Bharati Vidyapeeth

(Deemed to be University)
College of Engineering, Pune – 411043.

Department
of
Electronics & Communication Engineering

B. Tech ECE Semester-I

Electronic Components and Devices

Laboratory Manual

Department of Electronics & Communication Engineering

Bharati Vidyapeeth (Deemed to be University)
College of Engineering, Pune – 4110043
TITLE: V-I CHARACTERISTICS OF
P-N JUNCTION DIODE
 BHARATI VIDYAPEETH (DEEMED TO BE UNIVERSITY)
COLLEGE OF ENGINEERING PUNE
DEPARTMENT OF ELECTRONICS & COMMUNICATION
SUBJECT: ELECTRONIC COMPONENTS AND DEVICES SEM-I

Experiment No – 1

AIM- To plot V-I characteristics of PN Junction Diode.

APPARATUS-: Power supply, Multimeter, PN Junction Diode IN4001, connecting wires,

Breadboard.

THEORY:-
When a block of silicon is doped with trivalent impurity and other is doped with pentavalent
impurity, a boundary is created called as PN junction and a diode is formed. The majority
carriers in p-region are holes and in n-region are electrons. At the instant the PN junction is
formed, the free electrons near the junction in the n-region begin to diffuse across the junction
into the p-region, where recombination of holes and electrons take place and depletion region is
formed. The depletion region is depleted of charge carriers. The depletion region expands to a
point where equilibrium is established and there is no further diffusion of electron across the
junction, hence no current flows.

Forward Bias: Forward bias condition allows current through the PN junction. A external DC
voltage is applied to the diode. In the forward bias, the positive of the battery is connected to p-
region and the negative is connected to n-region. The bias voltage should be more than the
barrier potential. This bias voltage provided sufficient energy to the free electron that these
electron cross the depletion region and come into p-region which constitutes current flow in the
opposite direction of electrons.

Reverse Bias: In the reverse bias, the positive of the battery is connected to n-region and the
negative is connected to p-region. Due to this the depletion region gets wider. The transition
current flow is decreased. There is presence of small reverse current due to the migration of
minority charge carriers, which can be neglected.

Diode symbol:
FORWARD BIAS:-

REVERSE BIAS:-

OBSERVATION TABLE:-

Sr. No. Forward Bias Reverse Bias

Voltage (VF) Current IF (mA) Voltage (VR) Current IR (µA)

1
2
3
4
5
6
7
8
9
 10

GRAPH:-

PROCEDURE:
1. Find the type of diode connected in the experimental board.
2. Trace the circuit and indentify the different components used in the circuit.
3. Connect the multimeter with suitable range.
4. Switch on the power supply. With the help of Variable power supply
increase the voltage with suitable steps.
5. Note the multimeter readings for each increase in input voltage.
Tabulate the observations.
6. Draw the graph of voltage and current for forward and reverse biasing.

QUESTIONS:-
1) Draw and explain the change in the width of depletion region when diode is :-
i) forward biased
ii) reverse biased.
2) Differentiate between conductors, semiconductors and Insulators.
TITLE: HALF WAVE RECTIFIER
 BHARATI VIDYAPEETH (DEEMED TO BE UNIVERSITY)
COLLEGE OF ENGINEERING PUNE
DEPARTMENT OF ELECTRONICS & COMMUNICATION
SUBJECT: ELECTRONIC COMPONENTS AND DEVICES SEM-I
Experiment No – 2

AIM-To plot V-I characteristics of Half wave rectifier.

