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HW3 Chapter3

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52 views3 pages

HW3 Chapter3

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Ali Altay
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© © All Rights Reserved
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HW3_Chapter 3

1. What is the difference between enhancement mode and depletion mode? Sketch the general
current-voltage characteristics for both enhancement-mode and depletion-mode MOSFETs.
Define the saturation and nonsaturation bias regions.

2. Describe the enhancement mode NMOS and PMOS both by explaining and drawing.

3. Describe the depletion mode NMOS and PMOS both by explaining and drawing.

4. How many modes does NMOS and PMOS have? Write down the corresponding equations.

5. Calculate the drain current in an NMOS transistor with parameters


𝑉𝑇𝑁 = 0.4 V, 𝑘 ′ 𝑛 = 120μA/𝑉 2 , W = 10μm, L = 0.8μm, and with applied voltages of 𝑉𝐷𝑆 = 0.1 V and
i. 𝑉𝐺𝑆 = 0,
ii. 𝑉𝐺𝑆 = 1 V,
iii. 𝑉𝐺𝑆 = 2 V,
iv. 𝑉𝐺𝑆 = 3 V.

6. Determine the value of the process conduction parameter 𝑘 ′ 𝑛 for an NMOS transistor with
𝜇𝑛 = 600𝑐𝑚2 /𝑉 − 𝑠 and for an oxide thickness 𝑡𝑜𝑥 of 500𝐴0

7. An NMOS device has parameters 𝑉𝑇𝑁 = 0.8 𝑉, L = 0.8μm, and 𝑘 ′ 𝑛 = 120μA/𝑉 2 . When the
transistor is biased in the saturation region with 𝑉𝐺𝑆 = 1.4V, the drain current is 𝐼𝐷 =0.6 mA
(a) What is the channel width W?
(b) Determine the drain current when 𝑉𝐷𝑆 = 0.4V
(c) What value of 𝑉𝐷𝑆 puts the device at the edge of saturation?

8. For a p-channel enhancement mode MOSFET, 𝑘 ′ 𝑝 = 50μA/𝑉 2 . The device has drain currents of
𝐼𝐷 =0.225 mA at 𝑉𝑆𝐺 = 𝑉𝑆𝐷 = 2V and 𝐼𝐷= 0.65 mA at 𝑉𝑆𝐺 = 𝑉𝑆𝐷 = 3V. Determine the W/L ratio
and the value of 𝑉𝑇𝑃 .

9. A p-channel depletion-mode MOSFET has parameters 𝑉𝑇𝑃 = 2𝑉 𝑘 ′ 𝑝 = 40μA/𝑉 2 and W/L = 6.


Determine 𝑉𝑆𝐷(𝑠𝑎𝑡) for
(a) 𝑉𝑆𝐺 = −1V,
(b) 𝑉𝑆𝐺 = 0, and
(c) 𝑉𝑆𝐺 = 1V. If the transistor is biased in the saturation region, calculate the drain current for
each value of 𝑉𝑆𝐺 .
10. Enhancement-mode NMOS and PMOS devices both have parameters L = 4μm and
𝑡𝑜𝑥 =500𝐴0 . For the NMOS transistor, 𝑉𝑇𝑁 = 0.6 𝑉, 𝜇𝑛 = 675𝑐𝑚2 /𝑉 − 𝑠, and the channel width
is 𝑊𝑛 for the PMOS transistor, 𝑉𝑇𝑃 = −0.6V, 𝜇𝑃 = 375𝑐𝑚2 /𝑉 − 𝑠, and the channel width is 𝑊𝑃 .
Design the widths of the two transistors such that they are electrically equivalent and the drain
current in the PMOS transistor is 𝐼𝐷 =0.8 mA when it is biased in the saturation region at 𝑉𝑆𝐺 =
5𝑉. What are the values of 𝐾𝑛 , 𝐾𝑃 , 𝑊𝑛 , and 𝑊𝑃 ?

11. In the circuit in Figure P3.26, the transistor parameters are 𝑉𝑇𝑁 = 0.8𝑉 and 𝐾𝑛 = 0.5𝑚A/𝑉 2
. Calculate 𝐼𝐷 , 𝑉𝐺𝑆 , and 𝑉𝐷𝑆

12. Consider the circuit in Figure. The transistor parameters are 𝑉𝑇𝑃 = −0.8𝑉 and Kp = 0.5
mA/𝑉 2 . Determine 𝐼𝐷 , 𝑉𝑆𝐺 , and 𝑉𝑆𝐷
13. The transistor parameters for the transistor in Figure are 𝑉𝑇𝑁 = 0.4 V, 𝑘 ′ 𝑛 = 120μA/𝑉 2 ,
W/L = 50.
. (a) Determine 𝑉𝐺𝑆 such 𝐼𝐷 = 0.35𝑚𝐴
(b) Determine 𝑉𝐷𝑆 and 𝑉𝐷𝑆 (𝑠𝑎𝑡)

14. The PMOS transistor in Figure has parameters 𝑉𝑇𝑃 = −0.7 V, 𝑘 ′ 𝑝 = 50μA/𝑉 2 , L = 0.8μm, and λ
= 0. Determine the values of W and R such that 𝐼𝐷 = 0.1 mA and 𝑉𝑆𝐷 = 2.5 V.

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