® 2N2102

EPITAXIAL PLANAR NPN

■ GENERAL PURPOSE AMPLIFIER AND
SWITCH

DESCRIPTION
The 2N2102 is a silicon Planar Epitaxial NPN
transistor in Jedec TO-39 metal case. It is
( s )
intended for a wide variety of small-signall and
medium power applications in military and
uct
industrial equipments.
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TO-39

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) - INTERNAL SCHEMATIC DIAGRAM

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OABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CBO Collector-Base Voltage (I E = 0) 120 V
V CEO Collector-Emitter Voltage (I B = 0) 65 V
V CER Collector-Emitter Voltage (R BE ≤ 10Ω) 80 V
V EBO Emitter-Base Voltage (I C = 0) 7 V
IC Collector Current 1 A
P tot Total Dissipation at T amb ≤ 25 o C 1 W
o
at T C ≤ 25 C 5 W
o
T stg Storage Temperature -65 to 175 C
o
Tj Max. Operating Junction Temperature 175 C

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2N2102

THERMAL DATA
o
R thj-case Thermal Resistance Junction-Case Max 30 C/W
o
R thj-amb Thermal Resistance Junction-Ambient Max 150 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CBO Collector Cut-off V CB = 60 V 2 nA
Current (I E = 0) V CB = 60 V T C = 150 o C 2 µA
I EBO Emitter Cut-off Current V EB = 5 V 5 nA
(I C = 0)

(s)
V (BR)CBO Collector-Base I C = 100 µA 120 V
Breakdown Voltage
(I E = 0)
c t
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
I C = 30 mA 65

d u V

(I B = 0)
r o
V CE(sat) ∗ Collector-Emitter
Saturation Voltage
I C = 150 mA I B = 15 mA

e P 0.5 V

let
V BE(sat) ∗ Base-Emitter I C = 150 mA I B = 15 mA 1.1 V
Saturation Voltage
h FE ∗ DC Current Gain IC
IC
=
=
10 µA
100 µA so
V CE = 10 V

b
V CE = 10 V
10
20

O
IC = 10 mA V CE = 10 V 35
40 120
IC
IC
=
=
) -
150 mA
500 mA
V CE = 10 V
V CE = 10 V 25

(s
IC = 1A V CE = 10 V 10

ct
h fe ∗ High Frequency I C = 50 mA V CE = 10 V 6
Current Gain f = 20 MHz
NF Noise Figure
d u I C = 300 µA VCE = 10 V f = 1 KHz 8 dB

r o BW = 1 Hz R g = 510 Ω
C CBO
P
Collector-Base
Capacitance

e
IE = 0 V CB = 10 V f = 1MHz 15 pF

let
C EBO Emitter-Base IC = 0 V EB = 0.5 V f = 1MHz 80 pF
Capacitance

o
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %

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 2N2102

TO-39 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 12.7 0.500

B 0.49 0.019

D 6.6
( s
0.260)
ct
du
E 8.5 0.334

F 9.4
r o 0.370

e P
G 5.08

e t
0.200

H 1.2

s ol 0.047

I 0.9

O b 0.035

( s )- 45o (typ.)

c t
d u
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l e t D A

sI o G

O b
H
E
F

L
B

P008B

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 2N2102

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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics

© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved

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