FUNDAMENTALS OF ELECTRONICS ENGG.

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ü UNIT 2ND ONE SHOT LECTURE
Transistors:
BJT,JFET,MOSFET
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 TRANSISTOR
A transistor is a three-terminal semiconductor device that amplifies the electronic
signals such as radio and television signals. Before the transistors came into
existence, vacuum tubes are used to amplify the electronic signals. But nowadays
vacuum tubes are replaced by transistors because of its various advantages over
vacuum tubes.
“A transistor is a three-terminal semiconductor device that amplifies
or switches the flow of current.”

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The transistor that is made up of one p-type and two n-type semiconductor layers is
known as n-p-n transistor whereas the transistor that is made up of one n-type and two
p-type semiconductor layers is known as p-n-p transistor.

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Advantages of transistors
Ø Low power consumption
Ø Low cost
Ø Small size
Ø Higher efficiency
Ø Low voltage is needed to operate the transistors
Ø High physical ruggedness than vacuum tubes
Ø Produce far less heat than vacuum tubes
Ø Transistors are lighter than vacuum tubes

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 Bipolar Junction transistors
A bipolar junction transistor or BJT is a three terminal electronic device that amplifies the
flow of current. It is a current controlled device. In bipolar junction transistor, electric current
is conducted by both free electrons and holes.

The bipolar junction transistors are formed by sandwiching either n-type or p-type
semiconductor layer between pairs of opposite polarity semiconductor layers.
Bipolar junction transistors are classified into two types based on their construction: They are

Ø NPN transistor

Ø PNP transistor

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Ø NPN transistor
When a single p-type semiconductor layer is sandwiched between two n-type
semiconductor layers, the transistor is said to be an npn transistor.

Ø PNP transistor
When a single n-type semiconductor layer is sandwiched between two p-type semicon.
layers, the transistor is said to be a pnp transistor.
Both PNP and NPN transistors consist of three terminals: they are emitter, base, and
collector.

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Ø Emitter: As the name suggests, the emitter section supplies the charge carriers. The
emitter section is heavily doped so that it can inject a large number of charge carriers into
the base. The size of the emitter is always greater than the base.

Ø Base: The middle layer is called base. The base of the transistor is very thin as
compared to emitter and collector. It is very lightly doped.

Ø Collector: The function of the collector is to collect charge carriers. It is moderately

doped. That is the doping level of the collector section is in between emitter and base. The
size of the collector is always greater than emitter and base. The collector area in the
transistor is considerably larger than the emitter area. This is because the collector region
has to handle more power than the emitter does and more surface area is required for heat
dissipation.
 ü BJT Operation Modes
Basically transistor can be operated in three modes:

Ø Cut-off mode (Both junctions are in R.B)

Ø Saturation mode( Both junctions are in F.B)

Ø Active mode (EB junction in F.B while BC junction in R.B)

Note: In order to operate transistor in one of these regions, we have to supply dc

voltage to the transistor. Based on the polarity of the applied dc voltage, the transistor
operates in any one of these regions. And applying dc voltage to the transistor is
nothing but the biasing of transistor.

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 Cut-off mode

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 Saturation mode

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 Active mode

Note: Finally we can say that the transistor works as an ON/OFF (closed/open
switch) switch in saturation and cutoff modes whereas it works as an amplifier of
current in active mode.
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 Working of a npn transistor
ØUnbiased npn transistor

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ØBiased npn transistor
When external voltage is applied to an npn transistor, it is said to be a biased npn transistor.
Depending on the polarity of the applied voltage, the npn transistor can be operated in three
modes: active mode, cutoff mode and saturation mode.

The npn transistor is often operated in active mode because in active mode the npn transistor
amplifies the electric current.

