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IRFB31N20D

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0% found this document useful (0 votes)
19 views2 pages

IRFB31N20D

Uploaded by

Luis Torres
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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isc N-Channel MOSFET Transistor IRFB31N20D,IIRFB31N20D

·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤82mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

·DESCRITION
·High Frequency DC-DC converters

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage 200 V

VGS Gate-Source Voltage ±30 V

ID Drain Current-Continuous 31 A

IDM Drain Current-Single Pulsed 124 A

PD Total Dissipation @TC=25℃ 200 W

Tj Max. Operating Junction Temperature 175 ℃

Tstg Storage Temperature -55~175 ℃

·THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Channel-to-case thermal resistance


Rth(ch-c) 0.75 ℃/W

Channel-to-ambient thermal resistance


Rth(ch-a) 62 ℃/W

isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark


isc N-Channel MOSFET Transistor IRFB31N20D,IIRFB31N20D

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA 200 V

VGS(th) Gate Threshold Voltage VDS=VGS; ID =250μA 3 5.5 V

RDS(on) Drain-Source On-Resistance VGS=10V; ID=18A 82 mΩ

IGSS Gate-Source Leakage Current VGS= ±30V ±0.1 μA

IDSS Drain-Source Leakage Current VDS=200V; VGS= 0V 25 μA

VSD Diode forward voltage IF=18A; VGS = 0V 1.3 V

NOTICE:
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark

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