❖ Tight Binding Model, Hall Effect SET- 7

1. Energy of the electrons that are tightly

bound to the atoms of a Simple Cubic lattice 𝐸(𝑘)
where the effect of other neighboring atoms 𝑘𝑥 𝑎 𝑘𝑦 𝑎 𝑘𝑧 𝑎
= 𝐸0 − 𝛽 − 8𝛾cos⁡ ( ) cos⁡ ( ) cos⁡ ( )
is very little and the wave function of the 2 2 2
electrons overlaps very little with wave
then the effective mass tensor for an
function of electrons of the neighboring
electron at the bottom of the energy band
atom as well, can be written in terms of
can be written as -
Acme positive quantities 𝛽 and 𝛾 as -
ℏ2 +1 0 0
(a) ( 0 −1 0 )
𝐸(𝑘) = 𝐸0 − 𝛽 √𝑎2 0 0 +1
− 2𝛾[cos⁡ 𝑘𝑥 𝑎 + cos⁡ 𝑘𝑦 𝑎
+ cos⁡ 𝑘𝑧 𝑎] ℏ2 1 0 0
(b) (0 1 0)
2𝛾𝑎2
Thus the energy bands are Contained 0 0 −1
within band of width -
(a) 12⁡𝛾 (b)
4𝛾 ℏ2 1 0 0
𝛽 (c) (0 1 0)
2𝛾𝑎2
5𝐸0 𝛽 2 0 0 1
(c) 15𝛾𝐸0 (d)
𝛾
2. The energy near a Valence band edge is ℏ2 −1 0 0
(d) ( 0 −1 0)
given by 𝐸𝑘 = −1 × 10−26 𝐾 2 erg. An 𝛾𝑎2
0 0 −1
electron is removed from the state
4. In the tight binding approximation, the
𝑘 = 1 × 107 k 𝑥 ⁡cm−1 . energy 𝐸(𝑘) for an one dimensional linear
lattice of lattice constant ' 𝑎 ' is given by -
The band is otherwise full. The effective
mass and velocity of the holes can be 𝐸(𝑘) = 𝐸0 − 𝛽 − 2𝛾cos⁡(𝐾𝑎)
written as -
(a) −5 × 10−29 ⁡g⁡&2 × 108 kx⁡cm/s the two nearest neighbor of the origin are
(b) −5 × 10−29 ⁡g⁡& − 2 × 108 kx⁡cm/s at ±𝑎. the effective mass of the electrons
(c) 5 × 10−29 ⁡g & 1.27 × 108 kx⁡cm/s bound to those atoms that has very Small
(d) −4.78 × 10−29 ⁡g & −2.54 × 108 kx⁡cm/s over lapping of wavefunctions is given by-
ℏ2 ℏ2
(a) (b)
3. In the tight binding approximation the 𝛾𝑎2 4𝛾𝑎2
energy 𝐸(𝑘) for body Centre Cubic lattice is 𝛾ℏ2 ℏ2
(c) (d)
given by – 4𝑎2 2𝛾𝑎2
5. Considering the tight binding 7. Calculate the magnitude of the fermi energy
approximation of an electron in a periodic for 4.2 × 1021 electrons confined in a box of
lattice gives rise to the low energy volume 1⁡cm3 .
dispersion relation (a) 1.1eV (b) 5.28eV
(c) 0.94eV (d) 0.21eV
𝐸(𝑘) = 𝐸0 − 𝛽 − 6𝛾 + 𝛾𝑘 2 𝑎2
8. Obtain the expression of wavelength
Now if we exposed the given lattice under
associated with an electron having an
some external applied field (Either it is
energy equal to the Fermi energy - ( 𝑁 is the
electric or magnetic in nature), as a result it
number density)
leads to the effective increment of the
4𝜋 1/3 8𝜋 1/3
energy bandwidth. which of the following is (a) ( ) (b) ( )
𝑁 3𝑁
NOT CORRECT regarding the physical 2/3 2/3
8𝜋2 4𝜋2
scenario stated above. (c) ( ) (d) ( )
3𝑁 𝑁
(a) Over lapping of wavefunctions for
consecutively situated electrons become
9. If the energy ' 𝐸 ' and the wave Vector' 𝐾 of
very significant.
electrons are related as -
(b) The effective mass of those electrons
placed periodically become very small ℏ2
(c) Electrons become quite mobile in 𝐸= (1 − cos⁡ 𝑘𝑎),⁡for 0 ≤ 𝑘 ≤ 𝜋/𝑎
2𝑚
nature.
(d) The measure of the extent to which an where ' 𝑎 ' is the distance and ' 𝑚 ' is the
electron in state 𝑘 is free become less. mass of a free electron, then at which range
the electrons will have hole like behaviour?
6. Considering the conduction of electrons (a) 0 ≤ 𝑘𝑎 ≤ 𝜋 (b) 𝜋 ≤ 2𝑘𝑎 ≤ 3𝜋
𝜋
throughout the periodic potential of a solid (c) 4 ≤ 𝑘𝑎 ≤ 𝜋 (d) 0 ≤ 𝑘𝑎 ≤ 𝜋/2
as a motion of nearly free negatively
charged particle via periodic potential,
which of the following plots of energy 𝐸 10. According to Kronig-penny model, which is
versus wave number showing band not Correct?
structure of the given Solid represents the (a) allowed energy bands are narrower for
correct description - low value of energy.
(b) allowed energy bands are broader for
large value of energy.
𝑚𝑣0 𝑎2
(c) for lowest energy band is a
ℏ2
measure of the area of the potential barrier.
(d) all values of wave vector are allowed
,
11. If we study the motion of an electron
through the periodic potential under the
inference of an external magnetic field ' 𝐵 ',
then the time period of an electron orbit in
this magnetic. field can be written as -
(where, 𝑑𝐴𝑘 = |𝑑𝑘 × 𝑑𝑘⊥ | is the area of the
orbit in 𝑘-space and 𝑑𝑘⊥ is the normal
distance in 𝐾-space, projected on a plane
 perpendicular to magnetic field) Voltage of 8mV develops at a Current of
ℏ2 𝑑𝐴𝑘 ℏ2 𝑑𝐴𝑘 10⁡mA. calculate the Carrier density.
(a) ⋅ ⁡⁡⁡⁡⁡⁡⁡⁡⁡⁡⁡⁡⁡⁡⁡⁡⁡⁡⁡(b)⁡ ⋅
𝑒𝐵 𝑑𝐸(𝑘) 2𝑒𝐵 𝑑𝐸(𝑘)

