n

J
BE-I/BSC-Pfl-105/22,
B.E. lst Semester Examination, 2022-23
Subject : Semic~uductor Physics
Course: BSC-PH-105 (CSE/IT)

Time: 3 Hours Full Marks: 70

The figures in the margin indicate full marks. ,.
Candidares are requited to give their answers in their own words
as jar as practicable.
Answer QI ,Q6, anti any four from rhe rest taking at least two f rom each group.

Group-A
1. Answer any seven q,~esrions: Ix?
(a) Whal is free electron approxim.ation'l '
(b) Write down the name of an optoelectronic material.
(c) What is the full Conn of LED?
(d) What.is independent electron approximation?
(e) State char~c-neut.rality condition for a 11-type material al room temperature.
(f) What is effective mass of electron?
(g) What is work function ?
(h) Whal is barrier slrcngrh?
(i) What is the unit of 3D density of states1
(j) \Vhat is Weidman-Franz Jaw?

2. (a) Distingui.1h the following materials as metal , insulator and semiconductor:

(i) CdS, (ii) Ge, (iii) Al203, (iv) Au, (v) Si and (vi) Si02.
(b) Write down three meril.S an<l three demerits of quann1m free electron theory.
(c) Give an example ofa wide band semiconductor._ 6+(3+3)+2
3. (a) Distinguish between metal, insulator and semiconductor with necessary diagram. Give one
example of each.
(b) Write down the Fermi-Dirac distribu1ion function and plot it w.r.l E for T=Ok and T,;1,0k.

(c) Derive the expression of density of slates for conduction band of a semiconductor and plot it
w.r.t. E. (3+3)+(2+2)+(3+1)
4. (a) Differentiate between intrinsic and ex trinsic semiconductor. Draw the energy band diagram of
intrinsic, n and p type of semiconductor showing lhe position of the Fermi level in each.
(b) What is direct and indirect bandgap(Explain with E-k diagram)? Give one example of each.

( c) Define Schottky Junction. (3+3)+(4+2)+2=14

24148 Please Turn Over

52
BE-IIB SC-PH-105/22 (2)

5. (a) Write down the express ion of diift and

diffusio n current density for both p and n-typc
of
mate1ial.

(b) Write down the Mass Action Law.

(c) Write down the charge oeu1rnlity conditio n

of a p-type semicon ductor al room temperature.
He11ce, fiud out the concent ration of
cleclJ:ons and holes in terms of
ni (intrin sic c12ri·ier concen tration ) and NA (numbe
r of
ionized Accepte r atoms). Assume
that Nl >> 4nr
(d) The intrinsi c carrier concent ration of Si at 300
K is 10 10 cm- 3 . Jr is doped with 1015 boron
atoms cm- 3 and at 300 K a.11 tbc do1>ants are ionized.
Where is tbc.Ferm i level of this doped
semicon ductor located, witli respect to the inu-insic
Fermi level? Give your answer in eV.

4+2+(2+2)+4
Group-B
6. Answer any seven question :
1><7
(a) When can a Photon llv interact with a semicon
ductor of band gap Eg?
(b) Which is more probable at Therma l Equilib1ium
Emissio n or Absorption?
(c) At Quasi Equilib rium what is the criteria for emissio
n to be more probabl e than absorpt ion?
(d) In absorpt ion and emission is the wave vector
K conserved.
(e) Which has larger hand width absorption or spontan
eous emission?
(f) Caniers in a hot point probe method moves from
hot to cold or cold to hot junction .
(g) In a biased p-n junction in quasi equilib1ium light
emissio n occurs for reverse or forward_bias.
(h) Io an asymme tric mate1iaJ , how can we measur
e the resistivi ty'/
(i) In a thick sample. the electric ity distribution follows
a sphere or cylinde r.
U) Does Hall effect damage s the sample while characte
rizing it?

