A

Mini Project (BEE-554) Report

ON
“THREE PHASE INVERTER USING MICROCONTROLLER”
Submitted in partial fulfillment of the Requirements
for the Award of Degree
of
BACHELOR OF TECHNOLOGY
In
ELECTRICAL ENGINEERING
Submitted
By
HARSH PANDEY (2301620209007)
KANISHK (2301620209008)
Coordinated by
Dr. Dinesh Kumar Singh
(Asst.Professor EED)
DEPARTMENT OF ELECTRICAL ENGINEERING
SHAMBHUNATH INSTITUTE OF ENGINEERING AND TECHNOLOGY,
PRAYAGRAJ (U.P.) – 211015

Affiliated to
DR. APJ ABDUL KALAM TECHNICAL UNIVERSITY LUCKNOW (U.P.),
INDIA
December 2024
 TABLE OF CONTENTS
Content Page no.
Table of Content 1
List of figures 2
Declaration 3
Acknowledgement 4
Abstract 5
Introduction 6
CHAPTER-1 8
1.1 Problems in present time 8
1.2 Inverter (DC to AC) 9
1.3 PWM signals 10
CHAPTER-2 12
2.1 Material used 12
2.2 Arduino UNO 12
2.21 Technical specifications 13
2.3 Power MOSFET (IRF540N) 14
2.4 Power MOSFET (IRF9540N) 15
2.5 BJT (BC548N) 17
2.6 BJT (BC558N) 18
2.7 Resistor 18
2.8 DC Source (9 Volts) 21
CHAPTER -3 23
3.1 System block diagram 23
3.2 Circuit diagram 24
CHAPTER-4 25
4.1 Results and discussion 25
4.2 Practical Simulation 25
CHAPTER-5 26
5.1 Conclusion 26
CHAPTER-6 27
6.1 Future scope 27
REFERENCES 28

1
 LIST OF FIGURES
Figures Page no.
1.1 Clssificaton of power electronics circuitry 8
1.2 Basic 3 phase inverter block diagram 9
1.3 General PWM signals genrated by arduino 11
2.1 Pinout of Arduino UNO(top view) 13
2.2 IRF540N pinout 14
2.3 IRF 9540N pinout 16
2.4 pin dgram of BC548N 17
2.5 Pindigram of BC558N 18
2.6 Typical Resistor 19
2.7 SMT resistors 20
2.8 PP3 9v battery with plig 21
2.9 Different sizes of PP battery family 22
3.1 Block diagram of the system 23
3.2 Cicuit diagram of the system 24
4.1 Output of the system 25
4.2 Real life model of the project 25

2
 DECLARATION
I hereby declare that the mini project report titled “THREE PHASE INVERTER
USING MICROCONTROLLER” is our original work carried out under the
guidance of Dr. Dinesh Kumar Singh, at Shambhunath Institute of Engineering
and Technology Prayagraj.The project was conducted as a partial fulfillment of the
requirements for the Bachelor in Department of Electrical Engineering.
I affirm that no portion of our work is plagiarized, and the experiments and
results reported in report are not manipulated. In the event of a complaint of
plagiarism and manipulation of the experiments and results, we shall be fully
responsible and answerable.

HARSH PANDEY (2301620209007)

KANISHK (2301620209008)
Prayagraj
Date:17/12/2024

3
 AKNOWLEDGEMENT

I owe soulful thanks to almighty for endowing his immense blessing that helped me
toward the successful completion of my project.

We gratefully acknowledge for the assistance, cooperation, guidance and

clarifications by during the development “Three Phase Inverter Using
Microcontrolller” project. Our extreme gratitude to Dr. Dinesh Kumar Singh who
guided us throughout the project. Without his willing disposition, spirit of
accommodation, frankness, timely clarification and above all faith in us, this project
could not have been completed in due time.

His Readiness to discuss all important matters at work deserves special attention. We
would also like to thank whole of the faculty of the institute for their cooperation and
important support.Sincerely I express my deep feeling to my friend who rendered a
helping hand in the hour of need.I am indebted to my parent for their moral and
personal sacrifice to see me through this project work.I express sincere thanks to my
friend for their friendship and unconditional support in my project.They include
VIVEK RANJAN, UTKARSHA, PAWAN KUMAR, SATYAM KESHARWANI
AND SAURABH VERMA and ALL CLASSMATES.I am also thankful to all
Electrical engineering staff who contribute directly and indirectly in various ways for
my project finally.I express my deepest gratitude to my teacher.Their continual
support and encouragement my my research life has allowed me to pursue this
academic degree.