ℏ2 𝑑2 𝐴𝑘 ℏ2 𝑑2 𝐴𝑘
(c) ⋅ 2 ⁡⁡⁡⁡⁡⁡⁡⁡⁡⁡⁡⁡⁡⁡⁡⁡⁡(d)⁡ ⋅
𝑒𝐵 𝑑𝐸 (𝑘) 2𝑒𝐵 𝑑𝑡 2 (𝑘)

12. The Hall coefficient of a Certain silicon

Specimen was found to be −7.35 ×
10−5 ⁡m3 c −1 from 100 to 400⁡K. (a) 3.8 × 1019 /⁡m3 (b) 8.2 × 1020 /m3
And the electrical conductivity was found to (C) 4.7 × 1021 /m3 (d) 5.9 × 1021 /m3
be 200Ω−1 ⁡m−1 . Calculate the mobility of
charge Carriers. 15. A sample of ' 𝑠𝑖 ' is doped with 'As' to a level
(a) 15.2 × 10−3 ⁡m3 v −1 ⋅ s −1 of 5 × 1016 atoms /cm3 .
(b) 14.7 × 10−3 ⁡m3 v −1 ⁡s −1 Calculate the Hall voltage if the sample has
(c) 17.3 × 10−3 mv −1 ⋅ s −1 thickness of 200𝜇m, and applied Current in
(d) 11.5 × 10−3 ⁡m3 v −1 ⋅ s −1 the 𝑥 direction, 𝐼𝑥 = 2⁡mA and applied
magnetic field of 5𝑘𝐺.
13. An experimentalist measuring the Hall (Assume 𝜇𝑛 = 800⁡cm2 /Vs ).
effect in a Semiconductor specimen finds (a) 62.5 × 10−5 ⁡V.
Some data that surprise her to some extent (b) 34.2 × 10−6 ⁡V.
that the Hall constant is Vanishingly small (c) −62.5 × 10−5 ⁡V.
even at room temperature. Now imagine (d) −34.2 × 10−6 ⁡V.
her as your Supervisor in your initial days
of P.hD and she ark you to help her out to
interpret this result; then according to the
experimental finding what possible
thersitical statement you would suppose to
state that likely to be responsible for the
experimental outcome - ❖ ANSWER KEY
(a) Electrons plays the Significant role in
the Conduction of the given Semiconductor. 1-a 2-b 3-c 4-d 5-d
(b) The semiconducting material under 6-c 7-c 8-b 9-b 10-d
11-a 12-b 13-d 14-c 15-c
consideration is way more thicker than
usual.
(c) The current passing through the
Semiconductor is very high.
(d) The semiconducting material used in
this experiment is weakly 'p'type doped.

14. A sample of an 𝑛-doped semiconductor is in

the shape of a slab whose length is 5⁡cm,
width 0.5⁡cm, and thickness 1⁡mm. When
this slab is placed in a magnetic field of
0.6⁡Wb/m2 normal to the Slab, a Hall