3_LEVEL_B
level meter X Read out

 Address 0X4D : Top 8 bit of C4 level meter


In one/two bands DRC, channel-4 level meter is no use.
In three bands DRC, channel-4 level meter is low frequency path of R channel.
The addresses to show channel-4 level meter are 0X4D, 0X4E, and 0X4F.

BIT NAME DESCRIPTION VALUE FUNCTION


Top 8 bits of channel 4 0000000 Reset value
B[7:0] C4_LEVEL_T
level meter X Read out

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 60/87
ESMT AD82584F
 Address 0X4E : Middle 8 bit of C4 level meter

BIT NAME DESCRIPTION VALUE FUNCTION


Middle 8 bits of channel 4 0000000 Reset value
B[7:0] C4_LEVEL_M
level meter X Read out

 Address 0X4F : Bottom 8 bit of C4 level meter

BIT NAME DESCRIPTION VALUE FUNCTION


Bottom 8 bits of channel 4 0000000 Reset value
B[7:0] C4_LEVEL_B
level meter X Read out

 Address 0X50 : Top 8 bit of C5 level meter


In one band DRC, channel-5 level meter is no use.
In two/three bands DRC, channel-5 level meter is band pass frequency path of L channel.
The addresses to show channel-5 level meter are 0X50, 0X51, and 0X52.

BIT NAME DESCRIPTION VALUE FUNCTION


Top 8 bits of channel 5 0000000 Reset value
B[7:0] C5_LEVEL_T
level meter X Read out

 Address 0X51 : Middle 8 bit of C5 level meter

BIT NAME DESCRIPTION VALUE FUNCTION


Middle 8 bits of channel 5 0000000 Reset value
B[7:0] C5_LEVEL_M
level meter X Read out

 Address 0X52 : Bottom 8 bit of C5 level meter

BIT NAME DESCRIPTION VALUE FUNCTION


Bottom 8 bits of channel 5 0000000 Reset value
B[7:0] C5_LEVEL_B
level meter X Read out

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 61/87
ESMT AD82584F

 Address 0X53 : Top 8 bit of C6 level meter


In one band DRC, channel-6 level meter is no use.
In two/three bands DRC, channel-6 level meter is band pass frequency path of R channel.
The addresses to show channel-6 level meter are 0X53, 0X54, and 0X55.

BIT NAME DESCRIPTION VALUE FUNCTION


Top 8 bits of channel 6 0000000 Reset value
B[7:0] C6_LEVEL_T
level meter X Read out

 Address 0X54 : Middle 8 bit of C6 level meter

BIT NAME DESCRIPTION VALUE FUNCTION


Middle 8 bits of channel 6 0000000 Reset value
B[7:0] C6_LEVEL_M
level meter X Read out

 Address 0X55 : Bottom 8 bit of C6 level meter

BIT NAME DESCRIPTION VALUE FUNCTION


Bottom 8 bits of channel 6 0000000 Reset value
B[7:0] C6_LEVEL_B
level meter X Read out

 Address 0X56 : Top 8 bit of C7 level meter


In one band DRC, channel-7 level meter is no use.
In two/three bands DRC, channel-7 level meter is summation path of L channel.
The addresses to show channel-7 level meter are 0X56, 0X57, and 0X58.

BIT NAME DESCRIPTION VALUE FUNCTION


Top 8 bits of channel 7 0000000 Reset value
B[7:0] C7_LEVEL_T
level meter X Read out

 Address 0X57 : Middle 8 bit of C7 level meter

BIT NAME DESCRIPTION VALUE FUNCTION


Middle 8 bits of channel 7 0000000 Reset value
B[7:0] C7_LEVEL_M
level meter X Read out

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 62/87
ESMT AD82584F

 Address 0X58 : Bottom 8 bit of C7 level meter

BIT NAME DESCRIPTION VALUE FUNCTION


Bottom 8 bits of channel 7 0000000 Reset value
B[7:0] C7_LEVEL_B
level meter X Read out

 Address 0X59 : Top 8 bit of C8 level meter


In one band DRC, channel-8 level meter is no use.
In two/three bands DRC, channel-8 level meter is summation path of L channel.
The addresses to show channel-8 level meter are 0X59, 0X5A, and 0X5B.

BIT NAME DESCRIPTION VALUE FUNCTION


Top 8 bits of channel 8 0000000 Reset value
B[7:0] C8_LEVEL_T
level meter X Read out

 Address 0X5A : Middle 8 bit of C8 level meter

BIT NAME DESCRIPTION VALUE FUNCTION


Middle 8 bits of channel 8 0000000 Reset value
B[7:0] C8_LEVEL_M
level meter X Read out

 Address 0X5B : Bottom 8 bit of C8 level meter

BIT NAME DESCRIPTION VALUE FUNCTION


Bottom 8 bits of channel 8 0000000 Reset value
B[7:0] C8_LEVEL_B
level meter X Read out

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 63/87
ESMT AD82584F
 Address 0X5C : I2S output selection
AD82584F provide I2S output function and the output point can be selected via bit 2~bit 0.

