POWER ELECTRONICS

Y2 ELT & ETT

Lecturer: Francois KARANGUZA

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Content outline

• LU1:ILLUSTRATE POWER SEMICONDUCTOR DEVICES

• LU2: APPLY POWER CONVERSION TECHNIQUES

• LU3: PERFORM TECHNICAL APPLICATION OF POWER CONVERTERS

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 OBJECTIVES

By the end of this module, student should be able to:

Understand well the working and application of
▪ Power electronics
▪ Power semiconductor devices
▪ Phase Controlled Rectifiers
▪ Choppers
▪ Inverters
▪ AC Voltage controller
▪ Cycloconverters

POWER ELECTRONICS MODULE _Y2 ELT & ETT

LU1. ILLUSTRATE POWER SEMICONDUCTOR
DEVICES

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Introduction

• The term power electronics has been used since the 1960s, after the
introduction of the silicon controlled rectifier (SCR).
• Power electronics has shown rapid growth in recent years with the
development of power semiconductor devices that can switch large currents
efficiently at high voltages.
• The systems and machines of our world depend on power electronics for the
ability to run efficiently and sustainably.
• Power electronics is the application of solid-state electronics for the control
and conversion of electric power.
• It applies to both the systems and products involved in converting and
controlling the flow of electrical energy, allowing the electricity needed for
everyday products to be delivered with maximum efficiency in the smallest
and lightest package.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Introduction(con’t)

Power Electronics and Everyday Devices

• Not only are power electronics used to deliver and control power in the electric grid, but they are also
used in numerous everyday devices. Everything from power steering in your car, battery chargers, cell
phones, and microwaves utilize power electronics. The use of this technology can increase productivity
and decrease costs for the manufacturer and the consumer.

Electrical Energy

• About 40% of the world’s power needs are met by electrical energy. That number is quickly rising as the
trend towards renewable energy sources increases. Without power electronics, this energy cannot be
harnessed and delivered efficiently and energy from renewable sources, such as solar and wind, could
not be fed into the electricity grid.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Introduction(con’t)

Power Electronics Conserve Energy

• Power electronics also allow for the variance of electric motor drive speeds,
reducing the amount of energy consumed by making processes more efficient.
Without this technology electric motors would always run at full speed
consuming more energy than necessary.
• Power electronics converters also conserve energy by making it possible to
transport electricity over long distances with minimal loss by transforming
alternating current (AC) into high-voltage direct current (HVDC) and vice-versa.
• Advances in power electronics allow power to be delivered in a more
dependable and less costly manner saving both energy and costs for the
consumer.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Definitions

▪ Power Electronics is the application of solid state (devices) electronics for

the control and conversion of electric power suitable to the load.

▪ Power electronics deals with the application of power semiconductor devices

for the conversion and control of electrical energy at high power levels.

▪ Power electronics is a technology that deals with the conversion and control of
electrical power with high efficiency switching mode electronic devices.

▪ A power semiconductor device is a semiconductor device used as a switch to

convert and control electric energy at high power levels.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

POWER ELECTRONICS MODULE _Y2 ELT & ETT
 Types of power electronic circuits

• Power electronic converters

The power electronic converters can be classified into

six types:
1. Diode rectifiers
2. AC-DC converters (controlled rectifiers)
3. AC-AC converters (ac voltage controllers)
4. DC-DC converters (dc choppers)
5. DC-AC converters (inverters)
6. Static switches

POWER ELECTRONICS MODULE _Y2 ELT & ETT

Application of power electronics

POWER ELECTRONICS MODULE _Y2 ELT & ETT

Other applications of power electronics

POWER ELECTRONICS MODULE _Y2 ELT & ETT

POWER SEMICONDUCTOR DEVICES

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Power semiconductor devices

• The power semiconductor devices that are generally used in converters can be
grouped as follows:

▪ Diode rectifiers,
▪ Power transistors and
▪ Thyristors

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Power semiconductor devices

Power semiconductor devices are the most important elements in a power

electronics circuit. The major types of semiconductor devices used as switches in
power electronics circuits are:
▪ Power diodes,
▪ Power Bipolar junction transistors (BJT),
▪ Power Metal-oxide semiconductor field-effect transistors (MOSFET),
▪ Insulated-gate bipolar transistors (IGBT),
▪ Silicon controlled rectifiers (SCR),
▪ Diacs,
▪ Triacs,
▪ Gate-turn off thyristors (GTO) and
▪ The MOS-controlled thyristors (MCT)
In power electronics, these devices are operated in the switching mode.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Power Semiconductor Devices Classification

