Scribd
Upload
75 views1 page

Homework KH2024

Uploaded by

hahnan278
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
75 views1 page

Homework KH2024

Uploaded by

hahnan278
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 1

HOMEWORK

Deadline: 30/11/2024 – Email: [email protected]

1. The doping concentrations in a uniformly doped silicon p-n junction are NA = 4×1016
cm-3 and ND = 2×1015 cm-3. The measured built-in potential barrier is Vbi = 0.550 V.
Determine the temperature at which this result occurs.
2. Calculate the applied reverse-bias voltage at which the ideal reverse current in a p-n
junction diode at T = 300 K reaches 80% of its reverse saturation current value.
3. A silicon p-n junction at T = 300 K has doping concentrations of NA = 5×1015 cm-3 and
ND = 5×1016 cm-3. A reverse-biased voltage of VR = 5 V is applied. Determine the
junction capacitance of this p-n junction.
4. Consider a silicon n+-p junction diode. The critical electric field for breakdown in silicon
is approximately Ecrit = 4×105 V/cm. Determine the maximum p-type doping
concentration such that the breakdown voltage is (a) 40 V and (b) 20 V.
5. An abrupt silicon p-n junction at T = 300 K has impurity doping concentrations of
NA = 5×1016 cm-3 and ND = 1015 cm-3. Calculate built-in potential barrier (Vbi), depletion
width (W) and maximum electric field (Emax) at VR = 0 and VR = 5 V.
6. A silicon sample at T = 300 K contains an acceptor impurity concentration of NA=1016
cm-3. Determine the concentration of donor impurity atoms that must be added so that
the silicon is n-type and the Fermi energy is 0.20 eV below the conduction band edge.
7. An ideal silicon p-n junction has ND = 1018 cm-3, NA = 1016 cm-3, p = n = 10-6 s, and a
device area of 1.2×l0-5 cm2 (a) Calculate the theoretical saturation current at 300 K. (b)
Calculate the forward and reverse currents at ±0.7 V.
8. If αn = αp = 104(E/4 x 105)6 cm-1 in GaAs, where E is in V/cm, find the break-down
voltage of (a) a p-i-n diode with an intrinsic-layer width of 10 μm and (b) p+-n junction
with a doping of 2×1016 cm-3 for the lightly doped side.
9. An intrinsic Si sample is doped with donors from one side such that ND = N0exp(-ax).
(a) Find an expression for the built-in field E(x) at equilibrium over the range for which
ND >> ni. (b) Evaluate E(x) when a = 1 μm-l.
10. Consider a uniformly doped silicon p-n junction with doping concentrations NA=
21017 cm-3 and ND = 4x1016 cm-3. (a) Determine Vbi at T 300 K. (b) Determine the
temperature at which Vbi increases by 2 percent. (Trial and error may have to be used.)

You might also like