APPARATUS-: Half wave rectifier kit (PN Junction Diode IN4001, step-down Transformer,
resistor), CRO, connecting wires.
THEORY:-
A rectifier is an electronic device that converts AC voltage into DC voltage. In other words, it
converts alternating current to direct current.
During each “positive” half cycle of the AC sine wave, the diode is forward biased as the anode
is positive with respect to the cathode resulting in current flowing through the diode.
Since the DC load is resistive (resistor, R), the current flowing in the load resistor is therefore
proportional to the voltage (Ohm´s Law), and the voltage across the load resistor will therefore
be the same as the supply voltage, Vs (minus Vƒ), that is the “DC” voltage across the load is
sinusoidal for the first half cycle only so Vout = Vs.
During each “negative” half cycle of the AC sinusoidal input waveform, the diode is reverse
biased as the anode is negative with respect to the cathode. Therefore, NO current flows through
the diode or circuit. Then in the negative half cycle of the supply, no current flows in the load
resistor as no voltage appears across it so therefore, Vout = 0.
The current on the DC side of the circuit flows in one direction only making the
circuit Unidirectional.
A half wave rectifier is rarely used in practice. It is never preferred as the power supply of an
audio circuit because of the very high ripple factor. High ripple factor will result in noises in the
input audio signal, which in turn will affect audio quality. The power output and, therefore,
rectification efficiency is quite low. This is due to the fact that power is delivered only during
one-half cycle of the input alternating voltage. Transformer utilization factor is low.
The advantage of a half wave rectifier is only that its cheap, simple and easy to construct. It is
cheap because of the low number of components involved. Simple because of the straight
forwardness in circuit design.
CIRCUIT DIAGRAM:-

OBSERVATION TABLE:-
Sr.No Parameter Value
.
1 Vm
2 Vrms
3 Vdc
4 Irms
5 Idc
6 Ripple factor (r)
7 Efficiency

PROCEDURE:
1. Connect the circuit as per the circuit diagram.
2. Connect CRO across the load
3. Note down the peak value VM of the signal observed on the CRO
4. Calculate Vrms, Irms and Vdc, Idc values by using the formulae
Vrms=Vm/2, Irms=Im/2, Vdc = Vm/п, Idc=Im/п,
5. Calculate the ripple factor by using the formula:
6. Calculate the Efficiency

QUESTIONS:-
1) Explain the working of Half wave rectifier circuit with waveforms.
2) Define following factors of Half Wave rectifier:-
i) PIV ii) Ripple factor iii) Efficiency

TITLE: FULL WAVE RECTIFIER

 BHARATI VIDYAPEETH (DEEMED TO BE UNIVERSITY)
COLLEGE OF ENGINEERING PUNE
DEPARTMENT OF ELECTRONICS & COMMUNICATION
SUBJECT: ELECTRONIC COMPONENTS AND DEVICES SEM-I

Experiment No – 3

AIM- To plot V-I characteristics of Full wave rectifier.

APPARATUS-: Full wave rectifier kit (two PN Junction Diodes IN4001/07, step-down
Transformer, resistor), CRO, connecting wires.
THEORY:-
A Full wave rectifier is a type of rectifier which converts both half cycles of the AC signal into
pulsating DC signal. A center tapped full wave rectifier is a type of rectifier which uses a center
tapped transformer and two diodes to convert the complete AC signal into DC signal.
The center tapped full wave rectifier is made up of an AC source, a center tapped transformer,
two diodes, and a load resistor. The AC source is connected to the primary winding of the center
tapped transformer. A center tap (additional wire) connected at the exact middle of the the
secondary winding divides the input voltage into two parts. The upper part of the secondary
winding is connected to the diode D1 and the lower part of the secondary winding is connected to
the diode D2. Both diode D1 and diode D2 are connected to a common load R L with the help of a
center tap transformer. The center tap is generally considered as the ground point or the zero
voltage reference point.
When input AC voltage is applied, the secondary winding of the center tapped transformer
divides this input AC voltage into two parts: positive and negative.
During the positive half cycle of the input AC signal, terminal A become positive, terminal B
become negative and center tap is grounded (zero volts). The positive terminal A is connected to
the p-side of the diode D1 and the negative terminal B is connected to the n-side of the diode D 1.
So the diode D1 is forward biased during the positive half cycle and allows electric current
through it. On the other hand, the negative terminal B is connected to the p-side of the diode
D2 and the positive terminal A is connected to the n-side of the diode D 2. So the diode D2 is
reverse biased during the positive half cycle and does not allow electric current through it.
The diode D1 supplies DC current to the load R L. The DC current produced at the load R L will
return to the secondary winding through a center tap.
During the positive half cycle, current flows only in the upper part of the circuit while the lower
part of the circuit carry no current to the load because the diode D 2 is reverse biased. Thus,
during the positive half cycle of the input AC signal, only diode D 1 allows electric current while
diode D2 does not allow electric current.
During the negative half cycle of the input AC signal, terminal A become negative, terminal B
become positive and center tap is grounded (zero volts). The negative terminal A is connected to
the p-side of the diode D1 and the positive terminal B is connected to the n-side of the diode D 1.
So the diode D1 is reversed biased during the negative half cycle and does not allow electric
current through it.
On the other hand, the positive terminal B is connected to the p-side of the diode D 2 and the
negative terminal A is connected to the n-side of the diode D 2. So the diode D2 is forward biased
during the negative half cycle and allows electric current through it.The diode D 2 supplies DC
current to the load RL. The DC current produced at the load R L will return to the secondary
winding through a center tap.
During the negative half cycle, current flows only in the lower part of the circuit while the upper
part of the circuit carry no current to the load because the diode D 1 is reverse biased. Thus,
during the negative half cycle of the input AC signal, only diode D 2 allows electric current while
diode D1 does not allow electric current.
Thus, the diode D1 allows electric current during the positive half cycle and diode D 2 allows
electric current during the negative half cycle of the input AC signal. As a result, both half cycles
(positive and negative) of the input AC signal are allowed. So the output DC voltage is almost
equal to the input AC voltage.
The diodes D1 and D2 are commonly connected to the load R L. So the load current is the sum of
individual diode currents.current that flows in only single direction is called a direct current. So
the resultant current at the output (load) is a direct current (DC). However, the direct current
appeared at the output is not a pure direct current but a pulsating direct current.

