19/12/2024 Code-A

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MM : 216 Semiconductor. Time : 60 Min.

Semiconductor.

1. (4) 28. (4)

2. (2) 29. (3)

3. (1) 30. (1)

4. (4) 31. (2)

5. (4) 32. (3)

6. (3) 33. (4)

7. (4) 34. (1)

8. (4) 35. (4)

9. (2) 36. (1)

10. (3) 37. (4)

11. (2) 38. (4)

12. (4) 39. (3)

13. (2) 40. (3)

14. (3) 41. (1)

15. (3) 42. (2)

16. (1) 43. (4)

17. (2) 44. (2)

18. (1) 45. (1)

19. (2) 46. (2)

20. (3) 47. (4)

21. (3) 48. (3)

22. (2) 49. (2)

23. (1) 50. (4)

24. (2) 51. (2)

25. (1) 52. (2)

26. (4) 53. (2)

27. (2) 54. (4)

 Hints and Solutions

Semiconductor.

(1) Answer : (4)

Solution:
Hint: Zener diode will ON for V1.5 kΩ > 10 V
Sol.: Suppose diode is not ON.
1.5
V = ( )12
1.5 kΩ 1.5+0.5

=9V
V1.5 kΩ < 10 V ⇒ Diode breakdown does not occur i.e. diode is not ON.
Diode current (ID ) = 0

(2) Answer : (2)

Solution:

¯¯¯¯¯¯ ¯¯¯ ¯¯
¯
Y= A
¯¯
¯ ¯¯
¯ ¯¯
¯ ¯¯
¯
B = A +B

Y=A+B

(3) Answer : (1)

Solution:
Electrons in conduction band move from lower energy state to higher energy state under electric field.

(4) Answer : (4)

Solution:
After a 0.3 volt drop across Ge diode, it will start conducting output = 12 – 0.3 = 11.7 V

(5) Answer : (4)

Hint:
Zener breakdown takes place as voltage increases above 10 V
Solution:

Maximum potential drop across 1500 Ω resistance = 10 V

∴ Potential drop across 500 Ω = 5 V
Current through 500 Ω, i =
5 1
= A = 10 m A ​
500 100

Current through 1500 Ω, i1 = 10

1500
=
1

150
A =
20

3
​
mA

Current through Zener diode = 10 mA −

20

3
​
mA

= 3.33 mA

(6) Answer : (3)

Solution:
Answer (C)

(7) Answer : (4)

Hint:
Net torque about the support would be zero.
Solution:
Let m be mass of metre scale.
 mg(50 – 40) = 40 g(40 – 20) + 20 g(40 – 10)
⇒ m × 10 = 800 + 600
⇒ m = 140 g

(8) Answer : (4)

Solution:
A zener diode is highly doped and used in reverse biased.

(9) Answer : (2)

Solution:
A Zener diode is used in reverse bias to regulate voltage across load.

(10) Answer : (3)

Solution:
As doping concentration increased width of depletion layer decreases.

(11) Answer : (2)

Solution:
Concentration of holes is greater than number of free electrons, so it is a P-type semiconductor.

(12) Answer : (4)

Solution:
Extrinsic semiconductors are also electrically neutral because they contain equal number of acceptors and donors.

(13) Answer : (2)

Solution:
All types of semiconductors are electrically neutral.

(14) Answer : (3)

Solution:
Doped semiconductors remain electrically neutral even though conductivity increases.

(15) Answer : (3)

Hint:
Vdiode = VR (3 Ω)
Solution:

P.d. across 3 Ω is 0.3 V

6.6 = 0.3 + 7I
6.3 = 7I
I = 0.9 A

(16) Answer : (1)

Solution:
Apply the truth table, verify with ¯
¯¯¯¯¯¯¯
A ⋅ B + A.

