2N5941 (SILICON)

2N5942

The RF Lin.e 40 W (PEPI-30 MHz - 2N5941

80 W (PEPI-30 MHz - 2N5942
RF POWER
NPN SILICON RF POWER TRANSISTORS TRANSISTORS
NPN SILICON

· .. designed primarily for applications as a high-power linear amplifier

from 2.0 to 30 MHz, in single sideband mobile, marine and base station
equipment.
• Specified 28 Volt, 30 MHz Characteristics -
Output Power = 40 W (PEP) - 2N5941 2N5941 2N5942
= 80 W (PEP) - 2N5942
Minimum Gain = 13 dB
Efficiency = 40%

HV/":>-
Intermodulation Distortion = -30 dB (Max)
• Isothermal-Resistor Design Results in Rugged Device Z
l STYLE I'
• 2N5942 Available as Matched Pairs for Push-Pull K oy PIN ~: :~~TER
3 EMITTER
Amplifier Applications

~rn:,O
r------t-B 4. COLLECTOR

.E::.I I=::±--t.
. .. N

2N5941 ~A--I---n-
SEATING PLANE

MATCHING PROCEOURE
,..
MILLIMETERS INCH
DIM MI. MAX MI' MAX
A 24.84 0.910 0'"
In the push-pull circuit configuration two device parameters are critical for
•
optimum circuit performance. These parameters are VSE(on) and hFE. Both
parameters can be guaranteed by measuring ICO of the devices and selecting
C
9.47
6.07
D '.59
216
9.73
7.14

2.91
... 0.313 0.383
0.239 OBI
O. .30
0086 0.105
0....
pairs with a "Ica ..;; 10 mAde. F 0.10 0.15 0.00'
1.
Actual Ica matching is performed in the 2N5942 test circuit with a VeE H 21.59 22.10
J .I
0 ...
.2
0.810
0.1
equal to 2B Volts. The base bias supply is adjusted to set Ica equal to 40
..
X ID.Bo 11.06 0.425 0.435
mAde using a reference standard 2N5942. The lea of all production 2N5942
transistors is measured using this base bias supply setting. The production
L
• ...
6.22 s...

3.1 <5,
0'48
0.150
0.255

0.188
Q 2.91 3.12 0.117 0.123
2N5942's are tested and categorized in ranges of 10 mAde. Finally, the de-
vices are stocked as pairs with a guaranteed l:l.ICQ ~ 10 mAde. CASE 211-01

·MAXIMUM RATINGS
Rating Symbol 2N5941 I 2N5942 Unit EMITTER
BASf
Collector-Emitter Voltage VCEO 35 Vdc 3 EMITTER

Collector-Base Voltage 65 Vdc ~ C'" ~ ~~".

bS2--l-n-
VCBO
Emitter-Base Voltage VEBO 4.0 Vdc 2N5942

Collector Current - Continuous IC 6.0 12 Adc r

Total Device Dissipation @ T C = 250 C
Derate above 25°C
Po 80
0.457 I 140
O.B
Watts
wf'lc DI.
A
•
MIUIMET

24.84
X
24.89
INCHES
MI.
0.970
AX
0.9111
Storage Temperature Range Tstg -65 to +200 °c
• .."
C
11.81 12.07
6.73
0.465
0.229
0.475
0

. D
E
2.1S
2.13
3.94
2.54
0.086 0.1
0.1184 0.100

..
F 0.10 0.15 0..... 0.00.
Indicates JEDEC Registered Data Q 18.29 18.54 0.720 0.730
"
... .......
H 38.10 1.400 1.100
J .1 3.23 0.123 0.121
The.. devic.. are designed for RF operation. The tot.1 davlce K 17.78 19.05 0.700
dissipation rating applies only when the device. are operated a.
L .n 6.48 0.245
M
RF amplifiers.
•
Q
1 ..
2.97
4.32
3.12
"44
0.117
0.170
0.123
CASE 211-02