BIT NAME DESCRIPTION VALUE FUNCTION


B[7:3] Reserved
000 DSP input (Point1)
001 Pre-scale output (Point2)
010 Mixer output (Point3)
I2S DATA OUTPUT 011 EQ12 output (Point4)
B[2:0] I2S_DO_SEL
selection 100 Volume output (Point5)
101 Clipping output (Point6)
110 DC blocking HPF output (Point7)
111 Reserved
Point 1 Point 2

Point 3 Point 4

L
LRCIN ASRC PreScal M11 LCH
EQ1 EQ2 EQ11 EQ12 EQ15 EQ14 EQ15
BCLK M12
I2S
SDATA M21
RCH
R EQ1 EQ2 EQ11 EQ12 EQ15 EQ14 EQ15
ASRC PreScal M22

Point 5 Point 7
Point 6
MCLK PLL

LA
LCH Surrround Volume DRC 1 Clipping1 HPFdc 2 FIR PostScal S/H2 SDM PWM
LB
Power
Stage
RA
RCH Surrround Volume DRC 1 Clipping1 HPFdc 2 FIR PostScal S/H2 SDM PWM
RB

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 64/87
ESMT AD82584F
 Address 0X74 : MONO_KEY high byte
AD82584F doesn’t have PBTL pin in TSSOP 24 package option. It can set MONO_EN=1 &
MONO_KEY=3006 (hex) to configure MONO type.

BIT NAME DESCRIPTION VALUE FUNCTION


others Stereo
B[7:0] MK_HBYTE MONO KEY high byte
00110000 Mono

 Address 0X75 : MONO_KEY low byte

BIT NAME DESCRIPTION VALUE FUNCTION


others Stereo
B[7:0] MK_LBYTE MONO KEY low byte
00000110 Mono

 Address 0X84 : Protection register


The protection registers will show what kind of protection occurs.

BIT NAME DESCRIPTION VALUE FUNCTION


0 OC occur
B[7] A_OCP_N OCP register
1 Normal
0 OT occur
B[6] A_OTP_N OTP register
1 Normal
0 UV occur
B[5] A_UV_N UV register
1 Normal
0 BSUV occur
B[4] A_BSUV BSUV register
1 Normal
0 BSOV occur
B[3] A_BSOV BSOV register
1 Normal
0 CKERR occur
B[2] A_CKERR CKERR register
1 Normal
0 OV occur
B[1] A_OVP OVP register
1 Normal

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 65/87
ESMT AD82584F
 Address 0X85 : Protection latch register
The protection registers will show what kind of protection ever occurred.

BIT NAME DESCRIPTION VALUE FUNCTION


0 OC ever occur
B[7] A_OCP_N_LATCH OCP latch register
1 Normal
0 OT ever occur
B[6] A_OTP_N_LATCH OTP latch register
1 Normal
0 UV ever occur
B[5] A_UV_N_LATCH UV latch register
1 Normal
0 BSUV ever occur
B[4] A_BSUV_LATCH BSUV latch register
1 Normal
0 BSOV ever occur
B[3] A_BSOV_LATCH BSOV latch register
1 Normal
0 CKERR ever occur
B[2] A_CKERR_LATCH CKERR latch register
1 Normal
0 OV ever occur
B[1] A_OVP_LATCH OVP latch register
1 Normal

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 66/87
ESMT AD82584F
 Address 0X86 : Protection latch register
The protection latch registers will show what kind of protection ever occurred.
Using the protection clear registers can clear the corresponding protection latch registers.

BIT NAME DESCRIPTION VALUE FUNCTION


0 No clear
B[7] A_OCP_N_CLEAR OCP latch clear register
1 Clear
0 No clear
B[6] A_OTP_N_CLEAR OTP latch clear register
1 Clear
0 No clear
B[5] A_UV_N_CLEAR UV latch clear register
1 Clear
0 No clear
B[4] A_BSUV_CLEAR BSUV latch clear register
1 Clear
0 No clear
B[3] A_BSOV_CLEAR BSOV latch clear register
1 Clear
CKERR latch clear 0 No clear
B[2] A_CKERR_CLEAR
register 1 Clear
0 No clear
B[1] A_OVP_CLEAR OVP latch clear register
1 Clear

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 67/87
ESMT AD82584F
RAM access
The procedure to read/write coefficient(s) from/to RAM is as followings:

Read a single coefficient from RAM:


