Sol Sol 5 Sol Chapter -14 SEMICONDUCTOR MULTIPLE CHOICE QUESTIONS The semiconductors are generally (1) Monovalent (2) Divalent (3) Trivalent (4) Tetravalent Answer (4) Semiconductors are generally tetravalent like silicon and gallium. The resistivity of a semiconductor depends upon (1) Size of the atom (2) The nature of atoms (3) Type of bonds (4) Size and types of motion Answer (2) The resistivity of a semiconductor depends mainly on the kind of atoms and the valence electrons they possess. The impurity atoms with which pure silicon should be doped to make a p-type semiconductor are those of (1) Phosphorus (2) Antimony (3) Boron (4) Copper Answer (3) The impurities needed to make holes it should be a trivalent substance, of the third group which happens to be boron A pure semiconductor has (1) An infinite resistance at 0°C 2) Afinite resistance which does not depend upon temperature (@ A finite resistance which increases with temperature 4) Afinite resistance which decreases with temperature Sol. Answer (4)A simple semiconductor has a finite resistance. An increase in temperature increases number of charge carries and increases conductivity. The rate of recombination or generation are governed by the law(s) of (1) Mass conservation (2) Electrical neutrality (3) Thermodynamics (4) Chromodynamics Answer (3)Carriers flow from higher to lower concentration like heat.6. An mtype semiconductor is electrically (1) Positive (2) Negative (3) May be positive or negative (4) Neutral Sol. Answer (4) The presence of charge carries does not mean a semiconductors has any net charge. 7. Asolid having uppermost energy band partially filled with electrons is called (1) An insulator (2) Aconductor (3) A semiconductor (4) None of these Sol. Answer (2) A solid which has uppermost energy band partially filled with electron is called a conductor 8, The energy gap for an insulator may be () Lev (2) 0.02 ev (3) bev (40.7 ev Sol. Answer (3) The energy gap for an insulators is very high around 6 eV. 9. If Nais number density of acceptor atoms added and Np is number density of donor atoms added to a semiconductor, ne and np are the number density of electrons and holes in it, then () ne = Np. Mp = Na (2) Ne = N4.Mh= Np (3) ne + Np = M+ Nala) Ne +N4 = Mn + ND Sol. Answer (4) Donor atoms increase number of conduction electron and must be added to available electrons. Similarly for holes and acceptor atoms. The equation is formed according to the law of electrical neutrality 10. Inan unbiased p-n junction which of the following is correct? () pside is at higher potential than side 2) side is at higher potential than pside (9) Both p-side and n-side are at the same potential (4) Any of the above is possible depending upon the carrier density in the two sides Sol. Answer (2)In the depletion region n-side has positive ions and p-side is with negative ion. Hence n-side has longer potential.Sol Sol Ina full wave rectifier circuit operating from 50 Hz mains frequency, the fundamental frequency in the ripple would be (1) 25 Hz (2) 50 Hz (3) 70.7 Hz (4) 100 He Answer (4) if mains frequency is 50 Hz after full wave rectification the frequency becomes double that of mains. So answer is 100 Hz. In a semiconductor diode, the reverse biased current is due to drift of free electrons and holes caused by (1) Thermal excitations only (2) Impurity atoms only (3) Both (1) & (2) (4) Neither (1) nor (2) Answer (1) In case of reverse bias the reverse current is independent of reverse bias voltage but depends only on temperature of junction. The value of form factor in case of half wave rectifier is aan (2) 157 (3) 127 (4) 0.48 ‘Answer (2) Form facior= _ RMS value of output voltage average value of output voltage14, Ina semiconductor diode, Pside is earthed and A-side is put at potential of -2V, the diode shall (1) Conduct (2) Not conduct (3) Conduct partially (4) Break down Sol Answer (1) Pside is put at higher potential than N side hence the diode will conduct. 18. Two identical p-njunctions may be connected in series with a battery in three ways as shown in the adjoining figure. The potential drop across the p-n junctions are equal in PI} PIN-PIM APH Ly (1) First and second circuits (2) Second and third t ! circuits ! ! (3) Third and first circuits (4) Allof these ! 1 Sol, Answer (2)First is not bias second and third are bias and have same potential drop across diodes 16. The zener diode is used for (1) Rectification (2) Amplification (3) Stabilization (4) Alll of these Sol. Answer (3) Zener diode is a reverse biased transistor used for voltage stabilisation. 