Case Study Based

Questions
Case Study1
Consider athinp-type silicon (p-Si)semiconductor
wafer. By adding precisely
a small quantity of Si
pentavalent
of
impurity,
the p-Si wafer can be
part
converted into n-Si. There Si Si Si
are several processes by
which a semiconductor Si Si
can be formed. The wafer
now contains p-region and n-region and a
metallurgical junction between p and n-regions.
Two important processes occur during the
formation of a p-n junction: diffusion and drift.
We knovw that in an n-type semiconductor, the
concentration of electrons is more compared to
the concentration of holes. Similarly, in a p-type
semiconductor, the concentration of holes is
more than the concentration of electrons. During
the formation of p-n junction and due to the
concentration gradient across p and n-sides,
holes difuse from p-side to n-side (p ’ n)
and electrons diffuse from n-side to p-side gives
(n’p). This motion of charge carriersjunction.
rise to diffusion current across the
 Physics | Class 12| 257
Read the given passage carefully and give the
answer of the following questions:
Q. How can a p-type semiconductor be converted into
n-type semiconductor?
a. By adding pentavalent impurity
b. By adding trivalent impurity
C. By not possible
d. By heavydoping
Q2. Which of the following is true about n-type
semiconductor?
a. Concentration of electrons is less than that of
holes.
b. Concentration of electrons is more than that of
holes.
Concentration of electrons is equal to that of
holes.
d. None of the above
Q3. Which of the following is true about p-type
semiconductor?
a. Concentration of electrons is less than that of holes.
b. Concentration of electrons is more than that of
holes.
C. Concentration of electrons is equal to that of holes.
d. None of the above
Q4. Which of the following is the reason about
diffusion current?
a. Diffusion of holes from p ton
b. Diffusion of electrons from n to p
C. Both a. and b.
d. None of the above
Case Study 2
Asemiconductor diode is basically a pr-junction
with metallic contacts provided at the ends for
the application of an external voltage. It is a twO
terminal device. When an external voltage is
applied across a semiconductor diode such that
p-side is connected to the positive terminal of the
battery and n-side to the negative terminal, it is said
tobe forward biased. When an external voltage is
applied across the diode such that n-side is positive
and p-side is negative, it is said to be reverse
biased. An ideal diode is one whose resistance
in forward biasing is zero and the resistance is
infinite in reverse biasing. When the diode is
forward biased, it is found that beyond forward
voltage called knee voltage, the conductivity is
very high. When the biasing voltage is more than
the knee voltage, the potential barrier is overcome
and the current increases rapidly with increase
in forward voltage. When the diode is reverse
biased, the reverse bias voltage produces a very
small current about afew microamperes which
almost remains constant with bias. This small
current is reverse saturation current.
 Read the given passage carefully and give the
answer of the following questions:
o1. In the given figure, a diode D is connected to an
external resistance R= 100 2 and an emf of 3.5 V.
If the barrier potential developed across the diode
is 0.5 V, the current in the circuit will be:
D 1002

3.5 V
a. 40 mA b. 20 mA
c. 35 mA d. 30 mA
Q2. In which of the following figures, the pn diode is
reverse biased?
-12V
b. -12 V

-5 V -10 V

p+5 V -10 V

C.

+5 V R

03. Based on the V-l characteristics of the diode, we

can classify diode as:
a. bilateral deviceb. ohmic device
C. non-ohmic device d. passive element
OR
Two identical pn-junctions can be connected in
series by three different methods as shown in the
figure. If the potential difference in the junctions is Ca
the same, then the correct connections will be

1 2
a. in the circuits (1) and (2)
b. in the circuits (2) and (3)
c. in the circuits (1) and (3)
d. only in the circuit (1)
Q4. I(in mA)

30+

20
15
silicon
10
-10 V
0.5!
0.70.8 V (in volts)
1(in mA)
The V-I characteristic of a diode is
figure. The ratio of the resistance ofshown
the
in the
diode at
l=15 mA to the resistance at V=-10 Vis:
a. 100 (CBSE SQP 2023-24)
b. 106
c. 10 d. 10-6
Case Study 3
A silicon p-n junction diode is connected to a
resistor R and a battery of voltage V% through
milliampere (mA) as shown in figure. The knee
voltage for this junctiondiode is Vy=0.7 V. The
p-n junction diode requires a minimum current
of 1mA to attain a value higher than the knee
point on the V-I characteristics of this junction
diode. Assuming that the voltage V across the
junction is independent of the current above the
knee point.
Ap-n junction is the basic building block of many
semiconductor, devices like diodes. Important
process occurring during the formation of a p-n
junction are diffusion and drift. In an n-type
semiconductor concentration ofelectrons is more
as compared to holes. In ap-type semiconductor,
concentration of holes is more as compared to
electrons.
p-n junction diode
W
+

R (mA

VB
 Read the given passage carefully and give the
answer of the following questions:
QL. If Vg = 5 V, then what will be the maximum value
of R so that the voltage Vis above the knee point
voltage?
Q2. If Ve=5 V, thenwhat will be the value of Rin order
to establish a current to 6 mA in the circuit?
93. When the diode is reverse biased with a voltage of
6V and Vhi=0.63V, calculate the total potential.
Q4. If Va =6 V, then calculate the power dissipated in
the resistor R, when acurrent of 6 mA flows in the
circuit.
Case Rectifier
Study 4is a device which is used for converting
alternating current or voltage into direct current
or voltage. Its working is based on the fact that
the resistance of p-n junction becomes low when
forward biased and becomes high when reverse
biased. A half wave rectifier uses only a single
diode while a full waye rectifier uses two diodes
as shown in figures (a) and (b).
Input
voltage
R Output voltage
Vo

(a) Half wave rectifier

Input Output voltage V,

voltage
R.

