PD - 91581B

IRG4PC50S-P
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT

Features C

• Standard: Optimized for minimum saturation

voltage and low operating frequencies ( < 1kHz) VCES = 600V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
G VCE(on) typ. = 1.28V
Generation 3
• Industry standard TO-247AC package
E @VGE = 15V, IC = 41A
• Surface Mountable
n-channel

Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's

Surface Mountable
TO-247

Absolute Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 70
IC @ TC = 100°C Continuous Collector Current 41 A
ICM Pulsed Collector Current Q 140
ILM Clamped Inductive Load Current R 140
VGE Gate-to-Emitter Voltage ± 20 V
EARV Reverse Voltage Avalanche Energy S 20 mJ
PD @ TC = 25°C Maximum Power Dissipation 200
W
PD @ TC = 100°C Maximum Power Dissipation 78
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Max Reflow Temperature 225

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.64
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient, typical socket mount ––– 40

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IRG4PC50S-P
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
V(BR)ECS Emitter-to-Collector Breakdown Voltage T 18 — — V VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.75 — V/°C VGE = 0V, IC = 1.0mA
— 1.28 1.36 IC = 41A VGE = 15V
VCE(ON) Collector-to-Emitter Saturation Voltage — 1.62 — IC = 80A See Fig.2, 5
V
— 1.28 — IC = 41A , TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -9.3 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance U 17 34 — S VCE = 100V, IC = 41A
— — 250 VGE = 0V, VCE = 600V
ICES Zero Gate Voltage Collector Current µA
— — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 180 280 IC = 41A
Qge Gate - Emitter Charge (turn-on) — 24 37 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) — 61 92 VGE = 15V
td(on) Turn-On Delay Time — 33 —
tr Rise Time — 30 — TJ = 25°C
ns
td(off) Turn-Off Delay Time — 650 980 IC = 41A, VCC = 480V
tf Fall Time — 400 600 VGE = 15V, RG = 5.0Ω
Eon Turn-On Switching Loss — 0.72 — Energy losses include "tail"
Eoff Turn-Off Switching Loss — 8.27 — mJ See Fig. 9, 10, 14
Ets Total Switching Loss — 8.99 13
td(on) Turn-On Delay Time — 31 — TJ = 150°C,
tr Rise Time — 31 — IC = 41A, VCC = 480V
ns
td(off) Turn-Off Delay Time — 1080 — VGE = 15V, RG = 5.0Ω
tf Fall Time — 620 — Energy losses include "tail"
Ets Total Switching Loss — 15 — mJ See Fig. 11, 14
LE Internal Emitter Inductance — 13 — nH Measured 5mm from package
Cies Input Capacitance — 4100 — VGE = 0V
Coes Output Capacitance — 250 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 48 — ƒ = 1.0MHz
Notes:

Q Repetitive rating; VGE = 20V, pulse width limited by T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
max. junction temperature. ( See fig. 13b )
U Pulse width 5.0µs, single shot.
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,
(See fig. 13a)

S Repetitive rating; pulse width limited by maximum

junction temperature.

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 IRG4PC50S-P
100
F o r b o th : T ria n g u la r wa v e :
D uty cy c le: 50%
I
T J = 125° C
80 T s ink = 90°C
Ga te drive as s pec ified
P o w e r D i ss i p a tio n = 4 0 W C la m p v o lta g e :
Load Current ( A )

8 0 % o f ra te d
60
S q u are wa ve:
6 0 % o f ra te d
vo lt a g e
40

20
Id e a l di o de s

0 A
0.1 1 10 100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

1000 1000
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)

100 100


TJ = 150 o C

10 10
 150 o C 
TJ = 25 oC
TJ =

TJ = 25 o C

1

V GE= 15V
20µs PULSE WIDTH
1

V = 50V
CC
5µs PULSE WIDTH
0.1 1 10 5 6 7 8 9 10
VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4PC50S-P
80


L IM IT E D B Y P A C K A G E V G E = 15 V 2.2
VGE = 15V
80 us PULSE WIDTH

VCE , Collector-to-Emitter Voltage(V)


M axim um D C C ollector C urrent (A)

2.0 I C = 82 A
60
1.8

1.6
40

1.4

I C = 41 A

1.2
20

I C =20.5 A
1.0

0 0.8
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
T C , C ase Tem perature (°C) TJ , Junction Temperature ( ° C)

