BANGALORE SAHODAYA SCHOOLS COMPLEX ASSOCIATION

PRE-BOARD EXAMINATION (2024-2025)

Class: XII PHYSICS Date: 18.12.2024

Time: 3 Hours (042) -SET 1 MARKING SCHEME Marks: 70 Marks

SECTION A

1) (D) 𝑞1 × 𝑞2 < 0 1 Mark

2) (C) Φ𝐸1 : Φ𝐸2 = 1: 4 1 Mark

3) (B) its orbital period remains unchanged. 1 Mark

4) (C) χ𝐵 = −1 1 Mark

5) (A) Eddy loss 1 Mark

6) (D) Microwaves 1 Mark

7) (A) δ𝑚𝑖𝑛 = 30𝑜 ; 𝑛 = √2 1 Mark

8) (C) 𝐼𝑚𝑎𝑥 : 𝐼𝑚𝑖𝑛 = 9: 1 1 Mark

9) (B) Its width increases if the slit width decreases 1 Mark

10) (B) λ𝑑𝐵 ∝ 1/√𝑉 1 Mark

11) (A) Δ𝐿 = −2ℏ 1 Mark

12) (C) 𝑓ℎ𝑤 = 50 𝐻𝑧; 𝑓𝑓𝑤 = 100 𝐻𝑧 1 Mark

ASSERTION-REASON

13) (B) Both A and R are true but R does not explain A 1 Mark

14) (A) Both A and R are true and R is the correct explanation of A 1 Mark

15) (D) A is false but R is true. 1 Mark

16) (A) A and R are true and R is the correct explanation of A 1 Mark

SECTION B
Gauss’ Law:
λ𝐿
𝐸 (𝑟) × 2π𝑟𝐿 =
ϵ0
17) λ λ λ
𝐸 (𝑟 ) = = 2𝑘 ; 𝐹 (𝑟) = 𝑞0 𝐸 (𝑟) = 2𝑘𝑞0
1 Mark
2πϵ0 𝑟 𝑟 𝑟
 2 × (9.0 × 109 𝑁𝑚2 . 𝐶 −2 ) × (13 × 10−6 𝐶. 𝑚−1 )(10 × 10−9 𝐶 )
𝐹 (𝑟 ) =
(9 × 10−2 𝑚) 1 Mark
= 26 𝑚𝐶

CHOICE 1:
• Identifying that 𝐹⃗𝐵 ⊥ 𝑣⃗ ⟹ 𝐹⃗𝐵 ⊥ 𝑑𝑟 ⃗⃗⃗⃗⃗ 1 Mark
𝐹⃗𝐵 = 𝑞𝑣⃗ × 𝐵⃗⃗ ⟹ 𝐹⃗𝐵 ⊥ 𝑣⃗
• A force that is perpendicular to displacement does no work and hence
1 Mark
the kinetic energy does not change.
Δ𝐾 = 𝑊𝐵 = 𝐹⃗𝐵 . ⃗⃗⃗⃗⃗
𝑑𝑟 = 0

18) CHOICE 2: 1 Mark

ξ𝑖𝑛𝑑 1 𝑑Φ𝐵
Φ𝐵 (𝑡 ) = 𝐵𝐴 = μ0 𝑛𝐼 (𝑡 )𝐴; ⟹ 𝐼𝑖𝑛𝑑 = =
𝑅 𝑅 𝑑𝑡
μ0 𝑛𝑎2 𝑑𝐼
𝐼𝑖𝑛𝑑 =
𝑅 𝑑𝑡
(4π × 10−7 𝑇𝑚𝐴−1 )(2000)(2.0 × 10−2 𝑚)2
= −3
× (10 𝐴. 𝑠 −1 )
3.2 × 10 Ω 1 Mark

𝐼𝑖𝑛𝑑 = 𝜋 𝑚𝐴

3/2 2 1
𝑃1 = 𝑃3 = ( − 1) = ; 𝑓1 = 𝑓3 = 𝑅 = 30 𝑐𝑚
1 𝑅 𝑅 ½ Mark
4/3 −2 2 3 3
𝑃2 = ( ) =− ; 𝑓2 = − 𝑅 = − 𝑓1 ½ Mark
19) 1 𝑅 3𝑅 2 2
2 2 4
𝑃 = 𝑃1 + 𝑃2 + 𝑃3 = 2𝑃1 + 𝑃2 = − = ½ Mark
𝑅 3𝑅 3𝑅
3𝑅 3𝑓1
𝑓= = = 22.5 𝑐𝑚 ½ Mark
4 4

