SEMICONDUCTOR DEVICES

1.

2. When an intrinsic semiconductor is doped with a small amount of trivalent impurity, then :
(a) its resistance increases. (b) it becomes a p-type semiconductor. (c) there will be more free
electrons than holes in the semiconductor. (d) dopant atoms become donor atoms.
3. In the energy-band diagram of n-type Si, the gap between the bottom of the conduction
band EC and the donor energy level ED is of the order of :
(a) 10 eV (b) 1 eV (c) 0 1 eV (d) 0 01 eV
4. (a) Differentiate between intrinsic and extrinsic semiconductors.
OR
(b) Draw the circuit arrangement for studying the V I characteristics of a p-n junction diode in
forward bias and reverse bias. Show the plot of V I characteristic of a silicon diode.
5. Briefly explain how the diffusion and drift currents contribute to the formation of potential
barrier in a p-n junction diode.
6.

7.
8.

9.

10.

11. If a p-n junction diode is reverse biased,

(a) the potential barrier is lowered. (b) the potential barrier remains unaffected. (c) the
potential barrier is raised.
(d) the current is mainly due to majority carriers.
12. Explain the roles of diffusion current and drift current in the formation of the depletion layer
in a p-n junction diode.
13. Explain the property of a p-n junction which makes it suitable for rectifying alternating
voltages. Differentiate between a half-wave and a full-wave rectifier.
14. At 0 K, the resistivity of an intrinsic semiconductor is :
(a) same as that at 0 C (b) same as that at 300 K (c) zero (d) infinite
15. How is the width of depletion layer of a p-n junction diode affected when it is (i) forward
biased, and (ii) reverse biased ? Justify your answers.
16. For the forward biasing of a p-n junction diode, which of the following statements is not
correct ?
(a) The potential barrier decreases. (b) Minority carrier injection occurs. (c) Width of
depletion layer increases.
(d) Forward current is due to the diffusion of both holes and electrons.
17. Draw a circuit diagram of a p-n junction diode in (a) forward biasing, and (b) reverse biasing.
Draw the V I characteristics for each case.
18.

19.

20. (i) A germanium crystal is doped with antimony. With the help of energy-band diagram,
explain how the conductivity of the doped crystal is affected.
(ii) Briefly explain the two processes involved in the formation of a p-n junction.
(iii) What will the effect of (1) forward biasing, and (2) reverse biasing be on the width of
depletion layer in a p-n junction
diode ?
21. (i) With the help of a circuit diagram, briefly explain the working of a full-wave rectifier
using p-n junction diodes.
(ii) Draw V I characteristics of a p-n junction diode. Explain how these characteristics make a
diode suitable for
rectification.
(iii) Carbon and silicon have the same lattice structure. Then why is carbon an insulator but
silicon a semiconductor ?
22.
23.

24.

25.

26.
27.

28. Assertion (A) : Silicon is preferred over Germanium for making semiconductor devices.
Reason (R) : Silicon can be used at a higher temperature as compared to Germanium.
29. Define the following terms in relation to the working of a p-n junction diode :
(i) Knee voltage (ii) Reverse saturation current
30. (a) How are the potential barrier and width of the depletion region affected when a p-n
junction diode is
(i) forward-biased, and (ii) reverse-biased ?
31.

32.

33. Explain the formation of depletion region in a p-n junction.

34. With the help of a circuit diagram, explain the working of a p-n junction diode as a full-wave
rectifier. Also draw its input and output waveforms.
35.

36.

37.

38.

39.

40.
41. Name the device which converts an ac input signal into a dc output signal. Write the
principle of working of the device.
42. Define barrier potential. Why does the thickness of the depletion layer in a p-n junction
diode vary with increase in reverse bias ?
43.

44.

45.

46.

47. (a) A p-type semiconductor is electrically neutral although it has holes as the majority
carriers. Justify.
48. Draw V I characteristics of a p-n junction diode. Answer the following giving reasons :
(a) Why is the reverse bias current almost independent of applied voltage up to breakdown
voltage ?
(b) Why does the reverse current show a sudden increase at breakdown voltage ?
49. (a) Explain the formation of a p-n junction.
(b) Can we take one slab of p-type semiconductor and physically join it to another n-type
semiconductor to get a p-n junction ? Explain.
50. Explain how the barrier potential is formed in a p-n junction. How is it affected in
(a) forward bias, and (b) reverse bias ?
51. C and Si both have the same lattice structure, but C is an insulator while Si is a
semiconductor. Justify.
52. Draw the energy band diagrams (at T > 0 K) for n-type and p-type semiconductors. Using
diagram, explain why in n-type semiconductor the conduction band has most electrons from the
donor impurities.
53. How is the forward biasing different from the reverse biasing in a p-n junction diode ? Name
one device each which works under forward and reverse biasing.
54. How are (a) n-type semiconductor, and (b) p-type semiconductor obtained from an intrinsic
semiconductor ?
Name the majority charge carriers in each of the semiconductors.
55.

