LM3046

LM3046 Transistor Array

Literature Number: SNLS372A

 LM3046 Transistor Array
July 1999

LM3046
Transistor Array
General Description Features
The LM3046 consists of five general purpose silicon NPN n Two matched pairs of transistors
transistors on a common monolithic substrate. Two of the VBE matched ± 5 mV
transistors are internally connected to form a differentially- Input offset current 2 µA max at IC = 1 mA
connected pair. The transistors are well suited to a wide n Five general purpose monolithic transistors
variety of applications in low power system in the DC through n Operation from DC to 120 MHz
VHF range. They may be used as discrete transistors in n Wide operating current range
conventional circuits however, in addition, they provide the n Low noise figure: 3.2 dB typ at 1 kHz
very significant inherent integrated circuit advantages of
close electrical and thermal matching. The LM3046 is sup-
plied in a 14-lead molded small outline package. Applications
n General use in all types of signal processing systems
operating anywhere in the frequency range from DC to
VHF
n Custom designed differential amplifiers
n Temperature compensated amplifiers

Schematic and Connection

Diagram
Small Outline Package

00795001
Top View
Order Number LM3046M
See NS Package Number M14A

© 2004 National Semiconductor Corporation DS007950 www.national.com

LM3046
Absolute Maximum Ratings (Note 1) Distributors for availability and specifications. (TA =
25˚C)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/

LM3046
Each Total Units
Transistor Package
Power Dissipation:
TA = 25˚C 300 750 mW
TA = 25˚C to 55˚C 300 750 mW
TA > 55˚C Derate at 6.67 mW/˚C
TA = 25˚C to 75˚C mW
TA > 75˚C mW/˚C
Collector to Emitter Voltage, VCEO 15 V
Collector to Base Voltage, VCBO 20 V
Collector to Substrate Voltage, VCIO (Note 2) 20 V
Emitter to Base Voltage, VEBO 5 V
Collector Current, IC 50 mA
Operating Temperature Range −40˚C to +85˚C
Storage Temperature Range −65˚C to +85˚C
Soldering Information
Dual-In-Line Package Soldering (10 Sec.) 260˚C
Small Outline Package
Vapor Phase (60 Seconds) 215˚C
Infrared (15 Seconds) 220˚C

See AN-450 “Surface Mounting Methods and Their Effect on

Product Reliability” for other methods of soldering surface
mount devices.

Electrical Characteristics
(TA = 25˚C unless otherwise specified)
Limits
Parameter Conditions Units
Min Typ Max
Collector to Base Breakdown Voltage (V(BR)CBO) IC = 10 µA, IE = 0 20 60 V
Collector to Emitter Breakdown Voltage (V(BR)CEO) IC = 1 mA, IB = 0 15 24 V
Collector to Substrate Breakdown IC = 10 µA, ICI = 0 20 60 V
Voltage (V(BR)CIO)
Emitter to Base Breakdown Voltage (V(BR)EBO) IE 10 µA, IC = 0 5 7 V
Collector Cutoff Current (ICBO) VCB = 10V, IE = 0 0.002 40 nA
Collector Cutoff Current (ICEO) VCE = 10V, IB = 0 0.5 µA
Static Forward Current Transfer VCE = 3V IC = 10 mA 100
Ratio (Static Beta) (hFE) IC = 1 mA 40 100
IC = 10 µA 54
Input Offset Current for Matched VCE = 3V, IC = 1 mA 0.3 2 µA
Pair Q1 and Q2 |IO1 − IIO2|
Base to Emitter Voltage (VBE) VCE = 3V IE = 1 mA 0.715 V
IE = 10 mA 0.800
Magnitude of Input Offset Voltage for VCE = 3V, IC = 1 mA 0.45 5 mV
Differential Pair |VBE1 − VBE2|
Magnitude of Input Offset Voltage for Isolated VCE = 3V, IC = 1 mA 0.45 5 mV
Transistors |VBE3 − VBE4|, |VBE4 − VBE5|,
|VBE5 − VBE3|