(a) Limitations of Bohr Atom Model:

o Cannot be extended beyond hydrogen-like atoms (multiple
electron systems)
½ Mark
o Cannot explain the hyperfine splitting of emission line spectra.
½ Mark
(b) Bohr’s Third Postulate: Electrons can undergo transition from one
stationary orbit to another by emitting/absorbing a light quantum of
20) energy equal to the energy difference between these orbits.
½ Mark
𝐸0 𝐸0 1 1 ½ Mark
𝐸𝑚 = − ; 𝐸𝑛 = − ; 𝐸𝑚𝑛 = 𝐸𝑛 − 𝐸𝑚 = 𝐸0 ( − )
𝑚2 𝑛2 𝑚 2 𝑛2
ℎ𝑐 1 𝐸0 1 1
𝐸𝑚𝑛 = ; = ( 2 − 2)
λ𝑚𝑛 λ𝑚𝑛 ℎ𝑐 𝑚 𝑛
 (a) Energy Band diagram of an intrinsic semiconductor (𝑇 > 0 𝐾):

1 Mark

(b) Energy Band diagram of a P type semiconductor (𝑇 > 0 𝐾):

21)

1 Mark

SECTION C
• Saturation charge on the 2 𝜇𝐹 capacitor:
𝑄 = 𝐶2 𝑉2 = (2.0 μ𝐹 ) × (500 𝑉 ) = 1000 𝜇𝐶 ½ Mark
• Charge conservation: 𝑄 = 𝑄2 + 𝑄8
𝑄 𝑄
• Charge redistribution: 𝑉2 = 𝑉8 ⟹ 𝐶2 = 𝐶8
2 8
𝐶8 8 μ𝐹
𝑄8 = 𝑄2 = ( ) 𝑄 = 4𝑄2
𝐶2 2 μ𝐹 2 ½ Mark
𝑄 4𝑄
𝑄2 = = 200 μ𝐶; 𝑄8 = = 800 μ𝐶
5 5
22)
• Energy redistribution: Δ𝑈 = 𝑈𝑓 − 𝑈1
𝑄2 (1000 × 10−6 𝐶 )2 ½ Mark
𝑈𝑖 = = = 250 𝑚𝐽
2𝐶2 2 × 2.0 × 10−6 𝐹

𝑄22 𝑄82 (200 × 10−6 𝐶 )2 (800 × 10−6 𝐶 )2

𝑈𝑓 = + = + 1 Mark
2𝐶2 2𝐶8 2 × (2.0 × 10−6 𝐹 ) 2 × (8.0 × 10−6 𝐹 )

𝑈𝑓 = 10 𝑚𝐽 + 40 𝑚𝐽 = 50 𝑚𝐽
Δ𝑈 = 50 𝑚𝐽 − 250 𝑚𝐽 = −200 𝑚𝐽 ½ Mark
 Δ𝑈
× 100% = −80%
𝑈𝑖

(a) Mobility: The drift speed of a charge carrier is proportional to the

applied electric field strength.
𝑣𝑑 1 Mark
𝑣𝑑 ∝ 𝐸; 𝑣𝑑 = μ𝐸; μ=
𝐸
• Mobility of a charge carrier is defined as the drift speed attained per
unit electric field strength.
[𝑣𝑑 ] = 𝑚𝑠 −1 ; [𝐸 ] = 𝑉. 𝑚−1
𝑚𝑠 −1 ½ Mark
23) • The SI unit of mobility is [μ] = 𝑉.𝑚−1 = 𝑚 𝑠 𝑉
2 −1 −1