Semiconductor devices having high voltage and current ratings are known as Power
Semiconductor Devices.
A) Based on Turn ON and Turn OFF Capability:
1) Uncontrollable power semiconductor devices
• Ex: Diode: The ON and OFF state are not depend on the control signal. They depend
on the power source.
2) Partially controllable power semiconductor devices
• Ex: SCR, TRIAC, and DIAC -They are turned ON by applying gate signal. But these
devices cannot be turned OFF with the help of gate signals. They are turned off by
load or by commutation.
3) Fully controllable power semiconductor devices
• Ex: Power BJT, MOSFET, IGBT, GTO. These devices can be both turned ON and turned
OFF by applying gate signals

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Power Semiconductor Devices Classification

B)Based on Gate signal:

i) Pulse gate requirement
Example: SCR, GTO, MCT
• To Turn ON these devices, pulse voltage is applied as a control signal. Once the
device is turned on, the gate pulse is not required and thus removed.
ii) Continuous gate requirement
• Example: BJT, MOSFET, IGBT
• For these devices, continuous gate signal is required to maintain them in ON
state.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Power Semiconductor Devices Classification

C)Based on Current Conduction Capability:

1) Unidirectional Current Devices
• Ex: SCR, GTO, BJT, MOSFET, IGBT
2) Bidirectional Current Devices
• Ex: TRIAC
D)Based on Voltage withstanding ability:
1) Unipolar voltage withstanding devices
• Ex: BJT, MOSFET, IGBT
2) Bipolar voltage withstanding devices
• Ex: SCR, GTO

POWER ELECTRONICS MODULE _Y2 ELT & ETT

POWER SEMICONDUCTOR DEVICES
DIODES AND TRANSISTORS

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 POWER DIODE

• A diode is a two-layer p-n semiconductor device.

• If a reverse voltage is applied across the diode, it behaves essentially as an open
circuit.
• If a forward voltage is applied, it starts conducting and behaves essentially as a
closed switch.
• It can provide uncontrolled ac to dc power rectification.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 A power diode
• Power diodes are similar to signal diodes but have a little difference in its construction.
• In signal diodes the doping level of both P and N sides is same and hence we get a PN
junction.
• In power diodes we have a junction formed between a heavily doped P+ and a lightly
doped N- layer which is grown on a heavily doped N+ layer.
• The N- layer is the key feature of the power diode which makes it suitable for high
power applications.
• This layer is very lightly doped, almost intrinsic.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 A signal diode

• The ordinary signal diodes have a junction formed by P type

semiconductor and P type semiconductor, the lead joining P type is called
anode and the other side lead joining the N type is called cathode.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 V-I Characteristics of Power Diodes

• The V-I characteristics of a power diode which is almost similar to that of a signal
diode.
• In signal diodes for forward biased region the current increases exponentially.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 V-I characteristics of a power diode

• In power diodes high forward current leads to high ohmic drop which
dominates the exponential growth and the curve increases almost linearly.
• The maximum reverse voltage that the diode can withstand is depicted by
VRRM, i.e. peak reverse repetitive voltage.
• Above this voltage the reverse current becomes very high abruptly and as
the diode is not designed to dissipate such high amount of heat, it may get
destroyed.
• This voltage may also be called as peak inverse voltage (PIV).

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Diode ratings or specifications
Peak inverse voltage (PIV)
• It is the maximum reverse voltage that can be connected across a diode without
breakdown.
• If the PIV rating is exceeded, the diode beings conduct in the reverse direction
and can be immediately destroyed.
• It is also called the peak reverse voltage (PRV) or breakdown voltage (BRV),
Maximum reverse voltage (VRM)
• Average Forward Current: It is the continuous forward current which the diode
can pass at the normal temperature (usually 250c). It is written as IF(av).
• It also called maximum steady state forward current (IFM).
• It is also known as the repetitive forward current that is current which the diode
can safely handle continuously.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Diode ratings or specifications

• Forward surge current (IFS): Surge current is defined as that large

current which a diode can safely take for every short time.
• Maximum forward voltage (VFM): Is the maximum forward
voltage that the diode can have without burn-out.
• Forward voltage(VF): It is the forward voltage of the diode at
given temperature and for specific value of forward current.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Diode ratings or specifications