2-347
2N5941, 2N5942 (continued)
*E lECTR ICAl CHARACTERISTICS (T c = 250 C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCEO 35 - Vdc
(lC = 100 mAdc,lB = 0)
Collector-Emitter Breakdown Voltage BVCES 65 - Vdc
(lC = 100 mAdc, VBE = 0)
Emitter·Base Breakdown Voltage BVEBO 4.0 -- Vdc
(IE = 1.0 mAdc, IC = 0)
Collector Cutoff Current ICES mAdc
(VCE = 28 Vdc, VBE = 0, TC = +550 C) 2N5941 - 5.0
2N5942 - 10

ON CHARACTERISTICS
DC Current Gain
(lC = 0.5 Adc, VCE = 5.0 Vdc) 2N5941
(lc = 1.0 Adc, VCE = 5.0 Vdc) 2N5942

DYNAMIC CHARACTERISTICS
Current·Gain-Bandwidth Product fT MHz
(lc = 0.25 Adc, VCE = 15 Vdc, f = 50 MHz) 2N5941 50 -
(lc = 0.5 Adc, VCE = 15 Vdc, f = 50 MHz) 2N5942 50 -
Output Capacitance Cob pF
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz) 2N5941 - 125
2N5942 - 250

FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain (Figure 1) GpE dB
(Pout = 40 W (PEP), IC = 1.78 Adc (Max), VCC = 28 Vdc, 2N5941 13 -
fl = 30 MHz, f2 = 30.001 MHz)
(Pout = BO W (PEP), IC= 3.575 Adc (Max), VCC = 2B Vdc, 2N5942 13 -
fl = 30 MHz, f2 = 30.001 MHz)
Intarmodulation Distortion Ratio (Figure 1) IMD dB
(Pout =40W (PEP),IC= 1.7BAdc (Max), VCC = 28 Vdc, 2N5941 - -30
fl = 30 MHz, f2 = 30.001 MHz)
(Pout = BOW (PEPI.IC= 3.575 Adc (Max), VCC = 28 Vdc 2N5942 - -30
fl = 30 MHz, 12 = 30.001 MHz)

Collector Efficiency 1) %
(Pout = 40 W (PEP), IC = 1.78 Adc (Max), VCC = 28 Vdc, 2N5941 40 -
1, = 30 MHz, 12 = 30.001 MHz)
(Pout = 80 W (PEP), IC = 3.575 Adc (Max), VCC = 28 Vdc, 2N5942 40 -

. 1, = 30 MHz, 12 = 30.001 MHz)

IndICates JEDEC Registered Data.

FIGURE 1 - 30 MHz TEST CIRCUIT
RF BEADS

ARCO 469
(170·780 pFI
II
VBB adjusted for ICO. 2N5941 - 20 mAde (leo = QUiescent
RFC. 20 TURNS #12 AWG ENAMELED WIRE CLOSE WOUND IN 2 LAYERS, 1/4"I.D. 2N5942 - 40 mAde Collector Current)
Tl: 20 TURNS #24AWG WIRE WOUND ON MICRD·METALS T37·7 TOROID
Cl - 2N5941 - 80·480 pF, ARCO 466 or Equiv
CORE CENTER TAPPED.
2N5942 - 170·780 pF, ARCO 469 or Equiv
T2: 1:9 XFMR; 6TURNS OF 2 TWISTED PAl RS OF #28 AWG ENAMELED WIRE. C2 - 2N5941 - 220 pF
(8 CRESTS PER INCH) BIFILARWOUND ON EACH OF 2 SEPARATE 8ALUN CORES. 2N5942 - 330 pF
(Stackpole #57·1503, No. 14 Material) Interconnected as shown
RF BEADS. FERROXCUBE #56·590·65/3B

2-348
 2N5941, 2N5942 (continued)

LINEAR OUTPUT POWER versus FREQUENCY

--
FIGURE 2 - 2N5941 FIGURE 3 - 2N5942
60 100
............ I--. r--. ~1.2W ........ 3.0W
......... ):::, 2.0W ........
"""
....... ......... 1--. r----....8oo rnW............
70 "-
40 ........, ............1.5W
I'- "' ....... ~ornw I'-......... r-..
......... ........
,;:
~ 3D r-.....
............
~s 50 """ ~ornw
-.....!;OW ........... .........
S
'"
~
Ii:
20
r-.......
!'-
I--.

r--.
4oorn~
""-.... ..............
150rn~1--.
'"~
Ii:
40
"-
Pin = 150 rnW (PEP)
rr-....... ~, """ ..............
............
..........