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature vs. Junction Temperature

0.50
Thermal Response (Z thJC )

0.20
0.1
0.10

0.05


0.02

0.01
0.01
 SINGLE PULSE
(THERMAL RESPONSE)
P DM

t1
t2

0.001

Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC

0.00001 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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 IRG4PC50S-P


8000


20
VGE = 0V, f = 1MHz VCC = 400V
Cies = Cge + Cgc , Cce SHORTED I C = 41A
Cres = Cgc

VGE , Gate-to-Emitter Voltage (V)

Coes = Cce + Cgc 16
6000
C, Capacitance (pF)


Cies 12

4000

C
2000
oes 4


Cres

0 0
1 10 100 0 40 80 120 160 200
VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

 
10.0 100
V CC = 480V 5.0Ω
RG = Ohm
V GE = 15V VGE = 15V
TJ = 25 ° C VCC = 480V
I C = 41A 
IC = 82 A
Total Switching Losses (mJ)

Total Switching Losses (mJ)

9.5

IC = 41 A

10

IC = 20.5 A

9.0

8.5 1
0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160
RRGG , Gate Resistance( (Ohm)
Gate Resistance Ω) TJ , Junction Temperature ( °C )

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
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IRG4PC50S-P

 
40 1000
RG 5.0Ω
= Ohm VGE = 20V
TJ = 150 ° C T J = 125 oC

I C , Collector-to-Emitter Current (A)

VCC = 480V
VGE = 15V
Total Switching Losses (mJ)

30
100

20

10

10

SAFE OPERATING AREA

0 1
0 20 40 60 80 100 1 10 100 1000
I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current

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 IRG4PC50S-P

L D .U .T.
VC * 480V
RL =
4 X I C@25°C
50V 0 - 480V
1 00 0V 480µF
960V
Q
R

* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )

* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.

Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector

Load Test Circuit Current Test Circuit

IC
L
D river* D .U .T. Fig. 14a - Switching Loss
VC Test Circuit
50V
1000V
* Driver same type
Q as D.U.T., VC = 480V
R S

90 %

S 10 %

VC
90 %
t d (o ff)
Fig. 14b - Switching Loss
Waveforms

1 0%
IC 5%
tr tf
t d (o n ) t=5µ s
Eon E o ff
E ts = (E o n +E o ff )

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IRG4PC50S-P

TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

3 .65 (.1 43 ) -D-

15 .90 (.6 26 ) 3 .55 (.1 40 ) 5 .3 0 (.2 09 )
15 .30 (.6 02 ) 4 .7 0 (.1 85 )
0.25 (.0 1 0) M D B M
-B - -A - 2 .5 0 (.08 9)
1 .5 0 (.05 9)
5 .50 (. 217 ) 4

2 0 .3 0 (.80 0)
1 9 .7 0 (.77 5) 5.5 0 (.2 17) NO TES :
2X
4.5 0 (.1 77) 1 D IME N SION ING & TO LE R AN CING
P E R A NS I Y14.5M, 1982.
1 2 3 2 C ON TR OLLIN G D IME N SIO N : IN CH .
3 C ON F OR MS TO JED E C OU TLIN E
-C- T O-247-A C .
14 .8 0 (.5 83 )
4.3 0 (.1 70)
14 .2 0 (.5 59 )
3.7 0 (.1 45)

2 .40 (. 094 ) LE AD A S SIG N MEN TS

1 .40 (.0 56 ) 0 .80 (.03 1)
2 .00 (. 079 ) 3X 1 .00 (.0 39 ) 3 X 0 .40 (.01 6) 1 - GA TE
2X 2 - DR AIN
0 .2 5 (.0 10 ) M C A S 2 .60 (.1 0 2) 3 - SO UR C E
5.45 (.21 5) 2 .20 (.0 8 7) 4 - DR AIN
3 .40 (.13 3)
2X 3 .00 (.11 8)

TO-247AC Part Marking Information

E X A M P L E : T H IS IS A N IR F P E 3 0 A
W IT H A S S E M B L Y PA R T NU M B E R
LOT C ODE 3A1Q IN T E R N A T IO N A L
R E C T IF I E R IR F P E 30
LOGO
3A1Q 9302
A S SE M B L Y D ATE CO DE
LOT CODE (Y Y W W )
Y Y = YE A R
W W W EEK

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/02

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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/