• Reverse current(IR): It is the maximum reverse saturation current

at the maximum reverse voltage at given temperature.
• Power dissipation: It is given as the maximum power that the
diode can safely dissipate on a continuous basis in free air at
250c.
• Reverse recovery time (trr): It is the maximum time taken by the
device to switch from ON to OFF. It is usually in nanosecond.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Types of power diodes

There are 3 types of power diodes:

i. General purpose diodes

ii. Fast recovery diodes
iii. Schottky diodes

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Types of power diodes

1) General purpose diodes:

• These diodes have high reverse recovery time about 25µs.
• Hence these are used in low speed applications such as rectifiers and
converters.
• The ratings are 1A/50V to 1000A/500V.
2) Fast recovery diodes:
• These diodes have the reverse recovery time less than 5µs.
• Hence these diodes are used in high speed applications such as choppers and
inverters.
• Their ratings are 1A/50V to 100A/3kV.
Q: Which property which helps the fast recovery diode to work in high speed
applications?

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Types of power diodes

3) Schottky diodes:
• In Schottky diodes, the pn junction is eliminated. A metal is placed directly on the
semiconductor as shown in figure.
• Aluminum is deposited on n-type semiconductor.
• The metal is anode and semiconductor is cathode
• Since there is no PN junction, the storage time is absent.
• Hence turn-off time is very small.
• So Schottky diodes have high switching frequencies.
• Schottky diodes are used in low voltage converters as feedback and freewheeling
diodes.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

Power diodes’ protection:
The power diode must be protected against overvoltage, over current and transients.
❖ Overvoltage protection:
The voltage across the diode becomes dangerous in reverse direction when it becomes greater than the reverse
breakdown voltage. In this condition the PN junction breaks, resulting in large current flow which may destroy
The diode. To avoid this; diode must be selected with PIV rating that is 1.2 times higher than the expected
voltage during normal operating conditions.
❖ Overcurrent protection:
The diode’s current must not exceed the level that will increase the operating temperature beyond the maximum
Value. For this to be accomplished fuses are used.
❖ Transients protection:
Transients can lead to higher voltage than normal voltage across the diode. To protect the diode against transient
Snubber circuits are used

POWER ELECTRONICS MODULE _Y2 ELT & ETT

Operation of RC snubber circuit:
Snubbers are energy-absorbing circuits used to suppress the voltage spikes caused by the circuit's
inductance when a switch, electrical or mechanical, opens. The most common snubber circuit is
a capacitor and resistor connected in series across the switch (transistor).

The voltage across a capacitor cannot change instantaneously, so a decreasing

transient current will flow through it for a small fraction of a second, allowing the
voltage across the switch to increase more slowly when the switch is opened.
Determination of voltage rating can be difficult owing to the nature of transient
waveforms, and may be defined simply by the power rating of the snubber
components and the application. RC snubbers can be made discretely and are also
built as a single component.
Three types of snubber circuits bare frequently used:
✓ RC snubber
✓ Diode snubber and
✓ RCD snubber.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Advantages of power diodes:
The diodes have the following advantages
✓ High mechanical and thermal reliability
✓ High peak inverse voltage
✓ Low reverse current
✓ Low forward voltage drop
✓ High efficiency
Applications of power diodes
✓ Power diodes are used in uncontrolled rectifiers.
✓ Feedback and freewheeling operations in choppers,
✓ Inverters and controlled converters use power diodes.
✓ Almost all the commutating circuits for SCR’s use power diodes
✓ Half controlled converters and half bridge inverters use power diodes.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 ACTIVITY ONE

3) Give the structure of Power diode, and what is the name of the N- layer.
4) What are the two similarities and two differences between Normal diode and Power
diode

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 POWER TRANSISTORS

• Power transistor have controlled turn- ON and turn- OFF characteristics and are used
as switching elements
Here are different types of transistors:
➢Power BJT
➢Power MOSFET
➢IGBT

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Power bipolar junction transistor

• A transistor is a three-layer p-n-p or n-p-n semiconductor device having two junctions.

• The bipolar junction transistor (BJT) has the three terminals: the collector (C), the base
(B), and the emitter (E).
• The collector and emitter terminals are connected to the main power circuit, and the
base terminal is connected to a control signal.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 POWER BJT

• The transistor is turned on by supplying sufficient base current, and this base drive has
to be maintained throughout its conduction period.
• It is turned off by removing the base drive and making the base voltage slightly
negative.
• Power Transistor Symbol: The symbol of the Power BJT is same as signal level
transistor.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Power BJT Structure:

• A Power BJT has a four layer structure.

