0% found this document useful (0 votes)
41 views13 pages

Low-Noise Amplifier With Pre-Distortion Architecture For Ultra-Wide Band Application in Radio Frequency

Ultra-wide band (UWB) is a wireless technology deployed for transmitting data at high rates over short distances. Similar to Wi-Fi and Bluetooth, UWB is a radio frequency (RF) technology that operates via radio waves. To remove minor noise and glitches, low noise amplifier (LNA) is required because it amplifies weak signals without significantly adding noise. However, UWB has multiple frequencies that require coefficient change due to frequency variations. When low-pass filter (LPF) is ...

Uploaded by

IJRES team
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
41 views13 pages

Low-Noise Amplifier With Pre-Distortion Architecture For Ultra-Wide Band Application in Radio Frequency

Ultra-wide band (UWB) is a wireless technology deployed for transmitting data at high rates over short distances. Similar to Wi-Fi and Bluetooth, UWB is a radio frequency (RF) technology that operates via radio waves. To remove minor noise and glitches, low noise amplifier (LNA) is required because it amplifies weak signals without significantly adding noise. However, UWB has multiple frequencies that require coefficient change due to frequency variations. When low-pass filter (LPF) is ...

Uploaded by

IJRES team
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 13

International Journal of Reconfigurable and Embedded Systems (IJRES)

Vol. 14, No. 1, March 2025, pp. 208~220


ISSN: 2089-4864, DOI: 10.11591/ijres.v14.i1.pp208-220  208

Low-noise amplifier with pre-distortion architecture for ultra-


wide band application in radio frequency

Pradeep Kumar Siddanna, Parameshachari Bidare Divakarachari


Department of Electronics and Communication, Nitte Meenakshi Institute of Technology, Yelahanka, India

Article Info ABSTRACT


Article history: Ultra-wide band (UWB) is a wireless technology deployed for transmitting
data at high rates over short distances. Similar to Wi-Fi and Bluetooth, UWB
Received Aug 21, 2024 is a radio frequency (RF) technology that operates via radio waves. To
Revised Oct 4, 2024 remove minor noise and glitches, low noise amplifier (LNA) is required
Accepted Oct 18, 2024 because it amplifies weak signals without significantly adding noise.
However, UWB has multiple frequencies that require coefficient change due
to frequency variations. When low-pass filter (LPF) is employed to solve
Keywords: this, updates are necessary to manage delay and power because the LPF
feedback is connected to LNA to increase delay and power consumption. In
Complementary metal-oxide this research, LNA with a pre-distortion architecture is proposed to remove
semiconductor technology minor noises and small glitches. It is processed by using pre-distortion as an
LNA with pre-distortion active component which reduces delay and power consumption in UWB.
Low-pass filter The pre-distortion process operates in the subthreshold voltage range by
Noise figure providing a transistor to each frequency as input, inturn effectively reducing
Radio frequency the noise. The proposed LNA with pre-distortion architecture is developed
Ultra wide band on 180-nm complementary metal-oxide semiconductor (CMOS) technology
using Cadense ASIC tool. The proposed architecture achieves a noise figure
(NF) of 2.16 dB and less power consumption of 43.06×10-6 W when
compared to the existing techniques namely, cascade amplifiers, W-band
LNA, reflectionless receiver (RX), and broadband RF receiver front-end
circuits.
This is an open access article under the CC BY-SA license.

Corresponding Author:
Pradeep Kumar Siddanna
Department of Electronics and Communication, Nitte Meenakshi Institute of Technology
Yelahanka, Bengaluru, India
Email: [email protected]

1. INTRODUCTION
A low noise amplifier (LNA) is the most significant component of a radio frequency (RF) front-end
receiver system [1], [2]. Recently, the LNA power amplifier module with integrated duplexers is used to
minimize RF complexity in high-end platforms [3], [4]. Traditionally, resistive/reactive, balanced,
distributed, and feedback technologies are utilized to increase the bandwidth. The balanced amplifier
involves two 3 dB quadrature couplers and two identical amplifiers. It is viable to attain input/output return
loss and good gain flatness, but the 3 dB couplers obtain a large area and introduce noise to the circuit [5].
The transmission line contains a drain line inductor and drain-source capacitor device, a gate line inductor,
and gate-source capacitor device [6]. Numerous gain cells are added and amplified to produce ultra wide
band (UWB) features [7]. However, multiple gain cells require a large area which results in high noise and
high power consumption in distributed amplifiers [8]. Recently, there has been a growing interest in RF-
based device-free sensing and positioning, particularly leveraging the availability of physical-layer
information (channel response) for low-cost commercial radio devices like UWB, Wi-Fi, and RF