1. Write 7-bis of address to I2C address-0X1D
2. Write 1 to R1 bit and write 1/0 to RBS in address-0X2D
3. Read top 8-bits of coefficient in I2C address-0X1E
4. Read middle 8-bits of coefficient in I2C address-0X1F
5. Read bottom 8-bits of coefficient in I2C address-0X20

Read a set of coefficients from RAM:


1. Write 7-bits of address to I2C address-0X1D
2. Write 1 to RA bit and write 1/0 to RBS in address-0X2D
3. Read top 8-bits of coefficient A1 in I2C address-0X1E
4. Read middle 8-bits of coefficient A1in I2C address-0X1F
5. Read bottom 8-bits of coefficient A1 in I2C address-0X20
6. Read top 8-bits of coefficient A2 in I2C address-0X21
7. Read middle 8-bits of coefficient A2 in I2C address-0X22
8. Read bottom 8-bits of coefficient A2 in I2C address-0X23
9. Read top 8-bits of coefficient B1 in I2C address-0X24
10. Read middle 8-bits of coefficient B1 in I2C address-0X25
11. Read bottom 8-bits of coefficient B1 in I2C address-0X26
12. Read top 8-bits of coefficient B2 in I2C address-0X27
13. Read middle 8-bits of coefficient B2 in I2C address-0X28
14. Read bottom 8-bits of coefficient B2 in I2C address-0X29
15. Read top 8-bits of coefficient A0 in I2C address-0X2A
16. Read middle 8-bits of coefficient A0 in I2C address-0X2B
17. Read bottom 8-bits of coefficient A0 in I2C address-0X2C

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 68/87
ESMT AD82584F
Write a single coefficient from RAM:
1. Write 7-bis of address to I2C address-0X1D
2. Write top 8-bits of coefficient in I2C address-0X1E
3. Write middle 8-bits of coefficient in I2C address-0X1F
4. Write bottom 8-bits of coefficient in I2C address-0X20
5. Write 1 to W1 bit and write 1/0 to RBS in address-0X2D

Write a set of coefficients from RAM:


1. Write 7-bits of address to I2C address-0X1D
2. Write top 8-bits of coefficient A1 in I2C address-0X1E
3. Write middle 8-bits of coefficient A1 in I2C address-0X1F
4. Write bottom 8-bits of coefficient A1 in I2C address-0X20
5. Write top 8-bits of coefficient A2 in I2C address-0X21
6. Write middle 8-bits of coefficient A2 in I2C address-0X22
7. Write bottom 8-bits of coefficient A2 in I2C address-0X23
8. Write top 8-bits of coefficient B1 in I2C address-0X24
9. Write middle 8-bits of coefficient B1 in I2C address-0X25
10. Write bottom 8-bits of coefficient B1 in I2C address-0X26
11. Write top 8-bits of coefficient B2 in I2C address-0X27
12. Write middle 8-bits of coefficient B2 in I2C address-0X28
13. Write bottom 8-bits of coefficient B2 in I2C address-0X29
14. Write top 8-bits of coefficient A0 in I2C address-0X2A
15. Write middle 8-bits of coefficient A0 in I2C address-0X2B
16. Write bottom 8-bits of coefficient A0 in I2C address-0X2C
17. Write 1 to WA bit and write 1/0 to RBS in address-0X2D

Note that: the read and write operation on RAM coefficients works only if LRCIN (pin-15) switching on rising
edge. And, before each writing operation, it is necessary to read the address-0X24 to confirm whether RAM
is writable current in first. If the logic of W1 or WA is high, the coefficient writing is prohibited.

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ESMT AD82584F
 User-defined equalizer
2
The AD82584F provides 30 parametric Equalizer (EQ). User can program suitable coefficients via I C
control interface to program the required audio band frequency response for every EQ. The transfer function

A0  A1 z 1  A2 z 2
H ( z) 
1  B1 z 1  B2 z 2

The data format of 2’s complement binary code for EQ coefficient is 3.21. i.e., 3-bits for integer (MSB is the
sign bit) and 21-bits for mantissa. Each coefficient range is from 0x800000 (-4) to 0x7FFFFF
(+3.999999523). These coefficients are stored in User Defined RAM and are referenced in following
manner:

CHxEQyA0  A0
CHxEQyA1  A1
CHxEQyA2  A2
CHxEQyB1   B1
CHxEQyB 2   B 2

Where x and y represents the number of channel and the band number of EQ biquard.
All user-defined filters are path-through, where all coefficients are defaulted to 0 after being powered up,
except the A0 that is set to 0x200000 which represents 1.

 EQ arrangement
AD82584F provide 15 EQ per channel.
When, register with address-0X0C, bit-5, DEQE is set to high, the EQ-7, EQ-8, EQ9, and EQ10 will use
another filter coefficient stored in used defined RAM 0X68~0X7B.
When, register with address-0X0C, bit-6, BTE is set to high, the EQ-11 and EQ-12 will perform as bass and
treble respectively.
When three bands DRC enable, EQ-13, EQ-14, and EQ-15 will perform as APF, LPF, and HPF respectively.

