SPP08P06P

SPB08P06P

SIPMOS  Power-Transistor
Features Product Summary
· P-Channel Drain source voltage VDS -60 V
· Enhancement mode Drain-source on-state resistance RDS(on) 0.3 W

· Avalanche rated Continuous drain current ID -8.8 A

· dv/dt rated
· 175°C operating temperature

Type Package Ordering Code Pin 1 PIN 2/4 PIN 3

SPP08P06P P-TO220-3-1 Q67040-S4729 G D S
SPB08P06P P-TO263-3-2 Q67040-S4233

Maximum Ratings,at T j = 25 °C, unless otherwise specified

Parameter Symbol Value Unit
Continuous drain current ID A
T C = 25 °C -8.8
T C = 100 °C -6.2
Pulsed drain current ID puls -35.2
T C = 25 °C
Avalanche energy, single pulse EAS 70 mJ
I D = -8.8 A , VDD = -25 V, R GS = 25 W
Avalanche energy, periodic limited by Tjmax EAR 4.2
Reverse diode dv/dt dv/dt 6 kV/µs
I S = -8.8 A, V DS = -48 , di/dt = 200 A/µs,
T jmax = 175 °C
Gate source voltage VGS ±20 V
Power dissipation Ptot 42 W
T C = 25 °C
Operating and storage temperature Tj , Tstg -55...+175 °C
IEC climatic category; DIN IEC 68-1 55/175/56

Rev 1.1 Page 1 1999-11-22

 SPP08P06P
SPB08P06P
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 3.6 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm 2 cooling area 1) - - 40

Electrical Characteristics, at T j = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS -60 - - V
VGS = 0 V, I D = -250 µA
Gate threshold voltage, VGS = VDS VGS(th) -2.1 -3 -4
I D = -250 µA, Tj = 25 °C
Zero gate voltage drain current IDSS µA
VDS = -60 V, V GS = 0 V, T j = 25 °C - -0.1 -1
VDS = -60 V, V GS = 0 V, T j = 150 °C - -10 -100
Gate-source leakage current IGSS - -10 -100 nA
VGS = -20 V, VDS = 0 V
Drain-source on-state resistance RDS(on) - 0.23 0.3 W

VGS = -10 V, I D = -6.2 A

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev 1.1 Page 2 1999-11-22
 SPP08P06P
SPB08P06P

Electrical Characteristics, at T j = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Dynamic Characteristics
Transconductance gfs 1.5 3.6 - S
VDS³2*I D*RDS(on)max , ID = -6.2 A
Input capacitance Ciss - 335 420 pF
VGS = 0 V, V DS = -25 V, f = 1 MHz
Output capacitance Coss - 105 135
VGS = 0 V, V DS = -25 V, f = 1 MHz
Reverse transfer capacitance Crss - 65 95
VGS = 0 V, V DS = -25 V, f = 1 MHz
Turn-on delay time td(on) - 16 24 ns
VDD = -30 V, V GS = -10 V, ID = -6.2 A,
RG = 6 W
Rise time tr - 46 69
VDD = -30 V, V GS = -10 V, ID = -6.2 A,
RG = 6 W
Turn-off delay time td(off) - 48 72
VDD = -30 V, V GS = -10 V, ID = -6.2 A,
RG = 6 W
Fall time tf - 14 21
VDD = -30 V, V GS = -10 V, ID = -6.2 A,
RG = 6 W

Rev 1.1 Page 3 1999-11-22

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SPB08P06P

Electrical Characteristics, at T j = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Dynamic Characteristics
Gate to source charge Qgs - 1.4 2.1 nC
VDD = -48 , ID = -8.8 A
Gate to drain charge Qgd - 4 6
VDD = -48 V, ID = -8.8 A
Gate charge total Qg - 10 15
VDD = -48 V, ID = -8.8 A, VGS = 0 to -10 V
Gate plateau voltage V(plateau) - -3.85 - V
VDD = -48 , I D = -8.8 A

Parameter Symbol Values Unit

min. typ. max.
Reverse Diode
Inverse diode continuous forward current IS - - -8.8 A
T C = 25 °C
Inverse diode direct current,pulsed ISM - - -35.2
T C = 25 °C
Inverse diode forward voltage VSD - -1.17 -1.55 V
VGS = 0 V, I F = -8.8 A
Reverse recovery time trr - 60 90 ns
VR = -30 V, IF=I S , di F/dt = 100 A/µs
Reverse recovery charge Qrr - 100 150 nC
VR = -30 V, IF=l S , diF/dt = 100 A/µs