HARSH PANDEY (2301620209007)

KANISHK (2301620209008)
Prayagraj
Date:17/12/2024

4
 ABSTRACT

Rapid depletion of fossil fuel reserves, and concerns over climate change have
encouraged power generation from sustainable energy based micro-grids. And to
address the necessity of three-phase inverters in micro-grid systems or sustainable-
powered households, an Arduino-based three-phase inverter using MOSFET is
designed, which converts DC into three-phase AC power. The designed system
generates 12V square signals at each phase from a 12V battery through switching of
three stages of power MOSFETs using pulse width modulation (PWM) signals at their
gates from an Arduino Uno. Each stage of power MOSFETs consists of four
transistors making it twelve in total, which are used to perform the inversion process
separately for each three single-phase connections. The system is programmed using
an Arduino Uno to generate PWM signals and to keep 120 degrees phase
displacement among each phase. Three step-up transformers are coupled at the
outputs of MOSFET stages for amplification. The system generates 20.78V of voltage
for the three-phase line delivering 0.58A of current using a 7W load at each phases.
The design and simulation of the electronic circuit are done by Proteus 8 demo, and
the programming codes are written using Arduino IDE. The designed system is
theoretically contrasted and verified.

5
 INTRODUCTION

In this era of booming technology and electrification, escalated demand for electric
power has put the power generation and management system in a challenging
situation. And with escalated regulation on CO2 (carbon dioxide) emission worldwide,
the traditional power generation and management system will not be able to withstand
the challenge. This is why humankind started to search for the substitution of the
current power generation system . Moreover, as humanity is more and more
dependent on electricity, the energy demand has been increasing which creates
complications for the power distribution system, like instability of the grid and power
grid and power outages. The need of generating enough energy and awareness in
sustainable technologies yield an accelerated improvement in power distribution
systems involving renewable energy, and the micro-grid system is a promising
outcome of it, which have the potential of addressing several concerns faced by
traditional power systems. A Micro-grid is defined as a low-voltage (LV) distribution
network that includes distributed generators (DGs), energy storage devices, and
controllable loads that can be operated either interconnected or isolated from the main
power grid. Micro-grids hold the potential of being very reliable and economically
sustainable power systems that can significantly improve the ecofriendliness,
efficiency, and resiliency of a system.

Micro-grids can include micro-sources like photovoltaic or solar arrays,wind

generators, micro-turbines, biomass, geothermal, steam or gas turbines, fuel cells, and
reciprocation internal combustion engines. Energy storage devices in micro-grids may
include batteries, flywheels, and energy capacitors (super-capacitors). Besides storing
the energy from renewable sources, the role of the storage devices in micro-grids is to
keep a balance between energy generation and consumption. Since storage devices
store energy in the form of DC electrical power, an inversion system is required to run
the AC appliances, power tools in households or industrial facilities.

An inversion system or an inverter is an electronic device that converts DC into AC

power maintaining a preferred voltage and frequency,where the output AC power can
be a sine wave or other forms of the signal.Inverters can be made with different
numbers of output phases. However, in practice, single-phase and three-phase

6
inverters are most commonly used.Construction-wise three-phase inverters can be two
types: Three-phase Bridge Inverter, and Three Single-phase Parallel Inverter.

Square-wave Inverters, Pulse-width Modulated (PWM) Inverters, and Single phase

Inverters with Voltage Cancellation. This paper describes the design of a Pulse-width
Modulated VSI. PWM is the method used for switching devices to produce the effect
of continuously changing analog signals. This method has a very high electrical
efficiency. Three PWM techniques are usually seen in electronic design: Single-pulse
Modulation, Multiple pulse Modulation, and Sinusoidal Pulse-width Modulation. In
an Inverter, the PWM is usually done using power semiconductor switches e.g.
IGBTs, MOSFETs, and BJTs; and there are several methods for doing it to get the
output AC signal closely similar to a sine wave.

