19
19
Q2
1 1 qQ
4 0 x 2 Q
40 4 x 2
q
4
QA = Q q QB = Q
FC
FA
A C B
x1 x2
Ans.2- (c) Electric lines of force never intersect the conductor. -- 1 mark
Hint: They are perpendicular and slightly curved near the surface of conductor.
Ans.3- (a ) 6V/m along -x axis -- 1 mark
Hint: Electric potential V=3x2 E=−dV/dx E=−6x At the point (1,0,2) Electric field
E=6×1=−6V/m
Ans.4- (d) 66.6% increase -- 1 mark
(Hint: Series combination of 2 capacitors of spacing d/2)
Ans.5- (b) 𝐶/2 -- 1 mark
Ans.6- (B) -- 1 mark
Ans.7- (d) Option (a) and (b) -- 1 mark
Ans.8- (c) -- 1 mark
Ans.9- (b) -- 1 mark
Ans.10- (b) -- 1 mark
Hint: In N-type semiconductor impurity energy level lies just below the conduction band.
Ans.11-(b) -- 1 mark
Ans.12-(b) -- 1 mark
Ans.13- (b) -- 1 mark
Hint: Rutherford confirmed the repulsive force on a-particle due to nucleus varies with
distance according to inverse square law and that the positive charges are concentrated
at the centre and not distributed throughout the atom.
Ans.14-(b) -- 1 mark
Ans.15-(c) -- 1 mark
Ans.16-(a -- 1 mark
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[SECTION B]
Ans.17- a) Ey = Eo Sin [kx + ωt] --- 0.5 mark
k = 2π / λ , λ = 0.67 cm -- 0.5 mark
B0 = E0 /c , B0 = 10-7 T 1 mark
Ans.18- (for dia-½, for para & ferro -1 mark each)
OR
II) Though the p-type and n-type semiconductors have excess free electrons --- 2marks
and holes respectively, but they have equal number of fixed positive donor ions and
negative acceptor ions respectively. When a p-n junction is formed, electrons diffuse
from n-region to p-region while holes diffuse from p-region to n-region. As a result, the
n-region near the junction becomes increasingly positive and the p-region becomes
increasingly negative. This sets up a potential barrier across junction which opposes the
further diffusion of electrons and holes across the junction. That is why all the electrons
do not flow from region to p-region
Ans.20- Wave front is locus of all points in which light waves are in same phase ---1 mark
Huygens’ Principle: Each point of the wavefront is the source of a secondary disturbance and
the wavelets emanating from these points spread out in all directions. These travel with the
same velocity as that of the original wavefront. --- 1 mark
Ans.21- Correct & labelled graph -1 mark
Explanation -1mark
[SECTION C]
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Ans.24- i) radio waves produced by oscillating circuits having inductor and capacitor. Used in
radio and TV communication. -------1 mark
ii) infra red rays: produced by all hot bodies treating muscular strains/ solar appliances etc.,
--------- 1 mark
(iii) X rays: produced when high energy electrons bombards metals. To detect fracture in bones/
study crystal structure-- --------1 mark
Ans.25-(a) Characteristics of nuclear forces --------- 2 mark
(i)Nuclear forces are attractive in nature: - The magnitude which depends upon inters
nucleon distance is of very high order.
(ii) Nuclear forces are charge independent: - Nature of force remains the same whether
we consider force between two protons, between two neutrons or between a
proton and a neutron.
(iii) These are short range forces: - Nuclear forces operate between two nucleons
situated in close neighborhood only.
(iv) Nuclear forces decrease very quickly with distance between two nucleons: - Their
rate of decrease is much rapid than that of inverse square law forces.
(v) Nuclear forces are spin dependent: - Nucleons having parallel spin are more strongly
bound to each other than those having anti-parallel spin.
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b) The breaking of a heavy nucleus into smaller nuclei is called nuclear fission while the
Combining of two light nuclei to form a heavy nucleus is called nuclear fusion. --- 1 mark
Ans.26- a) correct diagram --1 mark
b) A layer, created around the junction between p and n-sections of a junction diode
devoid of holes and electrons, is called depletion region.---- 1 mark
c) For germanium (Ge) and silicon (Si), the values of forbidden energy gap are 0.7 eV and
1.1 eV respectively. Owing to the smaller value of forbidden energy gap, germanium
is preferred over silicon.-- 1 mark
Ans.27- i)a) Huygen’s Principle ; Huygen’s Principle is based on two assumptions --1.5 marks
i)a )Each point on the primary wavefront is a source of a new disturbance called
secondary wavelets which travel in all directions with same velocity as that of
original waves.
A surface tangential to the secondary . wavelets gives the position and shape of new
wavefront at any instant. This is called secondary wavefront.
Diagram and Derivation -- 1.5 marks
Verification of Snell’s Law, from the figure, Proof of sin i/sin r = v1/v2
OR
INTERFERENCE --- 1.5 marks
1. Interference fringes may or may not be of the same width.
2. The intensity of minima is generally zero.
3. All bright fringes are of uniform intensity.
DIFFRACTION 1.5 marks
1. Diffraction fringes are not to be of the same width
2. The intensity of minima is never zero.
3. All bright fringes are of not uniform intensity.
Ans.28-A) definition and faraday laws 1.5 marks
B) Correct polarities -- 1. 5 marks
[SECTION D]
Ans.29- 1 𝑐) 8𝑚/𝑠 (Sol. F = q E, F = q v B , v =EB)
2 𝑏) 𝑑𝑜𝑤𝑛𝑤𝑎𝑟𝑑,
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3 𝑎) 𝑑𝑒𝑓𝑙𝑒𝑐𝑡𝑒𝑑 𝑢𝑝𝑤𝑎𝑟𝑑𝑠
4 𝑑) 2.2×10−9𝐶𝑚−2
Sol: E = v * B = (10 m/s) * (25 T) = 250 N/C
σ = E * ε₀ = (250 N/C) * (8.85 x 10-12 C²/N·m²) = 2.21 x 10-9 C/m²
OR
𝑏) 𝑒𝑙𝑒𝑐𝑡𝑟𝑖𝑐 𝑓𝑖𝑒𝑙𝑑
Ans.30-
1. (a) Negative terminal of the battery
2. (c) microampere
3. (b) photoelectric effect.
4. (d) intensity, photocurrent
OR
a) Explanation: According to the equation, W0 = hv0 , the work function is inversely
proportional to the wavelength. So metal A with lower work function has a higher
threshold wavelength
[SECTION E]
Ans.31- I- a) circuit diagram and derivation - 2 marks
b)Kirchhoff’s law and solution -- 3 marks
OR
II -A) Definition and unit siemens per meter (S/m) 2 marks
B) Derivation for series and parallel 1.5 + 1.5 marks
Ans.32- I -A) Diagram- 1.5 mark
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B) --- 1 mark
C) (i) In device X, Current lags behind the voltage by π /2, hence X is an inductor
In device Y, Current in phase with the applied voltage, hence Y is a resistor ----- 1.5 marks
(ii) We have given that -------1.5 marks
0.25=220/XL, XL =880Ω, also 0.25 =220/R, R = 880Ω
For the series combination of X and Y, equivalent impedance Z = 880 √2 Ω,
Hence I= 0.177 A.
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