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Assignment 3 Microelectronics Devices To Circuits

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17 views4 pages

Assignment 3 Microelectronics Devices To Circuits

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23btrei003
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Week 3: Assignment 3

Q1: Figure below shows the VTC of a BJT inverter. Identify the operating regions of the BJT in
section A, B and C.

Figure 1

a. A = Cutoff; B = Forward Active; C = Saturation


b. A = Forward Active; B = Saturation; C = Cutoff
c. A = Saturation; B = Cutoff; C = Forward Active
d. A = Cutoff; B = Reverse Active; C = Saturation
Ans: (a) A = Cutoff; B = Forward Active; C = Saturation
Q3: Considering base width modulation in a BJT, the decrease in base width cause β to ____ hence
the collector current (IC) ____ with collector voltage.
a. Increase; Increase
b. Increase; Decrease
c. Decrease; Increase
d. Decrease; Decrease
Ans: (a) Increase; Increase
Q4: If the base width in a bipolar junction transistor is doubled, which one of the following statements
will be TRUE?
a. Current gain will increase
b. Unity gain frequency will increase
c. Emitter – base junction capacitance will increase
d. Early voltage will increase
Ans: (d) Early voltage will increase
Q5: The approximate temperature dependence of mobility due to lattice scattering is _______.
1
a. 𝑇 2
1
b. 𝑇 −2
3
c. 𝑇 2
3
d. 𝑇 −2
3
Ans: (d) 𝑇 −2
Q6: In an n-channel enhancement MOSFET, onset of inversion takes place at
a. VGS = VTH
b. VGS > VTH
c. VGS < VTH
d. Doesn’t depend on VTH.
Ans: (a) VGS = VTH
Q7: The conventional limit for sub-threshold slope for MOSFET at 300 K is _____.
a. 40 mV/decade
b. 60 mV/decade
c. 80 mV/decade
d. 100 mV/decade
Ans: (b) 60 mV/decade
Q8: Consider a N-MOSFET as shown in figure below. What will be the change in ID if VDD changes
𝑊
from 3.3 to 1.8V. Consider VTH = 0.5V and 𝜇𝑁 𝐶𝑂𝑋 = 100 µ𝐴/𝑉 2
𝐿

a. 4 µA
b. 3 µA
c. 2 µA
d. 1 µA
Ans: (c) 2 µA
Q9: A MOSFET operating in linear region behaves as a _______ while in saturation region it behaves
as a ________.
a. Current source ; capacitor
b. Resistor; current source
c. Resistor , inductor
d. capacitor; current source
Ans: (b) resistor; current source
Q 10: In order to have zero substrate bias effect, The substrate of an p-channel enhancement mode
MOSFET should be _____.
a. Connected to the most positive bias.
b. Connected to the most negative bias.
c. Grounded
d. Floating
Ans: (a) Connected to the most positive bias.
Week 3: Assignment 3: Brief Explanation
Q1. Explanation:
As VIN < VBE(ON) device is in cut-off & IC=0, hence VOUT = VCC. As VIN increases from a low value to
a high value, the device switches on drastically. It moves to active region and the into saturation.
Q3. Explanation:
Considering base width modulation in a BJT, the decrease in base width cause β to increase hence the
collector current (IC) increase with collector voltage.
Q4. Explanation:
As the base width is increased the base current will increase thus reducing the collector current. The
collector-emitter characteristics will be more flat thus the extrapolation of collector currents will be
farther i.e. Early voltage will increase.
Q5. Explanation:
3
The approximate temperature dependence of mobility due to lattice scattering is 𝑇 −2 .
Q6. Explanation:
In an n-channel enhancement MOSFET, onset of inversion takes place at VGS = VTH.
Q7. Explanation:
The conventional limit for sub-threshold slope for MOSFET is 60 mV/decade
Q8. Explanation:
Here VGS = 2.5 V
Overdrive voltage = VGS – VTH = 2.5 − 0.5 = 2V
Case 1: VDS = 3.3 V
VDS > VGS − VTH; Device is in saturation
1 𝑊 1
𝐼𝐷 = µ𝑁 𝐶𝑂𝑋 (𝑉𝐺𝑆 − 𝑉𝑇𝐻 )2 = × 100 × 10−6 × (2.5 − 0.5)2 = 200 µ𝐴
2 𝐿 2
Case 2: VDS = 1.8 V
VDS < VGS − VTH; Device is in linear region.
𝑊 1 2 1
𝐼𝐷 = µ𝑁 𝐶𝑂𝑋 ((𝑉𝐺𝑆 − 𝑉𝑇𝐻 )𝑉𝐷𝑆 − 𝑉𝐷𝑆 ) = 100 × 10−6 × ((2.5 − 0.5) × 1.8 − × 1.82 ) =
𝐿 2 2
= 198 µ𝐴
Change in current = 200 − 198 = 2µA
Q9. Explanation:
In linear region, a MOSFET works as a resistor, while in saturation region it works as a current
source.
Q10. Explanation:
The substrate of an p-channel enhancement mode MOSFET should be connected to the most positive
bias to reduce body effect and leakage.

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