(17) Answer : (2)

Hint:
If VP > VN then FB and
If VP < VN then RB
Solution:
If Vi > VR , D act as short circuit
∴ V0 = VR

If Vi < VR , D act as open circuit

∴ V0 = V
in

(18) Answer : (1)

Solution:
A

(19) Answer : (2)

Hint:
Zener diode will conduct when potential difference across zener is more than break down voltage.
Solution:
 Potential drop across dropping resistance = 20 V
Current in dropping resistance i =
20

500
= 40 mA

Current in 1 kΩ, i1 =
10

1000
= 10 mA

Current in zener diode = (40 – 10) mA

= 30 mA

(20) Answer : (3)

Solution:
In reverse bias the barrier potential (V0 + Vr ) becomes large. Therefore, the diffusion current is usually negligible for
reverse bias.

(21) Answer : (3)

Solution:
As doping concentration increased width of depletion layer decreases.

(22) Answer : (2)

Hint:
D1 is forward biased and D2 isreverse biased
Solution:

6
I =
50+150+100

I = 0.02 A

(23) Answer : (1)

Hint:
Use KVL
Solution:

12
I =
6

I = 2mA

(24) Answer : (2)

Hint:
E − Vg
R =
I

Solution:
6− 2
R =
−3
= 4000 Ω = 4 kΩ
1 × 10

(25) Answer : (1)

Hint:
Use K.V.L and KCL
Solution:

0.7 V
Now, I1 =
0.5 kΩ

I1 = 1.4 mA
10–0.3–0.7
I = = 9 mA
10 kΩ

ID = I – I1 = (9–1.4) mA = 7.6 mA.

 I1, ID and I = 9 mA, 7.6 mA and 1.4 mA.

(26) Answer : (4)

Solution:
A zener diode is highly doped and used in reverse biased.

(27) Answer : (2)

Solution:
Concentration of holes is greater than number of free electrons, so it is a P-type semiconductor.

(28) Answer : (4)

Hint:
De Morgan's law ¯¯¯¯¯¯¯¯¯
A+B = A ⋅B
¯¯
¯ ¯¯
¯

¯
¯¯¯¯¯¯¯ ¯¯
¯ ¯
¯
A ⋅ B = A + B̄

Solution:
¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯¯
y= ¯¯
¯
A ⋅ (B + C )

¯¯¯
= ¯¯
A
¯ ¯¯¯¯¯¯¯¯¯
+B+C (By De Morgan's law)
= ¯¯
¯ ¯¯
¯
A+B ⋅C

¯¯
¯ ¯¯
¯
y = A+B ⋅C

(29) Answer : (3)

Hint:
For excitation (λ ≤ λ0), where λ0 is threshold wavelength.
Solution:
12400
Eg = eV
λ( Å)

λ0 = 12400
= 4960 Å
2.5

So λ = 4000 Å may be detected

(30) Answer : (1)

Solution:
Answer (A)

(31) Answer : (2)

Hint:
Mass action law ne nh = ni2
Solution:
ne .nh = ni 2
2
n
i
ne =
nh

2
16
(2× 10 ) 32
4×10
ne = =
22 22
4×10 4×10

ne = 1010 m–3

(32) Answer : (3)

Hint:
Half wave rectifier output current.
Solution:

vm for diode
210√2 –
vm = = 21√2V
10

vm 21√2
As Im =
RF + RL
=
70

3√2
=
10

3√2 3
= = A
5×2 5√2

(33) Answer : (4)

Solution:
Truth table of given circuit
ABY
0 0 1
 1 0 1
0 1 1
1 1 0
The given truth table is for NAND gate.

(34) Answer : (1)

Hint:
Use equivalent circuit of Silicon diode.
Solution:
(4−0.7)V
i = = 1.65 mA
​
2 kΩ

(35) Answer : (4)

Solution:
(25 – 12)

Current through 1 kΩ, i = 3

= 13 mA
1 × 10

Current in 2 kΩ, 12

3
= 6 mA
2 × 10

Current through Zener, i2 = i – i1

i2 = 13 – 6 = 7 mA

(36) Answer : (1)

Hint:
Diode D1 is reversed biased and diode D2 is forward biased.
Solution:
Current will flow through diode D2 only i.e. through 40 Ω resistor.
current = 4
= 0.1 A
40

(37) Answer : (4)

Hint:
Inet = Idiffusion – Idrift
Solution:
In open circuit, net current is zero. Small value of diffusion current and potential barrier may increase or decrease
depends on biasing.

