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BJT and Characteristics

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0% found this document useful (0 votes)
12 views22 pages

BJT and Characteristics

Uploaded by

gopikrishna k
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Bipolar Junction Transistor

(BJT)
Fundamentals of Transistor

2
Fundamentals of Transistor

Lecture 1 3
Structure of Transistor
Terminals of a BJT
• Emitter (E)
• Base (B)
• Collector (C)

What is biasing?
Setting an initial working condition for the transistor to function by
applying a fixed voltage.

4
Biasing a transistor

Lecture 1 5
On biasing a transistor
➢ The current will flow through different parts of the BJT
➢ Job of emitter, base, and collector

6
Transistor parameters
• Most electron from emitter reaches collector
• Less than 1% fail to reach collector
• Basic current equation of BJT is IE = IB+IC , where IB<<IC , IE=IC
• Alpha and beta current gain
IC 200 to 300 for low power and
dc =
IB 20 to 100 for high power

(a) Conventional current flow in npn ; (b) electron flow; (c) currents in pnp
7
Problems
1. A transistor has a current gain of 150 and a base current
of 30 µA. What is the collector current?
Solution
IC = βdc * IB,
IC= 150*30µ = 4500µA = 4.5mA

2. The collector current is 10 mA, and the base current is 0.1


mA. What is the alpha dc?
Solution
Total current IE=10+0.1=10.1A
αdc= 10/10.1 = 0.9901

8
Subscript terminology
• The voltage referred in the circuit of a BJT has 2 forms
• When the subscript are the same, they refer to the voltage applied
• When the subscript are different, they refer to the voltage developed across
the diodes of the transistor
• Third form of terminology which is used in analysis VC , VB , and VE , they
represent the terminal voltage of the transistor
• VCE = VC - VE
• VCB = VC - VB
• VBE = VB - VE

9
Characteristics curve (CE Configuration)

IC

IB
Base curve

➢ Cutoff region
➢ Saturation region
➢ Active region
➢ Breakdown region

Collector curve
10
Few terms to know

VBB − VBE
IB =
RB

VCE = VCC − IC RC
Power Dissipation PD = VCE IC

11
Problems
1. A transistor circuit has a collector supply voltage of 20 V, a
collector resistance of 1.5 kΩ, and a collector current of 6 mA.
What is the collector-emitter voltage?
Solution
VCC= 20V, RC=1.5kΩ, IC=6mA
VCC = ICRC+VCE
So; 20 = 1.5x10^3x6x10^-3 + VCE
Therefore; VCE = 11V

12
Configurations
• Common Emitter configuration
• Common Base configuration
• Common Collector configuration

13
Common Emitter configuration

• Input is forward biased


• Output is reverse biased
14
Input and Output Characteristics of CE Configuration

15
Common base Configuration

• Input is forward biased


• Output is reverse biased

16
Input and Output Characteristics of CB Configuration

17
Common Collector Configuration

• Input is forward biased


• Output is reverse biased
18
Input and Output Characteristics of CC Configuration

19
Comparison between the CB ,CE and CC

20
Application : Common Emitter Amplifier

21
Common Emitter amplifier configuration is widely used due to its
advantage of moderate current and voltage gain

• It is used in Audio Amplifiers


• It is used in Microphones, Radio, and Music Players
• It is used in the Frequency generation circuit to increase the
strength of the input signal.
• It is used to increase the speed of Fans, Motors, and Timer
circuits.

22

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