Journal homepage: http://ijres.iaescore.com


Int J Reconfigurable & Embedded Syst ISSN: 2089-4864  209

identification [9]. Without the requirement of attachment or visibility of sensors to the users, passive
RF-based sensing is significant for various applications that consider security, feasibility, and privacy
problems [10]. Certain RF bands like 2.4 and 5 GHz are greatly populated bands that offer coverage and
connectivity, but have much interference from the large demand of other devices [11]. To increase the
demand for higher data rates and greater system capacities of wireless communications, 5G technology is
moving towards mm-wave frequencies [12]. As the carrier frequency increases, it becomes challenging to
manage the performance of noise in LNA which is a receiver key block, because the minimum noise figure
(NF) of a single metal oxide semiconductor (MOS) device is proportional to its operating frequency [13].
Numerous noise-matching networks with band-pass filters (BPF), low-pass filter (LPF), and high pass filter
(HPF) structures that exhibit high-performance LNA in the complementary metal-oxide semiconductor
(CMOS) process [14], [15]. However, UWB has multiple frequencies which require to change coefficient
due to the frequency variations. When using an LPF to address this, updates are required along with a LPF
feedback connected to the LNA which increases the delay and power consumption. Chung and Iliadis [16]
implemented a cascade amplifier with inductive load and generation to optimize highly sensitive LNA for RF
environments. The main focus on cascade topology was despite the slightly high NF due to the addition of
one more transistor than the common gate and common source structure. The cascade amplifier topology was
beneficial in terms of gain, linearity, and bandwidth due to the dual-transistor configuration which reduced
early voltage effects and Miller capacitance. However, the cascade amplifier introduced more noise due to
the additional transistor stage which impacted the overall NF in LNA.
Agarwal et al. [17] suggested a narrowband inducer degenerated cascaded LNA design for attaining
efficient NA and maximum gain in real-time applications. Initially, the narrowband inducer degenerated the
cascaded LNA design analyzed input matching values, high gain, and high reverse isolation coefficient
values. These values were plotted in a Smith chart after performing an analysis of the S-parameter to
determine the system stability. The NA was decreased due to the topology of inductor degeneration adopted
in LNA, which eventually raised the gain and limited noise performance. However, the narrowband cascade
LNA suffered from increased power consumption and delay due to the inclusion of multiple cascade stages.
Hamdi [18] developed a W-band LNA in CMOS technology for wideband and narrowband applications. The
developed LNA employed extensions of input matching bandwidth depending on the source degeneration
topology, optimized at the supply voltage and center frequency. The LNA design was based on an agreeable
tradeoff between NA and gain which led to high linearity and better bilateral stability represented by an input
third-order intercept point. However, W-band LNA faced difficulties with high power consumption due to
constraints in the CMOS process scaling at high frequency, impacting both narrowband and wideband.
Deng et al. [19] introduced a reflectionless receiver (RX) to minimize in-band intermodulation and high-
order mixing products. The RX had a double-balance passive mixer, absorptive intermediate frequency (IF)
amplifier, and dual-path noise noise-canceling LNA. In order to prevent the out-of-band signal reflected by a
mixer, the absorptive IF amplifier was employed to minimize the high-order mixing products and
intermodulation caused by out-of-band remixing signals. The dual-path noise canceling LNA was utilized to
achieve NA at the range of wide frequency. However, RX suffered from increased noise because of the
insertion loss of reflective structures which degraded the overall performance. Zhou et al. [20] presented a
broadband RF receiver front-end circuit for internet of things applications. The dual-path noise-canceling
LNA circuit was designed to achieve balun functionality and impedance matching without the requirement of
on-chip inductors. The circuit of IQ local oscillator (LO) generation was employed in RF to generate non-
overlapping signals with a duty cycle which minimized the mixer’s power consumption and increased its
gain. However, broadband RF receivers struggled to effectively filter out unwanted signals because of the
broader frequency range. From the overall analysis, the existing techniques are seen to have limitations like
the introduction of more noise due to the additional transistor stage and insertion loss of reflective structures,
increased power consumption, and delay due to the inclusion of multiple cascade stages. However, UWB has
multiple frequencies which require to the coefficient to be changed due to the frequency variation. When
using an LPF to address this, updates are required to manage delay and power because LPF feedback
connected to the LNA which increase delay and power consumption. The above-stated problems need to be
solved, hence taken as the motivation of this research. Therefore, LNA with pre-distortion architecture is
proposed to remove minor noises and small glitches by using pre-distortion as a passive component which
reduces delay and power consumption in UWB.
The main contributions of this research are as follows: i) the LNA design utilizes an architecture
called pre-distortion, a linearization method to suppress inter-modulation distortion in LNA. The pre-
distortion architecture obtains high power efficiency and better linearity by minimizing frequency
interference and signal distortion; ii) the LNA with pre-distortion operates within the subthreshold voltage
range by providing a transistor to each frequency as an input which generates thresholds and reduces noise
effectively. Additionally, there is no feedback in the output; and iii) the proposed architecture is developed on
180-nm CMOS technology using Cadense ASIC tool.
Low-noise amplifier with pre-distortion architecture for ultra-wide band … (Pradeep Kumar Siddanna)
210  ISSN: 2089-4864

This paper is structured as follows: section 2 describes the proposed method in detail. Section 3
represents the LNA with pre-distortion method, while section 4 indicates the results and discussion. Lastly,
section 5 summarizes the overall conclusion of this study.