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ESMT AD82584F

EQ1 EQ2 EQ3 EQ4 EQ5 EQ6

DEQ1 DEQ2 DEQ3 DEQ4 BASS Treble

EQ7 EQ8 EQ9 EQ10 EQ11 EQ12

APF LPF HPF

EQ13 EQ14 EQ15

 Mixer
The AD82584F provides mixers to generate the extra audio source from the input left and right channels.
The coefficients of mixers are defined in range from 0x800000 (-1) to 0x7FFFFF (0.9999998808). The
function block diagram is as following:

M12
LCH
L M11

M22
RCH
M21

R M32
SUB
M31

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ESMT AD82584F
 Pre-scale
For each audio channel, AD82584F can scale input signal level prior to EQ processing which is realized by
a 24-bit signed fractional multiplier. The pre-scale factor, ranging from -1 (0x800000) to 0.9999998808
(0x7FFFFF), for this multiplier, can be loaded into RAM. The default values of the pre-scaling factors are set
to 0x7FFFFF. Programming of RAM is described in RAM access.

 Post-scale
The AD82584F provides an additional multiplication after equalizing and before interpolation stage, which is
realized by a 24-bit signed fractional multiplier. The post-scaling factor, ranging from -1 (0x800000) to
0.9999998808 (0x7FFFFF), for this multiplier, can be loaded into RAM. The default values of the
post-scaling factors are set to 0x7FFFFF. All channels can use the channel-1 post-scale factor by setting the
post-scale link. Programming of RAM is described in RAM access.

 Power Clipping
The AD82584F provides power clipping function to avoid excessive signal that may destroy loud speaker. 3.
The power clipping level is defined by 24-bit representation and is stored in RAM address 0X55 of RAM
bank 0. The following table shows the power clipping level’s numerical representation.

Sample calculation for power clipping


Max Hex
dB Linear Decimal
amplitude (3.21 format)
PVDD 0 1 2097152 200000
PVDD*0.707 -3 0.707 1482686 169FBE
PVDD*0.5 -6 0.5 1048576 100000
(x/20)
PVDD*L x L=10 D=2097152xL H=dec2hex(D)

 Attack threshold
The AD82584F provides DRC function. When the input RMS exceeds the programmable attack threshold
value, the output power will be limited by this threshold power level via gradual gain reduction. Four sets of
DRC are provided. DRC1 is used for high frequency path in three bands DRC and used for L/R channel in
one band DRC. DRC2 is used for low frequency path in three bands DRC. DRC3 is used for band pass
frequency path in three bands DRC. DRC4 is used for the post DRC.
Attack threshold is defined by 24-bit presentation and is stored in RAM address 0X56, 0X58, 0X5A, 0X5C of
RAM bank 0.

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ESMT AD82584F
 Release threshold
After AD82584F has reached the attack threshold, its output power will be limited to that level. The output
power level will be gradually adjusted to the programmable release threshold level. Release threshold is
defined by 24-bit representation and is stored in RAM address 0X57, 0X59, 0X5B, and 0X5D of RAM bank 0.
The following table shows the attack and release threshold’s numerical representation.

Sample calculation for attack and release threshold


Hex
Power dB Linear Decimal
(3.21 format)
(PVDD^2)/R 0 1 2097152 200000
(PVDD^2)/2R -3 0.5 1048576 100000
(PVDD^2)/4R -6 0.25 524288 80000
(x/10)
((PVDD^2)/R)*L x L=10 D=2097152xL H=dec2hex(D)

To best illustrate the power limit function, please refer to the following figure.

Attack threshold

Release threshold
INPUT

Release threshold

Attack threshold

Δ gain2
GAIN
Δ gain1
Attack rate=Δ gain1/Δt1
Δ t1 Δ t2 Release rate=Δ
gain2/Δt2
Touch attack
threshold Under release
threshold

Attack threshold

Release threshold
OUTPUT

Release threshold

Attack threshold

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ESMT AD82584F
 Noise Gate Attack Level
When both left and right signals have 2048 consecutive sample points less than the programmable noise
gate attack level, the audio signal will multiply noise gate gain, which can be set at x1/8, x1/4, x1/2, or zero if
the noise gate function is enabled. Noise gate attack level is defined by 24-bit representation and is stored in
RAM address 0X5E of RAM bank 0.

 Noise Gate Release Level


After entering the noise gating status, the noise gain will be removed whenever AD82584F receives any
input signal that is more than the noise gate release level. Noise gate release level is defined by 24-bit
representation and is stored in RAM address 0X5F of RAM bank 0. The following table shows the noise gate
attack and release threshold level’s numerical representation.

