412 ◆ F IELD -E FFECT T RANSISTORS (FET S )
At the origin, where VDS = 0 V and ID = 0 mA, the formula for transconductance,
introduced earlier in this chapter, is
VGS
gm = gm0 a 1 - b
VGS(off)
where gm is transconductance and gm0 is transconductance for VGS = 0 V. gm0 can be cal-
culated from the following equation, which was also given earlier:
2IDSS
gm0 =
|VGS(off)|
EXAMPLE 8–15 For the characteristic curve in Figure 8–33, calculate the ac drain-to-source resistance for a
JFET biased at the origin if VGS = -2 V. Assume IDSS = 2.5 mA and VGS(off) = -4 V.
Solution First, find the transconductance for VGS = 0 V.
2IDSS 2(2.5 mA)
gm0 = = = 1.25 mS
|VGS(off)| 4.0 V
Next, calculate gm at VDS = -2 V.
VGS -2 V
gm = gm0 a1 - b = 1.25 mSa 1 - b = 0.625 mS
VGS(off) -4 V
The ac drain-to-source resistance of the JFET is the reciprocal of the transconductance.
1 1
r¿ds = = = 1.6 kÆ
gm 0.625 mS
Related Problem What is the ac drain-to-source resistance if VGS = -1 V?
SECTION 8–4 1. For a certain Q-point in the ohmic region, ID 0.3 mA and VDS 0.6 V. What is
CHECKUP the resistance of the JFET when it is biased at this Q-point?
2. How does the drain-to-source resistance change as VGS becomes more negative?
3. For a JFET biased at the origin, gm 0.850 mS. Determine the corresponding ac
resistance.
8–5 T HE MOSFET
The MOSFET (metal oxide semiconductor field-effect transistor) is another category
of field-effect transistor. The MOSFET, different from the JFET, has no pn junction
structure; instead, the gate of the MOSFET is insulated from the channel by a silicon
dioxide (SiO2) layer. The two basic types of MOSFETs are enhancement (E) and deple-
tion (D). Of the two types, the enhancement MOSFET is more widely used. Because
polycrystalline silicon is now used for the gate material instead of metal, these devices
are sometimes called IGFETs (insulated-gate FETs).
