Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2023

ISD 2023 - Week 2 Assignment

There are 10 questions for a total of 20 marks.

1. (2 marks) Consider a rectangular lattice where the atoms are spaced periodically with a lattice constant
a. It is convenient to represent this lattice in the reciprocal (Fourier) space. The various segments in a
reciprocal lattice are referred to as the Brillouin zones. Which of the following statements is/are true in a
reciprocal lattice?

A. the periodicity is 2⇡/a in k space

B. the periodicity in k space is a

EF)kT
eE
C. the first Brillouin zone is from ⇡/a to +⇡/a -

f(E) Y/1
=
+

D. the periodicity in k space is 2a

2. (2 marks) Consider an intrinsic Silicon (bandgap 1.12 eV) at room temperature (300 K). Let the probability
~

that a state located at the bottom of the conduction band is filled be (fc ), and the probability that a state

scenter
t
located at the top of the valence band is empty be (fv ). Which of the following is true?

A. fc > fv B. fc = fv C. fc < fv D. fc + fv = 0.5 Intrinsic

-EF
3. (2 marks) Consider intrinsic silicon at T=300 K. What is the Fermi level position relative to the bottom of
the conduction band? Assume Nc = 3 ⇥ 1019 cm 3, ni = 1 ⇥ 1010 cm 3.

A. 0.56 eV below the conduction band Intrinsic- EF center

of
Bandgap.

127 0E
B. 0.56 eV above the conduction band

C. 0.15 eV above the conduction band

D. 0.15 eV below the conduction band

4. (2 marks) Consider n-type silicon at T=300 K. What is the Fermi level position relative to the conduction
-

band edge? Assume Nc = 3 ⇥ 1019 cm 3, ni = 1 ⇥ 1010 cm 3 and ND = 1 ⇥ 1017 cm 3.

A. 0.56 eV below the conduction band

EF
Doped shifts near
->
to
(Bedge.
B. 0.56 eV above the conduction band E
-
EF Ei =

n. EF
-

C. 0.15 eV above the conduction band 05314... . . .

kiln(**)
E;
D. 0.15 eV below the conduction band
=0.41eV
Dr. Naresh Kumar Emani, EE @ IIT Hyderabad E-EC.EF 0.53.-oM =
Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2023

5. (2 marks) Consider the Fermi-Dirac distribution function (f (E)) at di↵erent temperatures as shown in the
figure. Which of the following statements is true regarding T1 , T2 ?

A. T2 = T1 6= 0 B. T2 > T1 C. T2 < T1 D. T2 = T1 = 0

6. (2 marks) Consider three typical semiconductors A, B and C with bandgap EgA , EgB and EgC respectively.
The intrinsic carrier concentration ni of three materials as a function of temperature 1/T is shown in the

gin
figure. Which of the following is true regarding their bandgap?

A. EgA < EgB < EgC B. EgB < EgA < EgC
o
C. EgA > EgB > EgC D. EgB > EgA > EgC

Reflect and remember: The intrinsic carrier concentration increased by over 4 orders of magnitude
as the temperature increased by 150 K. Why does the intrinsic carrier density increase with
increasing temperature? Also, notice that at high temperatures ni seems to converge to a particular
number. What is this limit of ni at very high temperatures?

Dr. Naresh Kumar Emani, EE @ IIT Hyderabad Page 2

 Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2023

7. (2 marks) Consider two non-degenerate semiconductors A and B with bandgap EgA and EgB respectively.
The resistivities ⇢ of these two materials (⇢A and ⇢B ) reduce with the reciprocal of temperature 1/T as
shown in the figure. Which of the following is true regarding their bandgap?
-
Eglat.
lognia

A. EgA = EgB 6= 0 B. EgA > EgB C. EgA < EgB D. EgA = EgB = 0

8. (2 marks) (GATE-EC2022) In a non-degenerate bulk semiconductor with electron density n = 1016 cm–3 ,
the value of EC –EF n = 200 meV , where EC and EF n denote the bottom of the conduction band energy
and electron Fermi level energy, respectively. Assume the thermal voltage as 26 mV and the intrinsic carrier
concentration is 1010 cm–3 . For n = 0.5 ⇥ 1016 cm–3 , the closest approximation of the value of (EC –EF n ),
among the given options is meV . -
(Ec EF)/kT
-

10.2), KT
n N(.z
=

(x163 =
-

A. 165
2
=

(E. EF(kT
B. 235
EEF 1n2
-

-0.2
0.5X166
-
-

C. 218
Ne =

kT
D. 182 0.218 eV.
Ec EF
=

9. (2 marks) (GATE-EC2023) In a semiconductor, the Fermi energy level lies 0.35 eV above the valence
Ny

ph band. The e↵ective density of states in the valence band at T=300 K is 1 ⇥ 1019 cm 3 . The thermal
equilibrium hole concentration in silicon at 400 K is ⇥1013 cm 3.
-

Given kT = 0.026 eV . (Recall,

NV
e↵ective density of states Nv depends on e↵ective mass and temperature) EF 0.35eV Ev
= +

P1400k -700p.2,4,69 exp 25x40 &

- 0.35
A. 36 B. 92 C. 63 D. 25 =
+

p Nv exp(Ev EF)/ kT
-
300

6.2x10"/cm3.
=

Dr. Naresh Kumar Emani, EE @ IIT Hyderabad Page 3

=
 Introduction to Semiconductor Devices NPTEL Online Course, July - Oct 2023
ND
10. (2 marks) Consider a silicon sample doped with 1017 cm–3 phosphorus atoms. Assume the donor energy
-

level is 45 meV below Ec for phosphorus. We have seen that at T = 0 K the dopant atoms are not ionized
-

(i.e., the excess electron is at the dopant site and cannot move around the lattice.). At higher temperatures,
some of the dopants are ionized and they contribute to electrons in the conduction band. Estimate the
probability of ’finding’ an electron at the donor energy level at T = 300 K by calculating ED EF . Based
on this can you infer what fraction of the donors are ”not ionized”? You may assume that an electron at
ED implies that the corresponding fraction of dopant atoms are not ionized. -- Ec

54,0.095EF
↓
-ED

↓
EF E;
f(Ep) Ep
-

17
EF)IKT
-
10 A. 100 % =
0.55 ↑
(n,10
-

ki 1 e 0.42 Ei
=

B. 2.3 %
+

↓
----------

509570.026
#
-

0.42eV
=
C. 65 % =
1 e
+ 0.56!-E x
D. 20 %
=
0.023
Reflect and remember: You will notice that as Nd increases, EF moves toward ED , and the
probability of non-ionization can become quite large. In reality, the impurity level broadens into an
impurity band that merges with the conduction band in heavily doped semiconductors (i.e., when
donors or acceptors are close to one another). This happens for the same reason energy levels
broaden into bands when atoms are brought close to one another to form a crystal. The electrons
in the impurity band are also in the conduction band.
Therefore, the assumption of n = Nd (or complete ionization) is reasonable even at very
high doping densities. The same holds true in P-type materials.
Refer Donald Neamen, Semiconductor Physics and Devices, 4th Edition, page no. 118-120 for
additional details.

Dr. Naresh Kumar Emani, EE @ IIT Hyderabad Page 4