Sample calculation for noise gate attack and release level


Input amplitude Hex
Linear Decimal
(dB) (1.23 format)
0 1 8388607 7FFFFF
-5
-100 10 83 53
-5.5
-110 10 26 1A
(x/20)
x L=10 D=8388607xL H=dec2hex(D)

 DRC Energy Coefficient


DRC_EC
x2 [n] xrms[n]

Z-1

1-DRC_EC

The above figure illustrates the digital processing of calculating RMS signal power. In this processing, a DRC
energy coefficient is required, which can be programmed for different frequency range. Four sets of energy
coefficients are provided and used for respective DRC. Energy coefficient is defined by 24-bit representation
and is stored in RAM address 0X60, 0X61, 0X62, and 0X63 of RAM bank 0. The following table shows the DRC
energy coefficient numerical representation.

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ESMT AD82584F
Sample calculation for DRC energy coefficient
DRC energy Hex
dB Linear Decimal
coefficient (1.23 format)
1 0 1 8388607 7FFFFF
1/256 -48.2 1/256 32768 8000
1/1024 -60.2 1/1024 8192 2000
(x/20)
L x L=10 D=8388607xL H=dec2hex(D)

The user defined RAM


The contents of user defined RAM is represented in following table.

RAM Bank selection = 0


Address NAME Coefficient Default
0x00 CH1EQ1A1 0x000000
0x01 st
CH1EQ1A2 0x000000
1 SET
0x02 CH1EQ1B1 0x000000
Channel-1 EQ1
0x03 CH1EQ1B2 0x000000
0x04 CH1EQ1A0 0x200000
0x05 CH1EQ2A1 0x000000
0x06 st
CH1EQ2A2 0x000000
1 SET
0x07 CH1EQ2B1 0x000000
Channel-1 EQ2
0x08 CH1EQ2B2 0x000000
0x09 CH1EQ2A0 0x200000
0x0A CH1EQ3A1 0x000000
0x0B st
CH1EQ3A2 0x000000
1 SET
0x0C CH1EQ3B1 0x000000
Channel-1 EQ3
0x0D CH1EQ3B2 0x000000
0x0E CH1EQ3A0 0x200000
0x0F CH1EQ4A1 0x000000
0x10 st
CH1EQ4A2 0x000000
1 SET
0x11 CH1EQ4B1 0x000000
Channel-1 EQ4
0x12 CH1EQ4B2 0x000000
0x13 CH1EQ4A0 0x200000
0x14 CH1EQ5A1 0x000000
st
0x15 1 SET CH1EQ5A2 0x000000
0x16 Channel-1 EQ5 CH1EQ5B1 0x000000
0x17 CH1EQ5B2 0x000000

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ESMT AD82584F
0x18 CH1EQ5A0 0x200000
0x19 CH1EQ6A1 0x000000
0x1A st
CH1EQ6A2 0x000000
1 SET
0x1B CH1EQ6B1 0x000000
Channel-1 EQ6
0x1C CH1EQ6B2 0x000000
0x1D CH1EQ6A0 0x200000
0x1E CH1EQ7A1 0x000000
0x1F st
CH1EQ7A2 0x000000
1 SET
0x20 CH1EQ7B1 0x000000
Channel-1 EQ7
0x21 CH1EQ7B2 0x000000
0x22 CH1EQ7A0 0x200000
0x23 CH1EQ8A1 0x000000
0x24 st
CH1EQ8A2 0x000000
1 SET
0x25 CH1EQ8B1 0x000000
Channel-1 EQ8
0x26 CH1EQ8B2 0x000000
0x27 CH1EQ8A0 0x200000
0x28 CH1EQ9A1 0x000000
0x29 st
CH1EQ9A2 0x000000
1 SET
0x2A CH1EQ9B1 0x000000
Channel-1 EQ9
0x2B CH1EQ9B2 0x000000
0x2C CH1EQ9A0 0x200000
0x2D CH1EQ10A1 0x000000
0x2E st
CH1EQ10A2 0x000000
1 SET
0x2F CH1EQ10B1 0x000000
Channel-1 EQ10
0x30 CH1EQ10B2 0x000000
0x31 CH1EQ10A0 0x200000
0x32 CH1EQ11A1 0x000000
0x33 st
CH1EQ11A2 0x000000
1 SET
0x34 CH1EQ11B1 0x000000
Channel-1 EQ11
0x35 CH1EQ11B2 0x000000
0x36 CH1EQ11A0 0x200000
0x37 CH1EQ12A1 0x000000
0x38 st
CH1EQ12A2 0x000000
1 SET
0x39 CH1EQ12B1 0x000000
Channel-1 EQ12
0x3A CH1EQ12B2 0x000000
0x3B CH1EQ12A0 0x200000
st
0x3C 1 SET CH1EQ13A1 0x000000

