Reduced Syllabus Class XII
Reduced Syllabus Class XII
CLASS XII
There willbe twopapers in the subjeçt: Paper II: Practical - 3 hours 15 marks
Paper I: Theory - 3 hours 70 marks
Project Work 10 marks
2. Current Electricity(?)
3 Magnetic Effects of Current and Magnetism(3) 16 Marks
7 Marks
9 Electronic Devices (3)
TOTAL 31 70 Marks
are to be used while teaching and learning, as well as continuous distribution of charge i.e.
for answering questions. linear, surface and volume.
(ii) All physical quantities to be defined as and when (c) Electric lines of force: A convenient way
they are introduced along with their units and
to visualize the electric field; properties
dimensions. of lines of force; examplesof the lines of
(iii) Numerical problems are included from all topics force due to (i) an isolated point charge
exCept where they are specifically excluded or where (tve and - ve); (ii) dipole, (ii) two
onlv qualitative treatment is required. similar charges at a smalldistance:(iv)
uniform field between two oppositely
1. lectrostatics charged parallel plates.
(i) Electric Charges and Fields (d) Electric dipole and dipole moment;
Electric charges; conservation and derivation of the E at a point, () on the
quantisation of charge, Coulomb's law; axis (end on position) (2) on the
superposition principle and continuous perpendicular bisector (equatorial i.e.
charge distribution. broad side on position) of a dipole, also
Electric field: electric field due to a point for r>> 21 (short dipole); dipole in a
uniform electric field; net force zero,
charge, electric field lines, electric dipole, an electric dipole:
torque
electric field due to a dipole, torque on a 7=pxE and its derivation.
dipole in uniform electric field.
Electric flux, Gauss's theoremn in (e) Gauss' theorem: the flux of a vector
Electrostatics and its applications to find field; Q=VA for velocity vector
field due to infinitely long straight wire,
uniformly charged infinite plane sheet and A is area vector. Similarly, for electric
uniformly charged thin spherical shell. field E, electric flux ¢e = EA for E A
(a) Coulomb's law, S.I. unit of
charge; permittivity of free space and o =E-A for uniform E. For non
medium.
and of dielectric
Frictional electricity, electric charges uniform field ¢e - Jdó =/ E.dá. Special
and cases for = 0, 90 and 180. Gauss'
(two types); repulsion statement:
attraction; simple atomic structure theorem,
and ions; conductors ord, =E dA= where ¢[ is for
electrons
and insulators; quantization and a closed surface; q is the net charge
conservation of electric charge;
enclosed,. e, is the permittivity of free
Coulomb's law in vector form; (position
coordinates , rn not necessary). space. Essential properties ofa Gaussian
surface.
Comparison with Newton's law of
gravitation; Supeposition principle Applications: Obtain expressionfor E
due to 1. an infinite line of charge, 2. a
(F, =Fz+Fn+Fut). uniformly charged infinite plane thin
intensity; sheet, 3. athin hollow spherical shell
(b) Concept of electric field and its
examples of different fields; (inside, on the surface and outside).
gravitational, electric and magnetic; Graphical variation of E vs r for a thin
Electric field due to a point charge spherical shell.
E= Flgo (qo is a testcharge): E for a
group
of charges (superposition
principle); a point charge q in an electric
2
(ISC Revised Syllabus 2025)
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(i) Electrostatic Potential, Potential nergy and capacitance for capacitors in series and
Capacitance parallel combinations. Expression for
Electric potential, potential difference, 1
energy stored (U -Cy
electric potential due to a point charge, a 2
dipole and system of charges; cquipotential
surfaces, electrical potential energy of a -)and energy density.
