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DEPARTMENT OF ECE GNITC

UNIT-5

SPECIAL PURPOSE SEMICONDUCTOR DEVICES

SYLLABUS:
Zener Diode – Characteristics, Zener diode as Voltage Regulator, Principle of Operation, SCR,
Tunnel diode, UJT, Varactor Diode, Photodiode, Solar Cell, LED, Schottky diode.

COURSE OUTCOME:
By the end of this chapter, students will be able to understand the working of different types of
semiconductor diodes

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DEPARTMENT OF ECE GNITC

ZENER DIODE (Example Q: Explain the construction and working of a Zener diode)

• The Zener diode has a heavier doping concentration than a normal P-N junction diode.
Hence, it has a very thin depletion region.
• Zener diode allows current flow in both forward and reverse directions, unlike a
standard P-N Junction diode which allows current flow only in one (Forward) direction.
• Current flows in a Zener diode in reverse bias only after breakdown voltage.

• A Zener diode is mainly used in reverse bias configuration. It provides a stabilized

voltage for the protection of circuits from overvoltage.
Operation of Zener diode:

• A Zener diode operates within the normal range of forward bias, with a TURN-ON
voltage between 0.3V and 0.7V.
• In reverse bias, initially a small leakage current flows in the diode.
• As the reverse voltage increases to the breakdown Voltage (VZ), current flow increases
to a maximum decided by the series resistor and then stabilizes to remain constant over
a range of applied voltages.
• Both Avalanche and Zener Breakdown phenomena happen in a Zener diode that cancels
out each other making Zener diodes rated at around 5.5V and stable over a wide range
of temperature requirements.
Characteristics of Zener Diode:

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DEPARTMENT OF ECE GNITC

• The shaded characteristic curve illustrates the normal operating range for a Zener diode,
with the forward characteristics being just like a normal diode.
• The circuit is placed in reverse bias, operating in the Zener voltage.
APPLICATION OF ZENER DIODE: (Example Q: Explain how Zener diode works as
a Voltage Regulator)

Zener Diode Voltage Regulator

• The Zener diode is used as a Shunt voltage regulator for regulating voltage across small
loads.
• The Zener diode is connected parallel to the load to make it reverse bias, and once the
Zener diode exceeds knee voltage, the voltage across the load will become constant.

• Current through the diode increases when the voltage across the diode tends to increase
which results in the voltage drop across the resistor.
• Similarly, the current through the diode decreases when the voltage across the diode
tends to decrease.
• Here, the voltage drop across the resistor is very less, and the output voltage results
normally.
• The value of the series resistor is written as RS = (VL − VZ) IL.

SILICON CONTROLLED RECTIFIER (SCR) (Example Q: With the help of its

characteristics explain the working of an SCR.)

• It is a four-layered PNPN device and is a prominent member of the thyristor family.

• It consists of three diodes connected back-to-back with a gate connection.
• It is widely used as a switching device in power control applications.
• It can switch ON for a variable length of time and delivers the selected amount of power
to load.
• It can control loads, by switching the current OFF and ON up to many thousand times
a second.
• Hence it possesses the advantage of RHEOSTAT and a switch with none of their
disadvantages
Construction of SCR

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DEPARTMENT OF ECE GNITC

• It is constructed by connecting two pairs of P and N-type semiconductors back-to-

back

Block Diagram Representation and Symbol of SCR

• The terminal connected to the outer region p is called Anode, and the terminal
connected to the outer region n is called Cathode.
• Terminal that is connected to the inner p region is called Gate. The gate terminal is
usually kept near the p-type semiconductor near to cathode terminal.
Operation of SCR:

• An SCR will conduct when all its three junctions J1, J2, and J3 are forward biased.
• An SCR can be operated in three different modes Forward Blocking, Reverse Blocking,
and Forward Conducting Modes.
Forward Blocking Mode:

• When the anode is positive with respect to the cathode with the gate circuit open, the
SCR is said to be in forward blocking mode.
• Junctions J1 and J3 will be forward biased while Junction J2 will be reverse biased.
• A very small amount of leakage current will flow through SCR and the SCR is said to
be OFF (non-conducting).
Reverse Blocking Mode:

• When Anode is negative with respect to the cathode, it is said to be in Reverse Blocking
Mode.
• Junction J1 and J3 will be reverse biased and junction J2 will be forward biased.
• No significant amount of current will flow through SCR and thus the SCR can be
considered as non-conducting.
Forward Conducting Mode:

• When the Anode is positive with respect to the cathode and when a positive voltage is
applied to the gate terminal then the SCR will be in the Forward Conducting Mode.