2. PROPOSED METHOD
In this research, the LNA with pre-distortion architecture is proposed to reduce noise effectively.
The RF receiver contains LNA, Mixer, LPF, analog to digital converter (ADC), and codeword distortion.
Initially, the analog signal is passed through the LNA to amplify weak incoming signals, where this LNA
employs a pre-distortion architecture to suppress the inter-modulation distortion and obtain high power
efficiency with better linearity. Then, the signal is fed into the mixer by combining an analog signal with an
input signal to remove unwanted noise in the signal. Then, LPA is used to remove the high-frequency noise
or interference present in a signal. ADC is employed to convert analog signal to digital signal. Finally, a
codeword detector is performed to identify the type of signal to be received. Figure 1 determines a block
diagram for the RF system.
The proposed architecture begins by passing the analog signal into LNA which detect variations in
signals, while pre-distortion reduces the intermodulation interference. Following this, mixer, LPF, ADC, and
codeword detector are employed. The overall workflow of the proposed methodology is explained:
− Initially, the analog signal is fed into LNA which detects variations in the amplitude of signal.
− LNA utilizes a pre-distortion architecture to suppress inter-modulation distortion in LNA. In the
schematic LNA diagram, the first block is a pre-distortion circuit which is processed by active
components that obtain high power efficiency and better linearity by minimizing frequency interference
and signal distortion.
− Pre-distortion architecture enables high-speed data transmission with spectrum efficiency which
achieves low power consumption effectively. Therefore, the linear relationship between input/output
(I/O) and distortion is minimized, and hence the overall amplifier linearity is achieved by using the pre-
distortion circuit before LNA.
− In the N-MOS transistor, 18 volts turns on, while 0 volts turns off. In the P-MOS transistor, 0 volts
activates it, while the supply voltage turns it off. Then, the output is generated noise out noise-free.
− The mixer process integrates the RF input signal with a local oscillator (LO) signal. This mixing process
generates sum and difference frequency components.
− Then, the mixer output is fed into LPF to check whether it contains noise. After eliminating the noise,
ADC is performed to convert an analog signal into a digital signal.
− Finally, a codeword detector is used to identify the type of signal to be received by storing
predetermined patterns or codes corresponding to the signal.

Figure 1. RF block diagram

3. LOW NOISE AMPLIFIER WITH PRE-DISTORTION ARCHITECTURE


LNA with pre-distortion is designed to reduce noise and power consumption for UWB in RF. The
pre-distortion compensates for non-lineraites in LNA and enhances the signal clarity. This proposed
arcitecture is significant for managing high signal integrity over wide frequency ranges to render it
appropriate for UWB system.

Int J Reconfigurable & Embedded Syst, Vol. 14, No. 1, March 2025: 208-220
Int J Reconfigurable & Embedded Syst ISSN: 2089-4864  211

3.1. Low noise amplifier


Initially, the analog signal is fed into LNA which detects variations in signal amplitude and plays a
primary role in the receiver side. In an RF receiver, LNA is designed to amplify [21], [22] weak incoming
signals while establishing minimal additional noise which enhances the receiver’s sensitivity and improves
the signal-to-noise ratio. LNA is essential in applications that need accurate signal processing such as in
wireless communication systems and RF. The LNA performance is mainly affected by three parameters
which are NF, gain, and input impedance of the amplifier. To achieve these goals simultaneously, a two-
phase topology is utilized with the first phase optimized for low-noise and high-gain operation. The second
stage aims for high linearity and high 1db point compression by employing negative feedback. The cascade
topology with inductive degeneration is utilized to enable appropriate impedance matching and isolation. The
first step is the estimation of the optimum width of the input transistor 𝑀1 to acquire the best noise
performance which is expressed in (1):
1
𝑊1 = 𝑊𝑜𝑝𝑡1𝐹𝑚𝑖𝑛 = (1)
3𝜔𝐿𝐶𝑜𝑥 𝑅𝑠

where, 𝐶𝑜𝑥 , 𝑅𝑠 , and 𝐿 respectively represent the transistor length, oxide capacitance, source resistance, and
operating frequency. The cascading transistor dimension 𝑀2 is same as that of 𝑀2 . This needs a trade-off to
prevent the magnitude of noise 𝑀2 and Miller effect 𝑀1 . The refernce current 𝐼𝑟𝑒𝑓 is evaluated depending on
the circuit power consumption. The overall gate-source capacitance 𝐶𝑔𝑠𝑡 of transistor 𝑀1 is expressed in (2).

2
𝐶𝑔𝑠𝑡 ≅ 𝑊1 𝐿𝐶𝑜𝑥 (2)
3

Transistor 𝑀3 is utilized as an LNA biasing network that constructs a current mirror with 𝑀1 .
Further to reduce the noise and power consumption, the transistor width 𝑀3 is set to a 𝑀1 fraction. From (3),
it is determined that the source inductor is utilized for impedance matching and the inductor of the gate is
employed for input resonance frequency.

