Basic MOS Capacitor Theory

Contents
• Physical electronics II
• Fundamentals of modern VLSI devices 2nd edition, pp. 72-85
• Fundamentals of modern VLSI devices 3rd edition, pp. 99-114
Ch. 4.1 and Ch. 4.2

• How to draw MOS band diagrams

• Flat-band condition
• Accumulation
• Depletion
• Threshold voltage
• Strong inversion

91
MOS Capacitor (MOSCAP)
• Metal-Oxide-Semiconductor CAPacitor (MOSCAP)
MOSCAP: TEM image
state-of-the-art: TiN, TaN, etc.
Metallic field plate
(Aluminum or heavily doped poly-Si)
SiO2 thickness: 0.01 ~ 0.1 μm

state-of-the-art: < 2 nm-thick

novel materials: HfO2, Al2O3
(will be discussed later)

Back (substrate) 𝑽
contact 𝑬
𝒅
𝜺 𝜿𝜺𝟎
𝑪 𝑸 𝑪𝑽
𝒅 𝒅
𝟏𝟒
Capacitor
𝜺𝟎 𝟖. 𝟖𝟓 𝟏𝟎 𝐅/𝐜𝐦
92
Qualitative Understanding
• MOSCAP: p-type substrate

accumulation depletion

93
Qualitative Understanding
• MOSCAP: p-type substrate, energy band diagram fundamental

(1) gate voltage (VGS) = 0 V (3) gate voltage (VGS) > 0 V

flat band: no net charge exists

(2) gate voltage (VGS) < 0 V (4) gate voltage (VGS) >> 0 V

∗ 𝑽𝐅𝐁 𝟎 𝐕 → 𝐰𝐢𝐥𝐥 𝐛𝐞 𝐝𝐢𝐬𝐜𝐮𝐬𝐬𝐞𝐝 𝐥𝐚𝐭𝐞𝐫

94
Qualitative Understanding
• MOSCAP: n-type substrate

accumulation

depletion

95
Energy Band Diagram (VFB = 0 V)
vacuum level 𝝌: electron affinity

work function work function

Metal Insulator Semiconductor

x
Si (p-type in most cases)

No current
Metal (e.g. Al)

𝒅𝑬𝑭
𝑱∝ 𝟎
SiO2

𝒅𝒙

VG +_ Appendix: SiO2, Si3N4

96
Energy Band Diagram
• MOSCAP: p-type substrate, energy band diagram fundamental
EF(metal) – EF(semiconductor) = –qVG
𝑬 𝑭 𝑬𝒊 𝑬 𝒊 𝑬𝑭
𝒏 𝒏𝒊 𝒆 𝒌𝑻 , 𝒑 𝒏𝒊 𝒆 𝒌𝑻

accumulation depletion 97
Energy Band Diagram
• MOSCAP: p-type substrate, energy band diagram fundamental
𝑬𝑭 𝑬𝐢,𝐬𝐮𝐫𝐟𝐚𝐜𝐞
minority majority
𝒏𝒔 𝒏𝒊 𝒆 𝒌𝑻
𝑬𝐢,𝐛𝐮𝐥𝐤 𝑬𝑭
𝒑𝐛𝐮𝐥𝐤 𝒑𝟎 𝑵𝑨 𝒏𝒊 𝒆 𝒌𝑻 Inversion: 𝒏𝐬𝐮𝐫𝐟𝐚𝐜𝐞 𝒑𝐛𝐮𝐥𝐤

threshold inversion 98
Energy Band Diagram (VFB ≠ 0 V, General Case)

𝑬𝒈 e = q = 1.6×10-19 C
𝒒 𝝓𝒎 𝑽𝐨𝐱𝟎 𝒒 𝝌 𝝍𝒔𝟎 𝝍𝒇𝒑
𝟐𝒒
cf. pn-junction
𝑬𝒈
𝑽𝐨𝐱𝟎 𝝍𝐬𝟎 𝝓𝒎 𝝌 𝝍𝐟𝐩 𝝓𝒎 𝝓𝒔 𝝓𝒎𝒔
𝟐𝒒
99
Things to Consider When Drawing MOS Band Diagram (1)
• Fermi level (EF) is flat (constant with distance x) in the Si
 Since no current flows in the x direction, we can assume that
equilibrium conditions prevail