(38) Answer : (4)

Hint:
Truth table of given circuit
Solution:
A B Y
0 0 1
1 0 1
0 1 1
1 1 0
The given truth table is for NAND gate.
(39) Answer : (3)
Solution:
Intrinsic semiconductor has conductivity due to breaking of covalent bond only.
Extrinsic semiconductor has conductivity due to breaking of covalent bond and excess of charges carries due to
impurity.
(40) Answer : (3)
Hint:
In reverse bias mode, diode behaves as an open circuit.
Solution:

20
I =
10

=2A

(41) Answer : (1)

 Solution:
Potential drop in D2 = 0.7 V

Current in 3.5 kΩ
0.7
= = 0.2 mA
3
3.5×10

(42) Answer : (2)

Hint:
In a semiconductor, 2
n
i
= ne nh

Solution:
′ ′
ne nh = n en h

1.5 × 1016 × 1.5 × 1016 = ne' × 4.5 × 1022

32
1.5 × 1.5 × 10
′
n e =
22
4.5 × 10

n
′
e = 5 × 10
9
per m3

(43) Answer : (4)

Hint:
If diode is in forward biased condition. Then it act as short. If diode is in reverse bias condition. It will act as open.
Solution:

(44) Answer : (2)

Hint:
On reverse biasing, diode behaves like open circuit.
Solution:
Circuit completed through Ge diode
(Vout)1 = 10 – 0.3 = 9.7 volt

When Ge diode is reversed biased, Si will be forward biased.

(Vout)2 = 10–0.7 = 9.3 volt
(ΔV) = (Vout)1 – (Vout)2 = 9.7 – 9.3 = 0.4 volt.

(45) Answer : (1)

Hint:
Y = A+B .
¯¯¯¯¯¯¯¯¯

Solution:
¯¯¯¯¯¯¯¯¯ ¯¯
¯ ¯¯
¯
Y = A+B = A ⋅B
(46) Answer : (2)
Hint:
Voltage across Zener diode is equal to voltage across 1 kΩ resistance.
Solution:
Breakdown voltage of Zener diode = 10 V
Voltage drop across 250 Ω = 10 V
Current through dropping resistance =
V

R
=
10

250
= 40 mA
Current through 1 kΩ resistance =
10

1000
= 10 mA
Current through Zener diode = 40 – 10 = 30 mA
(47) Answer : (4)
Hint:
Avalanche breakdown in PN junction diode is due to cumulative effect of increased electron collision and creation of
added electron hole pair.
Solution:
Avalanche breakdown in PN junction diode is due to cumulative effect of increased electron collision and creation of
added electron hole pair.
(48) Answer : (3)
Hint:
To detect light, energy of light should be greater than band gap.
Solution:
12375 12375
E = = ≃ 2.47 eV
λ( Å) 5000

So D1 and D2 will be detected.

(49) Answer : (2)

Hint:
Electric field in depletion layer is form n-side to p-side, so when an electron enter from n to p side it will decelerate
Solution:
Electric field in depletion layer
E= V
= = 3 × 105
0.3

–6
N

d 1×10 C

Retardation of electron
–19 5
1.6 × 10 × 3 × 10
16
= = 5.3 × 10
–31
9.1 × 10

v2 = 25 × 1010 – 10.6 × 1010

v = 3.8 × 105 m/s

(50) Answer : (4)

Solution:
In full wave rectifier
∴ Ripple frequency = 2 × frequency of A.C.
(51) Answer : (2)
Solution:
Energy gap of GaAs0.6P0.4 is 1.9 eV and emits red colour.

(52) Answer : (2)

Solution:
V0 10
VDC =
π
=
π
V

(53) Answer : (2)

Hint:
Use KVL and voltage divider rule.
Solution:
Since voltage across Zener diode is 7 V.
Hence current in 6 Ω resistance is i = = 1.3 A
20–7

10

Voltage across 6 Ω resistance = 1.3 × 6 = 7.8 V

(54) Answer : (4)

Hint:
Use Boolean algebra
Solution:
 ¯¯¯¯¯¯¯¯¯¯
¯¯
¯ ¯¯
¯
Y = A + B = AB

It is AND gate