Electronic Devices and Circuits

(EL-1004)
LABORATORY MANUAL
FALL 2023

(LAB # 03)
Analysis and Implementation of Characteristics of
Diode
Engr. Kashif Ullah

Student Name: ___________________________

Roll No: _____________ Section: ___________

______________________________________________________________________________________________________________________________________________________
Date performed:
NATIONAL _____________________,
UNIVERSITY OF COMPUTER AND 2023
EMERGING SCIENCES, ISLAMABAD

Manual
Prepared by:Submission Date: ______________,
Engr. Naveed 2023
Iqbal, Engr. Maria Nasir Version: 2.14
Last Edited by: Engr. Kashif Ullah Updated: Fall 2023
Verified by: Dr. Awais Ayub
_______________________________
LAB ENGINEER SIGNATURE & DATE
 Electronic Devices National University Roll No: __________
& Circuits of Computer and Emerging Sciences
03

Lab
(EL-1004) Islamabad

#
_________________________________________________________________________________

MARKS AWARDED: /10

LAB 03 Analysis and Implementation of Characteristics of
: Diode
Objectives:
1. To construct and analyze I-V characteristics of diode and draw its graph.
2. To construct and analyze basic logic gates (AND, OR) using diodes.
Equipment required:
 DC power supply (variable)
 Multi-meter (DMM)
 Resistor 1kohm
 IN 4007 (diode)
 Bread Board
Theory:
Doping:
The process of adding impurities in the pure semiconductor material is called doping.
Extrinsic Materials:
Those materials, which are subjected to the doping process, are called extrinsic materials. There are
two types of extrinsic materials, i.e. n-type & p-type materials. In the n-type material, the majority
carriers are the electrons while in p-type material, the majority carriers are the holes.
Semiconductor Diode:
When n-type and p-type semiconductors are combined, a p-n junction diode is formed. At the point of
adjoin of the two layers, some of the electrons and holes are combined. Since n-type donate electrons
and p-type accepts electrons, so negative ions are formed at p-side and positive ions are at n-side as
shown in figure 2.1.
(Barrier Potential = 0.7V for Si, 0.3V for Ge)

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Fig-2.1: PN-junction diode

Forward Bias:
When the positive terminal of the battery is connected to the P-side and the negative terminal is
connected to the N-side of the diode, then the diode is in the forward bias. In forward bias the diode
does not conduct until the breakdown occurs. At a certain voltage the majority carriers get sufficient
energy to pass the junction. This voltage is called breakdown voltage and if the applied voltage is
increased beyond the voltage, a large current flows through the diode. In the reverse bias the
breakdown occurs at high voltages.
Reverse Bias:
When the positive terminal of the battery is connected to the n-side and negative terminal is connected
to the p-side, then the diode is in reverse bias. In this condition the diode does not conduct and there is
no current due to majority carriers, because the depletion layer widens with the reverse bias. The
positive ions on the n-side is repelled by the positive terminal and the negative ions in the P-side are
repel by the negative terminal of the battery, so the depletion region widens.
In reverse bias, there is reverse saturation current due to the minority carriers which is very
small. The minority carriers that found themselves in the depletion region passes it and thus a small
reverse saturation current denoted by flows in the reverse direction.
The diode is a device formed from a junction of n-type and p-type semiconductor material. The I-V
characteristic curve of diode is shown below.

Fig-2.2: Characteristic Curve of PN-junction diode

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Symbol of a diode:
The lead connected to the p-type material is called anode and the lead connected to n-type material is
called cathode. In general, the cathode of a diode is marked by a solid line on diode.

Fig-2.3: Leads Indication of diode

When analyzing circuits, the real diode is usually replaced with a simple model. In the simplest form,
the diode is modeled by a switch (shown in figure 2.4).the switch is closed when the diode is forward
biased and open when the diode is reversed biased.