1 𝑔𝑚
𝜔0 = √ 𝐿𝑠 − 50 (3)
(𝐿𝑠 +𝐿𝑔 )𝐶𝑔𝑠𝑡 𝐶𝑔𝑠𝑡

A resistance 𝑅𝑏 is utilized to determine the gate-source capacitance effect in 𝑀3 transistor and its
value is 2-4 𝑘Ω in 0.18 𝜇𝑚. Typically, 𝐶1 is considered to be 5-10 times > 𝐶𝑔𝑠𝑡 . At the output, an inductor is
kept at the drain for the main reasons. Initially, it is to attain the desired frequency at the drain inductor that
resonates by the overall drain capacitance. Next, it generates a high impedance to acquire a better gain. The
voltage gain for LNA is computed as formulated mathematically in (4). Where, 𝑔𝑚1 indicates
transconductance of 𝑀1 , 𝑍1 represents load impedance, and 𝑄𝑖𝑛 denotes network quality factor in input
matching. Figure 2 represents a schematic diagram for LNA.

1 𝜔0 (𝐿𝑔 +𝐿𝑠 )
𝐴𝑣 ≅ 𝑄𝑖𝑛 𝑔𝑚1 𝑍𝐿 , 𝑄𝑖𝑛 = = (4)
2𝜔0 𝑅𝑠 𝐶𝑔𝑠𝑡 2𝑅𝑠

3.1.1. Pre-distortion amplifier


The LNA design utilizes an architecture called pre-distortion which is a linearization method that
suppresses the inter-modulation distortion in LNA. In the schematic LNA diagram, the first block is a pre-
distortion circuit which is processed by active components. In that, the variable voltage 1.82 peak voltage
(𝑉𝑝 ) is given to the frequency which removes minor noise. The main goal is to implement a pre-distortion to
obtain high power efficiency and better linearity by minimizing frequency interference and signal distortion.
The pre-distortion architecture is developed on 180-nm CMOS technology which achieves better linearity.
Before amplification, the pre-distortion adjusts the signal that reduces distortion and renders the signal output
matchable to the input which leads to enhnaced efficiency, and signal quality in UWB. Pre-distortion is one
of the generic terms added in the architecture that helps linearize the minor noise amplifier by making
suitable modifications through its insertion at the front of the main device to cancel the modulation distortion
of a major device to the I/O signal and amplitude-phase. Figure 3 depicts the schematic diagram for the pre-
distortion circuit.

Low-noise amplifier with pre-distortion architecture for ultra-wide band … (Pradeep Kumar Siddanna)
212  ISSN: 2089-4864

Figure 2. The schematic diagram for LNA

Figure 3. The schematic diagram for pre-distortion circuit

Pre-distortion is inserted in at the front of the primary device and hence helps to cancel modulation
distortion of the major device. The primary role of the pre-distortion architecture is to enhance linearity in the
I/O broad range without NF degradation. This architecture enables high-speed data transmission with
spectrum efficiency, alongside low power consumption effectively achieved. Therefore, the linear
relationship between I/O and distortion is minimized and hence the overall amplifier linearity is achieved by
using the pre-distortion circuit before LNA. The capacitor and resistor are used as loads to filter out passive
components. In the N-MOS transistor, 18 volts turns on, while 0 volts turns off. In the P-MOS transistor, 0
volts turns on, while the supply voltage turns off. Then, the output is generated noise-free by eliminating the

Int J Reconfigurable & Embedded Syst, Vol. 14, No. 1, March 2025: 208-220
Int J Reconfigurable & Embedded Syst ISSN: 2089-4864  213

noise. Figure 4 indicates the overall diagram for the LNA-pre-distortion architecture. Then, the output of pre-
distortion is fed into the mixer process.

Figure 4. The overall schematic diagram for the LNA-pre-distortion circuit

3.2. Mixer
The mixer process integrates the RF input signal with linear amplifier (LA) signal which generates
the sum and difference frequency components. The primary structure of a single mixer is that it has 2 input
ports and 1 output port. It integrates a carrier signal RF subject to down-conversion [23] or up-conversion
with input from a LO.
The properties of mixer are time-variance and nonlinearity, and the operation is determined in the
time domain by multiplying 2 input signals which are numerically expressed in (5) and (6). The output of the
mixer is expressed in (7). The mixer output contains the sum and difference of the input signal and LO
frequency. Then, the output of the mixer is fed into LPF to eliminate high-frequency noise.