2C L>onyeplain
system of two point charges and of clectric
dipole in an clectrostatic field. (c) Dielectric constant K = C'/C: this is also
Conductors and insulators, free charges and called relative permittivity K = E, = e/E
bound charges inside conductor. elementary ideas of polarization of matter
Dielectrics and electric polarisation, in a uniform electric field qualitative
capacitors and capacitance, combination discussion; induced surface charges
of capacitors in series and in paralle. weaken the original field; results in
Capacitance of a parallel plate capacitor, reduction in E and hence, in pd, (V); for
energy stored in a capacitor (No derivation, charge remaining the same Q= CV = C'
formulae only). V= K. Cr; y = VK; and E' = i if
K
(a) Concept of potential, potential difference the Capacitor is kept connected with the
and potential energy. Equipotential source of emf, Vis kept constant V= 0/C=
surface and its properties. Obtain an QUC' Q'-CV K.
expression for electric potential at a CV= K, Oincreases; For a parallel plate
point due to a point charge; graphical capacitor with a dielectric in between,
variation of E and V vs r, Vp=W/go C' = KC = K.E . Ald = ¬, .Eo .Ald.
hence Va -V = WBAw qo (taking qo from B
to A) =(g/4nE)(ra - 'Ira); derive this Then C' for capacitor
equation; also Va = g/4rEO .1/ra ; for
q>0, V4>0 and for g<0, V, <0. For a ()
collection of charges V= algebraic sum partially filled dielectric, capacitance,
of the potentials due to each charge; C'=EoA/(d-t + tle).
potential due to a dipole on its axial line
and equatorial line; also at any point for 2/ Current Electricity
r>>2l (short dipole). Potential energy of Mechanism of flow of current in conductors.
a point charge (q) in an electric fieldE, Mobility, drift velocity and its relation with
placed at apoint P where potential is , electric current; Ohm's law and its proof,
is given by U =gV and AU =g (Va-Va). resistance and resistivity and their relation to
The electrostatic potential energy f a drift velocity of electrons; V-I characteristics
(linear and non-linear), electrical energy and
system of two charges = work done
W-Wi2 in assembling the system; Ui2 power, electrical resistivity and conductivity.
Temperature dependence of resistance and
or U2 = (1/4nEo ) qiq/r12 For a system
of 3 charges Ui23 = Up t U3 t U:3 resistivity.
Internal resistance of cell, potential
For a difference and emf of acell, combination of
i2 cells in series and in parallel, Kirchhof's laws
dipole in a uniformn electric field, derive and simple applications, Wheatstone bridge,
an expression of the electric potential metre bridge. Potentiometer - principle and its
energy UE = -p.E, special cases for applications to measure potential difference, to
internal
-0. 90 and 180". compare emf of two cells; to measure
resistance of a cell.
(b) Capacitance of a conductor C = Q/V:
obtain the capucitance of a parallel-plate
capacitor (C = Ald) and equivalent
3
i (SC Revised Syllabus 2025)
Electie Cumt
Meoan tree pat veluciy
t Def. Cumet density
Vabi of gim
form
necessary). Metre bridge is a modified
resistivity and resistance of conductors and use to measure
semiconductors and graphs. Resistance R= of Wheatstone bridge, its lip and
unknown resistance. Here R
VI; resistivity p, given by R = plA; Ry=l2p; R/Ry=l/l. Principle of
conductivity and conductance; Ohm's law as in potential 4V a Al,
Potentiometer: fall
j=o. the fall
auxiliary emf e; is balanced against
= V =Kli;
(b) Electrical energy consumed in time in potential VË across length l. e, voltmeter.
1 is E-Pt= VIt; using Ohm 's law llz; potentiometer as a
E/&, =
Potential gradient and sensitivity of
( = Rt. Potential difference
V= P/:P= VI; Electric power consumed
potentiometer. Use of potentiometer: to
compare emfs of two- cells, to
determine
internal resistance of a cell.