56.

57.

58.

59. How does an increase in doping concentration affect the width of depletion layer of a p-n
junction diode ?
60. Explain the terms ‘depletion layer’ and ‘potential barrier’ in a p-n junction diode. How are
the (a) width of depletion layer, and (b) value of potential barrier affected when the p-n junction
is forward biased ?
61. Draw the circuit diagram of a full wave rectifier using two p-n junction diodes. Explain its
working and show input and output voltage variations.
62. At equilibrium, in a p-n junction diode the net current is
(A) due to diffusion of majority charge carriers. (B) due to drift of minority charge carriers.
(C) zero as diffusion and drift currents are equal and opposite. (D) zero as no charge carriers
cross the junction.
63. In an n-type semiconductor, the donor energy level lies
(A) at the centre of the energy gap. (B) just below the conduction band.
(C) just above the valance band. (D) in the conduction band.
64. Draw V-I characteristics of a p-n junction diode. Explain, why the current under reverse bias
is almost independent of the applied voltage up to the critical voltage.
65. (a) Why is an intrinsic semiconductor deliberately converted into an extrinsic semiconductor
by adding impurity atoms ?
(b) Explain briefly the two processes that occur in p-n junction region to create a potential
barrier.
66. Can a slab of p-type semi-conductor be physically joined to another n-type semiconductor
slab to form p-n junction ? Justify your answer.
OR
In a p-n junction diode the forward bias resistance is low as compared to the reverse bias
resistance. Give reason.
67. Briefly explain how a potential barrier is set up across a p-n junction as a result of diffusion
and drift of the charge carriers.
68. (a) Explain the formation of energy bands in crystalline solids. (b) Draw the energy band
diagrams of (i) a metal and (ii) a semiconductor.
69. The ________ , a property of materials C, Si and Ge depends upon the energy gap between
their conduction and valence bands.
70. The ability of a junction diode to ________ an alternating voltage, is based on the fact that it
allows current to pass only when it is forward biased.
71. Ge is doped with As. Due to doping,
(A) the structure of Ge lattice is distorted. (B) the number of conduction electrons increases.
(C) the number of holes increases. (D) the number of conduction electrons decreases.
72. Junction Diode as a Rectifier :
The process of conversion of an ac voltage into a dc voltage is called rectification and the device
which performs this conversion is called a rectifier. The characteristics of a p-n junction diode
reveal that when a p-n junction diode is forward biased, it offers a low resistance and when it
is reverse biased, it offers a high resistance. Hence, a p-n junction diode conducts only when it is
forward biased. This property of a p-n junction diode makes it suitable for its use as a rectifier.
Thus, when an ac voltage is applied across a p-n junction, it conducts only during those alternate
half cycles for which it is forward biased. A rectifier which rectifies only half cycle of an ac
voltage is called a half-wave rectifier and one that rectifies both the half cycles is known as
a full-wave rectifier.

(ii) In a full-wave rectifier, the current in each of the diodes flows for :
(A) Complete cycle of the input signal (B) Half cycle of the input signal
(C) Less than half cycle of the input signal (D) Only for the positive half cycle of the input signal
(iii) In a full-wave rectifier :
(A) Both diodes are forward biased at the same time. (B) Both diodes are reverse biased at the
same time.
(C) One is forward biased and the other is reverse biased at the same time.
(D) Both are forward biased in the first half of the cycle and reverse biased in the second half of
the cycle.
(iv) (a) An alternating voltage of frequency of 50 Hz is applied to a half-wave rectifier. Then the
ripple frequency of the output will be :
(A) 100 Hz (B) 50 Hz (C) 25 Hz (D) 150 Hz
OR
(b) A signal, as shown in the figure, is applied to a p-n junction diode. Identify the output across
resistance RL :
73. How does the conductivity of an intrinsic semiconductor vary with temperature ? Explain.
Show the variation in a plot.
74.

