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Basic Electrionics Engineering - Que Bank - 2024 Pattern

Basic electronics engineering

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0% found this document useful (0 votes)
177 views7 pages

Basic Electrionics Engineering - Que Bank - 2024 Pattern

Basic electronics engineering

Uploaded by

Anuja Fund
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SINHGAD COLLEGE OF ENGINEERING, PUNE.

(Approved by AICTE, Recognized by Govt. of Maharashtra and Affiliated to Savitribai Phule Pune University)
44/1, Vadgaon (Bk), Off Sinhgad Road, Pune – 411041

First Year Engineering Department


Question Bank
----------------------------------------------------------------------------------------------------------------
Basic Electronics Engineering – BXE (ESC101)
(2024 pattern)
----------------------------------------------------------------------------------------------------------------
UNIT I
Diodes and Applications

Que. PI
Question Marks BL CO PO
No. Code
Explain Impact of Electronics on Industry and
Q.1 [5] 1 1 1 1.3.1
Society.
Write a note on Active & Passive Component also
Q.2 [5] 1 1 1 1.3.1
Compare both.

Explain Diffusion & Drift Current also Compare [5]


Q.3 2 1 1 1.3.1
both.

Draw & explain Bridge rectifier with circuit Diagram [6]


Q.4 [5] 2 1 1,2
also draw input & output waveform.

Draw & explain full wave rectifier with Circuit [6]


Q.5 [5] 2 1 1,2
Diagram also draw input & output waveform.

With neat sketch Explain V- I Characteristics of PN [5]


Q.6 2&3 1 1 1.3.1
junction Diode.

Compare performance of HWR, FWR and Bridge 1.3.1


Q.7 rectifier. [5] 2 1 1,2 &
2.1.3
Write a short note on Light Emitting Diode (LED).
OR [5]
Q.8 2&3 1 1 1.3.1
With the help of characteristics, explain LED
construction and operation.

Write short note on Photodiode.


OR [6]
Q.9 2&3 1 1 1.3.1
Explain the working principle of Photodiode with
characteristics.
In a center tapped FWR, the rms half secondary [5]
Q.10 3 1 1 1.4.1
voltage is 10 V. Assuming ideal diodes and Load
resistance of RL is equal to 2 kilo ohm. Find:

i. Peak current
ii. DC load Voltage
iii. Ripple factor
iv. Efficiency of rectification
For a Bridge Rectifier, the RMS secondary voltage of
transformer is 12.7V. Assuming ideal diodes and
Load resistance of RL is equal to 2 kilo ohm. Find:

i. Peak current
Q. 11 [6] 3 1 1 1.4.1
ii. DC Load Current
iii. DC load Voltage
iv. RMS Current
v. Peak inverse voltage of diode
vi. RMS voltage across load
UNIT II
Transistors and Technology

Que. PI
Question Marks BL CO PO
No. Code
Define Bipolar Junction Transistor (BJT). Explain 1.1.1,
Construction of BJT with respect to area and doping [3] 1, 2.1.3
Q.1 2 1,2
Concentration. Mention its types. For BJT, if IB=20μA [2] 3 &
and IE=2mA Calculate value of IC and β (Beta). 1.3.1
Explain Common Emitter (CE) Configuration of BJT
Q.2 and also Draw the characteristics (Input & Output) of [5] 2 2 1 1.3.1
CE.

Q.3 Compare CE, CB and CC BJT configurations [5] 4 2 1 1.3.1

Define α, β and γ in case of transistor (Current 1.1.1


Amplification Factor for CB, CE, CC). Derive the ,
[2] 1,
Q.4 relationship between them. If α=0.98, calculate value 1,3 2 2.1.3
[3] 2
of β. &
1.3.1
Explain operation of BJT as a switch with neat circuit
Q.6 diagram & Waveform. Why CC and CB configuration [5] 2&3 2 1 1.3.1
are not preferred for BT as a switch?

Explain with a circuit diagram a single stage common


Q.7 emitter amplifier. State the function of each [5] 2 2 1 1.3.1
component in the circuit.

Draw the construction diagram and explain operation


Q.8 of n-channel EMOSFET. Also explain Drain & [5] 2&3 2 1 1.3.1
Transfer Characteristics.