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DEPARTMENT OF ECE GNITC

• All three junctions J1, J2, and J3 will be forward biased and the SCR will conduct.

Definitions Related to SCR: (Example Q: Define Breakover voltage, Peak Reverse

Voltage, Holding Current, Forward current rating and Circuit fusing rating
of SCR )

1. Breakover Voltage
• It is the minimum forward voltage with the gate being open, at which SCR starts
conducting heavily i.e., turned ON.
• If the break-over voltage of an SCR is 200 V, it means that it can block a forward voltage
(i.e., SCR remains open) as long as the supply voltage is less than 200 V.
• If the supply voltage is more than this value, then SCR will be turned ON.
2. Peak Reverse Voltage (PRV)

• It is the maximum reverse voltage (cathode positive w.r.t. anode) that can be applied to
an SCR without conducting in the reverse direction.
• PRV is an important consideration while connecting an SCR in an a.c. circuit. During
the negative half of a.c. supply, reverse voltage is applied across SCR.
• If PRV is exceeded, there may be avalanche breakdown and the SCR will be damaged
if the external circuit does not limit the current.

3. Holding Current

• It is the maximum anode current, with the gate open, at which SCR is turned OFF from
ON condition.
• When SCR is in the conducting state, it cannot be turned OFF even if the gate voltage
is removed.
• The only way to turn off or open the SCR is to reduce the supply voltage to almost zero
at which point the internal transistor comes out of saturation and opens the SCR.
• The anode current under this condition is very small (a few mA) and is called the
holding current.

4. Forward Current Rating

• It is the maximum anode current that an SCR is capable of passing without destruction.
• Every SCR has a safe value of forward current which it can conduct.
• If the value of the current exceeds this value, the SCR may be destroyed due to intensive
heating at the junction.

5. Circuit Fusing (I2t) Rating

• It is the product of square forward surge current and the time of duration of the surge
i.e.,

Circuit fusing rating =I2t

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DEPARTMENT OF ECE GNITC

• The circuit fusing rating indicates the maximum forward surge current capability of
SCR.

Volt-Ampere Characteristics of SCR

TUNNEL DIODE (Example Q: What is tunneling? With the help of energy band
diagrams explain how the tunneling phenomenon happens in a tunnel diode.)

• A tunnel diode (also known as an Esaki diode) is a type of semiconductor diode that
has effectively “negative resistance” due to the quantum mechanical effect called
tunneling.

Symbol of Tunnel diode

• Tunnel diodes have a heavily doped PN junction that is about 10 nm wide.

Depletion Region Widths of Tunnel and a Normal PN diode

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DEPARTMENT OF ECE GNITC

• A tunnel diode is one of the most commonly used negative conductance devices. In the
current-voltage characteristics of the tunnel diode, we can find a negative slope region
when a forward bias is applied.

Working of Tunnel Diode

• The heavy doping of a tunnel diode results in a broken band gap, where conduction
band electron states on the N-side are more or less aligned with valence band hole states
on the P-side.

• Even when no voltage is applied to the diode some electrons tunnel from the conduction
band of the n-region to the valence band of the p-region when temperature increases
and due to heavy doping.
• Similarly, holes will move from the valence band of the p-region to the conduction band
of the n-region.
• Finally, the net current will be zero since equal numbers of electrons are holes are
flowing in opposite directions.

• When a small voltage, that has a lesser value than the built-in voltage of the depletion
layer, is applied to the tunnel diode, there is no flow of forward current through the
junction.
• Nevertheless, a minimum number of electrons from the conduction band of the n region
will start tunneling to the valence band in the p region.