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vEmitter-base-Collector current:

The free electrons that are flowing from emitter to base due to forward bias will combine with
the holes in the base. However, the base is very thin and lightly doped. So only, a small
percentage of emitter free electrons combines with the holes in the base region. The remaining
large number of free electrons will cross the base region and reaches to the collector region.
This is due to the positive supply voltage applied at collector. Hence, free electrons flow from
emitter to collector. At collector, both the emitter free electrons and collector free electrons
produces current by flowing towards the positive terminal of the battery. Therefore, an amplified
current is produced at the output.
Note: In npn transistor, the electric current is majorly conducted by electrons.

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 ü PNP Transistor
When a single n-type semiconductor layer is sandwiched between two p-type
semiconductor layers, a pnp transistor is formed.

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 Working of a pnp transistor
ØUnbiased pnp transistor

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ØBiased pnp transistor

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vEmitter-base-Collector current:
The holes that are flowing from emitter to base due to forward bias will combines with the free
electrons in the base. However, the base is very thin and lightly doped. So only, a small
percentage of emitter holes will combine with the free electrons in the base region. The
remaining large number of holes will cross the base region and reaches to the collector region.
This is due to the negative supply voltage applied at collector. Hence, the holes flow from emitter
to collector. At collector, both the emitter holes and collector holes produces current by flowing
towards the negative terminal of the battery. Therefore, an amplified current is produced at the
output.

Note: In pnp transistor, the electric current is majorly conducted by holes.

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 Transistor configuration

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Depending upon the terminal which is used as a
common terminal to the input and output terminals,
the transistor can be connected in the following
three configurations. They are:

qCommon base (CB) configuration

qCommon emitter (CE) configuration

qCommon collector (CC) configuration

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 CB configuration

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qDynamic input resistance (r ): Dynamic input resistance is defined as the ratio of change
i

in input voltage or emitter voltage (VBE) to the corresponding change in input current or emitter
current (IE), with the output voltage or collector voltage (VCB) kept at constant.

Note: The input resistance of common base amplifier is very low.

qDynamic output resistance (ro):Dynamic output resistance is defined as the ratio of

change in output voltage or collector voltage (VCB) to the corresponding change in output
current or collector current (IC), with the input current or emitter current (IE) kept at constant.

Note: The output resistance of common base amplifier is very high.

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q DC Current gain (α): The current gain of a transistor in CB configuration is defined
as the ratio of output current or collector current (IC) to the input current or emitter current
(IE).
Note: The current gain of a transistor in CB
configuration is less than unity. The typical current
gain of a common base amplifier is 0.98.

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 CE configuration

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q Dynamic input resistance (ri): Dynamic input resistance is defined as the ratio of change
in input voltage or base voltage (VBE) to the corresponding change in input current or base
current (IB), with the output voltage or collector voltage (VCE) kept at constant.

Note: The input resistance of common emitter amplifier is very low.

qDynamic output resistance (ro): Dynamic output resistance is defined as the ratio of
change in output voltage or collector voltage (VCE) to the corresponding change in output
current or collector current (IC), with the input current or base current (IB) kept at constant.

Note: The output resistance of common emitter amplifier is high.

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q DC Current gain (α) : The current gain of a transistor in CE configuration is defined
as the ratio of output current or collector current (IC) to the input current or base current (IB).
It is denoted by β.

Note: The current gain of a transistor in CE configuration is high. Therefore,

the transistor in CE configuration is used for amplifying the current.

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 CC configuration

Note: The common collector

amplifier has high input impedance
and low output impedance. It has low
voltage gain and high current gain.
The power gain of the common
collector amplifier is medium.

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qDynamic input resistance (r ): Dynamic input resistance is defined as the ratio of
i

change in input voltage or base voltage (VBC) to the corresponding change in input current or
base current (IB), with the output voltage or emitter voltage (VEC) kept at constant.

Note: The input resistance of common collector amplifier is high.

qDynamic output resistance (ro): Dynamic output resistance is defined as the ratio of
change in output voltage or emitter voltage (V EC) to the corresponding change in output
current or emitter current (IE), with the input current or base current (IB) kept at constant.