~
f!:
";;
Vcc = 28 Vdc
Pin=loornW(~
""" .......
"
0
f-

"f!:
3D

VCC = 28 Vdc ~
.......... .........
"-
""'"-"
0 Ico=2ornA 20
I'r-....... '5

"" "" ""~

ICO = iO rnA
10 ,E
,E
8.0

I I
"",,-
6.0
3.0 5.0 7.0
f, FREQUENCY (MHz)
10 20
" 3D
10
3.0 5.0 7.0
I, FREOUENCY (MHz)
10 20 30

OUTPUT POWER versus INPUT POWER

FIGURE 4 - 2N5941 FIGURE 5 - 2N5942
80 100
HVCC=~8VdC
ICO = 20 rnA
--t.VCC = Vdc
Ico=40rnA
~8 /
o- - TWO TONE TEST: I /'
it
e, 60 f----- TWO TONE TEST: "-
w f1 =30MHz V
"...- "-
s fl =30MHz
/"" - 12 = 30.001 MHz
'"~ ' - - - 12 = 30.001 MHz
3:
'"~ 60 V
0
"- 40
/ :i: /'
,
f-

. /V
f-
"f!: "~ 40
/'
".,
0 V "
0

~
./
20 } 20
/
./ ./
o /" o /
o 0.4 0.8 1.2 1.6 o 1.0 2.0 3.0 4.0

Pin, INPUT POWERW (PEP) Pin, INPUT POWER W(PEP)

FIGURE 6 - 2N5941 FIGURE 7 - 2N5942

80 100
HVCC=!8VdC - - t c c = \8 Vdc ~
ICO = 40 rnA
ICO = 20 rnA
80 _ TWO TONE TEST: 1 /
it 60 r - - TWO TONE TEST: fu fl = 4.0 MHz V
e, f1 = 4.0 MHz e,
3: f----.'2 = 4.001 MHz L---- 3:
or
- 12 = 4.001 MHz
./
'"
~ .,/
V ~
60
/'
:i: 40 :i:
f-
f-

"~ / "~ 40 /'

"
0 /'" 0"'5 V
} 20
V ,E 20
/'
,./
/
o V
o 40 80 120 160
o/
o 80 160 240 320

Pin, INPUTPOWER rnW (PEP) Pin, INPUT POWER rnW (PEP)

2-349
 2N5941, 2N5942 (continued)

INTERMODULATlON DISTORTION versus OUTPUT POWER

(f1 = 30 MHz, 12 = 30.001 MHz)

FIGURE 8 - 2N5941 FIGURE 9 - 2N5942

-10 -10
;;;
os ~
z
'"'" 0 - Vee = 28 Vdc '"~ Vcc = 28 Vdc
~ -2 rlen = 20 rnA -20 r--- t-ICO =40 rnA
'"
In '"
In
c c
'"'" '"'"
S
-----
-30 ;:: -30

g ....-- :3
=>
'"'"
..... ~
~

----
~ 1-3rd Order .,..-V ~
3rd Order V ,./'
~ -40 - -40
I-
!!'O
r-- _Vf--"'"
ci - I- 5thi Order
~
ci
~ rhordr
-50 -50 f--
o 10 20 30 40 50 o 20 40 60 80 100

Pout, RF OUTPUT POWER W(PEP) Pout, RF OUTPUT POWER W(PEP)

LIN EAR OUTPUT POWE R versus SUPPLY VOLTAGE

(11 = 30 MHz, 12 = 30.001 MHz)
FIGURE 10 - 2N5941 FIGURE 11 - 2N5942
80 13 0

-leaJ20rnA 12o -'ca140rnA

~;t

-- -- -
60 ~ 110
~
'" ~ 10 0
~
~PEP)
--
Pin=1.4W(P~ ~ Pin = 4.0 W (PEP) _
~ 40 ~ 0
I-