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ESMT AD82584F
0x3D Channel-1 EQ13 CH1EQ13A2 0x000000
0x3E CH1EQ13B1 0x000000
0x3F CH1EQ13B2 0x000000
0x40 CH1EQ13A0 0x200000
0x41 CH1EQ14A1 0x000000
0x42 st
CH1EQ14A2 0x000000
1 SET
0x43 CH1EQ14B1 0x000000
Channel-1 EQ14
0x44 CH1EQ14B2 0x000000
0x45 CH1EQ14A0 0x200000
0x46 CH1EQ15A1 0x000000
0x47 st
CH1EQ15A2 0x000000
1 SET
0x48 CH1EQ15B1 0x000000
Channel-1 EQ15
0x49 CH1EQ15B2 0x000000
0x4A CH1EQ15A0 0x200000
0x4B Channel-1 Mixer1 M11 0x7FFFFF
0x4C Channel-1 Mixer2 M12 0x000000
0x4D Channel-1 Prescale C1PRS 0x7FFFFF
0x4E Channel-1 Postscale C1POS 0x7FFFFF
A0 of L channel SRS
0X4F LSRSH_A0 C7B691
HPF
A1 of L channel SRS
0X50 LSRSH_A1 38496E
HPF
B1 of L channel SRS
0X51 LSRSH_B1 C46f8
HPF
A0 of L channel SRS
0X52 LSRSL_A0 E81B9
LPF
A1 of L channel SRS
0X53 LSRSL_A1 F22C12
LPF
B1 of L channel SRS
0X54 LSRSL_ B1 FCABB
LPF
0x55 CH1.2 Power Clipping PC1 0x200000
CH1.2 DRC1 Attack
0X56 DRC1_ATH 0x200000
threshold
CH1.2 DRC1 Release
0X57 DRC1_RTH 0x80000
threshold
CH3.4 DRC2 Attack
0X58 DRC2_ATH 0x200000
threshold

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ESMT AD82584F
CH3.4 DRC2 Release
0X59 DRC2_RTH 0x80000
threshold
CH5.6 DRC3 Attack
0x5A DRC3_ATH 0x200000
threshold
CH5.6 DRC3 Release
0x5B DRC3_RTH 0x80000
threshold
CH7.8 DRC4 Attack
0x5C DRC4_ATH 0x200000
threshold
CH7.8 DRC4 Release
0x5D DRC4_RTH 0x80000
threshold
0x5E Noise Gate Attack Level NGAL 0x00001A
Noise Gate Release
0x5F NGRL 0x000053
Level
0x60 DRC1 Energy Coefficient DRC1_EC 0x8000
0X61 DRC2 Energy Coefficient DRC2_EC 0x2000
0x62 DRC3 Energy Coefficient DRC3_EC 0x8000
0X63 DRC4 Energy Coefficient DRC4_EC 0x2000
0X64 DRC1 Power Meter C1_RMS
0X65 DRC3 Power Meter C3_RMS
0X66 DRC5 Power Meter C5_RMS
0X67 DRC7 Power Meter C7_RMS
0x68 CH1EQ1A1 0x000000
nd
0x69 2 SET CH1EQ1A2 0x000000
0x6A Channel-1 EQ1 CH1EQ1B1 0x000000
0x6B (DEQ1) CH1EQ1B2 0x000000
0x6C CH1EQ1A0 0x200000
0x6D CH1EQ2A1 0x000000
nd
0x6E 2 SET CH1EQ2A2 0x000000
0x6F Channel-1 EQ2 CH1EQ2B1 0x000000
0x70 (DEQ2) CH1EQ2B2 0x000000
0x71 CH1EQ2A0 0x200000
0x72 CH1EQ3A1 0x000000
nd
0x73 2 SET CH1EQ3A2 0x000000
0x74 Channel-1 EQ3 CH1EQ3B1 0x000000
0x75 (DEQ3) CH1EQ3B2 0x000000
0x76 CH1EQ3A0 0x200000
nd
0x77 2 SET CH1EQ4A1 0x000000

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ESMT AD82584F
0x78 Channel-1 EQ4 CH1EQ4A2 0x000000
0x79 (DEQ4) CH1EQ4B1 0x000000
0x7A CH1EQ4B2 0x000000
0x7B CH1EQ4A0 0x200000