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 CHAPTER-1
1.1 PROBLEMS IN PRESENT TIME
Current trends in the energy generation towards green, sustainable and renewable
energy have become essential in reducing the dependency on fossil fuels.The demand
of energy have become essential in reducing the dependency on fossil fuels. The
demand of energy consumption using renewable energy sources has been forecasted
to increase by 32% in the year 2030. These energy sources generally produce
produce power in the form of direct current (DC) signal while most of the application
is driven by an alternating current (AC) signal. Thus, power electronics circuits that
can can convert convert energy from one form to another become a necessity.An
inverter is required to convert the DC power to an AC power. Typically, there are two
parts involved in the power electronic application. The power and control block which
are being implemented depending on the application.

Fig 1.1 Classification power electronics circuitry

The progression of power electronic devices and microprocessor technology has

significantly contributed to the expansion of solid-state power switching devices.
These devices come in a compact size, incorporating various material designs for
weight reduction and increased power output density. This advancement has led to
lower costs and enhanced overall performance, rendering them increasingly feasible.

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1.2 Inverter (DC to AC)

The single-phase voltage source inverter (VSI) is commonly utilized in low-power

applications, whereas the three-phase VSI is employed for medium to high-power
applications. The primary objective of three-phase inverter topologies is to furnish a
three-phase voltage source, wherein the magnitude, phase, and frequency of the
voltages can be controlled to a specific extent. The fundamental configuration of the
inverter system comprises a power supply unit where the input for the inverter source,
whether in AC (rectified) or DC voltage, is directed towards the power block (VSI).
This results in the generation of an AC Voltage output to the connected load,
contingent upon the supplied DC bus.

The typical three-phase VSI topology commonly known as six-step VSI is shown in
Figure 1.2.

Figure 1.2 Basic 3 - phase inverter block diagram.

VSIs can be categorized into three types: Square-wave Inverters, Pulse-width

Modulated (PWM) Inverters, and Single phase Inverters with Voltage Cancellation.
This paper describes the design of a Pulse-width Modulated VSI. A basic three-phase
inverter is shown above figure.
PWM is the technique utilized for modulating devices to simulate the continuous
variation of analog signals. This approach boasts exceptional electrical efficiency.
Electronic design commonly incorporates three PWM methods: Single-pulse
Modulation, Multiple-pulse Modulation, and Sinusoidal Pulse-width Modulation .
Within an Inverter, PWM is typically executed using power semiconductor switches
such as IGBTs, MOSFETs, and BJTs. Various techniques are employed to

9
approximate the output AC signal to a sine wave. The inverter predominantly
regulates the output frequency, with the input voltage dictating the output magnitude .
The inverter's output voltage can either be fixed or adjustable at a consistent or
varying frequency.

When the direct current (DC) input voltage remains constant and uncontrollable,
adjusting the output voltage can be achieved by modifying the frequency of the
inverter, typically through the utilization of Pulse Width Modulation (PWM). The
output signal generated by an inverter takes the form of an alternating waveform,
which may not inherently exhibit a pure sinusoidal pattern. However, through the
application of various techniques, the inverter can be engineered to produce an output
waveform that closely resembles a sinusoidal wave [12]. PWM methodologies are
applicable to both single-phase and three-phase inverters. In the case of three-phase
inverters, modulation must be concurrently executed for each phase, incorporating
differing angular displacements such as 120 degrees, 150 degrees, or 180 degrees,
based on the desired electrical efficiency [9], [14]. The current study adopts Single-
pulse Modulation with a 120-degree displacement, utilizing Metal-Oxide-
Semiconductor Field-Effect Transistors (MOSFETs) for its implementation.

1.3 PWM Signals (Pulse Width Modulation)

Pulse-width modulation (PWM), also known as pulse-duration modulation (PDM)

or pulse-length modulation (PLM) is any method of representing a signal as
a rectangular wave with a varying duty cycle.PWM is useful for controlling the
average power or amplitude delivered by an electrical signal. The average value
of voltage (and current) fed to the load is controlled by switching the supply between
0 and 100% at a rate faster than it takes the load to change significantly. The longer
the switch is on, the higher the total power supplied to the load.