V f.---~w (PEP)
:::--
'" !:; ............... 3.0W~ f.---

--
j::
t=
'"'"
} " 20
~
~ ~ 5
<5
SO

40 / -::-,..- ~ 2.0 W(PEP)

O~ ~
.E

o 0
9.0 12 15 18 21 24 27 30 33 9.0 12 15 18 21 24 27 30 33

vee,SUPPLY VOLTAGE (VOLTS) vee,SUPPLY VOLTAGE (VOLTS)

FIGURE 12 - 2N5941 FIGURE 13 - 2N5942

80 160
IMD = -30 dB IMO 1= -30 dB I
I---Iea = 20 rnA 140 -lea=40rnA

~;t 60 ~ 120

'"~
V e,
~ 100
.,/
~ 40
/ ~ 80
/
I-
/'
'"j:: ./""
I-
'"~ 60
V
'"'"
<5
,E 20 ,........
V '"<5 40
L. ~
/ .E ~
0,....
o 0
9.0 12 15 18 21 24 27 30 33 9.0 12 15 18 21 24 27 30 33

Vee, SUPPLY VOLTAGE (VOLTS) vec,SUPPLYVOLTAGE (VOLTS)

2-350
 2N5941, 2N5942 (continued)

PARALLEL EQUIVALENT INPUT RESISTANCE versus FREQUENCY

FIGURE 14 - 2N5941 FIGURE 15 - 2N5942

0 0
I-
~
~ 8.o f - '-- vcc l= 28 JdC ot-- t- vcc = 28 Vdc
I- Ica=20mA Ica =40 mA
~~ r- - Pout = 40 W(PEP) t-- t- Pout = 80 W (PEP)
" '"
> !3 B.0
3w 0
d'"
wZ
~"
wI-
-I

"w
~'"
",,,,
~
ti
!:2 4.

2.0
0"- I-
-r- - I -
-
Or-

0
r- b-
- r-I-
r--
o
3.0 4.0 5.0 7.0 10 20 30 3.0 4.0 5.0 7.0 10 20 30

f, FREaUENCY (MHz) f, FREaUENCY (MHz)

PARALLEL EQUIVALENT INPUT CAPACITANCE versus FREQUENCY

FIGURE 16 - 2N5941 FIGURE 17 - 2N5942

10,000
~dC
500
o f-f--+-vcJ = 28
I-
Ica = 20 mA.I. I'
~ 400o f-I---I-- pout = 40 W(PEP) ot- t- I- VCC = 28 Vdc
Ica = 40 mA .!
Ii
-
I-
ffi~ -. t - t- I-Pout = SO W(PEP)
~ ~

~ ~ 3000
1'-" 0 Ii
::>z t"- ij
0" Ii
- r--
WI-

~ ~ 200 o 1--- 0""'" ~ 11

~j t- l""- t- I'
~
C
i3
100 o

o
3.0 4.0 5.0 7.0 10 20 30
0

3.0 4.0 5.0 7,0

I-t---

10
- t - t=
20 30
II
I,

I
I

f, FREaUENCY (MHz) f, FREnUENCY (MHz)

PARALLEL EQUIVALENT OUTPUT CAPACITANCE versus FREQUENCY

FIGURE 18 - 2N5941 FIGURE 19 - 2N5942
2500 5000
r-f-- I---VC~ = 2SIVdC - VCC I= 2S ~dC
Ica = 20 mA I
I- I---
Ica = 40 mA .!,
- r- I--- pout ~ I--- I- Pout = so W(PEP)
~
= 40 W(PEP) 4000
o
~LL:
r-.... w ~

~ ~ 3000
r--......
.......... .......
b- ""
01- .......
~ ~ 2000
I"- ~"
~u "-.....
............. -...~

---
~'5
o
'"
500
.:s
1000
r- ........
o
r-- o
3.0 4.0 5.0 7.0 10 20 30 3.0 4.0 5.0 7.0 10 20 30

f, FREnUENCY (MHz) f, FREnUENCY (MHz)