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 LM3046
Electrical Characteristics (Continued)
(TA = 25˚C unless otherwise specified)
Limits
Parameter Conditions Units
Min Typ Max
Temperature Coefficient of Base to VCE = 3V, IC = 1 mA −1.9 mV/˚C
Emitter Voltage

Collector to Emitter Saturation Voltage (VCE(SAT)) IB = 1 mA, IC = 10 mA 0.23 V

Temperature Coefficient of VCE = 3V, IC = 1 mA 1.1 µV/˚C
Input Offset Voltage

Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2: The collector of each transistor is isolated from the substrate by an integral diode. The substrate (terminal 13) must be connected to the most negative point
in the external circuit to maintain isolation between transistors and to provide for normal transistor action.

Electrical Characteristics
Parameter Conditions Min Typ Max Units
Low Frequency Noise Figure (NF) f = 1 kHz, VCE = 3V, 3.25 dB
IC = 100 µA, RS = 1 kΩ
LOW FREQUENCY, SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS
Forward Current Transfer Ratio (hfe) f = 1 kHz, VCE = 3V, 110
IC = 1 mA
Short Circuit Input Impednace (hie) 3.5 kΩ
Open Circuit Output Impedance (hoe) 15.6 µmho
Open Circuit Reverse Voltage Transfer Ratio (hre) 1.8 x 10−4
ADMITTANCE CHARACTERISTICS
Forward Transfer Admittance (Yfe) f = 1 MHz, VCE = 3V, 31 − j 1.5
Input Admittance (Yie) IC = 1 mA 0.3+J 0.04
Output Admittance (Yoe) 0.001+j 0.03
Reverse Transfer Admittance (Yre) See Curve
Gain Bandwidth Product (fT) VCE = 3V, IC = 3 mA 300 550
Emitter to Base Capacitance (CEB) VEB = 3V, IE = 0 0.6 pF
Collector to Base Capacitance (CCB) VCB = 3V, IC = 0 0.58 pF
Collector to Substrate Capacitance (CCI) VCS = 3V, IC = 0 2.8 pF

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LM3046
Typical Performance Characteristics
Typical Collector To Base Typical Collector To Emitter
Cutoff Current vs Ambient Cutoff Current vs Ambient
Temperature for Each Temperature for Each
Transistor Transistor

00795008
00795009

Typical Static Forward

Current-Transfer Ratio and Typical Input Offset Current
Beta Ratio for Transistors Q1 for Matched Transistor Pair
and Q2 vs Emitter Current Q1 Q2 vs Collector Current

00795010
00795011

Typical Static Base To Emitter

Voltage Characteristic and Input Typical Base To Emitter
Offset Voltage for Differential Voltage Characteristic for
Pair and Paired Isolated Each Transistor vs Ambient
Transistors vs Emitter Current Temperature

00795012
00795013

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 LM3046
Typical Performance Characteristics (Continued)

Typical Input Offset Voltage

Characteristics for Differential
Pair and Paired Isolated
Transistors vs Ambient Typical Noise Figure vs
Temperature Collector Current

00795014 00795015

Typical Noise Figure vs Typical Noise Figure vs

Collector Current Collector Current

00795016
00795017

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LM3046
Typical Performance Characteristics (Continued)

Typical Normalized Forward

Current Transfer Ratio, Short
Circuit Input Impedance,
Open Circuit Output Impedance,
and Open Circuit Reverse
Voltage Transfer Ratio vs Typical Forward Transfer
Collector Current Admittance vs Frequency

00795018
00795019

Typical Input Admittance Typical Output Admittance

vs Frequency vs Frequency

00795020 00795021

Typical Reverse Transfer Typical Gain-Bandwidth

Admittance vs Frequency Product vs Collector Current

00795023
00795022

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 LM3046 Transistor Array
Physical Dimensions inches (millimeters)
unless otherwise noted

Molded Small Outline Package (M)

Order Number LM3046M
NS Package Number M14A

National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves
the right at any time without notice to change said circuitry and specifications.
For the most current product information visit us at www.national.com.

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