𝑥(𝑡) = 𝐴 𝑐𝑜𝑠 𝜔1 𝑡 (5)

𝑦(𝑡) = 𝐵 𝑐𝑜𝑠 𝜔2 𝑡 (6)


𝐴𝐵 𝐴𝐵
𝑥(𝑡). 𝑦(𝑡) = 𝐴 𝑐𝑜𝑠 𝜔1 𝑡 . 𝐵 𝑐𝑜𝑠 𝜔2 𝑡 = 𝑐𝑜𝑠(𝜔1 − 𝜔2 )𝑡 + 𝑐𝑜𝑠(𝜔1 + 𝜔2 )𝑡 (7)
2 2

3.3. LPF, ADC, and codeword detector


After the mixer operation, the LPF is performed to check if it contains noise in a signal. In signal
processing, an LPF [24] is commonly utilized to remove or attenuate high-frequency components from a
signal when allowing the component of low-frequency. In data interpretations, it enhances the clarity of
signal and reduces errors which make it crucial for exact signal processing. This process assists in isolating
the desired low-frequency components, making it easier to evaluate the signal for further processing. After
removing the noise, the ADC [25] is performed to convert an analog signal into a digital signal. It determines
the analog input at regular intervals, quantizes the values of samples into a binary code, and assigns digital
values depending on the input voltage levels. After converting to a digital signal, the codeword detector is
employed to identify the type of signal to be received, while storing predetermined codes or patterns
corresponding to signals. Using an LNA with pre-distortion in the RF receiver enables improved linearity,
reduces noise performances by maintaining a high signal-to-noise ratio, and provides low power consumption
due to optimized signal handling, resulting in overall efficiency gains in RF receiver for UWB application.
Low-noise amplifier with pre-distortion architecture for ultra-wide band … (Pradeep Kumar Siddanna)
214  ISSN: 2089-4864

4. RESULTS AND DISCUSSION


The proposed LNA with pre-distortion architecture is simulated by utilizing the Cadence Asic tool
and 180-nm CMOS technology. LNA amplifies the weak incoming signals while establishing minimal
additional noise which improves signal-to-noise ratio. Pre-distortion linearizes the LNA by making suitable
modifications by inserting it at the front of the main device to remove modulation distortion of a major
device on the I/O signal without NF degradation. The performance of conventional LNA and proposed LNA
with pre-distortion is presented in the following subsections.

4.1. Performance analysis


Figures 5 and 6 indicate the NF performance for conventional LNA and proposed LNA with
predistortion architecture. NF represents the ratio of the signal-to-noise ratio at the input of a device to the
signal-to-noise ratio at output, which is measured in decibels (dB). NF quantifies additional noise produced
by the pre-distortion process which is associated with the original noise level of the signal. A lower NF
represents that the pre-distortion architecture effectively minimizes signal distortion without increasing noise,
which is shown in Figures 5 and 6.

Figure 5. Performance of NF for conventional LNA

Figure 6. Performance of NF for proposed LNA with pre-distortion

Int J Reconfigurable & Embedded Syst, Vol. 14, No. 1, March 2025: 208-220
Int J Reconfigurable & Embedded Syst ISSN: 2089-4864  215

On the other hand, Figures 7 and 8 illustrate the performance of power wave for conventional LNA
and the proposed LNA with pre-distortion architecture. Power wave performance measures the efficiency
with which the amplifier manages power signals, minor noises, and glitches. The proposed architecture
exhibits better performance in power waves, as compared to the conventional LNA due to reduced minor
noises and glitches which prove it to be more efficient in power management. This results in clearer, more
stable signal transmission in power wave characteristics in th proposed LNA with pre-distortion.

Figure 7. Performance of power wave for conventional LNA

Figure 8. Performance of power wave for proposed LNA with pre-distortion

Figures 9 and 10 indicate the delay performance for conventional LNA and proposed LNA with pre-
distortion in 180 nm CMOS technology. From this analysis, it is clear that LNA with pre-distortion
architecture has less delay of 2.516 ns, wheares the conventional LNA exhibits 5.013 ns. The proposed
method achieves less delay due to pre-distortion adjusts for nonlinearities in the amplifier stage. This
sreamlined signal management not only minimizes the delay but also increases the speed and quality of

Low-noise amplifier with pre-distortion architecture for ultra-wide band … (Pradeep Kumar Siddanna)
216  ISSN: 2089-4864

transmitted signal which enables the proposed LNA with pre-distortion to be more reliable. This streamlined
process minimizes delay, enhancing the overall signal quality and speed.

Figure 9. Delay performance for conventional LNA

Figure 10. Delay performance for proposed LNA with Pre-distortion

Figures 11 and 12 demonstrate the performances of power consumption for conventional LNA and
proposed LNA with pre-distortion. Their observation proves that the proposed approach obtains a better
power consumption of 43.06×10-6 W, as opposed to conventional LNA of 1.256 10-3 W. This is because of
the pre-distortion architecture which minimizes the non-linearities in the amplifier, and hence does not
require as much power to fix distortions. This in turn empowers the LNA with pre-distortion, thereby
standing more persuasive with lesser by power consumption.

Int J Reconfigurable & Embedded Syst, Vol. 14, No. 1, March 2025: 208-220
Int J Reconfigurable & Embedded Syst ISSN: 2089-4864  217

Figure 11. Performance of power consumption for conventional LNA

Figure 12. Performance of power consumption for proposed LNA with pre-distortion

Table 1 determines the performance analysis of conventional LNA and proposed LNA with pre-
distortion in 180 nm CMOS technology. The performance of LNA is compared against the proposed
architecture. The obtained results show that LNA with pre-distortion achieves a superior NF of 2.16 dB
because the proposed approach enables linearity. This hence reduces noise performances by maintaining a
high signal-to-noise ratio, and provides low power consumption due to the optimized signal handling which
leads to overall efficiency gains in RF receiver. The results emphasize the effectiveness of incorporating pre-
distortion in boosting the resourcefulness and execution of LNA in RF.