2·351
2N5941, 2N5942 (continued)
COLLECTOR CURRENTversusBASE·EMITTER VOLTAGE
FIGURE 20 - 2N5941 FIGURE 21 - 2N5942
100 100

0== 1= Vcc = 28 Vdc 50

~VcC=28 Vdc
0
- I- TC = 25 0 C
/ i== r--
1 r--- 20
TC = 25 0 C L

0 ffi 10
5. 0 "'
~ 5.0
'"
/ '" ./

~
2.0 2.0
1. 0 ./ 1.0

o. 5 S
~ 0.5

o. 2 0.2 L
O. 1 O. 1 ./
0.50 0.55 0.60 0.65 0.70 0.75 0.50 0.54 0.58 0.62 0.66 0.70
VBE. BASE·EMITTER VOLTAGE (VOLTS) VBE. BASE·EMITTER VOLTAGE (VOLTS)

SAFE OPERATING AREA

FIGURE 22 - 2N5941 FIGURE 23 - 2N5942
100
50
30

\ 10
5.0
0 3. 0
7
5 1.0

O. 5
o. 3
O. 1 O. 1
0.1 0.3 0.5 1.0 3.0 5.0 10 30 50 100 0.1 0.3 0.5 1.0 3.0 5.0 10 30 50 100
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS) VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)

FIGURE 24 - PUSH·PULL 120·WATT PEP, 2-30 MHz LINEAR AMPLIFIER

GpE = 13.5 dB,lMD = -31 dB ITyp)

T3

RF IN PUT .,........-r-"""'\.JV..AJ--.. +--uu..IJ"-tt--< RF OUTPUT

C7

C8

Cl 91 pF DIpped M,ca 01 lN4997 (Mounted to Heat Smk Near 01 and 021

C2 680 pF Dipped Mu:a Q1.Q2 2N5942 Matched Pair
C3,C4 3900 pF Ceramic (Total lead Length to Bases Not to Exceed 3/4") T1 A and B Consist of 5 Turns of 4 Pairs of #32 AWG loosely twisted,
C5,C6 0.047 pF Polyester Film (Totallllad Length to Collectors Not to Enameled Wires Wound on the Outer TorOids of INDIANA GENERAL TV
Exceed 1/2") Antenna Balum Core F684·1. C = 2 Pairs of #32 AWG Wound on
C7 27 pF Dipped Mica the Inner Toroid of the Balum Core
CB 3300 pF CeramLC T2 Collector Choke, 4 Turns, 2 TWisted Pairs of #22 AWG Enameled
C9,Cl0 0.33 j.lF Ceramic Wire (4 TWists Per Inch), Wound on INDIANA GENERAL F627-SUI or
Cll 500tlF, 6.0 Volt Electrolytic EqUIValent Toroid.
Al,R2 5,0 Ohm, (Two 10 Ohm, 1/2 Watt Carbon ReSistors in Parrallet) T3 A and 8 Consist of 5 Turns, 2 Twisted Pairs of #24 AWG, C Con-
A3 20 Ohms, 10 Watts sists of 10 Turns, 1 TWisted Pair of #24 AWG Enameled Wire.
l1,l2 10 j.lH Molded Chokes (AU Windmg 6 Twists Per Inch) Core'" INDIANA GENERAL
l3,l4 FERRQXCUBE VK200 19/48 (or 6 Ferrite Beads on #20 AWG) F624-19Ul or Equivalent.
NOTE For more informatIOn on transformers, see AN-593, "Broadband
lmear Power Amphflers USing Push-Pull Transistors."

The maximum theoretical output from a 28 Volt push·pull ampli· depending on the amount of flat-topping that can be tolerated,
fier, with a 1:4 output transformer, is 110-112 Watts, due to the and the compensation techniques of the transformer higher power
limited voltage swing (assuming the transformer is a perfect 1 :4). outputs can be realized at reasonably low distortion. Ideally a
In most transmission I ine type transformers, the transformation 1:6 output transformer would be required for a power output of
ratio is usually higher, especially at the higher frequencies. Thus. 150 Watt PEP.