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DEPARTMENT OF ECE GNITC

• This movement creates a small forward-biased tunnel current. When a small voltage is
applied, tunnel current starts to flow.

• When the amount of voltage applied is increased, the number of free electrons
generated at the n side and holes at the p side is also increased.
• Due to the increase in the voltage, overlapping between the bands will also get
increased.
• Maximum tunnel current flows when the energy level of the n-side conduction band
and the energy level of a p-side valence band become equal.

• A further increase in the applied voltage will cause a slight misalignment of the
conduction band and valence band.
• Still, there will be an overlap between the conduction band and the valence band. The
electrons move from the conduction band to the valence band of the p region.
• Therefore, this causes a small current to flow. Hence, the tunnel current starts
decreasing.

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DEPARTMENT OF ECE GNITC

• The tunneling current will become zero when the applied voltage is increased more to
the maximum.
• At this voltage level, the valence band and the conduction band do not overlap. This
makes the tunnel diode operate the same as a PN junction diode.

• When the applied voltage is more than the built-in potential of the depletion layer the
forward current starts flowing through the tunnel diode.
• In this condition, the current portion in the curve decreases when the voltage increases
and this is the negative resistance of the tunnel diode.
• Such diodes operating in negative resistance region is used as amplifier or oscillator.

V-I Characteristics of Tunnel Diode

• In forward bias, because of heavy doping, conduction happens in the diode.

• The maximum current that a diode reach is Ip when the voltage applied is Vp.
• The current value decreases when more amount of voltage is applied. The current keeps
decreasing until it reaches a minimal value.

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DEPARTMENT OF ECE GNITC

• The small minimal value of current is Iv. From the above graph, it is seen that from
point A to B current reduces when voltage increases.
• That is the negative resistance region of the diode. In this region, the tunnel diode
produces power instead of absorbing it.
Applications of Tunnel Diode

• Tunnel diode can be used as a switch, amplifier, and oscillator.

• Since it shows a fast response, it is used as a high-frequency component.
• Tunnel diode acts as a logic memory storage device.
• They are used in oscillator circuits, and in FM receivers. Since it is a low-current device,
it is not used more.

UNI-JUNCTION TRANSISTOR (UJT) (Example Q: Explain the working of a UJT.)

• Unijunction Transistor is a semiconductor switching device having 2 layers and 3

terminals and is abbreviated as UJT.
• It is called so because of the presence of only one junction. It has the ability to limit
large power with a small input signal and is also known as a double-base diode.

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DEPARTMENT OF ECE GNITC

Symbol of UJT

Construction of UJT

• UJT consists of a lightly doped N-type silicon bar in which a P-type material is diffused
thus producing a PN junction.
• It consists of two ohmic contacts at the end of the bar which are labeled as Base 1 (B1)
and Base 2 (B2).
• The Emitter region (E) is closer to B2 in order to have the optimum electrical
characteristic.

Working of UJT

• Consider the equivalent circuit of UJT shown below:

• Here, RB1 is variable resistance, due to variation in the resistance with changes in
emitter current.
• The two resistors of the circuit together constitute the total resistance which is the
resistance between B2 and B1 where the emitter is kept open known as Inter-base
resistance RBB.
• So, we can write,

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DEPARTMENT OF ECE GNITC

RBB = RB1 + RB2

• Normally the value of RB1 is greater than that of RB2.

• When a voltage VBB is applied between the two base terminals B1 and B2, the voltage
at point A will be,

𝑹𝑩𝟏
𝑽𝑨 = 𝑽𝑩𝑩 × (𝑹 ) (or) 𝑽𝑨 = 𝜼 ∙ 𝑽𝑩𝑩
𝑩𝟏 +𝑹𝑩𝟐

𝑹𝑩𝟏
• Where 𝜼 = (𝑹 ) is termed as the intrinsic stand-off ratio and its value is less
𝑩𝟏 +𝑹𝑩𝟐
than 1.
• When no Emitter voltage is supplied to the circuit the diode gets reverse biased. Now
including the barrier potential (VB) of the diode, the total reverse biased voltage will
become