• Band bending is linear in the oxide (Let’s think about Gauss’ Law!)
 No charge in the oxide  dE/dx = 0, so E is constant
 dEC/dx is constant

• From Gauss’ Law (D = εE is continuous), we know that the electric

field strength in the Si at the surface, ESi, is related to the electric
field strength in the oxide, Eox:

𝜺𝐒𝐢 𝒅𝑬𝑪 𝒅𝑬𝑪

𝐄𝐨𝐱 𝐄𝐒𝐢 𝟑
𝜺𝐨𝐱 𝒅𝒙 𝐨𝐱
𝒅𝒙 𝐒𝐢 𝐚𝐭 𝐭𝐡𝐞 𝐬𝐮𝐫𝐟𝐚𝐜𝐞

100
Things to Consider When Drawing MOS Band Diagram (2)
• The barrier height for conduction-band electron flow from the Si
into SiO2 is ~3.1 eV
 This is equal to the electron-affinity difference (𝝌𝐒𝐢 and 𝝌𝐒𝐢𝐎𝟐 )
Appendix: SiO2, Si3N4
• The barrier height for valence-band hole flow from the Si into SiO2
is ~4.8 eV

• The vertical distance between the Fermi level in the metal, EF,metal,
and the Fermi level in the Si, EF,Si, is equal to the applied gate
voltage:
p. 97

𝒒𝑽𝑮 𝑬𝐅,𝐒𝐢 𝑬𝐅,𝐦𝐞𝐭𝐚𝐥

101
Energy Band Diagram with Poly-Si Gate
• Work function differences (degenerately doped poly-Si gate)

e𝝍fp

e𝝍fp

n-type poly-Si gate

𝑬𝒈 𝑬𝒈 𝑬𝒈
𝝓𝐦𝐬 𝝓𝒎 𝝌 𝝍𝐟𝐩 ≅ 𝝌 𝝌 𝝍𝐟𝐩 𝝍𝐟𝐩
𝟐𝒒 𝟐𝒒 𝟐𝒒
p-type poly-Si gate
𝑬𝒈 𝑬𝒈 𝑬𝒈 𝑬𝒈
𝝓𝐦𝐬 𝝓𝒎 𝝌 𝝍𝐟𝐩 ≅ 𝝌 𝝌 𝝍𝐟𝐩 𝝍𝐟𝐩
𝟐𝒒 𝒒 𝟐𝒒 𝟐𝒒
102
Flat Band Condition (VG = VFB ≠ 0 V)

V𝐅𝐁fb  𝒎m  𝒔 s
𝐦𝐬
(nMOS)
p. 99

103
Non Flat Band Condition (VG ≠ VFB)
• Voltage drop in a MOS cap.:
𝑽𝑮 𝑽𝐅𝐁 𝑽𝑮 𝝓𝐦𝐬 𝑽𝐨𝐱 𝝍𝒔
• VFB: flat band voltage (𝑽𝐅𝐁 𝝓𝒎 𝝓𝒔 𝝓𝐦𝐬 )
• Vox: voltage dropped across the oxide
(i.e. total amount of band bending in the oxide)
𝑸𝒎 𝑸𝒔
𝑽𝐨𝐱 , 𝐰𝐡𝐞𝐫𝐞 𝑸𝒔 𝑸𝒅 𝑸𝒊 𝑸𝒂
𝑪𝐨𝐱 𝑪𝐨𝐱
• 𝝍𝐬 : voltage dropped in the silicon
(i.e. total amount of band bending in the silicon)
𝒒𝝍𝒔 𝑬𝐅𝐢,𝐛𝐮𝐥𝐤 𝑬𝐅𝐢,𝐬𝐮𝐫𝐟𝐚𝐜𝐞

104
Summary of Biasing Conditions for p-type Si Substrate

increase VG increase VG

VG = VFB VG < VFB VTH > VG > VFB VG > VTH

105
Accumulation (1)
M O S
VG < VFB
3.1 eV | qVox |
n+ poly-Si 𝑬 𝑭 𝑬𝑽
Gate EC ≈ EF,M 𝒑 𝑵𝑽 𝒆 𝒌𝑻
–––––––
VG
+++++++ EV |qVG | |qψs| is small,  0
+
– EC

p-type Si 4.8 eV EF,Si

+ Ev

Mobile carriers (holes)

