Module -1

Semiconductor Diodes and Applications

Introdue tion: A semtconductor diode in its impure foong
is KnDOn as extrineic sems conductos. The density
elecrow -hole paive in an exttnsie semionductor is gane
-Tatad bg.heat, doping tavel and some other soures
energt
The process ot adding ipustties to intinsie
(pure) emtconductor is knoun as The added
tnpuattes aoe called as dopats. The eoped semicondu
-ctor is caled as extaínsie 'semiConducto
There aue two types of extinsie seiconcuctoss,
<-type semzconductor ; (i P- type semiconchetoo,
< ntye
semiconcucter : is pneduced by doping the
intoinsic Sunicowductos asith petavalent im puattres.
Anttmong, Arsentc arc Phosphordus. These pentavalert
impusibies u also kndon as denor impusities and the
eSulted ions ane dono jons, In n-tpe semiconductos,
the elecvons ale m
holes aue
majeity chage
minovity hage caues.
CasieS and he

ki7 PteSamiconducto: is pooduced by dang irtamste

femiconductor orth tatvalent twpuities. Aluminiu),
Boron and Galliu. These tt valent impusities ate also
KnowW as acceptor impusz ties and the esulted ions
ae known aus' acceptor ions. In p-type sericonduetos
holes ae the majsrty chage casers and electsons
QAe the minoty chae CateN
PN Turction Diode ( Semiconductor diode: lectrode,os
The tos) diode fens to a two0 -e
two- torminal,device. # diod is a deyice,
offesing a low sesis tance when forcoan d- blased, and
behavng almoct as Cw open-sotch when aevease
biased.
The diode has a wide rage applications
Arke vectfrcation, voltage eguation ,, ptozction agabst
wigh voltage and eware shapYng.. sther more, there aue
and
special puspo&e dzodas , e-g zenes diodas, LEDS
several othess
As Shon in gigue 1.1, 6 we join a piece 5
a p-type semiconductor cuit a piece %rtype Semjvesu
-Cowcuctor, a p-njnctioh is forr med and thediooe
-lting semiconducto device is a semiconductor
F-n.funetion diode.
The circuit symbol for a diode is an auuowbead
and bas, The aueowhead indcates the conventional
durection o cusent ohen the drode is forwaud-biased.

A K Anode(t) Cathode (-)

A K

Figue 1., 4 2 Intmal structue 1.2% Diode circit

Of a diode Figure
-’ele ctaons
Sgmsbel.
+ ’ boles
’ Aceptox oT negative jons
Donr OT positive ions.
Diode Parameters : The diode parameters o geatest
interest aue
ay Forward vo ltage Drop (E).
5 Reverse Satus ation current (I or I)
’ Revexse Breakdown Voltage (VeR).
d) static For ward Resistance (RF).
e Dynamic Resi stonce ().
MaximUm Forward Cuesent 9
Tronao.
gtatic Forwasd ges istance (RE): Tt is the esistonce
offered by a diode eches it is for waod -biased at a
paoticlas constant forwasd euuent.

Dynamic Resrstance (ra): The vesistane Offered by a

drode to changing levels of foruard volitage.

AVe
 Ide ad Diode &An ideal diode Cor pefect ciode) is the
one which has zero forwasd gestahce and zeOforwasd
voltage doop whey forwaod-biased. Tt would als
have aw high eyeose resistance and ero
everse Cy ent, ohen eYeYse-biased.
Ih othe words, a, ideal diode acte as a
&uoitch. The Suoitch is el osed coheh faward-binsed
and open when e verse-biased.
+
closed-swrteh

CFor ward-biased)

Open-switch
(Reverse- biased)

Drode Equivalent Crcut:

Equivalent uscut Cmodel) is a combination o
ditferent ciscuit elernents like voltaqe soures,curient
seuTces , vesistors, etc, that best. approx tmatz s the
actual terminal ehaactastsies ok a device g systeny.
The equivalent cirutt (model) for a diodo
cn be obtained bg approximating the i chaa
|-ctesistics by straight -ne 3egments. Basically thee
ane three euzvalent civats appoximatios. They
(1) Piecewise Linea charactartstic
(). Appox+matjon model
(ti) Tdeal model.
<i7 Precewise Linear charactristic ; Tn this model,both
VE and 4 ase consideed. The v-I ehara ctiristics
model ae showm in fiqure belocu.
 Ideal
Ve diode

Lpiecewise lkneat mod

1
>V(v)

(i) APpOximation model Tn this model, only Ye is consi

dered and is ignored. The v2 characaristics and
model ae shewn in figue beloo.

Ideal
di ode

’
Cappooxinmation model
’VCv)

<i Ideal modol : In this model, bott, E and A ale

ignored. The viI chasactai sfics and model ave shown
in tgure below,
T(mA)
Ideal
diode

[ Tdeal model]
>Vev)
 Exaople 4,: Calculate Ip for the diode circult in f4.
Aoelo us a.ssuming that the do de has Ve0.V and
=0. Then tecalculae the curent taking
Solation &
=0.4N

102
+ R
0.7V
D,
tdea
diode

Applyng kv, e get

E-Ve &o mA
R4 10
I =8Om A

b V = 0.Y , O.25Sn.

