2SC5057

Silicon NPN Triple Diffused Planar

Application
HDTV horizontal deflection output

Features
• High breakdown voltage
VCBO = 1700 V

Outline

TO-3PL

1. Base
2. Collector
3. Emitter

1
2
3
2SC5057

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit
Collector to base voltage VCBO 1700 V
Collector to emitter voltage VCEO 900 V
Emitter to base voltage VEBO 6 V
Collector current IC 20 A
Collector surge current IC(surge) 25 A
1
Collector power dissipation PC* 200 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown V(BR)CEO 900 — — V IC = 10 mA, RBE = ∞
voltage
Emitter to base breakdown V(BR)EBO 6 — — V IE = 10 mA, IC = 0
voltage
Collector to emitter cutoff ICES — — 500 µA VCE = 1700 V, RBE = 0
current
DC current transfer ratio hFE — — 38 VCE = 5 V, IC = 1 A
Collector to emitter saturation VCE(sat) — — 5 V IC = 14 A, IB = 3.5 A
voltage
Base to emitter saturation VBE(sat) — — 1.5 V IC = 14 A, IB = 3.5 A
voltage
Fall time tf — — 0.5 µsec ICP =10 A, IB1 = 2 A
IB2 Å –3 A, fH = 31.5 kHz

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 2SC5057

Maximum Collector Power

Dissipation Curve
400

Pc (W)
300

Collector Power Dissipation

200

100

0 50 100 150 200

Case Temperature Tc (°C)

Area of Safe Operation

40
(100V, 20A)
I C (A)

Ta=25°C
30
For picture tube arcing
Collector Current

20

10

(900V, 3A)
0.5 mA
0 500 1000 1500 2000
Collector to Emitter Voltage VCE (V)

Typical Output Characteristics

20
Tc = 25 °C
I C (A)

2.5 A
2.0 A
1.5 A
Collector Current

10 1.0 A

0.5 A

0.2 A

IB = 0
0 5 10
Collector to Emitter Voltage V CE (V)

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2SC5057
DC Current Transfer Ratio vs.
Collector Current
100

h FE
50
75 °C 25 °C

DC Current Transfer Ratio

20

10
Tc = –25 °C

2
VCE = 5 V
1
0.1 0.2 0.5 1 2 5 10 20
Collector Current I C (A)

Collector to Emitter Saturation Voltage

vs. Collector Current
10
Collector to Emitter Saturation Voltage
VCE(sat) (V)

I C / IB = 4
5

0.5
25 °C
75 °C
0.2

0.1
Tc = –25 °C
0.05
0.1 0.2 0.5 1 2 5 10 20
Collector Current I C (A)

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 2SC5057

Base to Emitter Saturation Voltage

vs. Collector Current
10
I C / IB = 4

Base to Emitter Saturation Voltage

V BE(sat) (V)
5

2
Tc = –25 °C 25 °C
1

0.5 75 °C

0.2

0.1
0.1 0.2 0.5 1 2 5 10 20
Collector Current I C (A)

Collector to Emitter Saturation Voltage

vs. Base Current
10
Collector to Emitter Saturation Voltage
V CE(sat) (V)

IC = 8 A
10 A
12 A
14 A
5
16 A

Tc = 25 °C
0
0.1 0.2 0.5 1 2 5 10
Base Current I B (A)

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2SC5057

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1. This document may, wholly or partially, be subject to change without notice.

2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
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or Hitachi, Ltd.
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APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.

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Semiconductor & IC Div.
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Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109

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