𝑒τ 1
(b) μ = ; μ∝𝑚
𝑚

μ𝐶𝑙 𝑚𝑁𝑎 27 ½ Mark

= = ;
μ𝑁𝑎 𝑚𝐶𝑙 35
27
μ𝐶𝑙 = ( ) (70 × 10−6 𝑚𝑠 −1 ) = 54 × 10−6 𝑚𝑠 −1
35 1 Mark
𝑉𝑚
(a) Impedance Calculation: 𝑉𝑚 = 𝑍𝐼𝑚 ⟹ 𝑍= 𝐼𝑚
𝑉𝐿𝑚 = √2𝑉𝐿𝑟𝑚𝑠 = √2 × 40 𝑉; 𝑉𝐶𝑚 = √2𝑉𝐶𝑟𝑚𝑠 = √2 × 10 𝑉
𝑉𝑅𝑚 = √2𝑉𝑅𝑟𝑚𝑠 = √2 × 40 𝑉 ½ Mark
2
𝑉𝑚 = √𝑉𝑅𝑚 + (𝑉𝐿𝑚 − 𝑉𝐶𝑚 )2
= √2 × √(40 𝑉 )2 + (40 𝑉 − 10 𝑉 )2 = √2 × 50 𝑉 ½ Mark
𝑉𝑚 √2 × 50 𝑉
𝑍= = = 5.0 Ω
24) 𝐼𝑚 √2 × 10 𝐴 ½ Mark

(b) 𝑃̅ = 𝑉𝑟𝑚𝑠 𝐼𝑟𝑚𝑠 𝑐𝑜𝑠 𝜙

𝑉𝑚 𝐼𝑚 ½ Mark
𝑉𝑟𝑚𝑠 = = 50 𝑉; 𝐼𝑟𝑚𝑠 = = 10 𝐴
√2 √2
𝑉𝑅𝑚 √2 × 40 𝑉 4
𝑐𝑜𝑠 ϕ = = = ½ Mark
𝑉𝑚 √2 × 50 𝑉 5
4
𝑃̅ = (50 𝑉 )(10 𝐴) = 400 𝑊
5 ½ Mark

(a) Displacement Current: In the modified Maxwell-Ampere’s Law,

a second mechanism to generate magnetic field is identified as a time
varying electric flux and accommodated. ½ Mark
25) 𝑑Φ
The quantity ϵ0 𝑑𝑡𝐸 has the same dimension as conduction current and
produces a magnetic field like a conduction current would. So, it is
called displacement current.
 𝑑Φ𝐸
𝑖𝑑 = ϵ0
𝑑𝑡
⃗⃗. ⃗⃗⃗⃗⃗
∮𝐵 𝑑𝑟 = μ0 (𝑖𝑐 + 𝑖𝑑 )
½ Mark

(b) To show that displacement current between the capacitor plates

during the charging is equal to the drift current through the connecting
wire -
Consider the charging of a
capacitor. During the charging,
the charge stored on the plates
𝑞 (𝑡 ) varies with time as charge
flows from the battery to the
plate. As a result, the electric
flux across the plate Φ𝐸 , also
varies with time.

𝑑𝑞
The conduction current is: 𝑖𝑐 = 𝑑𝑡

𝑑Φ𝐸 ½ Mark
The displacement current is: 𝑖𝑑 = ϵ0 𝑑𝑡

As the charge on the plate varies with time, so does the electric field
across the plates. Suppose if the voltage across the plate is 𝑣 (𝑡 ), the plate ½ Mark
area 𝐴 and the plates separation distance 𝑑, 𝑡ℎ𝑒𝑛
𝑞 (𝑡 ) ϵ0 𝐴
𝐶= =
𝑣(𝑡 ) 𝑑
ϵ0 𝐴 𝑣(𝑡 )
𝑞 (𝑡 ) = ( ) 𝑣(𝑡 ) = ϵ0 𝐴 = ϵ0 𝐴𝐸 (𝑡 ) = ϵ0 Φ𝐸 (𝑡 )
𝑑 𝑑 ½ Mark
Differentiating both sides with respect to ‘time’
𝑑𝑞 𝑑Φ𝐸 ½ Mark
= ϵ0 ⟹ 𝑖𝑐 = 𝑖𝑑
𝑑𝑡 𝑑𝑡