RAM Bank selection = 1


Address NAME Coefficient Default
0x00 CH2EQ1A1 0x000000
0x01 st
CH2EQ1A2 0x000000
1 SET
0x02 CH2EQ1B1 0x000000
Channel-2 EQ1
0x03 CH2EQ1B2 0x000000
0x04 CH2EQ1A0 0x200000
0x05 CH2EQ2A1 0x000000
0x06 st
CH2EQ2A2 0x000000
1 SET
0x07 CH2EQ2B1 0x000000
Channel-2 EQ2
0x08 CH2EQ2B2 0x000000
0x09 CH2EQ2A0 0x200000
0x0A CH2EQ3A1 0x000000
0x0B st
CH2EQ3A2 0x000000
1 SET
0x0C CH2EQ3B1 0x000000
Channel-2 EQ3
0x0D CH2EQ3B2 0x000000
0x0E CH2EQ3A0 0x200000
0x0F CH2EQ4A1 0x000000
0x10 st
CH2EQ4A2 0x000000
1 SET
0x11 CH2EQ4B1 0x000000
Channel-2 EQ4
0x12 CH2EQ4B2 0x000000
0x13 CH2EQ4A0 0x200000
0x14 CH2EQ5A1 0x000000
0x15 st
CH2EQ5A2 0x000000
1 SET
0x16 CH2EQ5B1 0x000000
Channel-2 EQ5
0x17 CH2EQ5B2 0x000000
0x18 CH2EQ5A0 0x200000
0x19 CH2EQ6A1 0x000000
0x1A st
CH2EQ6A2 0x000000
1 SET
0x1B CH2EQ6B1 0x000000
Channel-2 EQ6
0x1C CH2EQ6B2 0x000000
0x1D CH2EQ6A0 0x200000

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ESMT AD82584F
0x1E CH2EQ7A1 0x000000
0x1F st
CH2EQ7A2 0x000000
1 SET
0x20 CH2EQ7B1 0x000000
Channel-2 EQ7
0x21 CH2EQ7B2 0x000000
0x22 CH2EQ7A0 0x200000
0x23 CH2EQ8A1 0x000000
0x24 st
CH2EQ8A2 0x000000
1 SET
0x25 CH2EQ8B1 0x000000
Channel-2 EQ8
0x26 CH2EQ8B2 0x000000
0x27 CH2EQ8A0 0x200000
0x28 CH2EQ9A1 0x000000
0x29 st
CH2EQ9A2 0x000000
1 SET
0x2A CH2EQ9B1 0x000000
Channel-2 EQ9
0x2B CH2EQ9B2 0x000000
0x2C CH2EQ9A0 0x200000
0x2D CH2EQ10A1 0x000000
0x2E st
CH2EQ10A2 0x000000
1 SET
0x2F CH2EQ10B1 0x000000
Channel-2 EQ10
0x30 CH2EQ10B2 0x000000
0x31 CH2EQ10A0 0x200000
0x32 CH2EQ11A1 0x000000
0x33 st
CH2EQ11A2 0x000000
1 SET
0x34 CH2EQ11B1 0x000000
Channel-2 EQ11
0x35 CH2EQ11B2 0x000000
0x36 CH2EQ11A0 0x200000
0x37 CH2EQ12A1 0x000000
0x38 st
CH2EQ12A2 0x000000
1 SET
0x39 CH2EQ12B1 0x000000
Channel-2 EQ12
0x3A CH2EQ12B2 0x000000
0x3B CH2EQ12A0 0x200000
0x3C CH2EQ13A1 0x000000
0x3D st
CH2EQ13A2 0x000000
1 SET
0x3E CH2EQ13B1 0x000000
Channel-2 EQ13
0x3F CH2EQ13B2 0x000000
0x40 CH2EQ13A0 0x200000
st
0x41 1 SET CH2EQ14A1 0x000000
0x42 Channel-2 EQ14 CH2EQ14A2 0x000000

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ESMT AD82584F
0x43 CH2EQ14B1 0x000000
0x44 CH2EQ14B2 0x000000
0x45 CH2EQ14A0 0x200000
0x46 CH2EQ15A1 0x000000
0x47 st
CH2EQ15A2 0x000000
1 SET
0x48 CH2EQ15B1 0x000000
Channel-2 EQ15
0x49 CH2EQ15B2 0x000000
0x4A CH2EQ15A0 0x200000
0x4B Channel-2 Mixer1 M21 0x000000
0x4C Channel-2 Mixer2 M22 0x7FFFFF
0x4D Channel-2 Prescale C2PRS 0x7FFFFF
0x4E Channel-2 Postscale C2POS 0x7FFFF
A0 of R channel SRS
0X4F RSRSH_A0 C7B691
HPF
A1 of R channel SRS
0X50 RSRSH_A1 38496E
HPF
B1 of R channel SRS
0X51 RSRSH_B1 C46f8
HPF
A0 of R channel SRS
0X52 RSRSL_A0 E81B9
LPF
A1 of R channel SRS
0X53 RSRSL_A1 F22C12
LPF
B1 of R channel SRS
0X54 RSRSL_ B1 FCABB
LPF
0x55 Reserved
0X56 Reserved
0X57 Reserved
0X58 Reserved
0X59 Reserved
0x5A Reserved
0x5B Reserved
0x5C Reserved
0x5D Reserved
0x5E Reserved
0x5F Reserved
0x60 Reserved
0X61 Reserved

