Scribd
Upload
19 views1 page

Tutorial 12 - Problem

Uploaded by

ubhatt
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
19 views1 page

Tutorial 12 - Problem

Uploaded by

ubhatt
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 1

Birla Institute of Technology and Science, Pilani, Rajasthan

Electronic Devices (EEE F214/INSTR F214/ECE F214)


1st Semester (2024-2025)
Date: 18-11-2024 Tutorial-12

1. A MOSFET operating in its linear region which can be used as voltage controlled resistor.
Determine the sensitivity of the resistance on the gate voltage (𝜕𝑅⁄𝜕𝑉 ) at 𝑉𝐺𝑆 = 5 𝑉.
𝐺𝑆
Consider, COX=7×10-4 F/m2, µn=1000 cm2/V-s, W/L=25 and VT= -2.5 V.

2. An n-Channel MOSFET with n+ polysilicon gate has oxide thickness of 10 nm and uniform
substrate doping of 5×1016 cm-3. Interface fixed charge of 5×1010 cm-2. Find the threshold
voltage when body is biased at 0 V and -5 V. (εox=3.9, εs=11.8, ni=1.5×1010 cm-3, Eg=1.12 eV,
ε0=8.85×10-12 F/m).

3. Consider an n-channel MOSFET with uniform channel doping with NA = 3×1017cm-3 and having
an oxide 10 nm thick. Calculate the sub-threshold slope at 300 K.
Assume now that the Si-SiO2 interface is not ideal, but there are interface traps with density Nit
= 1012cm-2/V. What is the sub-threshold slope in this case?

---------

You might also like