• It has three terminals labeled as Collector, Base, Emitter.
• In most of Power Electronic applications, the Power Transistor works in Common
Emitter configuration i.e, Base is the input terminal, the Collector is the output
terminal and the Emitter is common between input and output.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Power BJT Structure:

• A power transistor requires a large blocking voltage in the off state and a high
current capability in the on state.
• A vertically oriented four layers structure is preferable because it maximizes the
cross-sectional area through which the current flows, enhancing the on-state
resistance and power dissipation in the device.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Power BJT Structure:
• The construction of the Power Transistor is different from the signal transistor.
• The n- layer is added in the power BJT which is known as drift region.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Power BJT Structure:

• In power switches NPN transistors are most widely used than PNP transistors because
electrons move faster than holes, and therefore, npn transistors have considerable
faster commutation times.
• The characteristics of the device is determined by the doping level in each of the layers
and the thickness of the layers.
• The thickness of the drift region determines the breakdown voltage of the Power
transistor.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Power BJT Structure:

• Transistors can also be operated in the switching mode.

• If the base current IB is zero, the transistor is in an ON state and behaves as an open
switch.
• On the other hand, if the base is driven hard, that is, if the base current IB is sufficient
to drive the transistor into saturation, then the transistor behaves as a closed switch.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Common Emitter Static Characteristics of
BJT

• In most of Power Electronic applications, the Power Transistor works in Common

Emitter configuration i.e, Base is the input terminal, the Collector is the output
terminal and the Emitter is common between input and output.
• Common Emitter Static Characteristics of BJT are:
➢Input characteristic
➢Output characteristic
➢Transfer characteristic

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 (a) Input Characteristic

• It shows how IB varies with changes in VBE when VCE is held constant at a particular
value.
• To begin, voltage VCE is maintained constant at a convenient value and then VBE is
increased in steps. Corresponding values of IB are noted at each step.
• The procedure is then repeated for a different but constant value of VCE.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 (a) Input Characteristic

• The overall shape resembles the forward characteristic of a P-N diode.

• The reciprocal of the slope gives the input
resistance Rin of the transistor.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 (b) Output or Collector Characteristic

• It indicates the way in which IC varies with changes in VCE when IB is held constant.
• For obtaining this characteristic, first IB is set to a convenient value and maintained
constant and then VCE is increased from zero in steps, IC being noted at each step.
• Next, VCE is reduced to zero and IB increased to another convenient value and the
whole procedure repeated.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 (b) Output or Collector Characteristic

• It is seen that as VCE increases from zero, IC rapidly increases to a near saturation level
for a fixed value of IB.
• As shown, a small amount of collector current flows even when IB = 0. It is called ICEO
Since main collector current is zero, the transistor is said to be cut-off.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 (c) Current Transfer Characteristic

• It indicates how IC varies with changes in IB when VCE is held constant at a given value.
• From Fig (b), it is seen that a small collector current flows even when IB = 0.
• It is the common-emitter leakage current ICEO
• Like ICO, it is also due to the flow of minority
carriers across the reverse-biased C/B junction.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 POWER MOSFET

• The MOSFET (metal oxide semiconductor field effect transistor) is a very fast switching
transistor that has shown great promise for applications involving high frequency (up
to 1 MHz) and low power (up to a few kilowatts).
• There are other trade names for this device, such as HEXFET (International Rectifier),
SIMMOS (Siemens), and TIMOS (Motorola).
• The three terminals are called drain (D), source (S), and gate (G).
• The current can flow in both directions, and therefore MOSFET is a bidirectional
device.
• The device has no reverse-voltage blocking capability, and it always comes with an
integrated reverse diode,

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 POWER MOSFET

• The switching characteristics of the MOSFET are similar to those of the BJT.
• However, MOSFETs switch on and off very fast, in less than 50 nanoseconds.
• MOSFETs switch very fast, and they have very low switching losses, which allow them to
operate at very high switching frequencies, as high as 5 MHz
• In the ON state they operate as a constant resistance and not a constant voltage drop (as in a
diode), so their conduction losses are proportional to the drain current squared.
• In low voltage applications, below approximately 50 V, the on-state resistance can be below
10mΩ , so conduction losses can be very low.
• As operating temperature increases, the ON resistance also increases.
• MOSFETs are still not available in high power ratings.
• MOSFETs with ratings of 1000 V, 4 A, or 12 V, 60 A are available. These devices can be used in
parallel for higher current ratings.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Characteristics of MOSFET

1) Transfer Characteristics
• It is shown in Figure that ID flows only when VGS exceeds threshold voltage VGS(th).