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ESMT AD82584F
0x62 Reserved
0X63 Reserved
0X64 DRC2 Power Meter C2_RMS
0X65 DRC4 Power Meter C4_RMS
0X66 DRC6 Power Meter C6_RMS
0X67 DRC8 Power Meter C8_RMS
0x68 CH2EQ1A1 0x000000
nd
0x69 2 SET CH2EQ1A2 0x000000
0x6A Channel-2 EQ1 CH2EQ1B1 0x000000
0x6B (DEQ1) CH2EQ1B2 0x000000
0x6C CH2EQ1A0 0x200000
0x6D CH2EQ2A1 0x000000
nd
0x6E 2 SET CH2EQ2A2 0x000000
0x6F Channel-2 EQ2 CH2EQ2B1 0x000000
0x70 (DEQ2) CH2EQ2B2 0x000000
0x71 CH2EQ2A0 0x200000
0x72 CH2EQ3A1 0x000000
nd
0x73 2 SET CH2EQ3A2 0x000000
0x74 Channel-2 EQ3 CH2EQ3B1 0x000000
0x75 (DEQ3) CH2EQ3B2 0x000000
0x76 CH2EQ3A0 0x200000
0x77 CH2EQ4A1 0x000000
nd
0x78 2 SET CH2EQ4A2 0x000000
0x79 Channel-2 EQ4 CH2EQ4B1 0x000000
0x7A (DEQ4) CH2EQ4B2 0x000000
0x7B CH2EQ4A0 0x200000

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Revision: 1.6 82/87
ESMT AD82584F
Package Dimensions
 E-LQFP-48L (7mm x 7mm)

D1
D
48 37 37 48

1 36 36 D2 1

E2 DETAIL A
E E1

12 25 25 12

13 24 24 13

c
TOP VIEW BOTTOM VIEW

A1
b e L

SIDE VIEW DETAIL A

Dimension in mm Exposed pad


Symbol
Min Max Dimension in mm
A -- 1.60 Min Max
A1 0.05 0.15 D2 4.31 5.21
b 0.17 0.27 E2 4.31 5.21
c 0.09 0.20
D 6.90 7.10
D1 8.90 9.10
E 6.90 7.10
E1 8.90 9.10
e 0.50 BSC
L 0.45 0.75

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ESMT AD82584F
Package Dimensions
 TSSOP-24(E) (173 mil)

24 13

D2

E2 E E1 DETAIL A
PIN#1
MARK 1 12

c
TOP VIEW
D

A
A1

b e
L
SIDE VIEW

Dimension in mm Exposed pad


Symbol
Min Max Dimension in mm
A 1.00 1.20 Option 1 Min Max
A1 0.00 0.15 D2 4.35 4.75
b 0.19 0.30 E2 2.70 3.10
c 0.09 0.20
D 7.70 7.90
E 4.30 4.50
E1 6.30 6.50
e 0.65 BSC
L 0.45 0.75

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Revision: 1.6 84/87
ESMT AD82584F
Package Dimensions
 TSSOP-28 (173 mil)

28 15

D2

E2 E E1 DETAIL A
PIN#1
MARK 1 14
c
TOP VIEW
D

A
A1
1 14
b e
L
SIDE VIEW

Dimension in mm Exposed pad


Symbol
Min Max Dimension in mm
A -- 1.20 Min Max
A1 0.05 0.15 D2 5.00 6.40
b 0.19 0.30 E2 2.50 2.90
c 0.09 0.20
D 9.60 9.80
E 4.30 4.50
E1 6.30 6.50
e 0.65 BSC
L 0.45 0.75

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 85/87
ESMT AD82584F
Revision History

Revision Date Description

0.1 2017.10.12 Original.


Remove “Preliminary” & modify 0X5C default
1.0 2017.12.08
define.
1.1 2017.12.22 New add tape reel order information.
New add description of ESD in Absolute Maximum
1.2 2018.01.16
Ratings.
1) Add symbol of RDS(ON) in General Electrical
Characteristics.
1.3 2018.02.13
2) Remove bead in Application Circuit Example for
Mono.
1) Add output pin to GND AMR voltage.
2) Update application circuit for Stereo.
1.4 2018.05.25 3) Add Po vs. Supply voltage curve.
4) Update Power on sequence.
5) Update The user defined RAM.
1) Add Package Type of E-TSSOP 28L.
1.5 2018.07.27 2) Modify Pin Description of BCLK.
3) Update Detail Description for Address 0X01.
1) Add 4ohm BTL Performance Data.
2) Update Po vs. Supply voltage curve.
1.6 2019.03.29
3) Update package outline drawing of TSSOP-24
and TSSOP-28.

Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 86/87
ESMT AD82584F

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Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2019


Revision: 1.6 87/87

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