(b) Fullwave rectifier

Read the given passage carefully and give the
answer of the following questions:
Q1. If the rmsvalue of sinusoidal input to a full wave

rectifier is Vo
V2
then what is the rms value of the
rectifier's output?
 Physics Class 12| 259
Q2. When an input of frequency 200 Hz is fed at
what will be the ratio of output input,
frequencies of half
wave rectifier and full wave rectifier?
Q3. A p-n junction diode is shown in figure can act
as a rectifier. An alternating voltage source () is
connected in the circuit. Show the waveform of
current (0) in the resistor (R).

VO R

Q4. What will be the fundamental ripple frequency in

a half wave rectifier circuit operating from 50 Hz
mains frequency?
 Multiple Choice Questions b. Both Assertion (A) and Reason (R) are true but
0L In an extrinsic semiconductor, the number density Reason (R) is not the correct explanation of
of holes is 4 x 10 m. If the number density of Assertion (A).
c. Assertion (A) is true but Reason (R) isfalse.
intrinsic carriers is 1.2 x 10* m the number d. Both Assertion (A) and Reason (R) are false.
density of electrons in it is: (CBSE 2023) Q3. Assertion (A): Theelectrons in the conduction band
a. 1.8 x 10 m have higher energy than those in the valence band
b. 2.4 x 101 m3 of the semiconductor.
c. 3.6 x 10 m3 Reason (R): The conduction band is above the
d. 3.2 x 10 m3 energy gap and valence band lies below the energy
02. Pieces of copper and of silicon are initially at room gap.
temperature. Both are heated to temperature T. Q4. Assertion (A): An n-type semiconductor has a
The conductivity of: (CBSE 2023) large number of electrons but still it is electrically
neutral.
a. both increases
b. both decreases
Reason (R): An n-type semiconductor is obtained
by doping an intrinsic semiconductor with a
C. Copper increases and silicon decreases pentavalent impurity.
d. copper decreases and silicon increases
Fill in the blanks
Assertion and Reason Type Questions Q5. In n-type semiconductor, are majority
Directions (Q.Nos. 3-4): In the following questions, carriers.
statement of Assertion (A) is followed by astatement of Q6. A semiconductor has equal electron and hole
Reason (R). Mark the correct choice aS: concentration of 6 x 10° per m°. On doping with
a. Both Assertion (A) and Reason (R) are true certain impurity, electron concentration increases
and Reason (R) is the correct explanation of to9 x 10o per m. The new hole concentration is
Assertion (A).
 Case Study Based Question o1. Draw energy band diagrams of n-type and p-type
Q7. From Bohr's atomic model, we know semiconductors at temperature T>0 K. Mark
that the the donor and acceptor energy levels with their
electrons have well defined energy levels in an
isolated atom. But due to Interatomic interactions energies.
in a crystal, the electrons of the outer shells 012, C, Si and Ge have same lattice structure.
are
forced to have energies different from those in Why is Cinsulator, while Si and Ge intrinsic
isolated atoms. Each energy level splits into a semiconductors?
number of energy levels forming a continuous Short Answer Type-ll Questions
band. The gap between top of valence band
and bottom of the conduction band in which no 013. Draw a circuit diagram of a
full-wave rectiñer.
allowed energy levels for electrons can exist is Explain its working principle. Draw the input/
called energy gap. output waveforms indicating clearly the functions
of the two diodes used.
Empty=
conduction= Q14. Assuming that the two diodes D, and D, used in
band=
the electric circuit shown in the figure are ideal.
Find out the value of the current flowing through
2.5 Q resistor.
D2 32
Filled
valence
band
D, 32
Read the given passage carefully and give the
answer of the following questions: 2.592
(i) What isthe energy band gap in an insulator?
10V
(ii) What is the separation between conduction and Q
15. Draw -V characteristics of a p-n
valence band in a semiconductor? junction diode.
Answer the following questions, giving reasons:
(ii) Based on the band theory of conductors, (Ö) Why is the current under reverse bias
semiconductors and insulators, in which of the almost
independent of the applied potential upto a
following the forbidden gap is smallest? critical voltage?
(iv) Drawthe energy band diagram of conductors.Rr 0) Why does the reverse current show asudden
Very Short Answer Type Questions increase at the critical voltage?
Name any semiconductor device which operates
Q8. What are the two types of semiconductors on the under the reverse bias in the breakdown region.
basis of purity? Long Answer Type Questions
Q9. In full wave rectification, what is the output frequency Q16. Write the two
processes that take place in the
if input frequency is 50 Hz? formation of a p-n junction. Explain with the help
Short Answer Type-l Questions of a diagram, the formation of depletion region and
barrier potential in a p-n junction.
Q10. Answer the following giving reasons: Q17. Draw the necessary energy band diagrams to
() A p-n junction diode is damaged by a strong distinguish between conductors, semiconductors
current. and insulators. How does the changes in
(ii) Impurities are added in intrinsic semiconductors. temperature affect the behaviour of these
(CBSE 2023) naterials? Explain briefly.