PWM signals can be generated in different ways e.g. using op-amps, 555 timers,
micro-controllers, or Arduino. Arduino is essentially also a microcontroller; it is an
open-source platform that consists of a microcontroller chip. Arduino is designed to
provide an inexpensive and easy way to program electronic devices that interact with
their surrounding environment by using sensors or other means of input data . The
presented work uses Arduino Uno for the required task.

10
 Fig 1.3 General PWM signals Generated by Arduino

The general purpose microcontroller Arduino enables customization of Pulse Width

Modulation (PWM). Furthermore, there is a necessity for research concerning the
utilization of Arduino in addressing the dynamic and intricate nature of induction
motor control behavior. Hence, this thesis opts for the cost-effective open-source
hardware and software of the Arduino platform to function as a power electronics
controller and drive the three-phase full bridge inverter for induction machine
applications while monitoring the system design's performance.

11
 CHAPTER-2
2.1 MATERIALS USED
The designed inverter involves an Arduino Uno as the brain of the system and to
produce PWM signals, Power MOSFETs to create AC signals, and center-tapped
step up transformers to amplify the output. As per the focus of this paper, a brief
explanation of Arduino Uno R3 and Power MOSFETs (IRF Z44N) are provided
below, followed by a detailed list of system components, and the system block
diagram.

S.N. NAME OF COMPONENT MODEL NAME QUANTITY

1 Atmega 328P Microncontroller Arduino UNO 1
2 MOSFET IRF 540N 3
3 MOSFET IRF9540N 3
4 Resistor 4.7K, 1/4 watt 3
5 BJT BC548N 3
6 BJT BC558N 3
7 Battery 9V 2
Table 2.1 Components used in this design.

2.2 ARDUINO UNO

Arduino is a single-board microcontroller-based open-source platform designed to
facilitate and implement electronic processes, thus making interdisciplinary research
more accessible. The hardware of Arduino consists of an 8-bit Atmel AVR
microcontroller with onboard I/O support, while the software includes a standard
language (programming C) and the bootloader that operates on the board .
The Arduino Uno, part of the Arduino series, is built around the ATmega328P
microcontroller. It features 14 digital input/output pins (6 of which can function as
PWM outputs), 6 analog inputs, an ICSP header, a 16 MHz crystal oscillator, a power
jack, a USB connection, and a reset button. The Arduino Uno board can be powered
by a DC supply ranging from 6 to 20 volts. The Arduino Uno R3, the most recent
version in the Arduino Uno series, is utilized in the research discussed in this paper.
In addition to the characteristics of its predecessor, the Arduino Uno R3 employs an

12
 Fig 2.1 Pinouts of Arduino UNO (Top View)

ATmega16U2 (USB-to-Serial converter) instead of the 8U2 or FTDI present in earlier

versions, enabling increased memory capacity and faster data transfer rates.
2.2.1.TECHNICAL SPECIFICATIONS
 Microcontroller: ATmega328P
 Operating Voltage: 5V
 Input Voltage (recommended): 7-12V
 Inout Voltage (limit): 6-20V
 Digital I/O Pins: 14 (of which 6 provide PWM output)
 PWM Digital I/O Pins: 6
 Analog Input Pins: 6
 DC Current per I/O Pin: 20 mA
 DC current for 3.3V Pin: 50 mA
 Flash Memory: 32 KB (ATmega328P) of which 0.5 KB used by bootloader
 SRAM: 2 KB (ATmega328P)
 EEPROM: 1 KB (ATmega328P)
 Clock Speed: 16 MHz
 LED_BUILTIN: 13
 Length: 68.6 mm
 Width: 58.4 mm
 Weight: 25 g

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2.3 POWER MOSFET (IRF540N)

The metal-oxide semiconductor field-effect transistor (MOSFET, pronounced

MAWS-feht) is the most common type of field-effect transistor (FET). They act as
electrical switches and amplifiers controlling the amount of electricity that can flow
between the source and drain terminals based on the voltage applied to the gate
terminal.MOSFET is the underlying technology for most discrete transistors, digital
logic, integrated circuits (IC) and thin-film transistor (TFT) LCDs. They are the
workhorse in modern electronics and are considered the most manufactured item in
human history.

A MOSFET consists of four terminals: the source, the drain, the gate and the base.
Commonly the base is connected to the source terminal. The substrate, source and
drain consist of either positive or negative doped semiconductors. The metal (or
conductive silicon) gate terminal is separated from these by a nonconductive oxide
layer. By applying voltage to the gate, it changes the electrical properties of the
semiconductor underlying, either allowing or inhibiting the flow of electricity
between the source and drain.

