AMERICAN INTERNATIONAL UNIVERSITY–BANGLADESH

(AIUB)
Faculty of Engineering (EEE)
ELECTRONIC DEVICES LAB
Spring -2023-2024
Section: J
Group-3

LAB REPORT ON
Determination of Characteristic Curve of a Diode

Supervised By
MD. ALOMGIR KABIR

Submitted By
Name Id
Istiaque Mahbub Isti 22-49167-3
Eshika Rani Pall 22-49200-3
Khadija Akter 22-48295-3
Ibrahim Khalil Ullah Midul 22-48301-3

Date of Experiment:
23, January,2024
Date of Submission:
30, January,2024
Title: Determination of Characteristic Curve of a Diode.
Abstract: A diode is one of the simplest electronic devices. It is a unidirectional device.
A diode does not behave linearly with respect to applied voltage and has an exponential
I-V relationship. There are two operating regions for the diode, reverse biased region,
and forward-biased region. The diode is simply a semiconductor pn junction. In
addition to being applied as a diode, the pn junction is the basic element of bipolar-
junction transistors (BJTs) and field-effect transistors (FETs).
Aim Of Objective:
The aim of the characteristic curve of a Diode is to show the relationship between the
voltage applied to the Diode and the current that the current that flows through it.This
curve is essential for understanding and predicting the behavior of Diodes in circuits.
Theory:
Semiconductors: Diodes are typically made from semiconductors materials such as
silicon (Si) or germanium (Ge). Semiconductors have a conductivity between that of
conductors and insulators. Silicon is the most widely used semiconductor material due
to its abundance and stable properties.

Doping: Semiconductor materials are doped with impurities to alter their electrical
properties. Adding impurities creates an excess of the formation of n-type and p-type
semiconductors.
PN Junction Diode:
Structure: The most common type of diode is the PN junction diode, formed by
joining a region of N-type semiconductor with a region of P-type semiconductor.
Depletion Region: At the junction between the N-type and P-type regions, there's a
depletion region where mobile charge carriers (electrons and holes) are pushed away
due to the diffusion of majority carriers and the formation of an electric field.
Forward Bias: When a positive voltage (higher potential at the anode, lower at the
cathode) is applied across the diode, it reduces the width of the depletion region,
allowing current to flow easily through the diode. This condition is known as forward
bias.
Reverse Bias: When a negative voltage is applied across the diode (higher potential at
the cathode, lower at the anode), it widens the depletion region, making it difficult for
current to flow. This condition is known as reverse bias.
Diode Characteristics:
Forward Bias Characteristics: Under forward bias, a diode exhibits low resistance
and allows significant current flow, characterized by a nearly constant voltage drop
across it (typically around 0.7 volts for silicon diodes).
Reverse Bias Characteristics: Under reverse bias, a diode blocks current flow and
exhibits very high resistance, except for a small reverse current known as reverse
saturation current.
Voltage-Current Relationship: The voltage-current relationship of a diode can be
described by the Shockley diode equation, which accounts for the exponential
dependence of diode current on voltage.

Equipment:
1. Diode
2. 10 k Resistance
3. Project Board
4. DC Power Supply
5. Multimeter
Experimental Procedure:
1. The actual value of the 9.91K resistor was measured.
2. The components except the power supply were connected as shown in the figure.
3. The DC power supply was turned on and the voltage across its two terminal was
measured and fixed at 0V. Then the power supply was turned off.
4. The power supply was connected and turned on. Before powering on, it was remembered
that the power control knob should have been at minimum position.
5. The supply voltage was varied in a 0.5V step and the voltage across the diode V D and the
voltage across the resistor were measured and the results were recorded in the table.

Table:

Vin VD VR Id=VR/
(9.91K)
0V 0.58mV 0 0A

0.1 161mV 0.1mV 0.1A

V
0.2 250mV 8.4mV 0.848A
V
0.3 306.4m 31.1mV 3.138A
V V
0.4 352.5m 102.5m 11.264
V V V A
0.5 378.4m 205.4m 20.727
V V V A
0.6 386.4m 253.5m 25.56A
V V V
0.7 0.4V 380.7m 38.416
V V A
0.8 0.408V 0.471V 47.528
 V A
0.9 0.414V 0.568V 57.316
V A
1V 0.417V 0.620V 62.563
A
1.2 0.429V 0.843V 85.656
V A

Analysis:
When the voltage across resistor VR= 0V ;
Id=0 V /9,91k =0A
When the voltage across resistor VR= 0.1mV ;
Id=0.1 mV /9,91k =0.1A
When the voltage across resistor VR= 8.4mV ;
Id=8.4 mV /9,91k =0.845A
When the voltage across resistor VR= 31.1mV ;
Id=31.1 mV /9,91k =3.138A
When the voltage across resistor VR= 102.5mV ;
Id=102.5 mV /9,91k =11.264A
When the voltage across resistor VR= 205.4mV ;
Id=205.4 mV /9,91k =20.727A
When the voltage across resistor VR= 253.5mV ;
Id=253.5 mV /9,91k =25.56A
When the voltage across resistor VR= 380.7mV;
Id=380.7mV/9,91k =38.416A
When the voltage across resistor VR= 0.471V;
Id=0.471V/9,91k =47.528A
When the voltage across resistor VR= 0.568V;
Id=0.568V/9,91k =57.316A
When the voltage across resistor VR= 0.620V ;
Id=0.620V/9,91k =62.563A
When the voltage across resistor VR= 0.843V ;
Id=0.843V/9,91k =85.656A

Smiulation
Discussion and Conclusion: The objective of this experiment was to learn about the
characteristics of a diode which was fulfilled. Every diode has its own peak inverse
voltage and threshold voltage which theory was learned in this experiment. In the
measured values graph, it's visible that the Diode voltage at almost 0.4v, and suddenly
the rate of current is noticeably increased. This sudden current increase at a voltage
occurs when the threshold voltage is passed. There is also very little error in this
phenomena related to the simulated values. However, all the values were taken
precisely. It can be state that the error occurs because of the electronics have their
error.