2·352
2N5941, 2N5942 (continued)

APPLICATIONS INFORMATION

The 2N5941 and 2N5942 transistors are designed for linear power Since a multiple frequency test signal has an instantaneous power
amplifier operation in the HF region (2 to 30 MHz). They feature level which varies with time, power levels are normally expressed
guaranteed linear amplifier performance rather than the conven- in peak envelope power (PEP). This is the average power level of
tional performance demonstrated in a class C* amplifier. the envelope at its greatest amplitude point.
Class C operation is inherently non-linear, but in many power When the test signal consists of multiple signals with equal ampl j.
amplifier applications non-linear operation does not present major tudes and different frequencies, the relationship of average power
problems. With a single frequency driving signal, the only spurious and PEP is given by the following expression:
signals generated are harmonics and these can be suppressed in the
amplifier tuned networks and output filter. PEP
For single sideband (SSB), low level amplitude modulation
Average power = N
(AMI. and other types of complex signals, class C operation is gen-
erally not satisfactory. For instance, when a signal contains where N "" the number of input frequencies.
multiple frequencies at close spacings, odd-order non-I inearities will Therefore, when measuring the power level of a standard two-
generate spurious outputs which are within the passband of the tone test signal, a true average reading power meter will indicate
tuned circuits and filters; therefore, the spurious outputs are not 1/2 the PEP of the signal.
suppressed before they reach the antenna or other load. As a Linearity is tested by measuring the ~mplitudes of the 3rd and
result, such complex signals require linear amplification if the ampli- 5th order IMD products. The ratio of one of the 3rd order products
fied signal is to be free of spurious outputs. to one of the two desired frequencies is then expressed as a power
A detailed analysis of spurious signals generated by non-linear- ratio in decibels (dB). This is repeated for the 5th order products.
ities and linearity requirements of various applications is described The smaller of these two ratios (usually the 3rd order) is then
in Chapter 12 of Reference 1. included in the electrical characteristics specification as inter-
The following discussion concerns itself with a detailed descrip- modulation distortion ratio (lMD).
tion of the 2N5941-2 characterization curves and general informa- 2N5941-42 Perfo,mance Curves
tion on solid-state linear power amplifier design. Figures 2 through 7 show typical power output and gain char-
The Two-Tone Test acteristics versus frequency andlor input power. These curves are
The 2N5941-42 functional test specification consists of a linear similar to those found on other RF power transistor data sheets
power amplifier test with guaranteed limits on power output, gain, with one exception. a two-frequency test signal was used rather
efficiency, and intermodulation distortion (lMO) output levels. A than a single frequency signal.
two-tone test signal is used with the test amplifier as shown in The curves shown in Figures 8 and 9 are unique to transistors
Figure 1. characterized for linear power amplifier service and show the
typical IMD levels versus power output.
The two~tone test is one of many methods commonly used
The 2N5941-42 feature guaranteed IMD performance at the
for testing linear amplifier performance. This test involves driving
-30 dB level. However. the designer may desire IMD greater or
the amplifier with two RF signals, of equal amplitude, separated
less than -30 dB for a particular application. Figures Band 9 pro-
in frequency from each other by epproximately 1 kHz.
vide data on IMD levels that can be expected as a function of
When a two~tone test signal consisting of frequencies f1 and f2 output power.
is passed through a non-linear amplifier, odd order non-linearities Figures 10 and 11 show the variation in gain with dc supply
generate spurious signals near the desired carrier. The level of these voltage and provide data on gain only. They do not include infor-
spurious signals provides a measure of the degree of non~linearity mation on IMD ratio.
of the amplifier. This type of non-linearity is called intermodulation Figures 12 and 13 reflect the power output that can be obtained
distortion liMD). The spurious signals generated by IMD are at a fixed IMD ratio for operation with dc supply voltages other
further classified according to the exponential order of the amplifier than 2B Vdc.
non-linearity, i.e" 3rd ordar IMD products, 5th order IMD products, Figures 14 through 19 show the large signal impedance char-
etc. The 3rd and 5th order I MD products are usually the most signi- acteristics of the 2N5941-42. These are similar to curves shown on
ficant encountered with linsar power amplifiers. Data on both 3rd other Motorola data sheets except a two-frequency test signal was
and 5th order IMD are included in the 2N5941-42 characterization. used rather than a single frequency signal.
Third order IMO generates spurious signals near the operating It must be stressed that the data shown in Figures 14 through 19
frequency at frequencies 2fl - f2 and 2f2 - fl; and 5th order do not represent y. z, h, s, or any standard two-port parameter set.
IMD spurious signals are at frequencies 3fl - 2f2 and 3f2 - 2fl. The actual transistor impedance levels during normal operation in
Specifications and Characterization an amplifier are given. For a detailed discussion of RF power
transistor large signal impedance, see Reference 2.
The two·tone functional amplifier test is performed in a manner
identical to the conventional class C functional test with two excep- Linear Amplifier Oesign
tions: a two·frequencysignal is used in place of a single frequency, The following is a discussion of some general design considera-
and amplifier linearity is added to the items tested and specified. tions for solid-state linear power amplifiers. While this is not a
The functional test procedura for the 2N5941-42 requires detailed analysis of linear amplifier design. some general guidelines
driving the test amplifier with a two-frequency signal and measuring are provided.
power output, gain, efficiency, and linearity. The major difference between linear power amplifiers and class
Power output, gain, and efficiency measurement methods are C power amplifiers is in the dc bias circuitry. As stated in the intro-
the same for both linear and class C amplifiers. duction, class C operation usually involves a collector dc supply as