VA + VB = ηVBB + VB

• VB value will be equal to 0.7 V if the diode is made of silicon semiconductor

• If the Emitter potential that was previously 0, is increased by a small value and it
becomes equal to ηVBB it will cause the emitter current IE to become 0.
• This prevents no current to flow through the diode because of equal voltage levels.
• If the Emitter potential is increased further, the diode will now get forward-biased.
• This is so because it surpasses the overall reverse-biased potential.
• The Emitter potential that puts the diode in forward biased condition is known as peak
point voltage and is denoted by Vp.
• This allows the Emitter current to flow through RB1 to ground, thus ultimately triggering
the UJT.
• The minimum value of IE to trigger the device is known as the peak point current
of the Emitter terminal denoted by Ip.
• As the diode gets forward biased and starts conduction, the resistance RB1 decreases
quickly.
• This is because while conducting, the forward-biased diode will inject carriers into RB1
region, and reduces the resistance as it depends on the doping level.
• Due to this reduction in resistance, the drop across RB1 also gets reduced ultimately
causing more conduction.
• This will result in greater forward current and the cycle repeats.
• This Emitter current is restricted by the Emitter potential of the circuit.
• Thus, it is said that UJT possesses negative resistance characteristics as with the
increase in emitter current voltage decreases.
• In order to turn off the device, a negative pulse is then needed.

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DEPARTMENT OF ECE GNITC

• As we can see in the figure, IE does not exceed IEo, which is nothing but equivalent to
the leakage current in the reverse direction of BJT.
• However, it is noteworthy that the above-stated condition is for emitter voltage that lies
in the left direction towards the peak point. The region is known as the cut-off region.
• As we have already discussed that conduction starts when the Emitter potential
becomes equal to peak voltage.
• After this the Emitter potential reduces and any further increase in IE, simply shows a
reduction in RB1.
• This is the reason why the device is said to possess negative resistance characteristic
and the region is called negative resistance region.
• After this, a valley point is reached, where the device comes to saturation region with
the additional increase in the Emitter current of the device.

Applications of UJT

• UJT is a device that is used in thyristor triggering.

• It is used in controlling of DC voltage, in the case of overvoltage detection and
measurement of magnetic flux.
• UJTs are used in relaxation oscillator circuitry because of their negative resistance
characteristics.

VARACTOR DIODE (Example Q: What is a Varactor Diode? Explain it’s working

with the help of necessary characteristics.)

• The diode whose internal capacitance varies with the variation of the reverse voltage such
type of diode is known as the Varactor diode.

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DEPARTMENT OF ECE GNITC

• It is used for storing the charge. The varactor diode always works in reverse bias, and it
is a voltage-dependent semiconductor device.
• The voltage-dependent device means the output of the diode depends on their input
voltage.
• The varactor diode is used in a place where the variable capacitance is required, and that
capacitance is controlled with the help of the voltage.
• The Varactor diode is also known as the Varicap, Voltcap, Voltage variable capacitance or
Tuning diode.

Symbol of Varactor Diode

Working of a Varactor Diode

• Varactor diodes are operated under reverse bias due to the fact that the depletion region
that stores the charge in the form of electric filed will be consistent only in reverse bias.
• Expression for the capacitance of varactor diode can be given as
∈𝑨
𝑪𝑻 =
𝑾
Where ε is the permittivity of the semiconductor material
A is the area of the depletion region (PN Junction)
W is the width of the depletion region.
• The capacitance of the varactor diode increases with the increase of n and the p-type
region and decreases with the increases of the depletion region.
• The increase in capacitance means the more charges are stored in the diode.
• For increasing the storage capacity of charge the depletion region (which acts as a
dielectric of the capacitor) of the diode should be kept small.

Characteristics of Varactor Diode

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DEPARTMENT OF ECE GNITC

• The graph shows that when the reverse bias voltage increases the depletion region
increases, and the capacitance of the diode reduces.
Advantages of Varactor Diode

The following are the advantages of the varactor diode.