Rev 1.1 Page 4 1999-11-22

 SPP08P06P
SPB08P06P
Power dissipation Drain current
Ptot = f (TC) ID = f (TC )
parameter: VGS ³ 10 V
SPP08P06P SPP08P06P
50 -10

W A

40 -8

35 -7
Ptot

ID
30 -6

25 -5

20 -4

15 -3

10 -2

5 -1

0 0
0 20 40 60 80 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190
TC TC

Safe operating area Transient thermal impedance

I D = f ( VDS ) ZthJC = f (tp )
parameter : D = 0 , T C = 25 °C parameter : D = tp /T
SPP08P06P SPP08P06P
-10 2
10 1

K/W
tp = 12.0µs
A
10 0
Z thJC

-10 1
100 µs
ID

10 -1
D
/I
DS
V

D = 0.50
=

1 ms -2
)

0.20
on

10
(
DS
R

0 0.10
-10 10 ms
0.05
DC single pulse
0.02
10 -3
0.01

-10 -1 -1 0 1 2
10 -4 -7 -6 -5 -4 -3 -2 0
-10 -10 -10 V -10 10 10 10 10 10 10 s 10
VDS tp

Rev 1.1 Page 5 1999-11-22

 SPP08P06P
SPB08P06P
Typ. output characteristic Typ. drain-source-on-resistance
I D = f (VDS); T j=25°C RDS(on) = f (ID )
parameter: tp = 80 µs parameter: VGS
SPP08P06P SPP08P06P
-21 Ptot = 42.00W 1.0
A W a b c d e f g h
j i VGS [V]
-18
a -4.0
b -4.5
0.8
-16 h c -5.0

RDS(on)
d -5.5
0.7
-14
g e -6.0
ID

f -6.5 0.6
-12
f g -7.0
h -7.5 0.5
-10
i -8.0
e
j -10.0 0.4
-8
d
-6 0.3
c
-4 0.2
b VGS [V] =
-2 0.1 a b c d e f g h i j i
j
a -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -10.0

0 0.0
0 -2 -4 -6 -8 V -11 0 -2 -4 -6 -8 -10 -12 -14 A -18
VDS ID

Typ. transfer characteristics I D= f ( V GS ) Typ. forward transconductance

VDS³ 2 x I D x RDS(on)max gfs = f(ID); Tj=25°C
parameter: tp = 80 µs parameter: gfs
-30 6
A

S
-24
-22
-20 4
gfs
ID

-18
-16
3
-14
-12
-10 2
-8
-6
1
-4
-2
0 0
0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 0 -2 -4 -6 -8 -10 -12 -14 -16 A -20
VGS ID

Rev 1.1 Page 6 1999-11-22

 SPP08P06P
SPB08P06P
Drain-source on-state resistance Gate threshold voltage
RDS(on) = f (Tj) VGS(th) = f (Tj)
parameter : I D = -6.2 A, V GS = -10 V parameter: VGS = VDS , ID = -250 µA
SPP08P06P
1.0 -5.0

W V
98%
0.8 -4.0
RDS(on)

V GS(th)
0.7 -3.5

typ
0.6 -3.0

0.5 -2.5
2%
98%
0.4 -2.0

typ
0.3 -1.5

0.2 -1.0

0.1 -0.5

0.0 0.0
-60 -20 20 60 100 140 °C 200 -60 -20 20 60 100 °C 180
Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = f (VSD )
parameter: VGS=0V, f=1 MHz parameter: Tj , tp = 80 µs
SPP08P06P
3
10 -10 2

pF Ciss

-10 1
IF
C

10 2
Coss

Crss
-10 0
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)

10 1 -10 -1
0 -5 -10 -15 -20 -25 -30 V -40 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0
VDS VSD

Rev 1.1 Page 7 1999-11-22

 SPP08P06P
SPB08P06P
Avalanche energy Typ. gate charge
EAS = f (Tj) VGS = f (QGate )
para.: I D = -8.8 A , VDD = -25 V, R GS = 25 W parameter: ID = -8.8 A pulsed
SPP08P06P
80 -16

mJ V

60 -12
E AS

VGS
50 -10

40 -8
0,2 VDS max 0,8 VDS max

30 -6

20 -4

10 -2

0 0
25 45 65 85 105 125 145 °C 185 0 2 4 6 8 10 12 nC 15
Tj QGate

Drain-source breakdown voltage

V(BR)DSS = f (Tj)

SPP08P06P
-72

-68
V(BR)DSS

-66

-64

-62

-60

-58

-56

-54
-60 -20 20 60 100 140 °C 200
Tj

Rev 1.1 Page 8 1999-11-22