DATA SHEET

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MOSFET – P-Channel, VDSS RDS(on) MAX ID MAX

POWERTRENCH®, Specified −20 V 33 mW @ −4.5 V −5.5 A
43 mW @ −2.5 V
1.8 V 60 mW @ −1.8 V

FDC604P D
S

General Description D
This P−Channel 1.8 V specified MOSFET uses onsemi’s low
voltage POWERTRENCH process. It has been optimized for battery G
power management applications. D
D
Features TSOT23 6−Lead
• −5.5 A, −20 V. RDS(ON) = 33 mW @ VGS = −4.5 V (SUPERSOTt−6)
RDS(ON) = 43 mW @ VGS = −2.5 V CASE 419BL
RDS(ON) = 60 mW @ VGS = −1.8 V
• Fast switching speed MARKING DIAGRAM
• High Performance Trench Technology for Extremely Low RDS(ON)
• These Device is Pb−Free and Halogen Free 604M
G G
Applications
1
• Battery Management
• Load Switch 604 = Specific Device Code
• Battery Protection M = Date Code
G = Pb−Free Package

ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted (Note: Microdot may be in either location)
Symbol Parameter Value Unit
VDSS Drain−Source Voltage −20 V
PIN ASSIGNMENT
VGSS Gate−Source Voltage ±8 V

ID Drain Current
− Continuous (Note 1a) −5.5 A 1 6
− Pulsed −20
PD Maximum Power Dissipation 2 5
(Note 1a) 1.6 W
(Note 1b) 0.8
3 4
TJ, TSTG Operating and Storage Junction −55 to +150 _C
Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION
assumed, damage may occur and reliability may be affected.
Device Package Shipping†
THERMAL CHARACTERISTICS TA = 25°C unless otherwise noted
FDC604P TSOT−23−6 3000 /
Symbol Parameter Value Unit (SUPERSOTt−6) Tape & Reel
RθJA Thermal Resistance, 78 °C/W (Pb−Free)
Junction−to−Ambient (Note 1a) †For information on tape and reel specifications,
including part orientation and tape sizes, please
RθJC Thermal Resistance, 30 °C/W refer to our Tape and Reel Packaging Specifica-
Junction−to−Case (Note 1) tions Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2022 1 Publication Order Number:

May, 2022 − Rev. 0 FDC604P/D
 FDC604P

ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
BVDSS Drain−Source Breakdown Voltage VGS = 0 V, ID = −250 mA −20 − − V

DBV DSS Breakdown Voltage Temperature Coefficient ID = −250 mA, Referenced to 25_C − −12 − mV/_C
DT J
IDSS Zero Gate Voltage Drain Current VDS = −16 V, VGS = 0 V − − −1 mA
IGSSF Gate−Body Leakage, Forward VGS = 8 V, VDS = 0 V − − 100 nA
IGSSR Gate−Body Leakage, Reverse VGS = −8 V, VDS = 0 V − − −100 nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = −250 mA −0.4 −0.7 −1.5 V
DV GS(th) Gate Threshold Voltage Temperature Coefficient ID = −250 mA, Referenced to 25_C − 3 − mV/_C
DT J
RDS(on) Static Drain−Source VGS = −4.5 V, ID = −5.5 A − 24 33 mW
On−Resistance VGS = −2.5 V, ID = −4.8 A − 30 43
VGS = −1.8 V, ID = −4.0 A − 42 60
ID(on) On−State Drain Current VGS = −4.5 V, VDS = −5 V −20 − − A
gFS Forward Transconductance VDS = −5 V, ID = −3.5 A − 23 − S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = −10 V, VGS = 0 V, − 1926 − pF
f = 1.0 MHz
Coss Output Capacitance − 530 − pF
Crss Reverse Transfer Capacitance − 185 − pF
SWITCHING CHARACTERISTICS (Note 2)
td(on) Turn−On Delay Time VDD = −10 V, ID = −1 A, − 13 23 ns
VGS = −4.5 V, RGEN = 6 W
tr Turn−On Rise Time − 11 20 ns
td(off) Turn−Off Delay Time − 90 144 ns
tf Turn−Off Fall Time − 45 72 ns
Qg Total Gate Charge VDD = −10 V, ID = −3.5 A, − 19 30 nC
VGS = −4.5 V
Qgs Gate−Source Charge − 4 − nC
Qgd Gate−Drain Charge − 7.5 − nC
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain−Source Diode Forward Current − − −1.3 A
VSD Drain−Source Diode Forward Voltage VGS = 0 V, IS = −1.3 A (Note 2) − −0.7 −1.2 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

NOTES:
1. RθJA is the sum of the junction−to−case and case−to−ambient resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
a) 78°C/W when mounted on a 1in2 pad of 2oz copper on FR−4 board.
b) 156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.