CIRCUIT DIAGRAM:-
OBSERVATION TABLE:-
Sr.No Parameter Value
.
1 Vm
2 Vrms
3 Vdc
4 Irms
5 Idc
6 Ripple factor (r)
7 Efficiency

PROCEDURE:
1. Connect the circuit as per the circuit diagram.
2. Connect CRO across the load
3. Note down the peak value VM of the signal observed on the CRO
4. Calculate Vrmsand Vdc values by using the formulae
Vrms=Vm/√2, Irms=Im/√2, Vdc = 2Vm/п, Idc= 2Im/п,
5. Calculate the ripple factor by using the formulae
Ripple factor=Vac/Vdc=√(Vrms /Vdc)2- 1
6. Calculate Efficiency.

QUESTIONS:-
1) Explain the working of Full wave rectifier circuit with waveforms.
2) Define following factors of Full Wave rectifier:-
i) PIV ii) Ripple factor iii) Efficiency
TITLE: CHARACTERISTICS OF CE
CONFIGURATION
 BHARATI VIDYAPEETH (DEEMED TO BE UNIVERSITY)
COLLEGE OF ENGINEERING PUNE
DEPARTMENT OF ELECTRONICS & COMMUNICATION
SUBJECT: ELECTRONIC COMPONENTS AND DEVICES SEM-I

Experiment No – 4

AIM- To plot Input and output characteristics of CE configuration.

APPARATUS-: Power supply, Multimeters, connecting wires, CE configuration kit .

THEORY:-
A transistor has three terminals hence when it is connected in a circuit one of its terminals in
common to input and output parts of the circuits. Three circuits configurations in which a
transistor can be connected are, Common base configuration, Common emitter configuration,
Common collector configuration. When a transistor is used in common emitter configuration the
input is fed between its base and emitter terminal and output is taken between the collector and
emitter terminal as shown. Fig. shows the circuit for determining the input and output
characteristics of NPN transistor in common emitter configuration

CIRCUIT DIAGRAM:-
OPERATION:
The basic circuit diagram for studying input characteristics is shown in the circuit diagram. The
input is applied between base and emitter, the output is taken between collector and emitter. Here
emitter of the transistor is common to both input and output and hence the name Common
Emitter Configuration.
Input Characteristics :
It is defined as the characteristic curve drawn between input voltages to input current whereas
output voltage is constant. To determine input characteristics, the collector base voltage VCB is
kept constant at zero and base current IB is increased from zero by increasing VBE. This is
repeated for higher fixed values of VCE. A curve is drawn between base current and base
emitter voltage at constant collector base voltage. It is plotted between VBE and IB at
constant VCE in CE configuration
Output Characteristics:
It is defined as the characteristic curve drawn between output voltage to output current whereas
input current is constant. To determine output characteristics, the base current IB i s kept
constant at zero and collector current Ic is increased from zero by increasing VCE. This is
repeated for higher fixed values of IB. From the characteristic it is seen that for a constant value
of IB, Ic is independent of VCB and the curves are parallel to the axis of VCE. It is plotted
between VCE and IC at constant IB in CE configuration
PROCEDURE:
Input Characteristics:
1. Connect the circuit as shown in the circuit diagram.
2. Keep output voltage VCE = 0V by varying VCC.
 3. Varying VBB gradually, note down base current IB and base-emitter voltage VBE.
4. Step size is not fixed because of non linear curve. Initially vary VBB in steps of 0.1V.
Once the current starts increasing, vary VBB with sufficient steps.
5. Repeat above procedure (step 3) for VCE = 1V and VCE = 2V .