P =VI = /R =I R: commercial units;
electricity consumption and billing. Magnetism
3. Magnetic Effects of Current and
emf (such
(c) The source of energy of a seat ofmechanical, i Moving charges and magnetism
as a cell) may be electrical, field, Oersted's
thermal or radiant energy. The emf of a Concept of magnetic Savart law and its
experiment. Biot
source is defined as the work done per unit law and its
application. Ampere's Circuital
charge to force them to go to the higher point long straight wire,
of potential (from -ve terminal to tve applications to infinitely
straight solenoids (only qualitative
terminal inside the cell) so, e = dW ldq; but treatment). Force on a moving charge in
dg = ldt; dW = adg = ldt. Equating total
work done to the work done across the uniform magnetic and electric fields. Force
on a current-carrying conductor in a
uniform
external resistor R plus the work done across
Irdt: magnetic field, force between two parallel
the internal resistance r: aldt=PR dt+ current-carrying conductors-definition of
E=l(R t r); Fa(R +r); also IR +Ir =s
aS ampere, torque experienced by a current loop
or V=& Ir where lr is called the back emf
terminal pd. in uniform magnetic field; moving coi!
it acts against the emf[; Vis the galvanometer - its sensitivity. Conversion of
Derivation of formulae for combination for galvanometer into an ammeter and
identical cells in series, parallel and mixed voltmeter.
grouping. Parallel combination of two cells
of unequal emf. Series combination of n cells (iYMagnetism and Matter
expla ciheT
of unequalemf A current loop as a magnetic dipole, its
(d) Staiement and explanation of Kirchhof'smes
first isa
magnetic dipole moment, magnetic dipole
moment of a revolving electron, magnetic
laws with simple examples. The
conservation law_for charge and the 2nd is field intensity due to a magnetic dipole (bar
law of conservation of energy. Note change magnet) on the axíal line and equatorial line
when (Qualitative only) torque on a magnetic
in potential across aresistor AV=IR<0
we go 'down'with the current (compare with dipole (bar magnet) in a uniform magnetic
flow of water down a river), and AV=IR>0 if field; bar magnet as an equivalent solenoid.
we go up against the current across the Diamagnetic, paramagnetic, and
resistor. When we go through a cell, the -ve
feld
= mx B, where the dipole moment m= external B, very small (nduced)
NIA, unit: A.m. A current carying magnetization in a direction opposite to
my
directions of B in dia, small magnetization parallel to
loop is a magnetic dipole;
hand
current and Band m using right B for para, and large magnetization
rule only: no other rule necessary. parallel to for ferromagnetic
Mention orbital magnetic moment of an materials; this leads to lines of B
atom.
electron in Bohr model of H becoming less dense, more dense and
Concept of radial magnetic field. Moving
coil galvanometer; construction, much more dense in dia, para and ferro,
respectively; hence, aweak repulsion for
principle, working, theory = ko, dia, weak attraction for para and strong
Shunt.
current and voltage sensitivity. attraction for ferro magnetic material.
Conversion of galvanometer into
Also, a small bar suspended in the
ammeter and voltmeter of given range. horizontal plane becomes perpendicular
to B
to the B field for dia and parallel
4. Electromagnetic Induction and Alternating (c) Sinusoidal variation ofV and I with time,
Currents for the output from an ac
inductance, = LI and L=
diagram method to obtain expression for
e h a
k i )
6
(ISC Revised Syllabus 2025)
in phase in a resistor, I is the same in all
three; hence draw phase Concept of displacement current, qualitative
combine VL and Vc (in oppositediagram,
phase;
descriptions only of electromagnetic spectrum;
Common features of all regions of
phasors add like vectors) to
electromagnetic spectrum including transverse
give V=VR+V+Vc(phasor addition) and nature (E and B perpendicular to c): special
the max. values are
related by features of the common classification (gamma
V=VRm t(VLm-Vcm) when VL>Ve
rays, X rays, UV rays, visible light, IR,
Substituting pd-current microwaves, radio and TV waves) in their
resistance reactance, We get production (source), detection and other
Z'tan-R+(XL-XJ'
= (VL m
and
properties; uses; approximate range of or for
-Vom)/VRm = (Xi-X)/R at least proper order of increasing for 2.
giving I =Im sin (wt-) where I m=VZ
etc. Special cases for RL and RC circuits.