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 FDC604P

TYPICAL CHARACTERISTICS

20 VGS = −4.5 V 3

DRAIN−SOURCE ON−RESISTANCE
VGS = −1.5 V −1.8 V
−2.5 V
−ID, DRAIN CURRENT (A)

−2.0 V 2.5

RDS(ON) NORMALIZED
15

−1.8 V
2
10 −2.0 V

1.5
−2.5 V
5 −1.5 V 1
−4.5 V

0 0.5
0 1 2 3 0 5 10 15 20

−VDS, DRAIN − SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A)

Figure 1. On−Region Characteristics Figure 2. On−Resistance Variation with

Drain Current and Gate Voltage
1.5 0.12
ID = −5.5 A ID = −2.8 A
DRAIN−SOURCE ON−RESISTANCE

1.4
RDS(ON) ON−RESISTANCE (W)
VGS = −4.5 V
RDS(ON), NORMALIZED

1.3 0.09

1.2

1.1 0.06
TA = 125°C
1

0.9 TA = 25°C
0.03
0.8

0.7 0
−50 −25 0 25 50 75 100 125 150 1 2 3 4 5

TJ, JUNCTION TEMPERATURE (°C) −VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On−Resistance Variation with Figure 4. On−Resistance Variation with

Temperature Gate−to−Source Voltage

20 10
VDS = −5 V VGS = 0 V
−IS , RESERVE DRAIN CURRENT (A)

TA = −55°C 25°C
125°C 1 TA = 125°C
−ID, DRAIN CURRENT (A)

15

0.1 25°C
10
0.01
−55°C

5
0.001

0 0.0001
0 0.5 1 1.5 2 2.5 0 0.2 0.4 0.6 0.8 1 1.2

−VGS, GATE TO SOURCE VOLTAGE (V) −VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage

Variation with Source Current and Temperature

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 FDC604P

TYPICAL CHARACTERISTICS (Continued)

5 3500
ID = −5.5 A VDS = −5 V f = 1 MHz
−VGS, GATE−SOURCE VOLTAGE (V)

−10 V 3000 VGS = 0 V

4
2500

CAPACITANCE (pF)
−15 V CISS
3 2000

1500
2
1000
COSS
1
500
CRSS

0 0
0 5 10 15 20 25 0 5 10 15 20
QG,GATE CHARGE (nC) −VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics

100 5
RDS(ON) LIMIT
SINGLE PULSE
100 μs RθJA = 156°C/W
−ID, DRAIN CURRENT (A)

1 ms 4 TA = 25°C
10
10 ms
POWER (W)

100 ms 3
1 1s
2
DC
0.1 VGS = −4.5 V
SINGLE PULSE 1
RθJA = 156°C/W
TA = 25°C
0.01 0
0.1 1 10 100 0.1 1 10 100
−VDS, DRAIN−SOURCE VOLTAGE (V) SINGLE PULSE TIME (s)

Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power
Dissipation
1
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE

D = 0.5

0.2 RqJA(t) = r(t) * RqJA

0.1 RqJA = 156°C/W
0.1
0.05 P(pk)
0.02 t1
0.01 0.01
t2
Single Pulse TJ − TA = P * RqJA (t)
Duty Cycle, D = t1 / t2
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (s)

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

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 FDC604P

POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or
other countries.

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5
 MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TSOT23 6−Lead
CASE 419BL
ISSUE A
1 DATE 31 AUG 2020
SCALE 2:1

GENERIC
MARKING DIAGRAM*

XXX MG
G
1

XXX = Specific Device Code

M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON83292G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TSOT23 6−Lead PAGE 1 OF 1

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