Output Characteristics:
1. Connect the circuit as shown in the circuit diagram.
2. Keep emitter current IB = 0 A initially.
3. Varying VCC gradually in steps of 0.5V up to 5V and note down collector current IC and
Collector-Emitter Voltage (VCE).
4. Repeat above procedure (step 3) for IB = 20µA, 40µA by varying VBB.

OBSERVATION TABLE:
Input Characteristics:
VBE (V)
Sr.No. IB (µA) (Input Voltage)
(Input current) VCE=0.5V VCE=1V

1
2
3
4
5
6

Output Characteristics:
Ic (mA)
Sr.No. VCE (output current)
(Output voltage) IB=20µA IB=40µA

1
2
3
4
5
6
GRAPH:

Input Characteristics Output Characteristics

1. Plot the input characteristics by taking VBE on X-axis and IB on Y-axis at a
constant VCE as a constant parameter.
2. Plot the output characteristics by taking VCE on X-axis and taking IC on Y-axis
taking IB as a constant parameter.
Calculations from Graph:
1. Input Characteristics: To obtain input resistance find VBE and IB for a constant VCE on
one of the input characteristics.
Input resistance = Ri = VBE / IB (VCE is constant)
2. Output Characteristics: To obtain output resistance find IC and VCB at a constant IB.
Input resistance= Ro = VCE / IC (IB is constant)

QUESTIONS:-

1) Explain operation of transistor in Cut-off region, Active region and saturation region with
graph.
2) Define current amplification factor for CE configuration and derive the relation between
α and β.
TITLE: BIASING TECHNIQUES
 BHARATI VIDYAPEETH (DEEMED TO BE UNIVERSITY)
COLLEGE OF ENGINEERING PUNE
DEPARTMENT OF ELECTRONICS & COMMUNICATION
SUBJECT: ELECTRONIC COMPONENTS AND DEVICES SEM-I

Experiment No – 5

AIM:
Biasing Techniques of BJT - To find stability factor of fixed bias and voltage divider biasing
circuit.
APPARATUS:
Trainer kit, Power Supply, DMM, Connecting Wires.
THEORY:
A BJT must be biased in active operating region to function as an amplifier. In order to bias a
BJT in active operating region, base-emitter junction must be forward biased and base-collector
junction must be reverse biased. Biasing can be done with the help of a DC source and a few
resistors. Different methods are used to bias the BJT. The objective of this experiment is to study
the effect of the variation of the parameters on the operating point.
I) Fixed bias circuit: A resistor is used to tie the base of the transistor to VCC for the fixed
bias set up. Saturation conditions are avoided in this bias set up because the base-collector
junction is no longer reverse biased. Therefore, the signal output will not be distorted. However,
the stability of the circuit is poor against the parameter variations.
Design Values :
VCC = β=
RC (Ω) = RB (Ω) =
PROCEDURE :
1.Study the circuit provided on the front panel of the kit & connect the
multimeter at desired points.
2.Connect base resistor RB and collector resistor Rc to VCC and Emitter to
ground, by using patch cords the circuit becomes Fixed Bias. Calculate
the theoretical value of currents & voltages and note the corresponding
values by observing ammeter & voltmeter (multimeter) readings.
Also calculate the Stability Factor “S”.