7. (a) Differe ntiate between spontan eous and stimula

ted emissio n.
(h) Describ e the reason for high intensit y beam in
a stimula ted emissio n .
(c) Show that at Therma l Equilib rium Absorp tion
is the more provabl e case than emissio n.
(d) Dete1m ine the criteria for emissio n probabi lity
to be more than absorpt ion probabi lity at Quasi
Equilib rium.
4+2+4+ 4
8. (a) Derive the express ion for Optical Joint Density
of Stares.
(b) Derive an expression for spontaneous emissio n rate
and absorpt ion rate at Therma l Equilibriun1.
(c) Explain the reason behind the differen ce in bandwi
dth for absorpt ion and spontan eous emission.

5+(3+3)+3
 ( 3) BE-IIBSC-PH-105/22

9. (a) Explain the process of measurement of resistivity with four probe method for thick and thin
semiconductor fiatnple.

(b) Explain Hall Effect Experiment.

(c) What is Hot Point Probe Method? (4+4)+4+2

10 .. (a) Determine the Density of states for 2D, JD and zero dimensional semiconductor materials.
(b) How can you determine the probability of filling and emptiness of an energy level E?

(c) Determine the probability of absorption between two levels E1 and Ei. (4+4+1)+2+3
 BE-(I)/(NEW)/BSC-PH 105/(R)/2021-22/UIT/BU
B.E Odd Semester(1st) Examination 2021-22
Subject: Semiconductor Physics
Code: BSC-PH 105
Branch: CSE, IT
Time: 3 Hours Full Marks: 70
Send this answer script to the mail id < [email protected]>
Group A (Answer any Four from Q. No. 1 to 6) 4x5=20

Q. Questions Marks
No.

1. Differentiate between direct and indirect band-gap semiconductors with one example for each. 5

2. In an intrinsic semiconductor, electron and hole effective masses are 0.6me and 0.4me 5
respectively, where me is the rest mass of the electron. What is the value of EFi – Eg/2 at 300 K?
Give your answer in meV. Note that all energies are referred with respect to the top of the
valence band.

3. Write down Fermi Dirac distribution function. Plot it with respect to energy E for T=0 K and 5
T K.

4. Prove that at thermal equilibrium absorption is more probable than emission. 5

5. Determine the criteria for emission to be more probable than absorption at Quasi Equilibrium. 5

6. Explain Hall effect experiment. 5

Group B (Answer any Five from Q. No. 7 to 13) 5x10=50

7. The intrinsic carrier concentration of Si at 300 K is 1010 cm-3. It is doped with 1015 boron 10
atoms cm-3 and at 300 K all the dopants are ionized. Where is the Fermi level of this doped
semiconductor located, with respect to the intrinsic Fermi level? Give your answer in eV. (1
eV= 1.6x10-19 J). For this semiconductor write down the charge neutrality condition.

8. Find out the expression of electron concentration n and hole concentration p in case of a p- 10
type material (doped with acceptor atoms only) at room temperature and do the same for n-
type material doped with donor atoms only. Assume that at room temperature all dopants are
ionized.

9. Explain the working principle of a forward biased Schottky (metal and n-type semiconductor) 10
junction diode along with necessary diagram.

10. Derive expression for Optical Joint density of states and write the condition for interaction of 10
photons with semiconductor.

11. Determine the rates of spontaneous emission and absorption. Compare their band widths. 10

12. Deduce the expression for Resistivity for thin and thick semiconductor sample by Four Probe 10
method.

13. Find the electron density of states for 2D, 1D and 0D semiconductor samples with proper 10
plots.

Semester: 1st Year: 2021-22 Subject Code: BSC-PH 105

 .,
~

B.E, l t nmhtation, 2019-20

ubject : emiconductor Physics
Paper: BSC-PH-105
(New)
Time: 3 Hours Full Mar.ks: 70
The figures in the margin indicatefull marks.
Candidates are required to give their answers in lheir own words
as far as practicable.
A11swer Question Nos. 1 and 6 cmd any four from the rest taki.n.g two from each Group.
Answer Separate Group in Separate Script.

Group -A

1. Answer any five: l x5=5

(a) Give an example of direct bandgap semiconductor.