Note: The output resistance of common collector amplifier is very low.

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Current amplification factor (γ):
The current amplification factor is defined as the ratio of change in output current or emitter
current IE to the change in input current or base current IB. It is expressed by γ.

Note : The current gain of a common collector amplifier is high.

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 Relation between α, β
IE = IB + IC

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 About JFET
Ø Type of Field Effect Transistor (FET): JFET is one of the two main types of field-
effect transistors, the other being Metal-Oxide-Semiconductor FET (MOSFET).
Ø Basic Operation: JFET operates based on the control of the current flow by an
electric field. It has three terminals - source (S), drain (D), and gate (G).
Ø Channels: JFETs have either an N-channel or P-channel configuration. In an N-
channel JFET, electrons are the majority carriers, while in a P-channel JFET, holes
are the majority carriers.
Ø Voltage-Controlled Device: JFET is voltage-controlled, meaning the current flowing
between the source and drain terminals is controlled by the voltage applied to the
gate terminal.

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Ø Modes of Operation: JFETs operate in three modes - cutoff, saturation, and pinch-off.
In cutoff, the JFET is non-conducting; in saturation, it's fully conducting; and in pinch-
off, there is a controlled flow of current.
Ø Symbol and Polarity: The symbol for a JFET indicates the direction of current flow.
For an N-channel JFET, the arrow points in the direction of conventional current flow
(opposite to electron flow).
Ø High Input Impedance: JFETs typically have high input impedance, making them
suitable for applications where a high-impedance input is required, such as in amplifier
circuits.
Ø Low Noise: JFETs are known for their low noise characteristics, making them useful in
applications where signal fidelity is crucial, such as in audio amplifiers.

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Ø No Gate Capacitance: Unlike MOSFETs, JFETs do not have a gate capacitance,
simplifying their use in certain circuit designs.
Ø Temperature Sensitivity: JFETs are sensitive to temperature variations, which can
affect their performance. Proper thermal management is important in JFET-based
circuits.
Ø Applications: JFETs find applications in various electronic circuits, including
amplifiers, oscillators, voltage regulators, and high-impedance preamplifiers.
Ø Biasing: Proper biasing is crucial for the stable operation of JFETs. Biasing circuits
are employed to set the JFET in the desired operating point.
Ø Manufacturing Materials: JFETs are commonly fabricated using semiconductor
materials like silicon and gallium arsenide.

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Construction of n-channel JFET:

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 BJT vs JFET

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 What is MOSFET?
The term MOSFET is used to refer to the Metal-Oxide-Semiconductor Field-Effect Transistor. It is a
particular type of field-effect transistor that is frequently used in electronic circuits due to how rapidly
and effectively it can switch and amplify electrical signals.
MOSFET's terminals are gate, substrate (or body), drain, and source. The gate is a metal electrode set off
from the semiconductor material by an insulating layer of silicon dioxide, whereas the source and drain
are doped regions in the semiconductor material.
MOSFETs function similarly to a typical FET. When a voltage is applied to the gate terminal, the
semiconductor channel between the source and drain terminals' conductivity changes, creating an electric
field. The MOSFET can function as a switch or an amplifier, depending on the gate bias voltage that is
applied.
MOSFETs have various advantages over other types of transistors, such as high input impedance, low power
consumption, and fast switching. MOSFETs can also be made in smaller sizes than other types of transistors, which
makes them suitable for use in high-density integrated circuits.
 Difference between FET and MOSFET Symbol

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 Output (Drain) Characteristics of E-MOSFET

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 Depletion-mode MOSFET
In Depletion-mode MOSFET channel is pre-
built in MOSFET. In this type of MOSFET, we
applies a gate-source voltage ( Vgs ) to turn
O F F t h e M O S F E T. T h e d e p l e t i o n m o d e
MOSFET is nearly equal to “normally closed”
switch. This MOSFET is always in ON
condition when we applies voltages difference
between drain and source current will start
flowing through the MOSFET.

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