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ECE3044

Nill

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16 views3 pages

ECE3044

Nill

Uploaded by

chintujashvanth2006
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Roll No

PRESIDENCY UNIVERSITY
BENGALURU

SCHOOL OF ENGINEERING
SUMMER TERM EXAMINATION – AUGUST 2024

Semester : Summer Term Date : 05-08-2024


Course Code : ECE3044 Time : 01:00 P.M. – 04:00 P.M.
Course Name : IC Fabrication Max Marks :100
Technology
Program :B. Tech. (ECE) Weightage :50%

Instructions:
(i) Read all questions carefully and answer accordingly.
(ii) Question paper consists of 3 parts.
(iii) Scientific and non-programmable calculator are permitted.
(iv) Do not write any information on the question paper other than Roll Number.

PART A
ANSWER ANY 3 QUESTIONS 3Q X
5M = 15 M
Diffusion is the net movement of anything (for example, atoms,
ions, molecules, energy) generally from a region of higher
1 (CO 1) [Knowledge]
concentration to a region of lower concentration. State and explain
Fick’s first law of diffusion.
Etchings were first produced around 1500 in southern Germany.
These early German etchers made use of iron plates, stronger than
2 (CO 2) [Knowledge]
copper yet susceptible to rust and harder to work. Define Etching
in IC Fabrication process using suitable diagram and example.
Epitaxial growth is broadly defined as the condensation of gas
3 precursors to form a film on a substrate. Write the basic chemical (CO 1) [Knowledge]
reaction in the epitaxial growth processes of pure silicon.
Oxidation is a process in which a chemical substance changes
because of the addition of oxygen.
4 (CO 2) [Knowledge]
(i)What is the purpose of oxidation?
(ii) State chemical reactions involved in oxidation process.
Deal and Grove model assumes that the oxidation reaction occurs
at the interface between the oxidation layer and the substrate
5 (CO 2) [Knowledge]
materials, rather than between the oxide and the ambient gas.
Define the function of τ.

PART B
ANSWER ANY 2 QUESTIONS 2Q X
20M = 40M
In order to calculate the oxide growth rate, we define N1 as the
number of oxidant molecules incorporated into a unit volume of the
oxide layer. If oxygen is the reactant then N1 = 2.2 x /
(CO [Comprehensio
6 because the density of SiO2 is 2.2 x / . With an initial
2) n]
condition of (t = 0) = , analyze the rate of change of oxide
thickness with respect to oxidation times. Use basic model of
thermal oxidation of Silicon under steady state.
In wet oxidation of silicon at 950 deg Celsius, the following data are
obtained:

(CO [Comprehensio
7
2) n]
Show how to graphically determine the linear and parabolic rate
constants from these experimental data. Assume that τ = 0 for wet
oxidation.
Chemical vapor deposition technology produces high-quality
material building blocks that underpin various fields of applications.
(CO [Comprehensio
8 Apparatus in which the substrate is brought into contact with the
2) n]
solution. Identify the apparatus used for this and explain in brief
using required diagram.

PART C
ANSWER ANY 3 QUESTIONS 3Q X
15M=45M
Routine evaluation of ingots or boules involves measuring the
resistivity, evaluating their crystal perfection, and examining their
mechanical properties, such as size and mass. Its necessity is
9 throughout the fabrication of integrated circuits but its primary use (CO 2) [Application]
is to serves as mask against implant or diffusion atoms into silicon.
Relate the oxide thickness with respect to time using relevant
model and equations.

The regions of wafer that got exposed to UV light generates a


pattern on the wafer.
1. Analyze the method and complete the overall process.
10 2. If the gap spacing between the resist and the mask is 40um and (CO 3) [Application]
diameter of the source is 3mm and distance of source from mask is
50 cm.
Calculate penumbral effect (§).
Fabrication is a value added process that involves the construction
11 of machines and structures from various raw materials. Explain (CO 2) [Application]
PMOS Fabrication steps using suitable diagram.
12 Consider the following cross section that is to be doped with (CO 3) [Application]
Arsenic using ion implantation to form the source/drain regions.
Assume the Si substrate is initially doped with B with a uniform
concentration of 10^16 cm-3 .
(a) Assume that the SiO2 and polysilicon layers have the same ion
stopping power as Si, and that SiO2 thickness is 60 nm. What are
the ion implantation dose and energy required to achieve a peak
concentration of 10^19 cm-3 of As at the SiO2 and Si interface in
the source/drain regions (i.e., y = 60 nm)?
(b) Calculate the junction depth of the source/drain regions.

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