1. The varactor diode produces less noise as less compared to the other diodes.
2. It is less costly and more reliable.
3. The varactor diode is small in size and less in weight.

PHOTODIODE (Example Q: Explain the construction and working of a

photodiode.)

• The photodiode converts light energy into electric current and find applications in the
receiver of an optical communication system.
• Photodiode is a type of semi conducting device with PN junction. Between the p
(positive) and n (negative) layers, an intrinsic layer is present.
• Photodiodes are operated in reverse bias mode.

Working of a Photodiode:

• Generally, when a light is made to illuminate the PN junction, covalent bonds are ionized.
This generates hole and electron pairs.
• Photocurrents are produced due to generation of electron-hole pairs. Electron hole pairs
are formed when photons of energy more than 1.1eV hits the diode.
• When the photon enters the depletion region of diode, it hits the atom with high energy.
This results in release of electron from atom structure.
• After the electron release, free electrons and hole are produced.

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DEPARTMENT OF ECE GNITC

• In general, an electron will have a negative charge and holes will have a positive charge.
The depletion energy will have a built-in electric field.
• Due to that electric field, electron-hole pairs move away from the junction. Hence, holes
move to anode and electrons move to the cathode to produce photocurrent.
• The photon absorption intensity and photon energy are directly proportional to each
other. When energy of photos is less, the absorption will be more.
• This entire process is known as Inner Photoelectric Effect.

MODES OF OPERATION
Photo diodes can be operated in three different modes
1. Photovoltaic Mode
2. Photoconductive Mode
3. Avalanche Mode
Photovoltaic Mode

• This is otherwise called Zero Bias Mode. When a photodiode operates in low-frequency
applications and ultra-level light applications, this mode is preferred.
• When the photodiode is irradiated by a flash of light, voltage is produced. The voltage
produced will have a very small dynamic range and it has a non-linear characteristic.
Photoconductive Mode

• In this mode, the photodiode will act in reverse biased condition. The cathode will be
positive and the anode will be negative.
• When the reverse voltage increases, the width of the depletion layer also increases. Due
to this the response time and junction capacitance will be reduced.
• Comparatively this mode of operation is fast and produces electronic noise.
Avalanche Diode Mode

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DEPARTMENT OF ECE GNITC

• In this mode, Avalanche Diode operates at a high reverse bias condition. It allows the
multiplication of an Avalanche Breakdown to each photo-produced electron-hole pair.
• Hence, this produces internal gain within photodiode. The internal gain increases the
device response.
Connecting Photodiodes in Circuits

• A Photodiode operates in a circuit in reverse bias. Anode is connected to circuit ground

and cathode to positive supply voltage of the circuit.
• When illuminated by light, current flows from cathode to anode.

V-I Characteristics of Photo Diode

• When there is no light illumination, the reverse current will be almost zero. The minimum
amount of current present is called Dark Current.
• Once when the light illumination increases, the reverse current also increases linearly.

Applications of Photodiodes

• Photodiodes help to provide electric isolation with help of optocouplers.

• Photodiodes are also used in safety electronics like fire and smoke detectors. It is also
used in TV units
• When utilized in cameras, they act as photo sensors.
• Photodiodes are also widely used in numerous medical applications like instruments to
analyze samples, detectors for computed tomography and also used in blood gas
monitors.

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DEPARTMENT OF ECE GNITC

SOLAR CELL (Example Q: What is a Solar Cell? How does it work?)

• Solar cell is also called as photovoltaic cell and this is a device which converts light
energy into electrical energy by using photovoltaic effect.
• Solar cell is basically a normal PN Junction diode.

Symbol of a Solar Cell

Construction of a Solar Cell

• It consists of N-type and P-type semiconductor materials. N-type is highly doped and P-
type is lightly doped.
• Top and bottom is of conducting electrode to collect the current. The bottom is fully
covered with the conductive layer and top layer is not fully covered because the sun rays
should not be fully blocked.
• Since semiconductors are reflective in nature, antireflective coating is used. The whole
arrangement is kept inside a thin glass to avoid mechanical shock.
Working of Solar Cell

• The working of solar cells is based on the photovoltaic effect. It is an effect in which
current or voltage is generated when exposed to light.
• Through this effect solar cells convert sunlight into electrical energy.
• A depletion layer is formed at the junction of the N-type and P-type semiconductor
material.
• When light energy of the sun rays falls on the solar panel, the photons which is the
small bundle of energy whose energy is higher than the energy gap gives energy to the
electrons and holes in the depletion region. T
• The electrons and holes move to the higher level which is the conduction band. The
electrons move towards N type and holes move towards P type and they act as a battery.
• So, this movement of electrons and holes forms the electric current.