Explain Following Application of MOSFET


Q.9 [6] 2 2 1 1.3.1
1. Switch 2. Amplifier
Compare Bipolar Junction Transistor (BJT) and
Q. 10 EMOSFET. [5] 2 2 1 1.3.1

Q. 11 Explain N Well method of VLSI CMOS manufacturing [6] 1&2 2 1 1.3.1

Explain the following terms 1.3.1


Q.12 i) Feature size of a transistor ii) Channel length of [6] 2 2 2 &
transistor 2.1.3
UNIT III
Logic Gates and Digital Circuits

Que. PI
Question Marks BL CO PO
No. Code
State and prove De’Morgan’s sum & product theorem [2] 1,
Q.1 with the help of truth table. 1, 3 3 1.3.1
[4] 2
Implement Half adder using gates, truth tables & give 1,
Q.2 equations for Sum & Carry. [6] 3 3 1.3.1
2
What is Full Adder? Explain the working of Full Adder
with Truth Table and equation for Sum and Carry? 1,
Q.3 [6] 3 3 1.3.1
Implement Full Adder using two half Adder. 2

Explain operation of SR, JK, D & T flip-flop with its 1,


Q.4 truth table. [6] 2 3 1.3.1
2

Draw block diagram of Microprocessor and explain 1


Q.5 [6] 2 3 & 1.3.1
each block.
12
Draw block diagram of Microcontroller and explain 1
Q.6 [6] 2 3 & 1.3.1
each block.
12
Q.7 Compare Microprocessor and Microcontroller. [5] 2 3 1 1.3.1

Q.8 Why NAND and NOR gate are called universal gates? [6] 2 3 1 1.3.1

[6] 1,
Q. 9 Explain Digital IC Design flow. 2 3 1.3.1
2
UNIT IV
Operational Amplifier and Electronic Instruments

Que. PI
Question Marks BL CO PO
No. Code
What is Opamp ? Draw and explain the functional
Q.1 [6] 2&3 2 1 1.3.1
block diagram of an Opamp?

Define with typical & ideal values for IC 741, the


following Opamp parameters?
i. Voltage Gain
ii. Input Offset Voltage (Vio)
iii. Input Offset Current (Iio)
iv. Input Bias Current (IB) [7]
Q.2 1 2 1 1.4.1
v. Input Resistance(Ri)
vi. Output Resistance (Ro)
vii. CMRR
viii. PSRR
ix. Slew Rate
x. Bandwidth (B.W.)
Draw and Explain following application of OPAMP
1.Inverting Amplifier [6]
Q.3 2 2 1 1.3.1
2. Non - Inverting Amplifier
Also Compare Inverting & Non Inverting Amplifier
For the inverting amplifier using op-amp if Rf=100KΩ,
Ri=10KΩ, Vcc=±10V, Vi=2V 2.1.3
Q.4 i) Calculate Output voltage [5] 3 2 2 &
ii) Is the Result in Part (i) is practically possible? 1.1.1
Justify.
With the help of a block diagram, explain the 1
Q.5 [6] 2&3 4 & 1.3.1
operation of Digital Multimeter (DMM).
12
Draw & explain Block diagram of Function Generator
Q.6 [6] 2&3 4 1 1.3.1
(FG).

Draw the block diagram of a Digital Storage


Q.7 [6] 2&3 4 1 1.3.1
Oscilloscope (DSO) & explain its operation.

Explain working of the Regulated Power supply (DC


Q.8 [6] 2&3 4 1 1.3.1
power Supply) with block diagram.
UNIT V
Sensors and Communication Systems

Que.
Question Marks BL CO PO PI Code
No.
What is Transducer? Give comparison of active 2&
Q.1 [5] 5 1 1.3.1
and passive sensors. 3
Explain the principle of operation, construction
and working of an L.V.D.T. type Accelerometer 1.3.1
Q.2 Also state its advantages, disadvantages and [6] 1 5
& 2.1.3
applications. 1&2

Explain the principle of operation, construction


and working of thermocouple. Also state its 1.3.1
Q.3 [6] 1 5
advantages, disadvantages and applications. & 2.1.3
1&2
Explain the principle, construction and working
of an R.T.D. Also state its advantages, 1.3.1
Q.4 [6] 1 5
disadvantages and applications. 1&2 & 2.1.3

Explain the principle, construction and working


of a strain gauges. Also state its advantages, 1.3.1
Q.5 [6] 1 5
disadvantages and applications. 1&2 & 2.1.3

Explain working, principle and one application 1.3.1


Q.6 of a biosensor. [5] 2 6
1&2 & 2.1.3
Draw & Explain block diagram of IoT based
Q.7 Data Acquisition System [6] 2 6 2 1.3.1

Draw & Explain block diagram of IoT based


Q.8 Automation System [6] 2 6 2 1.3.1

With the help of block diagram, explain


Q. 9 Operation of Electronic Communication System. [6] 2 6 2 1.3.1

What is the need of modulation? What are the [6] 2&


Q.10 6 1 1.3.1
different types of modulation techniques? 3
Write a Short note on: 2.1.2&
Q. 11 i) Twisted Pair Cable ii) Coaxial Cable iii) Optical [6] 2 6 1 12.1.2
Fiber Cable
Draw & Explain IEEE Electromagnetic 2.1.2&
Q. 12 [6] 2 6 2
Spectrum with application 12.1.2
Q. 13 Explain Cellular Concept of Mobile [6] 2 6 2& 2.1.2&
Communication System 12 12.1.2

Draw and Explain block diagram of GSM 1& 2.1.2 &


Q. 14 system. [6] 2 6
12 12.1.2

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