accumulate at Si surface

𝑽𝑮 𝑽𝐅𝐁 𝝍𝒔 𝑽𝐨𝐱 surface potential

𝑽𝐅𝐁 𝑽𝐨𝐱
106
Accumulation (2)
𝑽𝑮 𝑽𝐅𝐁 𝝍𝒔 𝑽𝐨𝐱
VG < VFB 𝑽𝐅𝐁 𝑽𝐨𝐱
𝑸𝒔 𝑸𝒂
n+ poly-Si 𝑽𝐨𝐱 𝑽𝑮 𝑽𝐅𝐁
𝑪𝐨𝐱 𝑪𝐨𝐱
Gate
–––––––
VG Tox
+++++++ 𝑸𝒂 𝑪𝐨𝐱 𝑽𝑮 𝑽𝐅𝐁 𝟎
+
– Qa (C/cm2)
From Gauss’ Law:
p-type Si
𝑸𝒂
E𝐨𝐱
𝜺𝐨𝐱
Mobile carriers (holes) 𝑸𝒂 𝑸𝒂
𝑽𝐨𝐱 E𝐨𝐱 𝑻𝐨𝐱 𝑻𝐨𝐱
accumulate at Si surface 𝜺𝐨𝐱 𝑪𝐨𝐱
𝜺𝐨𝐱
, 𝐰𝐡𝐞𝐫𝐞 𝑪𝐨𝐱 𝑭/𝐜𝐦𝟐
𝑻𝐨𝐱
107
Depletion (1)

M O S
VFB < VG < VTH
qVox
Wd = xd
n+ poly-Si EC
Gate
+++++++ EF,Si
VG 3.1 eV qψS EV
––––––– qVG
+
– EC ≈ EF,M

p-type Si EV 4.8 eV

Mobile carriers depletion at Si surface

 Surface charge is attributed to the
ionized dopants (acceptors)

108
Depletion (2)
• Depletion approximation is applied (p-type substrate)

𝝆 𝒒 𝒑 𝒏 𝑵𝑫 𝑵𝑨 ≅ 𝒒𝑵𝑨 𝟎 𝒙 𝒙𝒅
𝒅𝐄 𝝆 𝒒𝑵𝑨
≅ 𝜺𝐒𝐢 𝜿𝐬𝐢 𝜺𝟎 𝜿𝐬𝐢 𝟏𝟏. 𝟕
𝒅𝒙 𝜺𝐒𝐢 𝜺𝐒𝐢
𝒙
𝒒𝑵𝑨 𝒒𝑵𝑨 𝒅𝝍
𝐄 𝒙 𝒅𝒙 𝒙𝒅 𝒙
𝒙𝒅 𝜺𝐒𝐢 𝜺𝐒𝐢 𝒅𝒙
𝒙
𝒒𝑵𝑨
𝝍 𝒙 𝒙𝒅 𝒙 𝒅𝒙
𝒙𝒅 𝜺𝐒𝐢
x 𝒙
𝒒𝑵𝑨 𝟐
𝒒𝑵𝑨 𝟐
𝒙 𝒙 𝒙 𝒙
𝟐𝜺𝐒𝐢 𝒅 𝒙𝒅
𝟐𝜺𝐒𝐢 𝒅
𝟏/𝟐
𝒒𝑵𝑨 𝟐 𝟐𝜺𝐒𝐢
𝝍𝒔 𝝍 𝟎 𝒙 ∴ 𝒙𝒅 𝑾𝒅 𝝍
𝟐𝜺𝐒𝐢 𝒅 𝒒𝑵𝑨 𝒔

To find ψS for a given VG, we need to

consider the voltage drops in the
MOS system.
109
Depletion (3)
𝑸𝒔 𝑸𝒅
𝑽𝐨𝐱
VFB < VG < VTH 𝑪𝐨𝐱 𝑪𝐨𝐱
From Gauss’ Law:
n+ poly-Si 𝑸𝒅
Gate E𝐨𝐱
+++++++ 𝜺𝐨𝐱
VG
––––––– 𝑸𝒅 𝑸𝒅
+ 𝑽𝐨𝐱 E𝐨𝐱 𝑻𝐨𝐱 𝑻𝐨𝐱
– Qd (C/cm2) 𝜺𝐨𝐱 𝑪𝐨𝐱
p-type Si If Si substrate is uniformly doped
with doping concentration of NA,