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DEPARTMENT OF ECE GNITC

V-I Characteristics of Solar Cell

• Isc is the short circuit current and it is measured by short circuiting the terminals.
• Voc is the open circuit voltage and it is measured when no load is connected.
• Pm is maximum power, Im is maximum current, Vm is maximum voltage and it occurs
at the bend of the characteristic curve

Applications of Solar cell:

• They are used in calculators and in wrist watches
• Used in storage batteries
• Solar Street lights
• Portable power supplies
• Satellites

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DEPARTMENT OF ECE GNITC

LIGHT EMITTING DIODE (LED) (Example Q: Explain the working of an LED.)

• A Light Emitting Diode (LED) is a special type of PN junction diode. The light-
emitting diode is specially doped and made of a special type of semiconductor.
• This diode can emit light when it is in the forward-biased state.
• Aluminium indium gallium phosphide (AlInGaP) and indium gallium nitride (InGaN)
are two of the most commonly used semiconductors for LED technologies.

Symbol of LED
Working of LED:

• When the forward-biased current IF is applied through the p-n junction of the diode,
minority carrier electrons are injected into the p-region, and corresponding minority
carrier electrons are injected into the n-region.
• Photon emission occurs due to electron-hole recombination in the p-region.
• Electron energy transitions across the energy gap, called radiative recombination,
produces photons (i.e., light), while shunt energy transitions, called non-radiative
recombination, produces phonons (i.e., heat).
• When a forward biased current, IF, energizes the p-n junction, it emits light at a
wavelength defined by the active region energy gap, Eg.

SCHOTTKY DIODE (Example Q: Why Schottky diode is known as Hot-carrier

diode? Explain its construction and working.)

• Schottky diode is a metal-semiconductor junction diode that has less forward voltage
drop than the P-N junction diode and can be used in high-speed switching applications.
• Schottky diode is also known as Schottky Barrier diode, surface barrier diode, majority
carrier device, hot-electron diode, or hot carrier diode.
• Schottky diodes are widely used in radio frequency (RF) applications.

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DEPARTMENT OF ECE GNITC

PN Junction Diode

Schottky Diode
• When aluminum or platinum metal is joined with an N-type semiconductor, a junction
is formed between the metal and N-type semiconductor.
• This junction is known as a metal-semiconductor junction or M-S junction.
• A metal-semiconductor junction formed between a metal and n-type semiconductor
creates a barrier or depletion layer known as a Schottky barrier.
• Schottky diode can switch on and off much faster than the p-n junction diode.
• Also, the Schottky diode produces less unwanted noise than the p-n junction diode.
These two characteristics of the Schottky diode make it very useful in high-speed
switching power circuits.
• When sufficient voltage is applied to the Schottky diode, the current starts flowing in
the forward direction.
• Because of this current flow, a small voltage loss occurs across the terminals of the
Schottky diode. This voltage loss is known as voltage drop.

Working of Schottky Diode

Forward Bias:

• If the positive terminal of the battery is connected to the metal and the negative terminal
of the battery is connected to the n-type semiconductor, the Schottky diode is said to be
forward-biased.
• When a forward bias voltage is applied to the Schottky diode, a large number of free
electrons are generated in the n-type semiconductor and metal.
• However, the free electrons in n-type semiconductors and metal cannot cross the
junction unless the applied voltage is greater than 0.2 volts.

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DEPARTMENT OF ECE GNITC

• If the applied voltage is greater than 0.2 volts, the free electrons gain enough energy
and overcome the built-in voltage of the depletion region. As a result, an electric current
start flowing through the Schottky diode.
• If the applied voltage is continuously increased, the depletion region becomes very thin
and finally disappears.

