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3 4 Assignment

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5 views1 page

3 4 Assignment

Uploaded by

palakarora10107
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Assignment 2 (BEE Unit 3, 4)

1. Explain in 80-100 words with relevant equations/ schematics.


(a) Breakdown in p-n diodes (b) Clipping circuits (c) voltage multipliers.
2. Design a voltage divider bias circuit for transistor to establish the quiescent point VCE=12v, Ic
=1.5mA, Stability factor S < 3, 𝖰 = 𝟓𝟎, 𝑽𝑩𝑬 = 𝟎. 𝟕𝑽, 𝑽𝑪𝑪 = 𝟐𝟐. 𝟓 𝑽 𝒂𝒏𝒅 𝑹𝒄 = 𝟓. 𝟔 𝑲Ω.
3. Explain the two-transistor equivalent circuit of SCR.
4. A transistor has a typical 𝖰 = 100. If the collector current is 40 mA. What is the value of emitter
current?
5. Compare CE, CB, CC Amplifiers on the basis of gain and frequency response.
6. Derive the expressions for current gain, voltage gain, input impedance and output impedance
for an Emitter Follower (common collector) circuit.
7. The MOSFET shown fig has the following parameter VT = 2V, 𝖰 = 𝟎. 𝟓 × 𝟏𝟎−𝟑, rd = 75KΩ. It is
biased at ID = 1.9m A.

a) Verify that the MOSFET is biased in its active region.


b) Find the input resistance.
c) Draw the small single equivalent circuit and find the voltage gain VL/VS.

8. Define the various h-parameters for a model for CE, CC and CB configuration transistor.
9. Explain the frequency response of an amplifier with suitable characteristics.
10. Derive the expression for current gain, input impedance and voltage gain of a CE transistor
Amplifier.

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