CS50N20 A8R, the silicon N-channel Enhanced ID 50 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(T C=25℃) 250 W
which reduce the conduction loss, improve switching RDS(ON)Typ 42 mΩ
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤51mΩ) l Low Gate Charge (Typical Data: 49.4nC)
l Low Reverse transfer capacitances(Typical:34pF)
l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating Units VDSS Drain-to-Source Voltage 200 V Continuous Drain Current 50 A ID Continuous Drain Current T C = 100 °C 38.5 A a1 IDM Pulsed Drain Current 200 A VGS Gate-to-Source Voltage ±30 V a2 EAS Single Pulse Avalanche Energy 1700 mJ a3 dv/dt Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 250 W PD Derating Factor above 25°C 2.0 W/℃ TJ，T stg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃ TL Maximum Temperature for Soldering 300 ℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 1 of 1 0 2 0 1 6 V0 1 CS50N20 A8R ○ R
OFF Characteristics Rating Unit Symbol Parameter Test Conditions Min. Typ. Max. s VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA 200 -- -- V
ΔBVDSS/ΔT J Bvdss Temperature Coefficient ID=250uA,Reference25℃ -- 0.3 -- V/℃
VDS =200V, V GS= 0V, Ta = 25℃ -- -- 1 µA IDSS Drain to Source Leakage Current VDS =160V, V GS= 0V, Ta = 125℃ -- -- 100 µA
IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA
IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA
ON Characteristics Rating Symbol Parameter Test Conditions Units Min. Typ. Max. R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =20A -- 42 51 mΩ VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA 2.0 -- 4.0 V Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics Rating Symbol Parameter Test Conditions Units Min. Typ. Max. g fs Forward Transconductance VDS=15V, I D =20A -- 65 -- S C iss Input Capacitance -- 2819 -- VGS = 0V V DS = 25V C oss Output Capacitance f = 1.0MHz -- 394 -- pF C rss Reverse Transfer Capacitance -- 34 --
Resistive Switching Characteristics
Rating Symbol Parameter Test Conditions Units Min. Typ. Max. td(ON) Turn-on Delay Time -- 35.7 -- tr Rise Time ID =20A V DD = 100V -- 38.9 -- RG =10Ω ns td(OFF) Turn-Off Delay Time -- 74.7 -- tf Fall Time -- 21.9 -- Qg Total Gate Charge -- 49.4 -- ID =20A V DD =160V Qgs Gate to Source Charge VGS = 10V -- 13 -- nC Qgd Gate to Drain (“Miller”)Charge -- 18 --
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 2 of 1 0 2 0 1 6 V0 1 CS50N20 A8R ○ R
Source-Drain Diode Characteristics
Rating Symbol Parameter Test Conditions Units Min. Typ. Max. IS Continuous Source Current (Body Diode) -- -- 50 A ISM Maximum Pulsed Current (Body Diode) -- -- 200 A VSD Diode Forward Voltage IS =40A,V GS=0V -- -- 1.5 V trr Reverse Recovery Time -- 261.3 ns IS =20A,Tj = 25℃ Qrr Reverse Recovery Charge dIF /dt=100A/us, -- 2770 nC VGS=0V IRRM Reverse Recovery Current -- 21.2 A Pulse width tp≤300µs,δ≤2%
Symbol Parameter Max. Units
R θ JC Junction-to-Case 0.5 ℃/W R θ JA Junction-to-Ambient 62.5 ℃/W
a1 ：Repetitive rating; pulse width limited by maximum junction temperature a2 ：L=10mH, I D=18.5A, Start T J=25℃ a3 ：ISD =20A,di/dt ≤100A/us,V DD≤BV DS, Start TJ=25℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 3 of 1 0 2 0 1 6 V0 1 CS50N20 A8R ○ R
Characteristics Curve：
Figure 1 Maximum Forward Bias Safe Operating Area Figure 2 Maximum Power dissipation vs Case Temperature
Figure 3 Maximum Continuous Drain Current vs Case Temperature Figure 4 Typical Output Characteristics
Figure 5 Maximum Effective Thermal Impedance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 4 of 1 0 2 0 1 6 V0 1 CS50N20 A8R ○ R
Figure 6 Typical Transfer Characteristics Figure 7 Typical Body Diode Transfer Characteristics
Figure 8 Typical Drain to Source ON Resistance Figure 9 Typical Drian to Source on Resistance vs Drain Current vs Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 5 of 1 0 2 0 1 6 V0 1 CS50N20 A8R ○ R
Figure 10 Typical Theshold Voltage vs Junction Temperature Figure 11 Typical Breakdown Voltage vs Junction Temperature
Figure 12 Typical Capacitance vs Drain to Source Voltage Figure 13 Typical Gate Charge vs Gate to Source Voltage
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 6 of 1 0 2 0 1 6 V0 1 CS50N20 A8R ○ R
Test Circuit and Waveform
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 7 of 1 0 2 0 1 6 V0 1 CS50N20 A8R ○ R
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 8 of 1 0 2 0 1 6 V0 1 CS50N20 A8R ○ R
Package Information
Values(mm) Items MIN MAX A 9.60 10.6
B 15.0 16.0
B1 8.90 9.50 C 4.30 4.80 C1 2.30 3.10 D 1.20 1.40 E 0.70 0.90 F 0.30 0.60 G 1.17 1.37 H 2.70 3.80 L* 12.6 14.8 N 2.34 2.74 Q 2.40 3.00 3.50 3.90 *adjustable
TO-220AB Package
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 9 of 1 0 2 0 1 6 V0 1 CS50N20 A8R ○ R
The name and content of poisonous and harmful material in products
Hazardous Substance Part’s Name Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP
Lead Frame ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Molding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Wire Bonding ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ Solder × ○ ○ ○ ○ ○ ○ ○ ○ ○ ○：Means the hazardous material is under the criterion of 2011/65/EU. ×：Means the hazardous material exceeds the criterion of 2011/65/EU. Note The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s RoHS.
Warnings 1. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. 2. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. This publication is made by Huajing Microelectronics and subject to regular change without notice.
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