Table 1. Performance analysis for conventional LNA and proposed LNA with pre-distortion
Performance Conventional LNA Proposed LNA with pre-distortion
NF (dB) 3.68 2.16
IIP3 (dBm) 6.157 3.874
Area (mm2) 1.46 0.15
S11 <-6 <-9
Power (W) 1.256×10-3 43.06×10-6
1 dB compression point 8.5 7.2

Low-noise amplifier with pre-distortion architecture for ultra-wide band … (Pradeep Kumar Siddanna)
218  ISSN: 2089-4864

4.2. Comparative analysis


Table 2 and Figure 13 presents a comparative analysis of the existing techniques using 180 nm
CMOS technology. The existing methods: cascade amplifier [16], N-LNA [17], and W-band LNA [18] are
compared with the proposed LNA with the pre-distortion technique. In relation to the existing techniques,
LNA with pre-distortion attains a finer NF of 2.16 dB, IIP3 of 3.874 dBm, area of 0.15 mm 2, and power of
43.06×10-6 W due to incorporating pre-distortion. The LNA compensates for non-linearities and distortions
that typically occur in signal amplification which gives rise to enhanced signal fidelity. Also, the reduced NF
of LNA contributes to elevated SNR, significant for managing high-quality communication over wide
frequency ranges. The proposed architecture maintains lineraity across varying signal amplitudes which
further provides preeminent performance.

Table 2. Comparative analysis of existing techniques


Methods CMOS technology NF (dB) Area (mm3) Power (W)
Cascade amplifier [16] 180 nm 3.54 0.26 9×10-3
N-LNA [17] - 3 - -
W-band LNA [18] 0.18 μm 3 N/A N/A
Proposed method 180 nm 2.16 0.15 43.06×10-6

Figure 13. Graphical representation of proposed architecture with existing methods

4.3. Discussion
The research presents a LNA with pre-distortion architecture by representing significant
improvements over the existing approaches. The significant interpretations of the findings demonstrates that
the proposed LNA with pre-distortion effectively solves the key problems determined in existing models.
Especially, the cascade amplifier [16] introduces more noise due to the additional transistor stage which
impacts the overall NA in LNA. Narrowband cascade LNA [17] suffers from increased power consumption
due to the inclusion of multiple cascade stages. W-band LNA [18] faces difficulties with high power
consumption due to the constraints in CMOS process scaling at high frequency which impacts both
narrowband and wideband. RX [19] suffers from increased noise because of the insertion loss of reflective
structures which degrades the overall performance. Broadband RF receiver [20] struggles to effectively filter
out unwanted signals because of the broader frequency range. The proposed LNA with pre-distortion
architecture overcomes these existing techniques' limitations by adding pre-distortion before LNA and
achieves a superior outcomes.
The pre-distortion technique enhances linearity in the I/O broad range without NF degradation. This
pre-distortion architecture enables high-speed data transmission with spectrum efficiency which obtains
effective low power consumption. This pre-distortion architecture increases the linearity. Therefore, LNA
with pre-distortion achieves a superior NF of 2.16 dB with a power consumption of 43.06×10-6 W whereas
the existing method obtains 3.54 dB noise with 9 ×10-3 power consumption. When this comparison is taken
into consideration, the existing research upholds numerous benefits of the proposed architecture.
Nonetheless, the proposed architecture is effective in reducing non-lineraities but does not fully eliminate all
forms of distortions, especially at high frequencies. This is due to complex interaction between amplifiers
characteristics and pre-distortion process. Therefore, certain residual distortion still impacts the signal
integrity, subsequently affecting the high-frequency performance.

Int J Reconfigurable & Embedded Syst, Vol. 14, No. 1, March 2025: 208-220
Int J Reconfigurable & Embedded Syst ISSN: 2089-4864  219

5. CONCLUSION
In this research, LNA with pre-distortion architecture is proposed to reduce the minor noise and
small glitches for UWB applications. LNA amplifies weak incoming signals while establishing minimal
additional noise which accordingly increases the receiver’s sensitivity and improves signal-to-noise ratio.
The inclusion of pre-distortion in the architecture plays a signiifcant role by linearizing the minor noise
amplifier. This is obtained by presenting the modifications at the front of the main device which assists to
cancel out modulation distortions by ensuring a more acurate I/O relationships. This architecture significance
enhnaces the spectrum efficiency, data transmission speed, and minimizes the power consumption. The LNA
with pre-distortion operates within the subthreshold voltage range by providing a transistor to each frequency
as the input which generates thresholds and reduces noise effectively. By performing these operations, the
proposed approach achieves commendable NF of 2.16 dB with a power consumption of 43.06 ×10-6 W in
contrast to the existing architecture, cascade amplifiers. For practical implementation, it is recommended that
future work continues to use advanced pre-distortion architecture to continue improving the model’s
performance.