Reverse Bias

• When a reverse bias voltage is applied to the Schottky diode, the depletion width
increases.
• As a result, the electric current stops flowing. However, a small leakage current flows
due to the thermally excited electrons in the metal.

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DEPARTMENT OF ECE GNITC

• If the reverse bias voltage is continuously increased, the electric current gradually
increases due to the weak barrier.
• If the reverse bias voltage is largely increased, a sudden rise in electric current takes
place.
• This sudden rise in electric current causes depletion region to break down which may
permanently damage the device.

V-I Characteristics of Schottky Diode

• The V-I characteristics of Schottky diode is almost similar to the P-N junction
diode. However, the forward voltage drop of Schottky diode is very low as
compared to the P-N junction diode.
• If the applied forward bias voltage is greater than 0.2 or 0.3 volts, an electric current
start flowing through the Schottky diode.
• In the Schottky diode, the reverse saturation current occurs at a very low voltage as
compared to the standard PN diode.

Applications of Schottky diodes

• Schottky diodes are used as general-purpose rectifiers.
• Schottky diodes are used in radio frequency (RF) applications.
• Schottky diodes are widely used in power supplies.
• Schottky diodes are used to detect signals.
• Schottky diodes are used in logic circuits.

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DEPARTMENT OF ECE GNITC

IMPORTANT QUESTIONS

1. Explain the working of the Zener diode as a voltage regulator.

2. What is the purpose of SCR? Explain its working with the help of neat characteristics
3. Discuss in detail the construction and working of a UJT.
4. What is tunneling effect? Why tunnel diodes are called fast switches?
5. Discuss briefly the working of the varactor diode.
6. Write short notes on the construction and working of LEDs.
7. What is a Solar cell? How does it work? Mention its applications.
8. Explain the construction and working of a photodiode.
9. How are Schottky diodes constructed? Explain their working with the help of
characteristics.
10. What is the significance of the negative resistance region in the characteristics of a tunnel
diode?

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DEPARTMENT OF ECE GNITC

OBJECTIVE TYPE QUESTIONS

1. Tunnel diode is also called as [A]

A. Esaki diode B. Zener Diode
C. Solar Cell D. LED

2. One of the following diodes is also known as varicap [C ]

A. Tunnel diode B. LED
C. Varactor diode D. Zener diode

3. Full Form of SCR is [ D]

A. Silicon Center Rectifier B. Silicon Cathode Rectifier
C. Self-Controlled rectifier D. Silicon Controlled Rectifier

4. ____diode converts light energy to electrical current [ A]

A. Photodiode B. LED
C. Schottky diode D. Zener diode

5. Number of PN Junctions in a UJT are ___ [ B]

A. 3 B. 1
C. 2 D. 0

6. One of the following diodes exhibits negative resistance in its characteristics [ C]

A. Zener diode B. PN junction diode
C. Tunnel diode D. LED

7. __ diode can be used as a voltage regulator in reverse bias [ A]

A. Zener diode B. Schottky diode
C. SCR D. Photodiode

8. Photovoltaic cell is the other name of ___ diode [ D]

A. Tunnel diode B. Varactor diode
C. LED D. Solar Cell

9. Abbreviation of LED is__ [ A]

A. Light Emitting Diode B. Light Effective Diode
C. Light Eligible Diode D. Laser Diode

10. Which of the following diodes is a PNPN diode [ B]

A. LED B. SCR
C. Photo Diode D. Zener Diode

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DEPARTMENT OF ECE GNITC

FILL IN THE BLANKS

1. Zener diode is mostly operated in reverse bias.

2. Symbol of a tunnel diode is

3. Schottky diodes are also known as hot-carrier diodes.

4. Symbol of a varactor diode is

5. Symbol of Schottky diode is

6. UJT are used in relaxation oscillators.

7. Full form of UJT is Uni-Junction transistor.

8. Symbol of LED is

9. LED converts electrical energy into light energy

10. SCR has 3 PN junctions.

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