SPP4435W

P-Channel Enhancement Mode MOSFET

DESCRIPTION APPLICATIONS
The SPP4435W is the P-Channel logic enhancement z Power Management in Note book
mode power field effect transistors are produced using z Portable Equipment
high cell density , DMOS trench technology. z Battery Powered System
This high density process is especially tailored to z DC/DC Converter
z Load Switch
minimize on-state resistance.
z DSC
These devices are particularly suited for low voltage z LCD Display inverter
application , notebook computer power management and
other battery powered circuits where high-side
switching .

FEATURES PIN CONFIGURATION(SOP – 8P)

‹ -30V/-9.2A,RDS(ON)= 24mΩ@VGS=- 10V
‹ -30V/-7.0A,RDS(ON)= 30mΩ@VGS=-4.5V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOP – 8P package design

PART MARKING

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 SPP4435W
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin Symbol Description
1 S Source
2 S Source
3 S Source
4 G Gate
5 D Drain
6 D Drain
7 D Drain
8 D Drain

ORDERING INFORMATION
Part Number Package Part Marking
SPP4435WS8RGB SOP- 8P SPP4435W
※ SPP4435WS8RGB : 13”Tape Reel ; Pb – Free; Halogen – Free

ABSOULTE MAXIMUM RATINGS

(TA=25℃ Unless otherwise noted)
Parameter Symbol Typical Unit

Drain-Source Voltage VDSS -30 V

Gate –Source Voltage VGSS ±20 V

TA=25℃ -10.0
Continuous Drain Current(TJ=150℃) ID A
TA=70℃ -7.0

Pulsed Drain Current IDM -50 A

Continuous Source Current(Diode Conduction) IS -2.3 A

TA=25℃ 2.8
Power Dissipation PD W
TA=70℃ 1.8
Operating Junction Temperature TJ -55/150 ℃
Storage Temperature Range TSTG -55/150 ℃
Thermal Resistance-Junction to Ambient RθJA 70 ℃/W

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 SPP4435W
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)

Parameter Symbol Conditions Min. Typ Max. Unit

Static
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -30
V
Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250uA -0.7 -1.6
Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA
VDS=-24V,VGS=0V -1
Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V uA
-5
TJ=55℃
On-State Drain Current ID(on) VDS= -5V,VGS =-4.5V -40 A
VGS=-10V,ID=-9.2A 0.020 0.024
Drain-Source On-Resistance RDS(on) Ω
VGS=-4.5V,ID=-7.0A 0.025 0.030
Forward Transconductance gfs VDS=-10V,ID=-9.0A 24 S
Diode Forward Voltage VSD IS=-2.3A,VGS =0V -0.8 -1.2 V
Dynamic
Total Gate Charge Qg 20 30
VDS=-15V,VGS=-10V
Gate-Source Charge Qgs 3.5 nC
ID= -9.0A
Gate-Drain Charge Qgd 4.8
Input Capacitance Ciss 1850
VDS=-15V,VGS=0V
Output Capacitance Coss 450 pF
f=1MHz
Reverse Transfer Capacitance Crss 335
td(on) 20 30
Turn-On Time
tr VDD=-15V,RL=15Ω 20 30
ID≡-1.0A,VGEN=-10V nS
td(off) RG=6Ω 75 110
Turn-Off Time
tf 40 80

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 SPP4435W
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS

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 SPP4435W
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS

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 SPP4435W
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS

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 SPP4435W
P-Channel Enhancement Mode MOSFET
SOP- 8 PACKAGE OUTLINE

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 SPP4435W
P-Channel Enhancement Mode MOSFET

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SYNC Power Corporation
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