For compound microscope 𝑓𝑜 < 𝑓𝑒 . Therefore,

𝑓𝑜 = 0.5 𝑐𝑚; 𝑓𝑒 = 25 𝑐𝑚
𝑢𝑜 = −0.75 𝑐𝑚

(a) Magnifying Power: 𝑀 = 𝑚𝑜 𝑀𝑒

𝑓𝑜 0.5 𝑐𝑚 ½ Mark
𝑚𝑜 = − ( ) = −( ) = −2 1 Mark
26) |𝑢𝑜 | − 𝑓𝑜 0.75 𝑐𝑚 − 0.5 𝑐𝑚
𝐷 25 𝑐𝑚
𝑀𝑒∞ = 𝑓 = 5.0 𝑐𝑚 = +5 (For relaxed vision/normal adjustment)
𝑒
½ Mark
𝑀 = 𝑚𝑜 𝑀𝑒 = (−2) × (+5) = −10
 (b) Angular size of Amoeba’s Image: ½ Mark
ℎ𝑜 0.25 𝑚𝑚
𝑡𝑎𝑛 α = = = 0.001
𝐷 25 𝑐𝑚
𝑡𝑎𝑛 α = 0.001 ≪ 0.2 (Small Angle Approximation is valid) ½ Mark

𝑡𝑎𝑛 β
𝑀= ; tan β = M tan 𝛼 = −10 × 0.001 = 0.01
𝑡𝑎𝑛 α
𝑡𝑎𝑛 β = 0.01 ≪ 0.2 (Small Angle Approximation is valid)

Therefore, the angular size of Amoeba’s image is:

180𝑜
β ≃ 𝑡𝑎𝑛 β = 0.01 𝑟𝑎𝑑 = 0.01 × = 0.57𝑜
π
which is nearly the angular size of full moon on the sky.

(a) Calculate the photon energy

ℎ𝑐 1240 𝑒𝑉 − 𝑛𝑚
𝐸ν = ℎν = = = 3.10 𝑒𝑉
λ 400 𝑛𝑚 1 Mark
This photon energy of 3.1 𝑒𝑉 is greater than the work functions of
cesium (2.10 𝑒𝑉), sodium (2.30 𝑒𝑉) and lithium (2.50 𝑒𝑉). So, these
targets will show photoelectric effect.

(b) Stopping potential for sodium:

27) 1 Mark
𝐾𝑚𝑎𝑥 = 𝐸ν − ϕ0 = 3.10 𝑒𝑉 − 2.30 𝑒𝑉 = 0.8 𝑒𝑉
𝐾𝑚𝑎𝑥 0.8 𝑒𝑉
𝐾𝑚𝑎𝑥 = 𝑒𝑉0 ; 𝑉0 = = = 0.8 𝑉
𝑒 𝑒

(c) Threshold wavelength for photo-emission in gold:

ℎ𝑐 ℎ𝑐 1240 𝑒𝑉 − 𝑛𝑚 1 Mark
ϕ0 = ℎν0 = ; λ0 = = = 248 𝑛𝑚
λ0 ϕ0 5.00 𝑒𝑉

(a) Working of a full wave rectifier:

• During one half of the cycle, the diode (D1) is forward biased and
the diode (D2) is reverse biased. So, current flows through D1.
• During the other half of the cycle the diode D2 is forward biased and
D1 is reverse biased. So, the current flows through D2. 1 Mark
• Both the times the current flows from X to Y through the load.

28)
 1 Marks

(b) Output of a Full wave Rectifier with filter:

• The rectified voltage is in the form of half sinusoid pulses. Though
the current is unidirectional its value is not a constant.
• To get a steady DC output, a capacitor of large capacitance is
connected across the outputs, to filter out the AC ripples.

1 Mark
 SECTION D
I. (D) τ = 𝑁𝐼𝐴𝐵.
II. (B) Deflection produced per unit current.
III. (C) 𝑆𝐼 = 𝑁𝐴𝐵/ κ.
29)
IV. (A) [𝑆𝐼 ] = 𝑟𝑎𝑑. 𝐴−1
(OR)
(C) 𝑆𝐼 is independent of the current through the coil
I. (A) 6.0 𝑓𝑚
II. (B) 2.2 × 1017 𝑘𝑔. 𝑚−3
III. (C) Isobars
30) IV. (B) 146𝐶 and 147𝑁
(OR)
(B) 136𝐶 and 147𝑁