REFERENCES
[1] L. W. Ouyang, J. C. Mayeda, C. Sweeney, D. Y. C. Lie, and J. Lopez, “A broadband millimeter-wave 5G low noise amplifier
design in 22 nm fully depleted silicon-on-insulator (FD-SOI) CMOS,” Applied Sciences, vol. 14, no. 7, Apr. 2024. doi:
10.3390/app14073080.
[2] N. Bajpai, P. Maity, M. Shah, A. Das, and Y. S. Chauhan, “An ultra-low noise figure and multi-band re-configurable low noise
amplifier,” IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 70, no. 3, pp. 1006-1016, Mar. 2023. doi:
10.1109/TCSI.2022.3229135.
[3] J. Jeong, S. Kim, S. Lee, and J. Han, “Calibration-free blocker rejection broadband CMOS low noise amplifier for advanced
cellular applications,” IEEE Access, vol. 11, pp. 7739-7750, 2023. doi: 10.1109/ACCESS.2023.3238365.
[4] V. Thenmozhi and M. Bhaskar, “Linearity improvement of LC cross-coupled low noise amplifier for X band applications,”
Microsystem Technologies, vol. 28, pp. 2731-2744, Dec. 2022, doi: 10.1007/s00542-022-05325-5.
[5] W. Liu, H. Lei, H. Liu, and P. Jiang, “Design of an ultra-wideband LNA using transformer matching method,” Integration, vol.
87, pp. 122-136, Nov. 2022, doi: 10.1016/j.vlsi.2022.06.012.
[6] S. A. H. Asl et al., “A 1.8–2.7 GHz triple-band low noise amplifier with 31.5 dB dynamic range of power gain and adaptive
power consumption for LTE application,” Sensors, vol. 22, no. 11, p. 4039, 2022, doi: 10.3390/s22114039.
[7] M. A. S. Bhuiyan et al., “CMOS low noise amplifier design trends towards millimeter-wave IoT sensors,” Ain Shams
Engineering Journal, vol. 15, no. 2, Feb 2024, doi: 10.1016/j.asej.2023.102368.
[8] W. Wang, and L. Gan, “Radio frequency fingerprinting improved by statistical noise reduction,” IEEE Transactions on Cognitive
Communications and Networking, vol. 8, no. 3, pp. 1444-1452, Sept 2022. doi: 10.1109/TCCN.2022.3171792.
[9] C. Li, E. Tanghe, L. Martens, J. Romme, G. Singh, E. De Poorter, and W. Joseph, “Device-free pedestrian tracking using low-
cost ultrawideband devices,” IEEE Transactions on Instrumentation and Measurement, vol. 71, pp. 1-4, 2022, doi:
10.1109/TIM.2022.3157004.
[10] S. P. Singh, T. Rahkonen, M. E. Leinonen, and A. Parssinen, “Design aspects of single-ended and differential SiGe low-noise
amplifiers operating above f max/2in sub-THz/THz frequencies,” IEEE Journal of Solid-State Circuits, vol. 58, no. 9, pp. 2478-
2488, Sept 2023. doi: 10.1109/JSSC.2023.3264475.
[11] I. Ketata, S. Ouerghemmi, A. Fakhfakh, and F. Derbel, “Design and implementation of low noise amplifier operating at 868 mhz
for duty cycled wake-up receiver front-end,” Electronics, vol. 11, no. 19, Oct 2022, doi: 10.3390/electronics11193235.
[12] Y. Wang, T. Y. Chiu, C. C. Chien, W. H. Tsai, and H. Wang, “An E-band high-performance variable gain low noise amplifier for
wireless communications in 90-nm CMOS process,” IEEE Microwave and Wireless Components Letters, vol. 32, no. 9, pp. 1095-
1098, Sept 2022. doi: 10.1109/LMWC.2022.3161295.
[13] E. Kobal, T. Siriburanon, X. Chen, H. M. Nguyen, R. B. Staszewski, and A. Zhu, “A G m-boosting technique for millimeter-
wave low-noise amplifiers in 28-nm triple-well bulk CMOS using floating resistor in body biasing,” IEEE Transactions on
Circuits and Systems I: Regular Papers, vol. 69, no. 12, pp. 5007-5017, Dec. 2022. doi: 10.1109/TCSI.2022.3200161.
[14] J. T. Lim et al., “Bulk CMOS low noise amplifier with two stage HPF noise matching structure,” IEEE Transactions on Circuits
and Systems II: Express Briefs, vol. 70, no. 6, pp. 1866-1870, Jun. 2023. doi: 10.1109/TCSII.2022.3233537.
[15] L. Fang and P. Gui, “A low-noise low-power chopper instrumentation amplifier with robust technique for mitigating chopping
ripples,” IEEE Journal of Solid-State Circui, vol. 57, no. 6, pp. 1800-1811, Jun 2022. doi: 10.1109/JSSC.2022.3151106.
[16] J. Chung and A. A. Iliadis, “Novel approach and methods for optimizing highly sensitive low noise amplifier cmos ic design for
congested RF environments,” Electronics, vol. 11, no. 7, Mar 2022, doi: 10.3390/electronics11070976.
[17] N. Agarwal, M. Gupta, and M. Kumar, “Design of high gain high output matched narrow band LNA using induced degeneration
topology for receiver applications,” Telecommunication Systems, vol. 79, no. 4, pp. 583-599, Feb 2022, doi: 10.1007/s11235-021-
00869-9.
[18] A. Hamdi, “Design and performance analysis of W-band low noise amplifier for RFIC-5G mobile systems,” Mobile Information
Systems, Aug 2022, doi: 10.1155/2022/8323322.
[19] Z. Deng, H. J. Qian, and X. Luo, “A reflectionless receiver with absorptive IF amplifier and dual-path noise-canceling LNA,”
IEEE Journal of Solid-State Circuits, vol. 57, no. 8, pp. 2309-2319, Aug 2022. doi: 10.1109/JSSC.2022.3145054.
[20] R. Zhou, J. Yang, L. Wang, X. Zhao, S. Liu, and D. Sun, “A wideband low power RF receiver front-end for internet-of-things
applications,” Microelectronics Journal, vol. 144, Feb 2024, doi: 10.1016/j.mejo.2023.106064
[21] R. Mugadhanam and E. Uppara, “Design and analysis of improved 3-stage LNA architecture for CMOS RF front end receiver
systems,” International Journal of Intelligent Engineering & Systems, vol. 15, no. 3, pp. 12-23, 2022. doi:
10.22266/ijies2022.0630.02
[22] H. Bouali, B. Benhala, and M. Guerbaoui, “Multi-objective optimization of CMOS low noise amplifier through nature-inspired
swarm intelligence,” Bulletin of Electrical Engineering and Informatics (BEEI), vol. 12, no. 5, pp. 2824-2836, Oct. 2023, doi:
10.11591/eei.v12i5.5512.