75. An n-type semiconducting Si is obtained by doping intrinsic Si with :

(A) Al (B) B (C) P (D) In
76. When a p-n junction diode is subjected to reverse biasing :
(A) the barrier height decreases and the depletion region widens.
(B) the barrier height increases and the depletion region widens.
(C) the barrier height decreases and the depletion region shrinks.
(D) the barrier height increases and the depletion region shrinks.
77. How does the energy gap of an intrinsic semiconductor effectively change when doped with
a (a) trivalent impurity, and (b) pentavalent impurity ? Justify your answer in each case.
78. With the help of a circuit diagram, explain the working of a p-n junction diode as a full wave
rectifier. Draw its input and output waveforms.
79. Si is doped with a pentavalent element. The energy required to set the additional electron
free is about :
(A) 0·01 eV (B) 0·05 eV (C) 0·72 eV (D) 1·1 eV
80. Assertion (A) : In a semiconductor, the electrons in the conduction band have lesser energy
than those in the valence band.
Reason (R) : Donor energy level is just above the valence band in a semiconductor.
81.

82. (a) Draw the circuit diagrams for obtaining the V I characteristics of a p-n junction diode.
Explain briefly the salient features of the V I characteristics in (i) forward biasing, and (ii) reverse
biasing.
OR
(b) On the basis of energy band diagrams, distinguish between (i) an insulator, (ii) a
semiconductor, and (iii) a conductor.
83.
84.

85.
86.

87.

88.

89. The effect on width of depletion layer and height of the potential barrier of a p-n junction,
when it is forward biased, are respectively :
(A) decreases, decreases (B) increases, increases (C) decreases, increases
(D) increases, decreases
90. The doping of a semiconductor with donor impurity results in :
(A) formation of a p-type semiconductor
(B) formation of a new energy level just above the filled valence band
(C) decrease in the concentration of electrons
(D) formation of a new energy level just below the conduction band
91. What are the important considerations for choosing dopants for silicon or germanium ?
Justify your answer.
92. Explain the formation of energy bands in solids and hence define conduction band and
valence band.
93. Which of the following statements is not true for a p-n junction diode under reverse bias ?
(A) The current is almost independent of the applied voltage.
(B) Holes flow from p-side to n-side. (C) Electric field in the depletion region increases.
(D) n-side of the junction is connected to +ve terminal and p-side to –ve terminal of the battery.
94. Two halves of a silicon crystal (A and B) are doped with arsenic and boron respectively,
forming a p-n junction in it. A battery is connected across it as shown in the figure.
(a) Will the junction be forward biased or reverse biased ? Give reason.
(b) Draw V-I graph for this arrangement.
95. The process of converting ac into dc is called rectification and the device used is called a
rectifier. When ac signal is fed to a junction diode during positive half cycle, the diode is forward
biased and current flows through it. During the negative half cycle, the diode is reverse biased
and it does not conduct. Thus the ac signal is rectified. The p-n junction diodes can be used as
half-wave and full-wave rectifiers.
(i) Which bulb/bulbs will glow in the given circuit ?

(A) B1 only (B) B2 only (C) Both B1 and B2 (D) Neither B1 nor B2
(ii) (a) A full-wave rectifier circuit is shown in the figure. The contribution in output waveform
from junction diode D1 is :

(A) A, D (B) A, C (C) B, D (D) B, C

OR
(b) The output in a half-wave rectifier is :
(A) unidirectional without ripple (B) steady and continuous
(C) unidirectional with ripple (D) steady but discontinuous
(iii) In a p-n junction diode, the majority charge carriers on p-side and on n-side are, respectively
(A) electrons, electrons (B) electrons, holes (C) holes, holes (D) holes, electrons
(iv) If the frequency of the half-wave rectifier is 50 Hz, the frequency of full-wave rectifier is :
(A) 25 Hz (B) 50 Hz (C) 100 Hz (D) 200 Hz
96. Name the impurity atoms which are doped in an intrinsic semiconductor to convert it into
(a) p-type, and (b) n-type semiconductor. Draw energy band diagrams of p-type and n-type
semiconductors at temperature T > 0 K. Mark the donor and acceptor energy levels, showing
the energy difference from the respective bands.
97. When intrinsic silicon semiconductor is doped with Al atom, then it :
(A) decreases the number of holes in the conduction band.
(B) increases the number of holes in the valence band.
(C) increases the energy gap value. (D) increases the number of electrons in the valence band.
98. Explain the terms depletion layer and potential barrier for a junction diode and their
formation.
99. The majority and the minority charge carriers inside a p-type semiconductor are respectively
(A) electrons, holes (B) holes, electrons (C) holes, holes (D) electrons, electrons
100. The output of a full-wave rectifier is :
(A) steady (B) continuous with ripple (C) continuous without any ripple (D) zero during
alternate half cycles of input
101. Explain the formation of potential barrier across an unbiased p-n junction. Write the effect
on height of the barrier when a p-n junction is (a) forward biased, and (b) reverse biased.
102. (a) Explain the formation of valence and conduction band in a crystal.
(b) Discuss the difference between energy bands of (i) a metal, (ii) an insulator, and (iii) a
semiconductor.