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Characteristics of MOSFET

2) Output characteristic
• There are 3 regions of operation:
i) cut-off region
ii) Saturation region
iii) Linear region

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Output characteristic

• In cut-off region, VGS< VTh, thus Io=0

• In saturation region, VDS ≥ VGS – VTh. Now ID is more
• In linear region, the drain current
ID varies is proportional to the
drain source voltage VDS
• Due to high drain current and low
Voltage, the power mosfets are
Operated in the linear region.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Insulated Gate Bipolar Transistor or
IGBT

• IGBT is a three terminal semiconductor device used for switching related

applications.
• IGBT is a combination of Bipolar Junction Transistor (BJT) and Metal oxide
Field effect transistor (MOSFET).
• The other names of this device are GEMFET (Conductivity Modulated FET),
COMFET (Conductivity Modulated Field Effect Transistor), IGT (Insulated
Gate Transistor), bipolar mode MOSFET, bipolar MOS Transistor.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Advantages of IGBT

• The advantage gained by the IGBT over a BJT or MOSFET is that it offers
greater power gain than the standard bipolar type transistor combined
with the higher voltage operation and lower input losses of the MOSFET.
• It has the best combination quality of BJT and MOSFET
• It has high input impedance like MOSFET
• It has low ON state power loss as in BJT

POWER ELECTRONICS MODULE _Y2 ELT & ETT

Symbol and equivalent circuit of IGBT

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Operation of IGBT

• Whenever a voltage between gate and emitter is applied, current flows

from collector to emitter and IGBT is said to be turned ON.
• When gate-emitter voltage is removed, IGBT turns OFF.
• Thus gate has full control over conduction of IGBT.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Characteristics of IGBT

1) Output characteristics
• In the image, I-V characteristics are shown depending on the different gate voltage
Vge. The X axis denotes collector emitter voltage or Vce and the Y axis denotes the
collector current.
• During the off state the current flowing through
the collector and the gate voltage is zero.
• When we change the Vge or the gate voltage
the device goes in to the active region.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

• Stable and continuous voltage across gate provides continuous and stable current flow
through the collector.
• Increase of Vge is proportionally increasing the collector current, Vge3 > Vge2 >
Vge3. BV is the breakdown voltage of the IGBT.
• This curve is almost identical with BJT’s I-V transfer curve, but here Vge is
shown because IGBT is a voltage controlled device.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Characteristics of IGBT

b) Transfer Characteristics
• In the image, the Transfer characteristic of IGBT is shown.
• It is almost identical with PMOSFET.
• The IGBT will go to the “ON” state after Vge is greater than a threshold value
depending on the IGBT specification.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

IGBT as switch:
When IGBTs are used as switches, a small gate voltage controls large current through
its power terminals (collector and emitter terminals).

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Advantages of IGBT
• Good Power handling capabilities
• Low forward conduction voltage drop of 2V to 3V, which is higher than for a BJT but
lower than for a MOSFET of similar rating.
• This voltage will increase with the temperature. This property makes the device easy to
operate in parallel without danger of thermal instability.
• High speed switching capability.
• Low gate current.

Disadvantages of IGBT
• IGBTs have stable charge problems
• IGBTs are costlier than BJTs and MOSFETs
• Excessive power dissipation can take place at the time of turn- OFF

POWER ELECTRONICS MODULE _Y2 ELT & ETT

 Applications of IGBT

In medium power applications like:

• DC and AC motor drives,
• Medium power supplies,
• Solid state relays,
• General purpose inverters,
• UPS,
• Welder equipments,
• Robotics,
• Cutting tools,
• Induction heating.
POWER ELECTRONICS MODULE _Y2 ELT & ETT
 Exercises on transistors

• For the common base circuit shown below, determine IC and VCB . Assume
the transistor to be of silicon.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

POWER ELECTRONICS MODULE _Y2 ELT & ETT
 Exercises on transistors

• For a transistor, β = 45 and voltage drop across 1kΩ which is connected in

the collector circuit is 1 volt. Find the base current for common emitter
connection.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

POWER ELECTRONICS MODULE _Y2 ELT & ETT
 Exercises on transistors

• Determine VCB in the transistor circuit shown below (i). The transistor is of
silicon and has β = 150.

POWER ELECTRONICS MODULE _Y2 ELT & ETT

POWER ELECTRONICS MODULE _Y2 ELT & ETT