(b) State charge-neutrality condition for an-type material.

(c) What is free electron approximation?

(d) Defi ne effective mass.

(e) What is phonon?

(f) What is the narne of the ratio of thermal conductivity and the product of temperature and
electrical conductivity?

(g) Write down one drawback of free electron theory.

2. (a) What are the different stages of free electron tl1eory? Write down the assumptions of classical
free electron theory.

{b) Write down four merits of classical free electron theory.

(c) Wri te down three demerits of classical free elecnon theory. (3+5)t4+3=15

3. (a) Distinguish among metal, insulator and semiconductor with necessary diagram.

(b) If n > p show that Er > Et i·

(c) What is Fenni-Dirac distribution function? Plot it for r = 0 and T * Ok.
(d) What is indirect bandgap semico nductor? Give one example. 6+2+(2+2)+(2+1)=15

16887 Please Turn Over

129
BE-IIBSC-PH-105/19 (2)

4. (a) Dif~ rcnii ate between int1insic and extrinsic erniconductor (bo!b II and p), Draw the
band diagram for each showi ng the po ition of the Fermi level.

(b) What is mass action law?

(c) Using mass action law and charoe neutrality condition find out (he concentration of n 3.nd
n-ty pe semiconductor (given NJ» 4nf). 3
(4+4)+ +~1

S. (a) Write down the expression of drift and di ffusio n current density for both p and n-typc
mate1ial.
. ·· • b d cap of semiconductor using
(b) W
nte down the condition of continuous and discrete an "'
Pe1my model. Draw necessary diagram.
(c) Write down the name of three optoelectronic materials.

Group-B

6. Answer any.five:
(a) What is the relation between the photon energy hu and semiconductor bandgap Egso that

photon interacts with the semiconductor?

(b) For absorption of photons between energy level E2 (in Conduction Band) and £1 (in Va!
Band) where electrons should be present and where holes should be present at same K value.

(c) What is gain medium?

(cl) Which of the Iwo, spontaneous emission or stimulated emission requires photon assistance?

(e) Is Momentum conserved in spontaneous emission and sti mulated emission?

(f) ln whi ch case is photon emitted arc all in phase, spontaneous emission or stimulated

emission?
(g) Whether in hot probe method carriers go from hot to cold or cold to hot contact?

7. (a) S~ow absorption, spontaneous emission and stimulated emission for a direct semiconductor
with proper diagram.
(b) Derive the expression for optical joint density of slates.
(c) Show lhat at thermal equilibrium absorption is the more probable case than emission.
Show lhe cri teria for emission probability to he more than absorption pro babT
(d) equilibrium. 1 , quast,
1ty ,or
2+5+4+4=15

8. (a) Discuss about the rate of absorption, spontaneous and stimulated

semiconductor. emission in a direct

(b) equilibrium.
Derive an expression for spo ntaneous emisswn
. rate and absorption rate at th.ermal

(c) Dctcnnine
. the criteri on for Gai n coefficient to be posit.Ive.
..
(d) Wh al 1s quasi equilibrium? 2+(4+4)+3+2=15
 9. (a) Explain the ptocess ct' measurement oii resisti~ity with fou( ri.roee method for thic1c and
~emiconductor sample.
(b) Explain ho\V we can measure Hall mo!,i.hty.

(c) Show with diagran). the process of Van Der Pauw measur©men.
(d) How is Hot point probe measurement done?

10. (a) Determine the Density of states foe 2D, 1D and zero dimensional semlconductetml!ter,lal's.
(b) Determine the probability of emission between two levels E1 and Ez.
(c) How can you detem1i.ne the probability of fiJling and e.rnptines.5 of an energy level IE.
(d) Write !he characteristics of spontaneous and stimulated emission in a diJ:ect semicoruluct©r.
(3+3+t)a!-3+2+3=~5
 object : mlconc1 r Pb
Paper: 8 •PH•t05 ( )
: 3nours
The figure.f in the margin lndicatt fall marks.
Candidates are required 10 naive th•,·r · ,,._.
• answers ,n nclr own wo
rds
as far as practicable.

