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EC/EE/IN Hinglish
Work Book - 02
Subject : Analog Electronics
Topic : BJT Circuits

1. The common-emitter current gain of the transistor is β 3. Assume Is = 5 × 10–16 and the circuit shown below is
= 75. The voltage VBE in ON state is 0.7 V. The value at the edge of active region. What is the approximate
of VEC is _________ volts. value of voltage VS (in volts) ?

4. Consider the circuit given in figure, assume

Is = 3 × 10–16 A. What is the value of VB (in mV) that
makes the circuit to operate at the edge of saturation
2. The common-emitter current gain of the transistor is β region ?
= 75. The voltage VBE in ON state is 0.7 V. The value
of VC is _________ (in volt).

5. For the circuit shown is figure, given that β = 100, Is =

7 × 10–16 and R1 = 10 k, IC = 1 × 10–3 A. What is the
value of VB (in mV) ?
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6. For the given circuit VB = VC and β = 50. The value of 10. In the given circuit if β = 50, the power dissipated in
VB is ____ volts. the transistor is ___________ mW.

7. For the given circuit VCB = 0.5 V and β = 100. The

value of IQ is _____ mA. 11. For the circuit shown below α = 0.992. The value of
voltage VBC is _________ volts.

8. For the given circuit emitter voltage is VE = 2V. The

value of α is ___________
12. For the transistor shown below, β = 30 and VCEQ = 6
V. The value of V1 is ________ volt.

9. For the given transistor, β = 50. The value of voltage

VEC is ________ volts.
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13. In the circuit shown below VCE(out) = 0.2 V, α = 0.99, 16. For the circuit shown below, let β = 60. The value of
IB = 20 μA. The value of VCE is ______ volts. VECQ is _______ volts.

14. A silicon transistor with VBE(sol) = 0.8 V, β = hFE = 17. Consider the circuit shown in figure below, given
100, VCE(sol) = 0.2 V is used in the circuit shown. The that IS1 = 2IS2 = 4 × 10–16 A, β1 = β2 = 100, and I1 = 1
minimum value of RC for which the transistor remain mA. What is the value of VB voltage (in mV)?
in saturation, is ________ k.

18. The two transistor in figure below are identical. If β

= 25, the current IC2 is _________ μA.

15. For the transistor in the circuit shown below, β = 100.

The voltage VB is _______ volts.

19. In the shunt regulator shown below, the VZ = 8.2 V

and VBE = 0.7 V. The regulated output V0 is _______
volts.
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20. In the series voltage regulator circuit shown below The output current I0 is _____ μA.
VBE = 0.7 V, β = 50, VZ = 8.3 V. The output voltage
V0 is ________ volts. 24. The transistor used in the circuit shown below has
β = 30 and ICBO is negligible.

21. In the regulator circuit shown below VZ = 12 V, β =

50, VBE = 0.7 V. The Zener current is ______ mA.

If the forward voltage drop of diode is 0.7 V, then the

current through collector will be _______ mA.

25. The transistor circuit shown uses a silicon transistor

with VBE = 0.7, IC ≈ IE and a dc current gain of 100.
The value of V0 is ______ volts.
22. In the bipolar current source of figure shown below,
the diode voltage and transistor base - emitter voltage
are equal.

If base current is neglected, then collector current is

_________ mA. 26. The three - terminal linear voltage regulator is
connected to a 10  load resistor as shown in the
23. In the current mirror circuit shown below the figure. If Vin is 10 V, what is the power dissipated in
transistor parameters are VBE = 0.7 V, β = 50 and the the transistor (in watts) ?
Early voltage is infinite. Assume that transistors are
matched.
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27. Two perfectly matched silicon transistor are

connected as shown in the figure assuming the β of
the transistors to be very high and the forward
voltage drop in diodes to be 0.7 V, the value of
current I is _________ mA.

What is the maximum value of RC (in ) such that

the transistor remains in the active mode ?

31. For the circuit given below, the value of S(ICO) is

28. Two perfectly matched silicon transistor are

connected as shown in figure. The value of the
current I is __________ mA.

29. In the given circuit, Q1 and Q2 are identical and

operates in the active mode such that IC1 = 10IC2 and
VT = 26 mV the value of V1 – V2 is ________ mV.
32. For the given, circuit, the value of collector voltage
(VC) is ________ volts.

30. Consider the circuit shown in figure below. Given the

transistor parameters IS = 5 × 10–17 Am, VBE = 800
mA and β = 100, Vthermal = 26 mV.

33. Consider the common - base circuit shown in figure.

For the transistor, assume α = 0.9920. The value of
base - collector voltage (VBC) is ______ volts.
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34. The transistor circuit and its dc load line in shown in

figure a and b.

For the transistor, β = 120. What is the value of

emitter resistance (RE) Q - point (in k)?
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Answer Key
1. (4.1) 18. (23.2)
2. (1.49) 19. (8.9)
3. (0.760) 20. (15)
4. (755) 21. (36.17)
5. (0.8276) 22. (2.32)
6. (1.19) 23. (962)
7. (0.909) 24. (5.36)
8. (0.968) 25. (4.67)
9. (6.07) 26. (2.4)
10. (3.87) 27. (3.6)
11. (4.47) 28. (4.3)
12. (3.97) 29. (59.86)
13. (0.2) 30. (1041)
14. (4.67) 31. (11.08)
15. (4.69) 32. (3.4)
16. (4.94) 33. (4.47)
17. (817) 34. (0.496)

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