OBSERVATION TABLE:
Sr. No PARAMETERS THEROTICAL VALUES PRACTICAL VALUES

1 IB
2 IC
3 VCE

II) Voltage divider bias circuit: A potential divider resistor network R1, R2 provides the
sufficient voltages across the transistor junctions. This amplifier set up is almost independent of
β. R1 and R2 are designed such that a stable voltage drop exists across them even when the base
current varies. For this, current through R1 and R2 is assumed to be the same and it is much
higher than the base current. Therefore R2 is made much greater than the resistance across base
and emitter which is (1+β)RE.
Design Values :
VCC= β=
R1(Ω)= R2(Ω)=
RC(Ω)= RE(Ω)=
PROCEDURE :
1.Study the circuit provided on the front panel of the kit & connect the
multimeter at desired points.
2.Connect resistor R1 and collector resistor Rc to VCC and Emitter resistor RE and resistor R2 to
ground, by using patch cords the circuit becomes Voltage divider bias circuit Bias. Calculate
the theoretical value of currents & voltages and note the corresponding
values by observing ammeter & voltmeter (multimeter) readings.
Also calculate the Stability Factor “S”.

OBSERVATION TABLE:
Sr. No. PARAMETERS THEROTICAL VALUES PRACTICAL VALUES

1 I1
2 I2
3 IC
4 V2
5 VCE
6 VC

QUESTIONS:
1) Define concept of DC load line in detail.
2) Explain need of biasing and requirements of biasing circuits.
 3) What is Thermal runaway process ?
4) Define stability factor with general expression.

TITLE: FREQUENCY RESPONSE OF

SINGLE STAGE CE AMPLIFIER
 BHARATI VIDYAPEETH (DEEMED TO BE UNIVERSITY)
COLLEGE OF ENGINEERING PUNE
DEPARTMENT OF ELECTRONICS & COMMUNICATION
SUBJECT: ELECTRONIC COMPONENTS AND DEVICES SEM-I

Experiment No – 6
AIM:
To plot frequency response of single stage CE amplifier and find its bandwidth.

APPARATUS:
Trainer kit, Power Supply, DMM, CRO, signal generator, connecting Wires.
THEORY:
It is important to note that a transistor can accomplish faithful amplification only if proper
associated circuitry is used with it.
Biasing circuit: The resistances R1, R2 and RE form the biasing and stabilization circuit. The
biasing circuit must establish a proper operating point otherwise a part of the negative half-cycle
of the signal may be cut off in the output.
Input capacitor Cin: An electrolytic capacitor Cin is used to couple the signal to the base of the
transistor. If it is not used, the signal source resistance will come across R2 and thus change the
bias. The capacitor Cin allows only a.c. signal to flow but isolates the signal source from R2
Emitter bypass capacitor CE: An emitter bypass capacitor CE is used in parallel with RE to
provide a low reactance path to the amplified a.c. signal. If it is not used, amplified a.c. signal
flowing through RE will cause a voltage drop across it, thereby reducing the output voltage.
Coupling capacitor CC: The coupling capacitor CC couples one stage of amplification to the
next stage. If it is not used, the bias conditions of the next stage will be drastically changed due
to the shunting effect of RC. This is because RC will come in parallel with the upper resistance
R1 of the biasing network of the next stage, thereby altering the biasing conditions of the latter.
In short, the coupling capacitor CC isolates the d.c. of one stage from the next stage, but allows
the passage of a.c. signal.
The CE amplifier provides high gain & wide frequency response. The emitter lead is common to
both input & output circuits and is grounded. The emitter-base circuit is forward biased. The
collector current is controlled by the base current rather than emitter current. The input signal is
applied to base terminal of the transistor and amplifier output is taken across collector terminal.
A very small change in base current produces a much larger change in collector current.
When positive half-cycle is fed to the input circuit, it opposes the forward bias of the circuit
which causes the collector current to decrease, it decreases the voltage more negative Thus when
input cycle varies through a negative half-cycle, increases the forward bias of the circuit, which
causes the collector current to increases thus the output signal is common emitter amplifier is in
out of phase with the input signal.
CIRCUIT DIAGRAM:

PROCEDURE:
1. Connect the circuit as shown in circuit diagram
2. Apply the input of 20mV peak-to-peak and 50Hz frequency using function generator.
3. Measure the Output Voltage VO (p-p).
4. Tabulate the readings in the tabular form.
5. The voltage gain can be calculated by using the expression Av= (V0/Vi)
6. For plotting the frequency response the input voltage is kept Constant at 20mV peak-to-peak
and the frequency is varied from 50Hz to 1MHz Using function generator.
7. All the readings are tabulated and voltage gain in dB is calculated by using the expression
Av=20 log10 (V0/Vi)
8. A graph is drawn by taking frequency on x-axis and gain in dB on y-axis on Semi-log graph.
.
The band width of the amplifier is calculated from the graph using the expression,
Bandwidth, BW=f2-f1
Where f1 is the lower cut-off frequency of CE amplifier, and where f2 is the upper cut-off
frequency of CE amplifier
The bandwidth product of the amplifier is calculated using the expression
Gain Bandwidth product = (3dB mid-band gain) X (Bandwidth)

OBSERVATION TABLE :
Input voltage (Vin) =
Sr. Freq. in Hz. Vo AV= Vo/Vin Gain in dB
No. = 20 log10 (AV)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
 17
18
19
20

Bandwidth = f2 - f1 Hz
Question:
Draw CE Amplifier circuit and explain working of each component in detail.
TITLE: FREQUENCY RESPONSE OF
SINGLE STAGE FET AMPLIFIER
 BHARATI VIDYAPEETH (DEEMED TO BE UNIVERSITY)
COLLEGE OF ENGINEERING PUNE
DEPARTMENT OF ELECTRONICS & COMMUNICATION
SUBJECT: ELECTRONIC COMPONENTS AND DEVICES SEM-I

Experiment No – 7

AIM:
To plot frequency response of single stage FET amplifier and find its bandwidth.

APPARATUS:
Trainer kit, Power Supply, DMM, CRO, signal generator, connecting Wires.
THEORY:
A field-effect transistor (FET) is a type of transistor commonly used for weak-signal
amplification. The device can amplify analog or digital signals.
In the FET, current flows along a semiconductor path called the channel. At one end of the
channel, there is an electrode called the source. At the other end of the channel, there is an
electrode called the drain. The physical diameter of the channel is fixed, but its effective
electrical diameter can be varied by the application of a voltage to a control electrode called the
gate.
Field-effect transistors exist in two major classifications. These are known as the junction FET
(JFET) and the metal-oxide- semiconductor FET (MOSFET). The junction FET has a channel
consisting of N-type semiconductor (N-channel) or P-type semiconductor (P-channel) material,
the gate is made of the opposite semiconductor type.
In P-type material, electric charges are carried mainly in the form of electron deficiencies called
holes. In N-type material, the charge carriers are primarily electrons. In a JFET, the junction is
the boundary between the channel and the gate. Normally, this P-N junction is reverse-biased (a
DC voltage is applied to it) so that no current flows between the channel and the gate. However,
under some conditions there is a small current through the junction during part of the input signal
cycle.
The FET has some advantages and some disadvantages relative to the bipolar transistor. Field-
effect transistors are preferred for weak-signal work, for example in wireless, communications
and broadcast receivers. A common source amplifier FET amplifier has high input impedance
and a moderate voltage gain. Also, the input and output voltages are 180 degrees out of Phase.
CIRCUIT DIAGRAM:

OBSERVATION TABLE :

Input Voltage (Vin) =

S.NO Input Frequency Output Voltage Gain in

(Fin) Voltage(Vo) gain=Vo/Vin dB=20log10(Vo/Vin)
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
PROCEDURE:
1. Connections are made as per the circuit diagram.
2. A signal of 1 KHz frequency and 20mV peak-to-peak is applied at the Input of amplifier.
3. Output is taken at drain and gain is calculated by using the expression, Av=V0/Vi
4. Voltage gain in dB is calculated by using the expression, Av=20log 10(V0/Vi)
5. Repeat the above steps for various input voltages.
6. Plot Av in dB versus Frequency
7. The Bandwidth of the amplifier is calculated from the graph using theExpression,
Bandwidth BW=f2-f1
Where f1 is lower 3 dB frequency
f2 is upper 3 dB frequency.

RESULT: The 3-dB Bandwidth of the Amplifier is ___________.

QUESTIONS:
1. What is the difference between FET and BJT?
2 What are the FET parameters?
TITLE: LED AND LDR
 BHARATI VIDYAPEETH (DEEMED TO BE UNIVERSITY)
COLLEGE OF ENGINEERING PUNE
DEPARTMENT OF ELECTRONICS & COMMUNICATION
SUBJECT: ELECTRONIC COMPONENTS AND DEVICES SEM-I

Experiment No – 8
AIM: To plot V-I characteristics of LED and distance Vs photocurrent characteristics of LDR.