[May use Kircho's law and obtain the 6. Optics
differential equation] Graph of Zvs fand (i) Ray Optics and Optical Instruments
Ivs f Ray Optics: Reflection of light by
() Power P associated with LCR circuit = spherical mirrors, mirror formula,
2Volo cos -Vmslrms cOS¢ = Im R; refraction of light at plane surfaces, total
power absorbed and power dissipated; internal reflection and its applications,
electrical resonance; bandwidth of optical fibres, refraction at spherical
signals and factor (no derivation); den surfaces, lenses, thin lens formula, lens
Oscillations in an LC circuit ( maker's formula, magnification, power of
a lens, combination of thin lenses in
1/NLC ). Average power consumed contact, combination of a lens and a miror,
averaged over a full cycle P= refraction and dispersion of light through a
(1/2) Vlo cos. Power factor prism.
cos¢ = R/Z. Special case for pre R, L Optical instruments: Microscopes and
and C; choke coil (analytical only), XL astronomical telescopes (reflecting and
controls current but cos = 0, hence CartesiA
refracting) and their magnifying powers.
P=0, wattless current; LC circuit; at Coodi (a) Reflection of light by spherical mirrors.
resonance with X=X,Z=Zmin R,power
delivered to circuit by the source is Mirror formula: its derivation: R=2f for
maximum, resonant frequency spherical mirrors. Magnification nedoi vt
1 b) Refraction of light at a plane interface,
Snell's law; total internal reflection and yec
27VLC criticalangle; total reflecting prisms and
(g) Simple a.c. generators: Principle, optical fibers. Total reflecting prisms:
description, theory, working and use. application to triangular prisms with
Variation in current and voltage with angle of the prism 30°, 45, 60 and 90
time for a.c. and d.c. Basic differences respectively; ray diagrams for Refraction
between a.c. and d.c. through a combination of
media, n, X,n, x n, =1, real depth
5. Electromagnetic Waves and apparent depth. Simple applications.
Basic idea of displacement current. (c) Refraction through a prism, minimum
Electromagnetic waves, their characteristics, their deviation and derivation of
transverse nature (qualitative ideas only). relation between n, A and min. Include
Complete electromagnetic spectrum starting from explanation of i-8 graph, i, = i; =i(say)
radio waves to gamma rays: elementary facts of for m; from symmetry r1 = rz; refracted
electromagnetic waves and their uses. ray inside the prism is parallel to the
Dioplacemet coameut Conlelha base of the equilateral prism. Thinprism.
7
qrah betwehagyle of
(SC Revised Syllabus 2025)
. mde d
Wavee} Peyulor pn'ss
sin Si
second
Bohr's model of H atom, postulates (2=); . reactor and nuclear bomb. Main parts of
a nuclear reactor including their
expressions for orbital velocity, kinetic functions - fuel elements, moderalor,
en t ntlev tusm
(ISC Revised Syllabus 2025) 9
control rods, coolant, casing; criticality; intrinsic and extrinsic, doping, p-type, n
utilization of energy output all type; donor and acceptor impurities.
qualitative only. Fusion, simple example (b) Junction diode and its symbol;
of 4 'H’He and its nuclear
reaction depletion region and potential barrier;:
equation; requires very high temperature forward and reverse
10° degrees: difficult to achieve: biasing.
hydrogen bomb; thermomuclear energy characteristics and numericals; half wave
production in the sun and stars. Details and afull wave rectifier. Simple circuit
of chain reaction not required]. diagrams and graphs, function of each
component in the electric circuits, qualitative
9. Electronic Devices
only. [Bridge rectifier of 4 diodes not
(i) Semiconductor Electronics: Materials, included]; elementary ideas on solar cell,
Devices and Simple Circuits. Energy bands in photodiode and light emitting diode (LED) as
conductors, semiconductors and insulators semi conducting diodes. Importance of
LED's as they save energy without causing
(qualitative ideas only). Intrinsic and
extrinsic semiconductors. P and n type, p-n atmospheric pollution and global warming.
junction. (Zener diode, V- characteristics, circuit
(ii) Semiconductor diode: LV characteristics in diagram and working of Zener diode as a
forward and reverse bias, diode as a rectifier; voltage regulator.)
PAPERII
Special types of junction diodes: LED,
y y t e
photodiode and solar cell and Zener diode PRACTICAL WORK- 15 Marks
s h u e t e
10
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(ISC Revised Syllabus 2025)