Fig 2.2 IRF540N Pinout

An advanced HEXFET power MOSFET like IRF540N is from

International Rectifier that uses very complex processing methods to attain very low
on-resistance for each ‘Si’ area. The main advantage is the quick switching speed,
strong device design, and provide a very efficient, reliable device to the designer to
use in different applications.

14
The TO-220 package is commonly chosen for commercial-based industrial
applications. The fewer packages cost and less thermal resistance of this package will
give to its broad acceptance all over the industry.

FEATURES & SPECIFICATIONS

The features and Specifications of IRF540N MOSFET include the following

 N-Channel MOSFET with small signal

 Completely resistant against peak surge/ avalanche currents.
 Drain current (ID) is continuous like 33A at 25°C
 The tolerance capacity of operating temperature is high like 175oCelsius.
 Pulsed Drain Current is 110A
 Switching capacity is very quick
 Gate threshold voltage Min is 2V
 The technology used in this IC is cutting-edge, sophisticated.
 Gate threshold voltage Max is 4V
 It is accessible in the To-220 package
 Voltage from Gate to Source VGS is ±20V
 It is used with the Arduino board because of its fewer thresholds current.
 Voltage from Drain to Source VDS is 100V
 Very less resistance
 Time to Turn ON & OFF as 35ns
Equivalent IRF540N MOSFETs are IRFZ44, RFP30N06, IRF3205 & 2N3055.

2.4 POWER MOSFET (IRF9540N)

Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The
low thermal resistance and low package cost of the TO-220 contribute to
its wide acceptance throughout the industry.

15
 Fig 2.3 IRF 9540N Pinout

FEATURES & SPECIFICATIONS

The features and Specifications of IRF9540N MOSFET include the following:

 P-channel MOSFET
 Dynamic dv/dt rating
 Low threshold voltage
 High-speed switching
 Low turn-on resistance
 Repetitive avalanche rated
 Simple drive requirement
 Ease of paralleling
 Drain-to-source voltage VDS: -100 V
 Maximum Continuous drain current ID: -19 A
 Maximum Pulse drain current: -72 A
 Maximum Power dissipation PD: 150 W
 Gate-to-source voltage VGS: ±20 V
 Peak diode recovery dv/dt: -5.5 V/ns
 Total gate charge QG: 61 nC
 On-state resistance RDS: 0.20 Ω
 Operating temperature range: -55 to +175 ˚C
 Transistor Polarity: P-channel
 Package: TO-220AB

SWITCHING CHARACTERISTICS

 Turn-on delay time Td(on) = 16 nsec

 Rise time Tr = 73 nsec
 Fall time Tf = 57 nsec
 Turn-off delay time Td(off) = 34 nsec

16
2.5 BJT (BC548N)

A bipolar junction transistor (BJT) is a type of transistor that uses

both electrons and electron holes as charge carriers. In contrast, a unipolar transistor,
such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar
transistor allows a small current injected at one of its terminals to control a much
larger current between the remaining two terminals, making the device capable
of amplification or switching.

The BC548 is a general-purpose NPN bipolar junction transistor commonly used in

European and American electronic equipment. It is notably often the first type of
bipolar transistor hobbyists encounter and is often featured in designs in hobby
electronics magazines where a general-purpose transistor is required. The BC548 is
low in cost and widely available.

Fig 2.4 Pin diagram of BC548N

TECHNICAL SPECIFICATIONS

 Type: NPN BJT (Bipolar Junction Transistor)

 Collector-Emitter Voltage (Vceo): 30V
 Collector-Base Voltage (Vcbo): 30V
 Emitter-Base Voltage (Vebo): 5V
 Continuous Collector Current (Ic): 100mA
 Power Dissipation (Pd): 500mW
 DC Current Gain (hFE): 110 to 800
 Transition Frequency (fT): 150 MHz

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 Saturation Voltage (Vce(sat)): 0.2V.
 Base-Emitter Voltage (Vbe(on)): 0.6V to 0.7V
 Collector Cutoff Current (Icbo): 15nA
 Emitter Cutoff Current (Iebo): 15nA
 Package Type: TO-92.
 Operating Temperature: -55°C to +150°C
 Noise Figure (NF): 2dB to 10dB.