𝟐𝜺𝐒𝐢
𝑸𝒅 𝒒𝑵𝑨 𝑾𝒅 𝒒𝑵𝑨 𝝍𝒔 𝟐𝒒𝑵𝑨 𝜺𝐒𝐢 𝝍𝒔
𝒒𝑵𝑨
𝟐𝒒𝑵𝑨 𝜺𝐒𝐢 𝝍𝒔
𝑽𝑮 𝑽𝐅𝐁 𝝍𝒔 𝑽𝐨𝐱 𝑽𝐅𝐁 𝝍𝒔
𝑪𝐨𝐱 110
Depletion (4)

𝟐𝒒𝑵𝑨 𝜺𝐒𝐢 𝝍𝒔
𝑽𝑮 𝑽𝐅𝐁 𝝍𝒔
𝑪𝐨𝐱
• Solving for ψS, we have

𝒒𝑵𝑨 𝜺𝐒𝐢 𝟐𝑪𝟐𝐨𝐱 𝑽𝑮 𝑽𝐅𝐁

𝝍𝒔 𝟏 𝟏
𝟐𝑪𝐨𝐱 𝒒𝑵𝑨 𝜺𝐒𝐢

𝟐
𝒒𝑵𝑨 𝜺𝐒𝐢 𝟐𝑪𝟐𝐨𝐱 𝑽𝑮 𝑽𝐅𝐁
𝝍𝒔 𝟏 𝟏
𝟐𝑪𝟐𝐨𝐱 𝒒𝑵𝑨 𝜺𝐒𝐢

• Now, we know ψS(VG) and Vox(VG)!

𝑸𝒅 𝟐𝒒𝑵𝑨 𝜺𝐒𝐢 𝝍𝒔
𝑽𝐨𝐱
𝑪𝐨𝐱 𝑪𝐨𝐱
111
Threshold Condition (VG = VTH)

e𝝍s e𝝍fp e𝝍fp

e𝝍s 2e𝝍fp e𝝍s 2e𝝍fn
e𝝍fn

• When VG is increased to the point where ψs reaches 2ψB, the

surface is said to be strongly inverted. (ψB ≡ ψf)
(The surface is n-type to the same degree as the bulk is p-type.)
• This is the threshold condition.
𝑽𝑮 𝑽𝐓𝐇 ⇒ 𝝍𝒔 𝟐𝝍𝑩
⇔ 𝑬𝐢,𝐛𝐮𝐥𝐤 𝑬𝐢,𝐬𝐮𝐫𝐟𝐚𝐜𝐞 𝟐 𝑬𝐢,𝐛𝐮𝐥𝐤 𝑬𝑭
⇔ 𝑬𝑭 𝑬𝐢,𝐬𝐮𝐫𝐟𝐚𝐜𝐞 𝑬𝐢,𝐛𝐮𝐥𝐤 𝑬𝑭
p. 98
𝑬𝑭 𝑬𝐢,𝐬𝐮𝐫𝐟𝐚𝐜𝐞 𝑬𝐢,𝐛𝐮𝐥𝐤 𝑬𝑭
𝒏𝒔 𝒏𝒊 𝒆 𝒌𝑻 𝒑𝐛𝐮𝐥𝐤 𝒑𝟎 𝒏𝒊 𝒆 𝒌𝑻 𝑵𝑨 112
MOS Band Diagram at Threshold

M O S

𝒌𝑻 𝑵𝑨 qVox Wdm
𝝍𝒔 𝟐𝝍𝑩 𝐥𝐧 p. 67 qψB
𝒒 𝒏𝒊 EC

qψB EF,Si
𝑾𝒅@𝑽𝑻𝑯 𝑾𝐝𝐦 qψs EV
qVG

𝟐𝜺𝐒𝐢 EC ≈ EF,M
𝟐𝝍𝑩
𝒒𝑵𝑨 EV

𝟒𝜺𝐒𝐢
𝝍𝑩
𝒒𝑵𝑨

113
Threshold Voltage
• For p-type Si substrate:

𝟐𝒒𝑵𝑨 𝜺𝐒𝐢 𝝍𝒔
𝑽𝑮 𝑽𝐅𝐁 𝝍𝒔 𝑽𝐨𝐱 𝑽𝐅𝐁 𝝍𝒔 p. 110
𝑪𝐨𝐱
𝟒𝒒𝑵𝑨 𝜺𝐒𝐢 𝝍𝑩
𝑽𝐓𝐇 𝑽𝐅𝐁 𝟐𝝍𝑩
𝑪𝐨𝐱
• The above equation assumes, below relation is still valid. p. 110
𝑸𝒅 𝑸𝐝,𝐦𝐚𝐱
𝑽𝐨𝐱 ⇒ 𝑽𝐨𝐱
𝑪𝐨𝐱 𝑪𝐨𝐱
• How about inversion charge at VG = VTH? p. 98 Appendix

