APD-SERIES
APD-SERIES
APD-SERIES
Features
Established PIN diode process
Low capacitance designs
Voltage ratings to 200 V
Tight control of I layer base width
Description
The Isolink APD series of silicon PIN diodes are designed for use
as switch and attenuator devices in high-performance RF and
microwave circuits. The PIN diode designs are useful over a wide
range of frequencies from below 100 MHz to beyond 20 GHz.
These devices use a well-established silicon technology resulting
in PIN diodes with tightly controlled I-region characteristics.
The low capacitance and low resistance of the APD0505 through
APD1520 diodes are ideal for switch applications that require
insertion loss and fast switching speed. For switch or attenuator
applications requiring high power and low distortion, the thick I-
region and high reverse breakdown voltage of the APD2220 is
ideal.
The absolute maximum ratings of the APD diode series are
provided in Table 1. Electrical specifications are provided in
Table 2. Typical performance characteristics are provided in
Figures 1 through 6.
ESD HANDLING: Although this device is designed to be as robust as possible, electrostatic discharge (ESD) can damage this device.
This device must be protected at all times from ESD when handling or transporting. Static charges may easily produce
potentials of several kilovolts on the human body or equipment, which can discharge without detection.
Industry-standard ESD handling precautions should be used at all times.
Switching Applications
APD0505-203 0.30 0.35 2.5 70 50 5 232
APD0505-210 0.30 0.35 2.5 70 50 5 133
APD0505-219 0.30 0.35 2.5 70 50 5 201
APD0505-240 0.30 0.35 2.5 70 50 5 214
APD0510-203 0.35 0.40 1.5 90 50 5 189
APD0510-210 0.35 0.40 1.5 90 50 5 90
APD0510-219 0.35 0.40 1.5 90 50 5 158
APD0510-240 0.35 0.40 1.5 90 50 5 170
APD0520-203 0.40 0.45 1.0 120 50 5 167
APD0520-210 0.50 0.55 1.0 120 50 5 59
APD0520-219 0.40 0.45 1.0 120 50 5 136
APD0520-240 0.40 0.45 1.0 120 50 5 148
APD0805-203 0.30 0.35 2.0 100 100 8 201
APD0805-210 0.35 0.40 2.0 100 100 8 107
APD0805-219 0.30 0.35 2.0 100 100 8 170
APD0805-240 0.30 0.35 2.0 100 100 8 182
Attenuator Applications
APD2220-203 0.45 0.50 4.0 100 100 50 132
APD2220-210 0.45 0.50 4.0 100 100 50 32
APD2220-219 0.40 0.45 4.0 100 100 50 104
APD2220-240 0.40 0.45 4.0 100 100 50 115
1 Performance is guaranteed only under the conditions listed in this table.
2 Reverse current is specified at 10 μA maximum at the voltage rating noted. Do not exceed this voltage.
1000 1000
APD2220
100 100
Resistance (Ω)
Resistance (Ω)
APD0805-000
10 APD0505-000 10
APD0810
1 APD0510-000 1
203250-001
203250-002
APD1510
0.1 0.1
0.01 0.1 1 10 100 0.01 0.1 1 10 100
Forward Current (mA) Forward Current (mA)
Figure 1. Resistance vs Forward Current @ 1 GHz Figure 2. Resistance vs Forward Current @ 1 GHz
120 30
APD0505
APD0510 APD0505
40 10
203250-003
203250-004
20 5
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
Figure 3. Maximum CW Input Power vs Case Temperature Figure 4. Maximum CW Input Power vs Case Temperature
(-210 Package) (-203 Package)
35 35
APD0505 APD0505
APD0510 APD0510
Maximum CW Input Power (W)
30 APD0520 30
APD0520
APD0805 APD0805
APD0810 APD0810
25 APD1505 25
APD1505
APD1510 APD1510
20 APD1520 20 APD1520
APD2220 APD2220
15 15
10 10
203250-006
203250-005
5 5
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
Figure 5. Maximum CW Input Power vs Case Temperature Figure 6. Maximum CW Input Power vs Case Temperature
(-219 Package) (-240 Package)
Schematic
N-Type
1
1
0.050 (1.27 mm)
0.040 (1.02 mm)
2
2
Schematic
1
0.064 (1.63 mm) 0.124 (3.15 mm)
0.060 (1.52 mm) 0.119 (3.02 mm) Dia.
2 Places
2
Version A
Schematic
1 2
1 2
Version B 203250-009
Schematic
Colored Dot 1 2
Denotes Cathode
Ceramic
Metal
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