AO•"er Question No. I and Question No. 6 and any/our from lhc re t taking at least two from each group.
Amwer separate group in se11arate script.
Group-A

I. An wer any fire questions:

(a) Whal i effective mass of electron?
(b) Give an example of indirec1 band gap semiconductor.
(c) Stale mass-a tion law.
(d) What is independem electron approximaiion?
(cl 1a1e charge-neutrali1y condi1ion for a p-typc material.
(f) \ hat is Lorentz no.?

?. (a) Whal arc lhc different stages of free electron 1heory? Write down the as umptions of classical free
electron theory.
(bl Wri1e down fou r merit\ of classical free electron theory.
(c) What is free-elec1ron appro,imation in free electron theory? (3+6)+4+2=15

1. (a) Di1tinguish be111ccn metal. insulator and em1conductor with necessary diagram.
(b) Write do11 n the Fermi-Di rac dl\tribut1on function and plo1 it w.r.t E for T = Ok and T '1' Ok.
(c) Deri,e the expression of den1i1y of s1a1e1 for conducuon band of a semiconductor and plot it w.r.t. E.
3+(2+2+2)+(4+2)= 15

(a) Differentiate be1ween m1rin1ic and extnnsic -.emiconductor (both n and p). Draw lhe energy band
diagram for each sh wing lhe posiuon of lhe Ferm, level.
(b) Whal i1 direct and indirect band gap'1 (Exrlam wnh E-k diagram). Give one example of each.
(6+3)+(4+2)= 15

Please Tum Over

Bli-11/J C-l'H•l05ll8 (2)
s. (a) Write down the cxpt sion of llrift $nd di(ft,tion current density for both p and
. ~~~~
(b) ~ 111c down the fiv demerits -of cla sicat free electron theory.

(c) Draw the accci 1or and donor conccnt~ation profile. pace-charge conccntrat(
Also. show the energy band diagram of a l>•njunction diode. on JlrtiftttaP:~

Group-B
6. nswer any five:

(a) What should be the value of hv so that the photon can interact with the semicondu.-.
~,orot~
(b) For absoq,tion of photons between energy level E2 (in Conduction Band) and i; (l
where electrons shouJ.d be present and Where holes should be present at same K vaJu: V¾
(c) For emission of photons between energy level E2 (in Conduction Band) and E c·
where electrons should be present an d wI1ere holes should be present at same K value.
l in Ya1t l1Q:

(d) Which one is photon assisted spontaneous emission or stimulated emission?

(e) In which case is photon emitted are directional, spontaneous emission or stimulated ..
em1sst0tt,
(f) In which case is photon emitted are all in phase, spontaneous emission or stimulated e . . ·
(g) \Vhat is seebeck effect? rn1~~?

7. (a) What are direct and indirect semiconductors?

(b) Explain absorption, spontaneous emission and stimulated emission for a direct sernicond
proper diagram.

(c) Write the characteristics of spontaneous and stimulated emission in a direct semiconductor.

(d) How emission of photons is made possible in indirect semiconductors?

4+4+
8. (a) Derive the expression for optical join! density of states.
(b) Show that at thermal equilibrium absorption is the more provable case than emission.
(c) Show the criteria for emission probability to be more than absorption probability fo
equilibrium.

9. (a) Discuss abou t the rate of absorption, spontaneous and stimulated emission in a direct semico
Derive the rate of spontaneous emission.
(b) Derive an expression for spontaneous emission rate and show its plot with photon energy.
(c) How can you find the gain coefficieni? When can the gain coefficient be positive?
(d) What are phonons? (3+3)+3+(2+?
 ( 3) BE-IIBSC-PH-IOS/18
o. (a) E ·plain the procc of mcasurciuent of resistivity With four probe method.
(b) Expl ai n how we ca,1 measure HaU mobility?

(c) Show with diagram lhe process of Van Der Pauw measurement.
(d) How is Hol point probe measurement done? 5+4+3+3el5