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BJT_Chapter4 Notes Tutorial Questions Final

BJT_Chapter4 Notes Tutorial Questions Final

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0% found this document useful (0 votes)
11 views

BJT_Chapter4 Notes Tutorial Questions Final

BJT_Chapter4 Notes Tutorial Questions Final

Uploaded by

Tebogo Ngobeni
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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ELECTRONICS 1: CHPTER 4 SUMMARY NOTES

Important Formulae:

IC
=
I B …………………1

IC
=
I E …………………2

I E = IC + I B
……………3

IC IC
= IC +
  ………..1 and 2 in 3

  
I C = I E  
  + 1

VC  VRC

VB  VRB

Fixed Bias:

Input Side: Output Side:


VCC = VRB + VBE VCC = VRC + VCE
VCC = I B RB + VBE VCC = I C RC + VCE
VCC − VBE = I B RB VCE = VCC − I C RC
VCC − VBE
IB =
RB

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Emitter Stabilised:

Input Side: Output Side:

VCC = VRB + VBE + VRE VCC = VRC + VCE + VRE


VCC = I B RB + VBE + I E RE VCC = I C RC + VCE + I E RE
VCC − VBE = I B RB + I E RE IC  I E
VCC − VBE = I B RB + I B (  + 1) RE VCE = VCC − I C ( RC + RE )
VCC − VBE
IB =
RB + (  + 1) RE

2
Collector- feedback bias:

Input Side: Output Side:

VCC = VRC + VRB + VBE + VRE VCC = VRC + VCE + VRE


VCC = I C RC + I B RB + VBE + I E RE VCC = I C RC + VCE + I E RE
VCC − VBE = I C RC + I B RB + I E RE IC  I E
I C  I E = I C I C = I B VCE = VCC − I C ( RC + RE )
VCC − VBE = I B RB + I C RC + I C RE
VCC − VBE = I B RB + I B (RC + RE )
VCC − VBE = I B RB +  (RC + RE )
VCC − VBE
IB =
RB +  (RC + RE )

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Voltage (Potential) divider bias:

Exact Method: Approximate Method:

Determining the ETH by replacing back the Applicable only when: βRE ≥ 10R2
voltage sources the Thevenin voltage cct. is
R 2VCC
as shown. Then apply the voltage-divider VB = VR 2 =
rule. R1 + R 2

VRE = VB − VBE

VE
IE =
RE
IC  I E

R 2VCC
ETH = VR 2 =
R1 + R 2

ETH = VRTH + VBE + VRE


ETH = I B RTH + VBE + I E RE
ETH − VBE = I B RTH + I E RE
ETH − VBE = I B RTH + I B ( + 1) RE
ETH − VBE
IB =
RTH + (  + 1) RE

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Transistor Saturation in Amplifiers:

• Saturation means the levels of a system have reached their maximum values.

• For a transistor operating in the saturation region, the current is maximum value for a
particular design.

• Saturation region is normally avoided because the B-C junction is no longer reverse-biased
and the o/p amplified signal will be distorted.

• Make VCE = 0 and calculate IC using the output equation for the different circuits:

• Fixed Bias: the output equation is VCE =VCC-ICRC

• making VCE = 0 results in IC(SAT) = VCC/RC

• For the rest of the circuits the output equation is the same: VCE =VCC-IC(RC + RE)

• making VCE = 0 results in IC(SAT) = VCC/(RC +RE)

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Load-Line Analysis:

By refering to the output equation, a straight line can be drawn on the output characteristics. This
line is called-load line.

- This line connects the Q-point for each separate input current.

- At any point along the load-line, values of IB, IC and VCE can be picked off the graph.

• The process of plotting the load line is as follows:

Step 1:

Refer to the fixed-bias circuit; on o/p loop: VCE = VCC – ICRC …………………………(1)

Choose IC = 0 mA. Subtitute into eq (1), we get

VCE = VCC ……………………………………………………………………………..(2)

Step 2: Choose VCE = 0 V and subtitute into (1), we get

IC = VCC/RC ……………………………………………………………..(3)

Step 3: Joining the two points defined by (2) + (3), we get a straight line that can be drawn as below:

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For the rest of the circuits the output equation is: VCE =VCC-IC(RC + RE)…………………………(1)

Choose IC = 0 mA. Subtitute into eq (1), we get

VCE = VCC ……………………………………………………………………………..(2)

Step 2: Choose VCE = 0 V and subtitute into (1), we get

IC = VCC/(RC +RE)……………………………………………………………..(3)

Step 3: Joining the two points defined by (2) + (3), we get a straight line that can be drawn as below:

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Transistor Switching Networks:

Transistors with only the DC source applied can be used as electronic switches

Example: For the following switching circuit determine the values standard E12 of RC and RB

The transistor will switch between saturation and cut-off region.

VCC
The collector current under saturation (i.e. make VCE = 0): I Csat =
RC

I Csat
The base current that will ensure saturation: IB =
 dc

Use the minimum hFE or β value from the datasheet:  DC(min)

Design Operations:

● The design process is one where a current and/or voltage may be specified and the
requirement is to establish the designated levels.

● Requires clear understanding of:

- Device characteristics

- Basic network equations

- Basic laws of circuit analysis

e.g. (Ohm’s & KVL etc)

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Example: Given the device Characteristics for the figure below, determine VCC, RB and RC for the
corresponding fixed bias network:

Solution

From the load line:

VCC = 20V
VCC
IC =
RC
VCC 20V
RC = = = 2.5k
IC 8mA
VCC − VBE 20V − 0.7V
IB = = = 482.5k
IB 40A
Using standard E12 resistor values of

RC = 2.7 kΩ ; RB = 470 kΩ result in IB = 41.1 µA

Potential Divider Design:

● The following are important design rules:

VE = 10% VCC

IC≈IE

βRE = 10R2
VCC * R2
VR 2 =
R1 + R2
Chapter 4 Problems Exercises:

a) From the Prescribed Textbook attempt Q1; Q8; Q10; Q18; Q21 using both the EXACT and
APPROXIMATE METHOD (Show how Test whether this method can be used).; Q24; Q27;
Q29; Q32.
b) Design a potential divider bias network using the following parameters:

● ICQ = 5 mA; VCEQ = 6 V; β =200; VCC = 12 V. (i.e Determine R1; R2; RC; RE and use E12 values)

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