APPARATUS:
Trainer kit, Power Supply, DMM, Connecting Wires.

THEORY:

LED:
A Light Emitting Diode emits light when electrical energy is applied to it. When LED is forward biased, a
forward current start flowing through it. This current flow due to electrons supplied by the battery. These
are free electrons and they reside in conduction band. The energy level of conduction band is higher than
that of valence band. These electrons recombine with holes to become valence electron and come to lower
energy level. While coming back to valence band, they give the energy in the form of light.
The wavelength of emitted light depends on the value of forbidden gap. Forbidden gap depends upon
material used. Hence, color of emitted light depends upon material used. Si and Ge are not used for LED
because their forbidden gap does not allow the emission of light in the visible region.

Symbol:

A K

CIRCUIT DIAGRAM:
PROCEDURE:
1. Make the connections as shown in the circuit diagram.
2. Vary the input voltage between 0V-10V and note down current through the circuit.
3. Plot the graph between input voltage Vs current.

OBSERVATION TABLE:

Sr. No Voltage (V) Current (mA)

1
2
3
4
5
6
7
8
9
10
11

LDR:
Light dependent resistor makes the use of principle of photo conductivity. It is a semiconductor
device which is depends on intensity of incident light. The resistance of LDR will decrease with
increase in intensity on incident light.
When light is incident on photo sensitive, it works. A light sensitive material such as cadmium
sulphide is deposited on a ceramic substrate. Then substrate along with the photo sensitive layer
of cdS in enclosed in a metal container. Light is incident on light sensitive material through glass
window which is added at the top of the assembly.

Symbol:
CIRCUIT DIAGRAM:

PROCEDURE:
1. Make the connections as shown in the circuit diagram.
2. Keep the Light source at a distance and switch it ON so that light falls on LDR.
3. Vary distance between LDR & light source and note down the current (mA) and
distance.
4. Plot the graph between Distance Vs current.

OBSERVATION TABLE:
Vconstant =
Sr. No Distance Current
(cm) (mA)
1
2
3
4
5
6

QUESTIONS:
1. Explain construction, operation and applications of LED.
2. Explain construction, operation and applications of LDR.
TITLE: PHOTODIODE AND
PHOTOTRANSISTOR
 BHARATI VIDYAPEETH (DEEMED TO BE UNIVERSITY)
COLLEGE OF ENGINEERING PUNE
DEPARTMENT OF ELECTRONICS & COMMUNICATION
SUBJECT: ELECTRONIC COMPONENTS AND DEVICES SEM-I

Experiment No – 9
AIM:
To plot distance Vs current characteristics of photodiode and output characteristics of
phototransistor.
APPARATUS:
Trainer kit, Power Supply, DMM, Connecting Wires.

THEORY:
Photodiode:
The photodiodes are a p-n junction device whose region of operation is limited to reverse bias
region. The photodiodes have a small transparent window that allows light to incident on p-n
junction. The diode has a very small reverse leakage current when reverse biased. In
photodiodes, the reverse current is solely due to the thermally generated minority carriers in
photodiodes.
When there is no incident light, it is almost negligible and is called as dark current. The
application of light to the junction increases in a transfer of energy from the incident light in the
form of photons, resulting in an increased number of minority carriers and increased level of
reverse current.
It is the relation between reverse voltage and reverse saturation current at different intensity
level. The characteristics show that in the reverse bias region, the reverse current is almost
dependent on intensity of light.
Symbol:

CIRCUIT DIAGRAM:
PROCEDURE:
1) Make the connections as shown in the circuit diagram
2) Apply the reverse voltage across photodiodes 0-3V and take the reading for reverse current
without light source.
3) Maintain a known distance between the bulb and photodiode. Vary the distance and measure
the corresponding current.
4) Plot the graph: Distance Vs Current.