17. In the diagram shown below, the input is across the terminals A and Cand the output is across B and D. Then the output is 8(1) Zero (2) Sameasinput (3). Full wave rectified (4)Half wave rectified Sol. Answer (3) The diagram is an example of a full wave rectifying circuit 17. Ajunction diode, in which one of the p or msections is made very thin, can be used to convert light energy into electrical eneray, then the diode is called (1) Light emitting diode (2) Zener diode (3) Solar cell (4) Photo diode Sol. Answer (3) A diode used to convert light energy to electrical energy is called a photo diode. 18. The material suitable for making a solar cell is, () PbS (2) GaAs (3) Cdse (4) Ge Sol. Answer (2)Ga As has a band gap close to 1.5 eV which in same as maximum intensity of solar radiation spectrum. 19. Inwhich of the configurations of a transistor, the power gain is highest? (1) Common base (2) Commonemitter_ (3) Common collector (4) Same in all the three Sol. Answer (2) SHORT QUESTION ANSWER (3 Marks Question) Q1: Pure Si at 300 K has equal concentration of free electrons (ne) and holes (nx) as 2.8 x 10° m™*. Doping by trivalent impurity increases hole concentration to 5.0 x 107 m”*. Calculate ne in doped silicon. Solution: — Here » = 25.10 Using, »,="-=Q2: Find the maximum wavelength of electromagnetic radiation, which can create a hole-electron pair in germanium. Given that forbidden energy gap in germanium is 0.72 eV ‘Solution: Here, ‘The maximum wavelength of radiation, which can create a hole electron pair in germination is given by Q.3 The circuit shown in the figure contains two diodes each with a forward resistance of 50 ohm and with infinite reverse resistance. If the battery voltage is 6V, find the current through the 100 ohm resistance. |<} see} Lj, $> ns? 1 ! (Delhi 2008) 1 Answer: @ Tntrinsic Ptpe semiconductor semiconductor 1] The Pure | 4 tetravent semi semiconductors (Ge lor Si) in which the | electrical conduct- ivity is totally governed by elect- rons thermally excited fromthe valence bond to the | |conduction bond are | |ealled intrinsic | | semiconductors. 2| They have equal number of densiti of free electrons and holes ie. th, = My Formation conductor of Si or Ge doped with trivalent impurity atoms of B, All or in is called a p-type semiconductor. |Ithas more density of [holes than density of free electrons ic. >> m, (id Ina p-type semiconductor, the trivalent impurity atom shares its three valence electrons with the three tetravalent host atoms while the fourth bond remains. unbounded. The impurity atom as a whole is electrical neutral. Hence the p-type semiconductor is also neutral Q.2 What is Zener diode? Give its symbol. Ans : Zener diode : A specially designed diode which can operate in reverse breakdown region without being damaged are called Zener diode. ‘+ Zener diode with different breakdown voltages (3 V to 200 V) can be obtained by changing the doping levels of P and n side + Zener diode is made up of heavily doped p and n type semiconductor. «+ Pandn sides of diode are heavily doped by acceptor. and donar impurity respectively and are denoted by symbols p* and n*Due to high doping densities of p and n regions, the depletion layer is small (10 m) When a large reverse field is applied across such a diode,due to small depletion region very high electric field( 10” V/m) Q.3 Explain how a depletion region is formed in a junction diode. (Delhi 2011) Answer: ‘As soon as a p-n junction is formed, the majority charge carriers begin to diffuse from the regions of higher concentration to the regions of lower concentrations. Thus the electrons from the n-region diffuse into the p-region and where they combine with the holes and get neutralised. Similarly, the holes from the p-region diffuse into the n-region where they combine with the electrons and get neutralised. This process is called electron-hole recombination. juncton Ve Ficttious battery de 2 Oe 9/19 O Oe 229 gicieiog ee 2eegiicieee9 999 glI1g gee type + t n-type p-region near the junction is left with immobile -ve ions and n-region near the junction is left with +ve ions as shown in the figure. The small region in the vicinity of the junction which is depleted of free charge carriers and has only immobile ions is called the depletion layer. In the depletion region, a potential difference VB is created, called potential barrier as it creates an electric field which opposes the further diffusion of electrons and holes. (i) In forward biased, the width of depletion region is decreased. (ii) In reverse biased, the width of depletion region is increased.