2.6 BJT (BC558N)

BC558 is a PNP family-based bipolar junction transistor, used in switching &

amplification-based applications. It includes three terminals that are collector, base &
emitter which are dissimilar in terms of doping concentrations, functions, and size.

This transistor is composed of 3-layers P, N & P where the ‘N’ layer is arranged in
between two ‘P’ layers. The amplification factors of this transistor range from 110 –
800 which calculates the amplification capacity of the transistor.

Fig 2.5 Pin diagram of BC558N

2.7 RESISTOR

Resistor is defined as. A passive electrical component with two terminals that are used
for either limiting or regulating the flow of electric current in electrical circuits. The
main purpose of resistor is to reduce the current flow and to lower the voltage in any
particular portion of the circuit.

18
 Fig 2.6 Typical Resistors

Practical resistors have a series inductance and a small parallel capacitance; these
specifications can be important in high-frequency applications. And while even an
ideal resistor inherently has Johnson noise, some resistors have
worse noise characteristics and so may be an issue for low-noise amplifiers or
other sensitive electronics.

In some precision applications, the temperature coefficient of the resistance may also
be of concern.

COLOUR CODE

Colour Digit Multiplier Tolerance

Black 0 1

Brown 1 10 ± 1%

Red 2 100 ± 2%

Orange 3 1000

Yellow 4 10,000

Green 5 100,000 ± 0.5%

Blue 6 1,00,000 ± 0.25%

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Violet 7 10,000,000 ± 0.1%

Grey 8 ± 0.05%

White 9

Gold 0.1 ± 5%

Silver 0.01 ± 10%

Table 2.2 Colour coding chart for conventional resistors

SMT RESISTORS

Fig. 2.7 SMT resistors

Surface mounted resistors of larger sizes are printed with numerical values in a code
related to that used on axial resistors. Standard-tolerance surface-mount technology
(SMT) resistors are marked with a three-digit code, in which the first two digits are
the first two significant digits of the value and the third digit is the power of ten.For
example:

334 = 33 × 104 Ω = 330 kΩ , 105 = 10 × 105 Ω = 1 MΩ

Resistances less than 100 Ω are written: 100, 220, 470. The final zero represents ten
to the power zero, which is 1. For example:

100 = 10 × 100 Ω = 10 Ω, 220 = 22 × 100 Ω = 22 Ω

Sometimes these values are marked as 10 or 22 to prevent a mistake.Resistances less
than 10 Ω have 'R' to indicate the position of the decimal point (radix point). For
example:

4R7 = 4.7 Ω, R300 = 0.30 Ω, 0R22 = 0.22 Ω, 0R01 = 0.01 Ω

20
2.8 DC SOURCE (9 Volts)
The nine-volt battery, or 9-volt battery, is an electric battery that supplies a nominal
voltage of 9 volts. Actual voltage measures 7.2 to 9.6 volts, depending on battery
chemistry. Batteries of various sizes and capacities are manufactured; a very common
size is known as PP3, introduced for early transistor radios. The PP3 has a rectangular
prism shape with rounded edges and two polarized snap connectors on the top. This
type is commonly used for many applications including household uses such
as smoke and gas detectors, clocks, and toys.

Fig. 2.8 PP3 9V battery with plug

Only the PP3, PP6, PP7 and PP9 sizes are still manufactured, with the PP3 being
extremely common. Modern batteries have higher capacities and lower internal
resistances than early versions.
Power pack (PP) battery family
Name Voltage Capacity Depth Width Height
PP1 6 volt 4 Ah 55.6 mm 65.1 mm 55.6 mm
PP3 9 volt 0.5 Ah 17.5 mm 26.5 mm 48.5 mm
Dia. 25.8 mm, length: 49.8 mm; 41.5 mm ex.
PP4 9 volt 0.9 Ah
contacts
PP6 9 volt 1 Ah 34.1 mm 35.7 mm 69.9 mm
PP7 9 volt 2.5 Ah 46 mm 46 mm 63 mm
PP8 6 volt 15 Ah 55 mm 61 mm 200 mm
PP9 9 volt 5 Ah 51.5 mm 65 mm 80 mm
PP10 9 volt 15 Ah 66 mm 65 mm 267 mm
4.5 volt × 91 mm
PP11 5 Ah 51.5 mm 65 mm
2
Table 2.2 Different sizes of PP battery family