2-353
2N5941, 2N5942 (continued)

APPLICATIONS INFORMATION (continued)

the only bias voltage with Ve = Va = O. The collector current is active circuitry for biasing, and some rather exotic schemes have
zero until the input RF signal turns the transistor "on", been developed to provide the same results.
In contrast, a linear amplifier is normally operated with forward Another important consideration is the collector-output net~
bias and some collector current flowing when no signal is present. work. Normally, a network with low impedance' to ground for
The magnitude of no-signal collector current and the bias cir- harmonics provides better linearity than a network with high
cuitry may vary with the application. Optimum no-signal collector harmonic impedances; therefore, some experimentation with- net~
currents for the 2N5941 and 2N5942 were found to be approx- work configuration is in or-der. Proper impedance matching remains
imately 20 rnA and 40 rnA respectively. the primary factor in both input and output network design.
The key to bias circuitry for good linearity lies in maintaining Further, it must also' be stressed that the collector load impedance
the base-emitter de voltage relatively constant as the R F signal should be designed for the PEP, not the average power output.
amplitude varies. The inherent 'nature of a forward-biased R F See Chapter 13 of Reference 1 for a detailed discussion of network
power transistor is to bias itself "off" with increasing RF drive design considerations.
signal. Therefore, a constant voltage source is required for base Feedback may, also be employed to improve linearity and may
voltage. take the -form of either neutralization or negative RF feedback.
Temperature effects also complicate the situation, since VSE The possibilities here are limited only by the designer's imagination.
decreases with increasing temperature. Of course, negative RF feedback involves a decrease in gain to
A simple solution to the bias problem involves the use of a improve linearity.
forward~biased diode mounted on the transistor heat sink for
thermal coupling to the transistor. A sample of this technique is REFERENCES
shown in the test circuit of Figure 1. The capacitor in parallel with 1. Pappenfus, Bruehe r Schoenike, "Single Sideband Principles and
the diode helps maintain a constant VBE with RF drive and im- Circuits", McGraw-Hili.
proves linearity, while the diode provides temperature compensation 2. Hejhall, "Systemizing RF Power Amplifier Design", Motorol.
to prevent thermal runaway. It is also possible to use complex Semiconductor Products Inc., Application Note AN~282A.

·"Class C", as used here refers to operation with the no signal con·
ditions Ie "" 0,. and VeE = O. and a theoretical conduction angle
of less than 180°, even though the actual conduction angle may
be mo~e than 1800 .

2-354