Open switch: Close switch:

Reverse biased Forward biased

Fig-2.4: Model of diode

Testing a diode:
Digital multimeters can test diodes using one of two methods:
1. Diode Test mode: almost always the best approach.
2. Resistance mode: typically used only if a multimeter is not equipped with a Diode Test mode.
Note: In some cases it may be necessary to remove one end of the diode from the circuit in order to
test the diode.
1. Diode Test mode:
A diode is best tested by measuring the voltage drop across the diode when it is forward-
biased. A forward-biased diode acts as a closed switch, permitting current to flow.
A multimeter’s Diode Test mode produces a small voltage between test leads. The multimeter
then displays the voltage drop when the test leads are connected across a diode when forward-
biased. The Diode Test procedure is conducted as follows:
i. Make certain a) all power to the circuit is OFF and b) no voltage exists at the diode.
Voltage may be present in the circuit due to charged capacitors. If so, the capacitors need to
be discharged. Set the multimeter to measure ac or dc voltage as required.
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ii. Turn the dial (rotary switch) to Diode Test mode ( ) It may share a space on the dial
with another function.
iii. Connect the test leads to the diode. Record the measurement displayed.
iv. Reverse the test leads. Record the measurement displayed.
Diode Test Analysis:
i. A good forward-based diode displays a voltage drop ranging from 0.5 to 0.8 volts for the most
commonly used silicon diodes. Some germanium diodes have a voltage drop ranging from 0.2 to
0.3 V.
ii. The multimeter displays OL when a good diode is reverse-biased. The OL reading indicates the
diode is functioning as an open switch.
iii. A bad (opened) diode does not allow current to flow in either direction. A multimeter will
display OL in both directions when the diode is opened.
iv. A shorted diode has the same voltage drop reading (approximately 0.4V) in both directions

Fig 2.5: Diode test mode

2. Resistance Test mode:
A multimeter set to the Resistance mode (Ω) can be used as an additional diode test or, as
mentioned previously, if a multimeter does not include the Diode Test mode.
i. The forward-biased resistance of a good diode should range from 1000 Ω to 10 MΩ.
The resistance measurement is high when the diode is forward-biased because current from
the multimeter flows through the diode, causing the high-resistance measurement required
for testing.
ii. The reverse-biased resistance of a good diode
displays OL on a multimeter. The diode is bad
if readings are the same in both directions.

Things to know about the Resistance mode when testing diodes:

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i. Does not always indicate whether a diode is good or bad.

ii. Should not be taken when a diode is connected in a circuit since it can produce a false
reading.
iii. Can be used to verify a diode is bad in a specific application after a Diode Test indicates
a diode is bad.
Precautions:
 Do not use current meter in parallel.
 Always break the circuit while measuring current.
 Do not use volt meter in series.
 Before applying to the circuit measured the voltages of source.
LAB TASKS
Task 1:
Connect the diode in the forward and reverse biased configurations in diode test mode(Fig 2.5). Note
the voltages and check whether the diode is faulty one or not.
a) Voltage of diode in forward biased configuration: ______________________________.
b) Voltage of diode in reverse biased configuration: _______________________________.
Connect the diode in the forward and reverse biased configurations in resistance test mode.
Note the resistances and check whether the diode is faulty one or not.
a) Resistance of diode in forward biased configuration: ______________________________.
b) Resistance of diode in reverse biased configuration: _______________________________.
Task 2:
Construct the circuits as shown below in Fig 2.6. Vary the input voltage Vin according the values
given in the table and by using ampere meter and volt meter record the values of Id and Vd.
+ Vd -
+ Vd -

R= R = 1kΩ
1kΩ

Fig 2.6: a) Diode in Forward

biased configuration. b)
Diode in Reversed biased configuration

Vin Forward Biased Reverse Biased

(V) Vd (V) Id (mA) Slope (Id/Vd) Vd (V) Id(uA) Slope (Id/Vd)
0.0
0.2
0.4
0.6
0.8
Vin Forward Biased Reverse Biased

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Vd (V) Id (mA) Slope (Id/Vd) Vd (V) Id(uA) Slope (Id/Vd)

(V)
1.0
1.2
1.4
1.8
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
22.0
23.0

Task 3:
Using the data collected in task 2, sketch the IV characteristics of diode. Take Vd along x-axis and Id
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Lab
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_________________________________________________________________________________

along y-axis. For reverse bias condition, both Vd and Id will be negative.

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 Electronic Devices National University Roll No: __________
& Circuits of Computer and Emerging Sciences
03

Lab
(EL-1004) Islamabad

#
_________________________________________________________________________________

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 Electronic Devices National University Roll No: __________
& Circuits of Computer and Emerging Sciences
03

Lab
(EL-1004) Islamabad

#
_________________________________________________________________________________

Lab
Instructor's Signature: ________________________
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