21
Fig. 2.9 Different sizes of PP battery family

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 CHAPTER-3
3.1 SYSTEM BLOCK DIARAM

A block diagram is very effective in having a high level view and understanding of a
system quickly. So, to provide an overall easy visualization of the whole system
presented in this paper including all its peripheral devices a block diagram is provided
in Fig. 3.1. According to the diagram, the DC power accumulated in the battery from
a micro-grid or renewable energy source is to be converted into AC power separately
through three legs. Where each leg consists of a stage of power MOSFETs.

Fig. 3.1 Block diagram of the system

The main concept of the process or the working principle of the system can be
described as following: The DC power from the battery is fed to the stage of
MOSFETs, which is to be converted into AC. Since the MOSFETs are acting as
switches, their gate pulses are controlled by the Arduino through PWM signals. By
making the MOSFETs ON and OFF through their gate pulses the DC power is
converted to AC at their outputs. The Arduino is programmed in such a way so that
the output signals of the MOSFET stages have a 120 degrees phase displacement
among them. Finally, the alternating output signals of MOSFET stages can be
amplified individually through step-up transformers to drive 220V loads. The outputs
are square waves according to the design.

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3.2 CIRCUIT DIAGRAM

Fig. 3.2 Circuit diagram of the system

As mentioned above, a three-phase inverter can be built by inverting three single-
phase connections separately, as long as they have a certain phase displacement
among them. The three-phase inverter in Fig. 3.2 is designed with 120 degrees phase
displacement with PWM applied to each phase separately by the Arduino In Fig.3.2
each single-phase connection is called a leg for simplicity; where each leg contains 2
(two) power MOSFETs (nMOS and pMOS) connected to the Arduino to do the
inversion through switching. The number of MOSFETs can vary depending on the
power requirement. The presented work uses total 6 of MOSFETs.Each leg
incorporates a step-up transformer coupled with the output of MOSFETs to amplify
the voltage to 223V from an input voltage of 9V.

All the circuit components like the battery, Arduino, MOSFETs, and transformers, in
Fig.3.2 are shown with their interconnection in different colors for easier
understanding.The drain of each three MOSFET bridges are connected to the negative
terminal of the battery and the gates of the MOSFETs are connected to the digital
output (PWM) of the Arduino. When Arduino generates gate pulses, the MOSFETs
convert direct current (DC) to alternative current (AC) through switching, and current
starts to rise in the MOSFETs which makes each transformer to generate EMF,
opposing the EMF of the battery.

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 CHAPTER-4
4.1 RESULTS AND DISCUSSION
To verify and investigate the operation of the system, the designed system is
simulated in Proteus 8.9 Professional. The results are verified according to the written
program codes and their working principle, which satisfy the expected outcome. The
screenshot of the simulation that represents the operational analysis is provided in
Fig.4.1

Fig. 4.1 Output of the system

4.2 PRACTICAL SIMULATION

Fig. 4.2 Real life model of the project

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 CHAPTER-5
CONCLUSION

An Arduino-based three-phase inverter is designed and implemented using power

MOSFET, which generates 9V square signals at its output from a 9V battery. The
system is verified in different ways and proven functional, and useful in the microgrid
system.

The designed system is also practically constructed and tested to be operational as per
the concept. The system takes 9V of voltage from a battery for the inversion process,
while the Arduino operates on 9V through a separate voltage source. The system uses
a total of 6 power MOSFETs for the inversion process in three single-phase
connections separately.

The designed inverter can be applied in a micro grid system or sustainable-powered

household and small industrial facility where most electrical tools require three-phase
connections.

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 CHAPTER-6
FUTURE SCOPE

Every engineering projects have some kind of scopes to improve or extend them, and
the work presented in this paper is not an exception. The future scopes of this work
may involve.

(i) Changing the number of power MOSFETs and analyze the output changes or
improvements,

(ii) Designing a filter to convert the square output signal into sinusoidal,

(iii) Changing the Arduino programming to generate sinusoidal output without

adding a filter,

27
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