Low-noise amplifier with pre-distortion architecture for ultra-wide band … (Pradeep Kumar Siddanna)
220  ISSN: 2089-4864

[23] A. Abbasi, A. H. Moshrefi, and F. Nabki, “A wideband low-power RF-to-BB current-reuse receiver using an active inductor and
1/f noise-cancellation for L-band applications,” IEEE Access, vol. 10, pp. 95839-95848, Sept. 2022, doi:
10.1109/ACCESS.2022.3205110.
[24] P. S. Tomar and M. S. Parihar, “The design and investigation of the low-pass filter with high selectivity and ultra-wide stopband,”
IETE Journal of Research, vol. 70, no. 3, pp. 2366-2371, Mar. 2024, doi: 10.1080/03772063.2023.2185303.
[25] J. Chae and J. H. Cho, “An ADC-aware receiver design for multi-user MIMO underlay system with strong cyclostationary legacy
signal,” IEEE Access, vol. 11, pp. 119788-119801, Nov. 2023. doi: 10.1109/ACCESS.2023.3327439.

BIOGRAPHIES OF AUTHORS

Pradeep Kumar Siddanna is pursuing his doctor of philosophy in the


Department of Electronics and Communication Engineering at Nitte Meenakshi Institute of
Technology, located in Bengaluru, Karnataka, India, which is associated with Visvesvaraya
Technological University (VTU) in Belagavi, Karnataka, India. His academic contributions
include more than 20 articles in journals and conferences indexed by Scopus. His notable
achievements include winning the IEEE Mysurucon-2022 Champion Award, the Outstanding
Research Contribution award from IEEE ComSoc, and managing an AESS fund grant valued
at Rs. 20,56,000 for projects on aerospace and electronics applications at the same institution.
His research spans several areas, such as communication, network security, VLSI, receiver
design, and microcontrollers. He holds a Graduate Membership with both IEEE and IEEE
AESS. He can be contacted at email: [email protected].

Parameshachari Bidare Divakarachari currently working as a Professor in the


Department of Electronics and communication Engineering at Nitte Meenakshi Institute of
Technology, Bengaluru, Karnataka, India affiliated to Visvesvaraya Technological University
(VTU), Belagavi, Karnataka, India. He is also the visiting Professor for University of Rome
Tor Vergata, Italy. He is currently serving as the Student Activity Committee Chair, IEEE
Bangalore Section. He is also listed in the World’s Top 2% Scientist by Stanford University,
USA for his research works. He has published over 150+ articles in SCI, Scopus and other
indexed journals and also in several international conferences. He is the Associate Editor for
Expert Systems (Wiley), International Journal of Computational Intelligence Systems
(Springer), Wireless Communication and Mobile Computing (Hindawi) and International
Journal of Reconfigurable and Embedded Systems (IAES). He is also serving as editorial
board member, academic editor, and reviewer for several international journals indexed in SCI
and Scopus. He has also served as the lead guest editor for Springer, Elsevier, and IEEE
Journals. Under his guidance, IEEE NMIT SB has received Rs. 20,00,000 funding from IEEE
AESS Society. He can be contacted at email: [email protected].

Int J Reconfigurable & Embedded Syst, Vol. 14, No. 1, March 2025: 208-220

You might also like