SECTION E
CHOICE 1
(a) Capacitance of a capacitor is the charge stored in its plates for a unit
potential difference across them. 1 Mark
−1
SI unit of capacitance is 𝐶. 𝑉 = 𝐹
(b) (i) It gets reduced to half its value; (ii) No change 1 Mark
ϵ0 𝐴 1 𝐴
(c) 𝐶0 = 𝑑 = 4π𝑘 𝑑
2 Marks
1 π × (60 × 10−2 𝑚)2
= 9 2 −2 −3
= 10−8 𝐹
(
4π × 9 × 10 𝑁𝑚 𝐶 ) 10 𝑚
= 10 𝑛𝐹
(d) 𝑄0 = 𝐶0 𝑉0 ; 𝑄 = 𝐶𝑉0 = κ𝐶0 𝑉0
𝑄 − 𝑄0 = (κ − 1)𝐶0 𝑉0 = (5 − 1) × (10 𝑛𝐹 × 12 𝑉 ) = 480 𝑛𝐶 1 Mark

CHOICE 2
(a) As the temperature increases, the relaxation time between collisions
31) also decrease. Resistivity of metals are inversely proportional to the ½ Mark
relaxation time (τ). So, the resistivity of metals increases with
temperature.
1
𝜌∝ 2
𝑛𝑒 τ
In the case of semiconductors, 𝑛𝑒 increases with temperature much ½ Mark
faster than the decrease in 𝜏, because of the thermally generated
electron-hole pairs. So, the resistivity of semiconductors decrease
with temperature.

1 1 −1 1 ½ mark
(b) 𝑟𝑝 = (0.1 Ω + 0.2 Ω) = 15 Ω
𝜀𝑝 𝜀1 𝜀2
= + = 30 𝐴 + 10 𝐴 = 40 𝐴
𝑟𝑝 𝑟1 𝑟2 1+1/2
𝜀𝑝 40 8 Marks
𝜀𝑝 = ( ) 𝑟𝑝 = 𝑉 = 𝑉 = 2.66 𝑉
𝑟𝑝 15 3
 (c) 𝑉𝑡 (𝐼 ) = 𝜀 − 𝑟𝐼; 𝜀 = 𝑉𝑡 (𝐼 = 0) = 2.6 𝑉 1 Mark
Δ𝑉𝑡 (0.0 𝑉 ) − (2.6 𝑉 )
𝑟=− =− = 0.2 Ω 1 Mark
Δ𝐼 (13 𝐴) − (0.0 𝐴)

CHOICE 1:
(a) Refer to Section 4.6 of the NCERT Textbook (2024-25 edition) 1 Mark
(b) Refer to Section 4.7 of the NCERT Textbook (2-24-25 edition) 2 Marks
μ 𝐼𝐼 μ 𝐼𝐼
(c) 𝑓⃗1 = 0 1 𝑥̂; 𝑓⃗2 = 0 2 (−𝑥̂ )
2π𝑟1 2π𝑟2
μ0 𝐼 𝐼1 𝐼2
𝑓⃗ = 𝑓⃗1 + 𝑓⃗2 = [ − ] 𝑥̂
2π 𝑟1 𝑟2 1 Mark
(4π × 10−7 𝑇𝑚. 𝐴−1 )(10 𝐴) 30 𝐴 20 𝐴
𝑓⃗ = ( )[ − ] 𝑥̂
2π 3.0 × 10−2 𝑚 5.0 × 10−2 𝑚
𝑓⃗ = +1.2 𝑚𝑁. 𝑚−1 𝑥̂
1 Mark
−1
The force per unit length is 1.2 𝑚𝑁. 𝑚 to the right.

CHOICE 2:
(a) [i] Consider a slice of the rod of thickness 𝑑𝑟 at a distance 𝑟 from the
axis of rotation. A charge in the slice will experience opposing
electric and magnetic fields.
When equilibrium is attained,
𝑑𝑉
𝐹𝐸 = 𝐹𝐵 ⟹ 𝑞 = 𝑞𝑣𝐵 = 𝑞 (𝑟ω)𝐵
𝑑𝑟
32) Integrating both sides taking appropriate limits,
𝑉𝐵 𝐿 [1 Mark]
1 2
∫ 𝑑𝑉 = ω𝐵 ∫ 𝑟 𝑑𝑟 ⟹ ξ𝑖𝑛𝑑 = 𝐵ω𝐿
𝑉𝐴 0 2
1
ω = 120 𝑟𝑝𝑚 = 4π 𝑟𝑎𝑑. 𝑠 −1 ; 𝐿 = 50 𝑐𝑚 = 𝑚; 𝐵 = 15 𝑇
2
2
1 −1
1 15π [1 Mark]
ξ𝑖𝑛𝑑 = (15 𝑇 )(4π 𝑟𝑎𝑑. 𝑠 ) ( 𝑚) = 𝑉
2 2 2

