MAULANA AZAD

NATIONAL INS TIT UT E OF TECHNOLOG

Y BHOPAL
DEPARTMENT OF PHYSICS ,

B.Tcch. I Scm/11 Scm

CHARACTERISTICS CURVE OF A
TRA NS IST OR
AIM:
To stud y and plot th e transistor inpu
configuration . t and output characteristi cs for commo n
emitter

APPARATUS:
A prepared kit of transistor with connec
ting wires.
THEORY :
Tra nsis tor i~ a three tenninal device, con
sisting of three different doped semi conduc
regions, separated by two junctions. The ting
se ·are named as emitter, base and collector.
The doping in the three regions is not the
same. The doping is heavy in the emitter regi
and is light in base region, while it is only on,
moderate in the collector region. Area of cros
section is also not the -same throughout, s
but goes on increasing from e·mitter tow
. collector. The base region of the transisto ards
r is invariably thin.
The re are two types of junction transisto
rs. Figure shows the cross sections of the
and PN P transistors, along with their elec NPN
trical symbols.

In a transistor_ collector base

p p N junction is always reverse
biased. Naturally small current
flows throul!,h the diode cjrcuit.
C Current in ~this circuit can be
increased by forv.·ard biasing the _
. emitter base junction . Wnen the
::), E emitter base ·junction is forv,ard
biased, heavily doped emitter
ejects large number of maj~rit~
. , se carriers diffuse through the base
carriers into the b~se region: f~e the region. a1_1d e_nter_1nto
increasing current in ,he rnll ecto~. c1rc_\11t
the collector region, :Pn_st1~utingd 1· I tly o~
· b bem g thm doped few of the minorit:Y cmncr: e_1ect~d
··transistor. 8 ut h ase an 1g 1 111_1
bi nation with the opposit'e type of ma.1. or1ty . • .. •tcd 1nt0 1t.
't tost by t e recorn _earn ers_e_1~\n the basZ'
I 'are . of recombination with opp . aJ· ority earners prc~cn
are most by way t'tutes the base current. osite type m, . . ' carriers ejt•ck~d i1111..,
Th' s cons 1 Jhe most of the ma.1orit) ,t ·,s ·tl1110.-;t equal the
~ region . . I d'ffuses into the collector regi • II l r currcr • < to tht'
base region I Hence difference between on. :hi s co ccl~ •cto
•
r current i'.'> the base current
emitter current. emitter and co V
-
of h transistor.
t e · )
, se
. .. t (IE)==: Collector current (le) + 13a. current (In ,
Th £ 111ttercurren _ _- -- -- -:- --f()R
US I - -- - -- ·-
---- 1·RANSI~
·
-------
I
 . . . lied BETA (b). Beta is th e
itter crrcurt rs ca c·
ut current). To
The current gain in the common-em current) to base current mp
t ( t t·
relationship of collector curren ou pu
calculate beta , use the following formula:

( ~ is the Greek letter delta, it is /

used to indicate a small change)

The resistance gain of the common

emitter can be found in a method
similar to the one used for finding
beta:

\'
1 7

equal to
age gain is easy to calculate since it is
Once the resistance gain is known, the volt er gain is
current gain (P) mul tiplied by the resistance gain (E = BR). And , the pow
the
current gain b (P = bE).
equal tot\ v:lt age gain multiplied by the

INPUT CHARACTERISTICS

PROCEDURE:
stant say 1.0 V
I . .Keep collector to emitter voltage con proper
forward biased base emitter junction in
2. Increase de voltage applied to the
ing.
steps and in each case note Vs and Is read
ages.
3. Repeat the steps for different VcE volt

OBSERVATIONS:
a) Least Count of Ammeters =..... .... mA
=...... ... µA
b) Least Count of Voltmeters =...... , .. V .J

TABLE 1:

Ve= Ve=
In VuE / In= Rin Vnr. lo VnE / lo= Rin
Vn•:

-· 'I .
-

-
,
\ fRA NSI STO ~
2

\
 •
From the obsc.rvatron
Ve 1nhlc I . plol " f! rnp h for 111 vc r<, 11 <, V 111 at c~ifl c r<2 nl co l lector vo ltage

OUTPUT CHAR.ACTERISTlc S :
PROCEDURE :
1· Keep base current In co11 s1a111 al sn'), 20 p l\ .
2. Increase co ll cc · cr v o 1la gc V e .111 rrnp c r , tc r " ,rncl l o r
, t or to cm11t c. ac. h ·1alue () f Ve
record corresponding co llector e urrc nl le
3. Repeat the steps for different va lu es of 111.

OBSERVATIONS:
a) Least Co unt of Ammeters = .. ... . ... m i\
. . ... .... µ A
b) Least Count of Voltmeters = .... ... .. V

TABLE 2·.

IB= · I ' IB=

Ve l
le Vele= Rout Ve le Ve/le= Rm , I

I
I

From the observation table 2, plot a graph for le versus Vc1.: at different base current 18 (

Put average Rou! and average Rin in \ ,

, R= :::t\
RESULT:
In the common emitter mode for the given PNP/NPN transistor, the characteristics cun es
are shown in the graphs.

PRECAUTIONS;
.1, The emitter-base junction is kept in forward bias while the co llector-~mitter
junction is kept reverse bius. .
2. A high potential should not be applied i!t ~he base or colle~tor
3. The transistor should not be heated continuously. For this a separak' key sho uld
be connected with the battery both in base and collector circuit.
4. The +ve marked terminal o_f the ammeter and voltmeter should always he
v conneded to the positive tenrnnal of the battery.

'
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-. --·--·-- - -
3 TRANSJSTOR