OBSERVATION TABLE:

WITHOUT LIGHT SOURCE:

Voltage (V) Current (mA)

WITH LIGHT SOURCE:

Sr.No. Distance Current

(cm) (mA)
1
2
3
4
5
6
7
8

Phototransistor:
The behavior of photo transistor is similar to photo diodes. The photo transistor has a light
sensitive collector base junction. The actual photo generation of the base current occurs in
collector base region, larger the physical area of this region, the baser current is generated. Thus,
a typical photo transistor is designed to offer a large to the incident light.
A photo transistor can be either 2- lead or 3- lead device. In 3 lead device configurations, the
base lead is brought out so that device can be convention bipolar transistor with or without the
additional light sensitivity feature.
Symbol

CIRCUIT DIAGRAM:

PROCEDURE:
1) Make the connections as shown in the circuit diagram.
2) Keep the distance between light source and photoresistor at constant level say at D=10cm,
3) Vary the input voltage and measure the corresponding Collector current.
Repeat above step for D=20 cm and D=30 cm, …
4) Plot the output characteristic graph for Voltage Vs Current for constant distance.

OBSERVATION TABLE:
Sr.No. Voltage D=10cm D=20cm D=30cm
Current Current Current
1
2
3
4
5
6
7
8
QUESTIONS:
1. Explain construction, operation and applications of LED.
TITLE: OPTO-COUPLER
 BHARATI VIDYAPEETH (DEEMED TO BE UNIVERSITY)
COLLEGE OF ENGINEERING PUNE
DEPARTMENT OF ELECTRONICS & COMMUNICATION
SUBJECT: ELECTRONIC COMPONENTS AND DEVICES SEM-I

Experiment No – 10

AIM: To plot transfer characteristics and Input Voltage Vs resistance graph of Opto-coupler

APPARATUS:
Trainer kit, Power Supply, DMM, Connecting Wires.

THEORY:
An Opto-isolator is basically an interface between two circuits which operates at different
voltage levels. The key advantage of an Opto-isolator is the electrical isolation between the input
and output circuits. With an opto-isolator, the only contact between the input and output is a
beam of light. Isolation like this is useful in high voltage application where the potential of two
circuits may differ by several thousand volts.
The working principle of opto-isolator is simple and interesting. The output signal of one circuit
can be controlled by varying input signal in another circuit, where the two circuits are
electrically isolated. A powerful light emitting diode (LED) is connected across a variable
voltage source. By adjusting the input voltage across the LED, the intensity of the light emitted
from the LED can be controlled. The variable source and the LED form the input circuit of the
opto-coupler or opto-isolator.
A photodiode is present in front of the LED so that the light from the LED directly strikes the
junction of the photodiode. The photodiode is in reverse biased condition. The reverse biased
circuit of the photodiode forms the output circuit of the system. It is also ensured that there is no
other light falling on the photodiode junction and the system is protected from any external light,
except the light coming from the LED. Initially, no voltage is applied to the LED; hence the
LED does not glow. In this condition as no light falls on the photodiode, there would be only
dark current flowing through the output circuit. Dark current is the reverse saturation current of
the reverse biased photodiode when it entire dark. This is the unavoidable reverse leakage
current of the diode. Now, if we increase the voltage across the LED, the LED starts glowing
and at same time intensity of the light increases with increasing input voltage across the LED.
With increasing light intensity, the reverse current in the photodiode increases, since the reverse
current in a photodiode is linearly proportional to the intensity of light falling on the photodiode
junction. Also, if we decrease the intensity of light in the input, the output photodiode current
will decrease.
CIRCUIT DIAGRAM:

PROCEDURE:
I) Transfer characteristics
5) Make the connections as shown in the circuit diagram.
6) Keep the DC power supply on Tracking mode.Apply V1 and V2voltages.
7) Measure LED input Current and Photodiode Output Current.
8) Draw transfer characteristics graph.

OBSERVATION TABLE:
SR. NO. LED input current PHOTODIODE output
(mA) current (mA)
1.
2.
3.
4.
5.
6.
7.
8.
II) Voltage Vs Resistance graph
1) Short the current paths of the same circuit.
2) Vary input voltage and measure Resistance at output pins.
3) For variation in resistance, we change the input voltage 1V, 2V, 3V . . . so on
4) Plot the graph between input voltage and resistance.

OBSERVATION TABLE:
Sr. No. Input voltage (V) Resistance (KΩ)
1.
2.
3.
4.
5.
6.
7.

8.

QUESTIONS:
1. Explain construction, operation and applications of Optocoupler.