[ii] To find the polarity of the ends, let us choose the perspective from
above, with the coordinate origin at the hinged end.
𝐵̂ = 𝑦̂; 𝑣̂ = −𝑧̂ ; 𝐹̂𝐵 = 𝑣̂ × 𝐵̂ = −𝑧̂ × 𝑦̂ = 𝑥̂ [1 Mark]
So the positive charges will be pushed to the free end and the
negatively charged free electrons will be pushed to the hinged end.
So the free end is at higher potential and the hinged end at the lower
potential.
 (b) Understand that the integral of a function is the area under the
function withing the specified interval.
ξ𝑖𝑛𝑑 1 𝑑Φ𝐵
𝑖 (𝑡 ) = = ; 𝑑Φ𝐵 = 𝑅𝑖(𝑡 )𝑑𝑡 [1 Mark]
𝑅 𝑅 𝑑𝑡
Φ𝐵 τ
∫ 𝑑Φ𝐵 = 𝑅 ∫ 𝑖(𝑡 )𝑑𝑡
0 0
Φ𝐵 = 𝑅 × (Area under 𝑖(𝑡 ) – 𝑡 graph)
1
Φ𝐵 = (10 Ω) × [ (4.0 𝐴)(0.1 𝑠)] = 2.0 𝑊𝑏 [1 Mark]
2
CHOICE 1:
(a) Conditions for the occurrence of TIR:
o The light ray should be travelling from optically denser
medium to optically rarer medium. [1 Mark]
o The angle of incidence must be greater than the critical angle
for the media pair.
(b) Critical Angle:
𝑛𝑟 2/√3 √3
θ𝑐 = 𝑠𝑖𝑛−1 ( ) = 𝑠𝑖𝑛−1 ( ) = 𝑠𝑖𝑛−1 ( ) = 60𝑜 [1 Mark]
𝑛𝑑 4/3 2
(c) Applying Snell’s law at the point of incidence:
1 × 𝑠𝑖𝑛(θ) = √2 𝑠𝑖𝑛(𝑟1 )
For triangular prism,
𝑟1 + 𝑟2 = 𝐴; 𝑟2 = 𝐴 − 𝑟1
Condition that TIR does not occur at the other surface is: 𝑟2 < θ𝑐
1
𝑟2 < 𝑠𝑖𝑛−1 ( ) = 45𝑜 ; 𝐴 − 𝑟1 < 45𝑜
√2

𝑟1 > 60𝑜 − 45𝑜 = 15𝑜

33) 𝑠𝑖𝑛 θ
𝑠𝑖𝑛 𝑟1 > 𝑠𝑖𝑛 15𝑜 ; > 𝑠𝑖𝑛15𝑜
√2
𝑜
𝑠𝑖𝑛 𝜃 > √2 𝑠𝑖𝑛 15
√3 − 1
𝑠𝑖𝑛 15𝑜 = 𝑠𝑖𝑛(60𝑜 − 45𝑜 ) =
2√2
√3 − 1
θ > 𝑠𝑖𝑛−1 ( )
2
CHOICE2:
(a) Plane Wavefront passing through a convex lens:
(b) Young’s Double Slit:
𝐵𝐹
λ𝐷 1 λ𝐷
𝑦𝑚 = 𝑚( ); 𝑦𝑛𝐷𝐹 = (𝑛 − ) ( )
𝑑 2 𝑑
3 λ𝐷 9λ𝐷
Δ𝑦 = 𝑦3𝐵𝐹 + 𝑦2𝐷𝐹 = (3 + ) ( ) =
2 2 2𝑑
9 × (500 × 10−9 𝑚)(0.5 𝑚)
Δ𝑦 = = 2.25 𝑚𝑚
2 × (5 × 10−4 𝑚)

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