• For n-type Si substrate, 𝝍𝑩 𝟎:

𝟒𝒒𝑵𝑨 𝜺𝐒𝐢 𝝍𝑩
𝑽𝐓𝐇 𝑽𝐅𝐁 𝟐𝝍𝑩
𝑪𝐨𝐱
114
Strong Inversion (1)
• Assuming n+ poly-Si gate and p-type Si
 As VG is increased above VTH, the negative charge in the Si is
increased by adding mobile electrons (rather than by depleting
the Si more deeply), so the depletion width remains ~constant
at Wd = Wdm surface potential
Wdm ρ(x)
n+ poly-Si
M O S
Gate
+++++++
VG x
–––––––
+
– Qi (C/cm2)
Qd (C/cm2)
p-type Si
𝝍𝒔 𝟐𝝍𝑩 𝐩𝐢𝐧𝐧𝐞𝐝

𝟒𝜺𝐒𝐢
Significant density of mobile electrons 𝑾𝒅 𝑾𝐝,𝐦 𝝍𝑩
at surface (surface is n-type) 𝒒𝑵𝑨
115
Strong Inversion (2)

𝑽𝑮 𝑽𝐅𝐁 𝝍𝒔 𝑽𝐨𝐱

𝑸𝐝𝐦 𝑸𝒊
𝑽𝐅𝐁 𝟐𝝍𝑩 p. 104
𝑪𝐨𝐱

𝟒𝒒𝑵𝑨 𝜺𝐒𝐢 𝝍𝑩 𝑸𝒊
𝑽𝐅𝐁 𝝍𝒔
𝑪𝐨𝐱 𝑪𝐨𝐱
𝑸𝒊
𝑽𝐓𝐇
𝑪𝐨𝐱

∴ 𝑸𝒊 𝑪𝐨𝐱 𝑽𝑮 𝑽𝐓𝐇

116
Summary of Basic MOSCAP Theory (1)
• Assuming n+ poly-Si gate and p-type Si

≈ 2 B
𝟐
𝒒𝑵𝑨 𝜺𝐒𝐢 𝟐𝑪𝟐𝐨𝐱 𝑽𝑮 𝑽𝐅𝐁
𝝍𝒔 𝟏 𝟏
𝟐𝑪𝟐𝐨𝐱 𝒒𝑵𝑨 𝜺𝐒𝐢
0 VG
accumulation depletion inversion for depletion condition;
VFB VTH
VFB < VG < VTH

𝟒𝜺𝐒𝐢 𝝍𝑩
𝑾𝐝𝐦
𝒒𝑵𝑨

𝟐𝜺𝐒𝐢 𝜺𝐒𝐢 𝟐𝑪𝟐𝐨𝐱 𝑽𝑮 𝑽𝐅𝐁

𝑾𝒅 𝝍 𝟏 𝟏
𝒒𝑵𝑨 𝒔 𝑪𝐨𝐱 𝒒𝑵𝑨 𝜺𝐒𝐢
0 VG
accumulation depletion inversion for depletion condition;
VFB VTH
VFB < VG < VTH

117
Summary of Basic MOSCAP Theory (2)
• Assuming n+ poly-Si gate and p-type Si

𝑸𝒂 𝑪𝐨𝐱 𝑽𝑮 𝑽𝐅𝐁
𝒔 𝒅 𝒊 𝒂
depletion inversion p. 104
0 VG
accumulation
VFB VTH accumulation depletion inversion

accumulation depletion inversion 𝑸𝒂

0 VG
VFB VTH
0 VFB VTH VG
𝑸𝒅 𝒒𝑵𝑨 𝑾𝒅 𝑸𝒅

Qi
accumulation depletion inversion
0 VG 𝐬𝐥𝐨𝐩𝐞: 𝑪𝐨𝐱
VFB VTH

𝑸𝒊 𝑪𝐨𝐱 𝑽𝑮 𝑽𝐓𝐇
118