R, lo

O.,2SN
VE
Lded)
diode
APpying kve, weget
= J.5-0.7 78m A
(R+4) (10+ 0,2s)
DC Load Line Analysis : Tt is a tachnique used to
the operating point of aa diode în a ctrcuit.
avalyte cuve
It iñvolves ploting the diode's characeaistics
graph, The interse
and the load ne on the same
-ction of the characteistic cuTVe &nd the.load line
detosmines the diode' s operating pointcg -pomt).
Figue 1.3 sho ws a diode in Series cith a
A00 esi stor (R) ahd supply voltage (E). The po larty
E is Such that the diode ts forwåd biased
APPging kVL we get
Bl00n +E-IeR-V =0
E
SV
VE
E=(+) +Ye’
Figure 1,3: diode circuit.
Drauinga de load ine on the dzode charactasistics:
’ By Substi tuting Ip 20 in eq, we t.
E= (lpR) + Ye= 0+ Y
E = V =5v
Plet poiot A the diode charactarisics at

Now, Substi tute Vp =0 in eq), we get

I=.Sv SomA.
R
Plot point-B on the diode characteistic at
Ip SonA and Ve z0v
 Draw the de load ne tha0ugh points Aand B.
de-bas
T co,somh) pointr potnt)
(quiescent
So Qpoint urve
characerishic
40 vî
Drode
De load line
30

20

4 (S,0)
2 3 4 ) Pigure 4. 4: De load line
anaysis.
Recti frerst
Every eleetzonte crcwst qequires a de pocwe
[eurce. This.de power can be obtained by de bOwer Suppy
OT batteies. But usually batteries aTe used
Supply in poatable usualy
for pocuer
electoric equiprents (e-g, mobila phones
|Lapteps). Howereo, it is convenjent and economical t
obtain thts de power from ac pweT Supply eohich
usually consists of ctifier,ilter and eulator oto
con vest ac pouwe into de poases.
A vecti fier is electvontc eircwt used for
Convesting ac votage r
T curent into de vo Itage ar
CuTTent. Thee aane two booad catiqories of retifrens
They are,
<a) Half-wae Rectifiess Positive Half-ave Rectiter
Negatie talf-aare Rectifes.
<) Full-Ware Rectifress ’Tawo-diode Ful-wae Rectiier.
’Bridge Pecttfier
 Positive Half-Wave Rectifiex :
4 diode posttive half -Wawe re ctifter cir cuit is
4igure i.s below. The ciruit consists of a
shown in Jgune
Stap-douwn transfor mer, a diode and a resisto, kL,all
Connec d in sTies.

230 V, w
ac supplg V;

Fiquge 4.s: Positive Half-ave Rectifrer.

Lc. voltage to be ectifed is app l;ed ac0$S
The a.c.

the primarg of the transfomer and that ac0Ss the sec

-ndany isavilable for 'ectigieation.
Let the vo ltage acOSS
ac the secondaoy of the toansf
-mer be,
V= Ypi sinwt’O V =

+ Vpi
37 +
2n 47
Awt

-Vpi
++Vpo
+ +
27
wt
4n

Figue 4.6 : Input and output woefoms.

Dusing postive -balf yces
yodas of the inpt, the d D,
forsngd biased ohd it is evese-biascd duoing negatne
|-halt eyeles af the input.
 .

’ The peak atput voltage is given

’ The peak lood cument is gven byo

Vpo
RL
’ The average oT de vaue of load cusAent is :
Tocave) (4)
The ayerage n de alue of outpt voltage is :
Ve(avey Vpo

’ The ms value o lood cuAant is :

p
Locms) 2

The ns vaue
°f output voltage is :
Vpo
Volns) 2

’ The mectgeatron effüency is :

7.= PdePac
X\00

tohee, 2
Pdc = Io(ave) Ru
2
Pac = IoCrmg) RL
SKSVMACET/ECE/Basic Electronics
’ The ipple factor o) is given by
[lo(Tms) 72
-1
|Lo (ave)
’ The Peak Invease Votage (Pr) ßT Peak Revezse Vo Itnge
is defined as the maximum per missible revease- bias
votage without breakdouon.
PIV =\ = Vpr (10)

Example 4,2 A diode eoith Ve =0.7V is COnnectad as a halt

wave ectifiet. The load esistane is so0 S,and the (mm)
ac Tnput is 22V, Detimine the peak outut voltage, the peak
load cuovent,and the diode peak everse voltage.
Solution : Gtven data-’ V =0.7V, Ri= S00N, V; =22v,
Vpo=? I;=?, Pry =9
W. k.T.
V;= Pi Vpi = VX2, = 22 xAZ = 3/.Iy

30.4 V.
Fom: VpoVpi Y = 31.JN- 0.7V =
30.4V 60.8 mA,

om o): PIV Ve= Ypi = 31.1V

Example 4.32 A half-wave gectifier produces a 4omA peak
Load eurent though a 1.2 kk sistor. 14 the dio de is
silicon, cal culata the Tms Tnput voltage and he diode Pry,
Solution: Given data Ip =4omA , R=4,2kA, &i diode,
VF=0.FY, V;=?, PIV=9.

Mr. Basavaraj S. Soratur, Dept. of ECE Page No:

 Mr. SKSVMACET/ECE/Basic
Electronics
aj
e
f inputthdiocde inputac Foom
(40): equation
Prom Vi From 8)
230V Negati
S.
r, positve polaoity ve
ac The
pt. mathematical
analysis The haly-
Jiguo PLV Cam)V
of wave Vpi YpVpor -
ECE half-waMewovefomm in Ypo Ypo
=Vpo = =
e
thabove RLYo VR=
= omA) p
ciTcuat. e = 84. N2 RL
shews ctifier: Vpi t
eetifre. ppear 436IV *
= =
The Vo (l.2
48.7V 48.7V
the 8V+
at
negative KA)
js
the effect cwaefong
Qutpu 27
the 0.4V
output.
Same of 31 =
halt-cyelas
eversing 4s.y
a
No:e that

ot the