CMOS
CMOS
2. In a simple nMOS transistor model, the region where Ids (drain-source current) is
almost constant
a. Saturation
b. Cutoff
c. Linear
d. None of above
6. In a n-well process
a. P-type transistor is created on a substrate
b. N-type transistor is created in n-well
c. P-type transistor is created in n-well
d. None of the above
8. Logic ‘0’ and logic ‘1’ , both are passed in an acceptable fashion by
a. nmos pass transistor
b. Poly gate
c. Transmission gate
d. All of the above
9. In the IC fabrication process, sio2 is used as transistor
a. Source
b. Gate
c. Drain
d. None of the above
11. In the ASIC design flow, breaking a large system into sub-system or modules
a. Floor planning
b. Partitioning
c. Placement
d. None of the above
A. Parallel
B. Series
C. Cascade
D. Random
16. Which CMOS memory cell of the following is made of the least number of
transistors
a. SRAM
b. DRAM
c. Both options ‘a’ and ‘b’
d. None of the above
17. In CMOS circuits, which type of power dissipation occurs due to subthreshold,
gate, and junction leakage current ?
A. Static dissipation
B. Dynamic dissipation
C. Both a and b
D. None of the above
19. Transistor with improved gate structure that provides better control of current
by placing gate at multiple sides of the channel
A. PolyFET
B. FinFET
C. MEM-FET
D. None of the above
20. Contacts and vias have resistance. In order to reduce resistance in the layout
a. Use single large contact
b. Use multiple small contacts
c. Use contacts made from insulator
d. None of the above
21. Which of the following step takes input from detailed placemt ?
A. Initial Synthesis
B. Initial floorplan
C. Routing
D. None of the above
24. In modern VLSI processes, wires are very close to each other. When one wire
switches, it affect its neighbor through capacitive coupling; this effect is called
a. Crosstalk
b. Noise margin
c. Metal migration
d. None of the above
26. Design For Testability (DFT) refers to designing circuits that are testable
a. One of the important approach for DFT is scan based
b. Ability to set and reset every node of circuit and ability to read state of
any node are the key feature of DFT
c. DFT provides high fault coverage with few test vectors
d. All of the above
30. ASIC type for which all logic cells are predesigned and none of the mask
layers are customized
a. Standard cell based ASICs
b. Full custom ASICs
c. Field Programmable Gate Arrays
d. None of the above
31. Parasitic extraction program when run for a layout, collects information related
to
a. C and R values
b. Heat flow
c. Surface inversion
d. None of the above
33. While drawing a complex layout, higher level metal layers are used for
a. Power and Ground routing
b. Signal routing
c. only clock routing
d. None of the above
34. Static Timing Analysis (STA) is one of the technique to verify the timings of a
digital design
a. It is static as the analysis of the design is carried out statically and does
not depend upon the data values being applied at the input pins of the
design
b. It is complete and exhaustive verification of all the timing checks of a
design
c. It is faster and simpler way of checking and analyzing all timing paths
in the design for any timing violations
d. All of the above
35. CMOS Inverter with equal W for both pmos and nmos as well as equal L.for
both nmos and pmos will have
A. More resistance of n channel than p channel
B. More resistance of p channel than n channel
C. Equal resistance of n channel and p channel
D. All of the above
36. When condition is off for pull-down (nMOS) and on for pull-up (pMOS)
transistors of CMOS logic design, what will be the output:
A. 100
B. 15
C. 150
D. All of the above
39. Diffusion has both high capacitance and high resistance, it is generally made
A. As small as possible in the layout
B. As large as possible in the layout
C. As oxidation layer
D. None of the above
AnswerKey
1. B
2. A
3. D
4. C
5. B
6. C
7. C
8. C
9. D
10. C
11. B
12. B
13. A
14. D
15. A
16. B
17. A
18. C
19. B
20. B
21. C
22. A
23. C
24. A
25. A
26. D
27. D
28. C
29. B
30. C
31. A
32. C
33. A
34. D
35. B
36. C
37. B
38. B
39. A
40. C